公开(公告)号：US08294174B2

公开(公告)日：2012-10-23

申请号：US12870407

申请日：2010-08-27

申请人： Chao-Hsing Chen ,  Yu-Pin Hsu

发明人： Chao-Hsing Chen ,  Yu-Pin Hsu

IPC分类号： H01L33/00 ,  H01L29/417 ,  H01L29/86 ,  H01L29/861

CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

摘要翻译： 本公开公开了一种包括基板的发光装置; 以及多个整流单元，包括形成在所述基板上的第一整流单元和第二整流单元，用于接收和调节交流信号为直流信号。 每个整流单元包括接触层和肖特基金属层。 发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。

公开(公告)号：US20110062891A1

公开(公告)日：2011-03-17

申请号：US12870407

申请日：2010-08-27

申请人： Chao-Hsing CHEN ,  Yu-Pin Hsu

发明人： Chao-Hsing CHEN ,  Yu-Pin Hsu

IPC分类号： H05B41/36

CPC分类号： H01L27/156 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00

摘要： This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

摘要翻译： 本公开公开了一种包括基板的发光装置; 以及多个整流单元，包括形成在所述基板上的第一整流单元和第二整流单元，用于接收和调节交流信号为直流信号。 每个整流单元包括接触层和肖特基金属层。 发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。

公开(公告)号：US20090057696A1

公开(公告)日：2009-03-05

申请号：US12222814

申请日：2008-08-18

申请人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

发明人： Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Jui-Yi Chu ,  Tsung-Kuang Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/14

摘要： A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer, the n-type three-dimensional electron cloud structure, the second n-type semiconductor layer, the active layer and the p-type semiconductor layer are subsequently grown on the substrate.

摘要翻译： 提供了一种发光二极管器件（LED）器件及其制造方法，其中LED器件包括衬底，第一n型半导体层，n型三维电子云结构，第二n型半导体 层，有源层和p型半导体层。 随后，在基板上生长第一n型半导体层，n型三维电子云结构，第二n型半导体层，有源层和p型半导体层。

公开(公告)号：US20220257126A1

公开(公告)日：2022-08-18

申请号：US17622280

申请日：2020-06-26

申请人： Yu-Pin Hsu ,  Zemin Liu ,  Mona Mostafa Hella

发明人： Yu-Pin Hsu ,  Zemin Liu ,  Mona Mostafa Hella

IPC分类号： A61B5/021 ,  A61B5/00 ,  H03M1/10 ,  H03M1/46

摘要： One embodiment provides an offset calibration circuitry configured to compensate an offset voltage of a resistive bridge sensor. The offset calibration circuitry includes a first current digital to analog converter (IDAC) coupled to a first successive approximation register (SAR), a second IDAC coupled to a second SAR and an SAR controller circuitry. The first IDAC is configured to couple to a negative voltage port of a resistive bridge sensor. The first SAR is configured to store a circuitry first digital value. The second IDAC is configured to couple to a positive voltage port of the resistive bridge sensor. The second SAR is configured to store a second digital value. The SAR controller circuitry is configured to adjust each bit of the first SAR and each bit of the second SAR based, at least in part, on an output of a comparator. The comparator is configured to compare a voltage on the negative voltage port or a voltage on the positive voltage port to a common mode voltage.

公开(公告)号：US20090256159A1

公开(公告)日：2009-10-15

申请号：US12382955

申请日：2009-03-27

申请人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

发明人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

IPC分类号： H01L33/00 ,  H01L29/20

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

摘要翻译： 本发明公开了一种包括基板的GaN半导体器件; 在基板上形成富金属的氮化物化合物薄膜; 形成在富金属氮化物化合物薄膜上的缓冲层，以及缓冲层上的半导体堆叠层，其中金属主导的氮化物化合物薄膜覆盖基板的部分上表面。 因为富金属的氮化物是非晶体，所以缓冲层的外延生长方向在开始时向上生长然后横向变化，并且缓冲层的外延缺陷也随着缓冲层的外延生长方向而弯曲。 因此，延伸到半导体堆叠层的外延缺陷的概率降低，并且提高了GaN半导体器件的可靠性。

公开(公告)号：US20090189690A1

公开(公告)日：2009-07-30

申请号：US12185380

申请日：2008-08-04

申请人： Shey-Shi Lu ,  Yu-Pin Hsu ,  Yu-Tso Lin ,  Chun-Hao Chen

发明人： Shey-Shi Lu ,  Yu-Pin Hsu ,  Yu-Tso Lin ,  Chun-Hao Chen

IPC分类号： H03G3/20

CPC分类号： H03G3/001 ,  F41A33/06 ,  F41B11/64 ,  F41B11/642 ,  F41B11/646 ,  H03G3/30

摘要： The present invention is a feed-forward automatic-gain control amplifier (FFAGCA) for biomedical applications and associated method, the FFAGCA comprises a detector, a controller, a variable gain amplifier (VGA), an input and an output. The associated method to process various kinds of biomedical signals with the FFAGCA comprises acts of adjusting gain setting with control path and simultaneously a signal amplification with signal path.

