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31.
公开(公告)号:US08994052B2
公开(公告)日:2015-03-31
申请号:US13161835
申请日:2011-06-16
申请人: Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人: Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
摘要: A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.
摘要翻译: 发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘,其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙,其中所述第二半导体层中的所述第一区域外部的区域为空 并且第一区域的面积比顶视图中的第一区域的面积小,并且第一衬垫的面积在俯视图中小于第二半导体层的面积,并且从有源层发射的光为 从与第一半导体层相对的第二半导体层的顶表面提取。
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公开(公告)号:US20130049051A1
公开(公告)日:2013-02-28
申请号:US13596528
申请日:2012-08-28
申请人: Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yl-Wen Ku , Hung-Che Chen , Chih-Nan Lin
发明人: Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yl-Wen Ku , Hung-Che Chen , Chih-Nan Lin
IPC分类号: H01L33/60
CPC分类号: H01L33/405 , H01L33/385 , H01L33/42 , H01L33/44
摘要: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.
摘要翻译: 公开了一种发光器件,包括:半导体叠层层; 半导体堆叠层上的反射层; 第一缓冲层,包括在反射层上包含金属元素和非金属元素的化合物; 第一电极; 以及设置在第一缓冲层和第一电极之间的电绝缘层。
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公开(公告)号:US20120080697A1
公开(公告)日:2012-04-05
申请号:US13175698
申请日:2011-07-01
申请人: Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人: Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
CPC分类号: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译: 发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。
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公开(公告)号:US5579962A
公开(公告)日:1996-12-03
申请号:US534617
申请日:1995-09-27
申请人: Chao-Hsing Chen
发明人: Chao-Hsing Chen
CPC分类号: B65D23/00
摘要: An improved decanter structure, which comprises a neck passage, an inner chamber and a partition plate; both sides of the partition plate are thicker than the rest part of the decanter; two symmetrical shoulder passages extend from both sides of the neck passage; the shoulder passages can limit the flow of a liquor upon decanting the liquor, i.e., to provide a buffer effect for controlling the decanting.
摘要翻译: 一种改进的滗析器结构,其包括颈部通道,内室和隔板; 隔板的两侧比滗水器的其余部分厚; 两个对称的肩部通道从颈部通道的两侧延伸; 在倾析液体时,肩部通道可以限制液体的流动,即提供用于控制倾析的缓冲效果。
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公开(公告)号:US09159881B2
公开(公告)日:2015-10-13
申请号:US13596528
申请日:2012-08-28
申请人: Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yi-Wen Ku , Hung-Che Chen , Chih-Nan Lin
发明人: Jia-Kuen Wang , Chien-Fu Shen , Chao-Hsing Chen , Yu-Chen Yang , Hui-Chun Yeh , Yi-Wen Ku , Hung-Che Chen , Chih-Nan Lin
CPC分类号: H01L33/405 , H01L33/385 , H01L33/42 , H01L33/44
摘要: Disclosed is a light-emitting device comprising: a semiconductor stack layer; a reflective layer on the semiconductor stack layer; a first buffer layer comprising a compound comprising a metallic element and a non-metallic element on the reflective layer; a first electrode; and an electrical insulating layer disposed between the first buffer layer and the first electrode.
摘要翻译: 公开了一种发光器件,包括:半导体叠层层; 半导体堆叠层上的反射层; 第一缓冲层,包括在反射层上包含金属元素和非金属元素的化合物; 第一电极; 以及设置在第一缓冲层和第一电极之间的电绝缘层。
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公开(公告)号:US08598614B2
公开(公告)日:2013-12-03
申请号:US13221369
申请日:2011-08-30
申请人: Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
发明人: Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC分类号: H01L33/60
CPC分类号: H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要: A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.
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公开(公告)号:USD681566S1
公开(公告)日:2013-05-07
申请号:US29423273
申请日:2012-05-30
申请人: Chao-Hsing Chen , Hui-chun Yeh , Chien-Fu Shen
设计人: Chao-Hsing Chen , Hui-chun Yeh , Chien-Fu Shen
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公开(公告)号:US08294174B2
公开(公告)日:2012-10-23
申请号:US12870407
申请日:2010-08-27
申请人: Chao-Hsing Chen , Yu-Pin Hsu
发明人: Chao-Hsing Chen , Yu-Pin Hsu
IPC分类号: H01L33/00 , H01L29/417 , H01L29/86 , H01L29/861
CPC分类号: H01L27/156 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要: This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.
摘要翻译: 本公开公开了一种包括基板的发光装置; 以及多个整流单元,包括形成在所述基板上的第一整流单元和第二整流单元,用于接收和调节交流信号为直流信号。 每个整流单元包括接触层和肖特基金属层。 发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。
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公开(公告)号:US08110420B2
公开(公告)日:2012-02-07
申请号:US12961859
申请日:2010-12-07
申请人: Chao-Hsing Chen
发明人: Chao-Hsing Chen
IPC分类号: H01L21/00
CPC分类号: H01L25/0753 , H01L33/0079 , H01L33/44 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
摘要翻译: 一种制造发光二极管阵列的方法,包括:提供临时衬底; 在所述临时衬底上形成第一发光层和第二发光层; 形成覆盖所述第一发光叠层的部分的第一绝缘层; 在所述第一绝缘层上形成电线并电连接到所述第一发光堆叠和所述第二发光堆叠; 形成完全覆盖第一发光层的第二绝缘层,第二发光层的导线和部分; 在所述第二绝缘层上形成金属连接层,并电连接到所述第二发光堆叠; 在所述金属连接层上形成导电基板; 去除临时衬底; 以及形成连接到第一发光叠层的第一电极。
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公开(公告)号:US20110133219A1
公开(公告)日:2011-06-09
申请号:US12961859
申请日:2010-12-07
申请人: Chao-Hsing Chen
发明人: Chao-Hsing Chen
CPC分类号: H01L25/0753 , H01L33/0079 , H01L33/44 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要: A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
摘要翻译: 一种制造发光二极管阵列的方法,包括:提供临时衬底; 在所述临时衬底上形成第一发光层和第二发光层; 形成覆盖所述第一发光叠层的部分的第一绝缘层; 在所述第一绝缘层上形成电线并电连接到所述第一发光堆叠和所述第二发光堆叠; 形成完全覆盖第一发光层的第二绝缘层,第二发光层的导线和部分; 在所述第二绝缘层上形成金属连接层,并电连接到所述第二发光堆叠; 在所述金属连接层上形成导电基板; 去除临时衬底; 以及形成连接到第一发光叠层的第一电极。
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