摘要翻译： 本发明是用于生物医学应用和相关方法的前馈自动增益控制放大器（FFAGCA），FFAGCA包括检测器，控制器，可变增益放大器（VGA），输入和输出。 使用FFAGCA处理各种生物医学信号的相关方法包括利用控制路径调整增益设置的动作，并且同时使用信号路径进行信号放大。

公开(公告)号：US08487317B2

公开(公告)日：2013-07-16

申请号：US12382955

申请日：2009-03-27

申请人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

发明人： Yi-Chieh Lin ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chi-Ming Tsai

IPC分类号： H01L33/00 ,  H01L29/20

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/007

摘要： This invention discloses a GaN semiconductor device comprising a substrate; a metal-rich nitride compound thin film on the substrate; a buffer layer formed on the metal-rich nitride compound thin film, and a semiconductor stack layer on the buffer layer wherein the metal-dominated nitride compound thin film covers a partial upper surface of the substrate. Because metal-rich nitride compound is amorphous, the epitaxial growth direction of the buffer layer grows upwards in the beginning and then turns laterally, and the epitaxy defects of the buffer layer also bend with the epitaxial growth direction of the buffer layer. Therefore, the probability of the epitaxial defects extending to the semiconductor stack layer is reduced and the reliability of the GaN semiconductor device is improved.

公开(公告)号：US08729525B2

公开(公告)日：2014-05-20

申请号：US12547073

申请日：2009-08-25

申请人： Jui-Yi Chu ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

发明人： Jui-Yi Chu ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

IPC分类号： H01L29/06 ,  H01L33/06

CPC分类号： H01L33/06 ,  H01L33/325

摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

摘要翻译： 本申请涉及一种光电器件。 光电器件包括n包层，p包层和多量子阱结构。 多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。 阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。

公开(公告)号：US07755736B2

公开(公告)日：2010-07-13

申请号：US11982863

申请日：2007-11-05

申请人： Yu-Pin Hsu

发明人： Yu-Pin Hsu

IPC分类号： G02F1/1339

CPC分类号： G02F1/13392 ,  G02F2001/13398 ,  G02F2203/02

摘要： An exemplary liquid crystal display panel (20) includes a pair of substrates (210, 220) spaced from each other in a vertical direction, a liquid crystal layer (230) sandwiched between the substrates, a plurality of spacers (250) evenly distributed between the substrates to resist compression forces in the vertical direction, and a plurality of pixel regions. Each of the pixel regions defines a reflection region and a transmission region, and each of the spacers includes a reflective layer (252).

摘要翻译： 示例性液晶显示面板（20）包括在垂直方向上彼此间隔开的一对基板（210,220），夹在基板之间的液晶层（230），均匀地分布在基板 用于抵抗垂直方向上的压缩力的基板和多个像素区域。 每个像素区域限定反射区域和透射区域，并且每个间隔物包括反射层（252）。

公开(公告)号：US20100046205A1

公开(公告)日：2010-02-25

申请号：US12547073

申请日：2009-08-25

申请人： Jui-Yi CHU ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

发明人： Jui-Yi CHU ,  Cheng-Ta Kuo ,  Yu-Pin Hsu ,  Chun-Kai Wang ,  Hsin-Hsien Wu ,  Yi-Chieh Lin

IPC分类号： G02F1/13357 ,  H01L29/15

CPC分类号： H01L33/06 ,  H01L33/325

摘要： The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

摘要翻译： 本申请涉及一种光电器件。 光电器件包括n包层，p包层和多量子阱结构。 多量子阱结构位于p包覆层和n包层之间，并且包括多个势垒层，多个阱层和势垒调整层。 阻挡层调整层是通过将与p型包层相邻的势垒层与其中的杂质掺杂以改变其能量势垒而制成的，以提高光电器件的光提取效率。