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公开(公告)号：US20120122313A1
公开(公告)日：2012-05-17
申请号：US13293878
申请日：2011-11-10
IPC分类号： H01L21/3205
CPC分类号： H01L21/28562 , C23C16/18 , C23C16/45536 , C23C16/45553 , H01L21/76871
摘要： Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.
摘要翻译： 在基材上形成含金属薄膜的组合物和方法。 提供反应器和反应器中的至少一个基板。 将含金属的双 - 二氮嗪酮前体引入反应器。 将反应器保持在设定的温度和压力下，并将前体与基底接触以在基底上形成含金属的膜。
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32.发明申请PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF 有权包含化合物的PENTAKIS（DIMETHYLAMINO）二恶英前体及其制备方法公开(公告)号：US20100016620A1
公开(公告)日：2010-01-21
申请号：US12295902
申请日：2006-04-03
申请人： Christian Dussarrat
发明人： Christian Dussarrat
IPC分类号： C07F7/10
摘要： Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.
摘要翻译： 具有通式（1）的Pentakis（二甲基氨基）乙硅烷：Si2（NMe2）5Y，其中Y选自H，Cl或氨基，其制备方法及其制备栅极介电膜或蚀刻停止介电膜的用途 的SiN或SiON。
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33.发明申请Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films 有权含镧系元素前体的制备和含镧系元素膜的沉积公开(公告)号：US20090302434A1
公开(公告)日：2009-12-10
申请号：US12479175
申请日：2009-06-05
IPC分类号： H01L29/51 , C07F19/00 , H01L21/285
CPC分类号： H01L21/02192 , C07C257/14 , C07F17/00 , C23C16/18 , C23C16/409 , C23C16/45531
摘要： Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
摘要翻译： 本文描述了用于沉积含稀土金属的层的方法和组合物。 通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。 所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。
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34.发明申请NEUTRAL LIGAND CONTAINING PRECURSORS AND METHODS FOR DEPOSITION OF A METAL CONTAINING FILM 有权含有前驱体的中性配体和含金属膜的沉积方法公开(公告)号：US20090104375A1
公开(公告)日：2009-04-23
申请号：US12212500
申请日：2008-09-17
IPC分类号： C23C16/513 , C23C16/18 , C07F7/02
CPC分类号： C23C16/45553 , C07F7/0803 , C23C16/18
摘要： Methods and compositions for depositing metal films are described herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver or copper. More specifically, the disclosed precursor compounds utilize neutral ligands derived from ethylene or acetylene.
摘要翻译： 本文描述了用于沉积金属膜的方法和组合物。 通常，所公开的方法利用包含金，银或铜的前体化合物。 更具体地，所公开的前体化合物利用衍生自乙烯或乙炔的中性配体。
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35.发明申请RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS 审中-公开具有两个不同的配置的RINHENIUM前置器在半导体应用中使用公开(公告)号：US20090028745A1
公开(公告)日：2009-01-29
申请号：US12179239
申请日：2008-07-24
CPC分类号： C23C16/18 , C23C16/406 , C23C16/45553
摘要： Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands.
摘要翻译： 在具有含有氮和两种不同配体的钌前体的基板上形成含钌膜的方法。
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公开(公告)号：US07482286B2
公开(公告)日：2009-01-27
申请号：US10591629
申请日：2005-02-24
申请人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
发明人： Ashutosh Misra , Matthew Fisher , Benjamin Jurcik , Christian Dussarrat , Eri Tsukada , Jean-Marc Girard
IPC分类号： H01L21/469 , H01L21/8242 , H01L21/31 , H01L21/38 , H01L21/22 , H01L21/4763
CPC分类号： C23C16/308 , C23C16/34 , C23C16/401 , C23C16/4481 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/02181 , H01L21/02189 , H01L21/02271 , H01L21/28556 , H01L21/3143 , H01L21/3144 , H01L21/3145 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/76841 , Y10S438/907
摘要： Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.
摘要翻译： 通过引入无碳硅源（例如，（SiH 3）3 N），具有通式MXn的金属前体（例如，Hf（NEt 2）4））和氧化 试剂（例如，O 2）进入CVD室，并在基板的表面进行反应。 可以获得MsiN，MSI和/或MSION膜。 这些膜可用作高k电介质膜。
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公开(公告)号：US20080121249A1
公开(公告)日：2008-05-29
申请号：US10583641
申请日：2004-12-10
IPC分类号： B08B5/00
CPC分类号： B08B7/00 , C23C14/564 , C23C16/4405 , C23C16/4412
摘要： To provide an efficient method for cleaning film-forming apparatuses in order to remove a ruthenium-type deposit residing on a constituent member of a film-forming apparatus after said apparatus has been used to form a film comprising ruthenium or solid ruthenium oxide, wherein at least the surface region of the ruthenium-type deposit comprises solid ruthenium oxide.A ruthenium-type deposit, at least the surface region of which is solid ruthenium oxide, is brought into contact with reducing gas that contains a reducing species comprising hydrogen or hydrogen radical and the solid ruthenium oxide is thereby converted into ruthenium metal. This ruthenium metal is subsequently converted into volatile ruthenium oxide by bringing the ruthenium metal into contact with an oxidizing gas that contains an oxidizing species comprising an oxygenated compound, and this volatile ruthenium oxide is removed from the film-forming apparatus.
摘要翻译： 为了提供一种清洁成膜装置的有效方法，以便在所述装置用于形成包含钌或固体氧化钌的膜之后，去除位于成膜装置的构成部件上的钌型沉积物，其中在 钌型沉积物的表面区域最少包含固体氧化钌。 至少其表面区域为固体氧化钌的钌型沉积物与含有包含氢或氢原子的还原物质的还原气体接触，由此将固体氧化钌转化为金属钌。 通过使钌金属与包含含氧化合物的氧化物质的氧化气体接触，随后将该钌金属转化为挥发性氧化钌，并且从成膜设备中除去该挥发性氧化钌。
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38.发明授权Method for producing silicon nitride films and process for fabricating semiconductor devices using said method 失效用于制造氮化硅膜的方法和使用所述方法制造半导体器件的工艺公开(公告)号：US07351670B2
公开(公告)日：2008-04-01
申请号：US11020712
申请日：2004-12-23
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , H01L21/3185
摘要： Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).
摘要翻译： 在LPCVD工具中，在安装在船上的硅晶片上形成硅氮化物膜，该硅源通过馈送硅源（SiH 2 2 Cl 2 Si 2 Si 3 S 2， >，Si 2 C 6 C 6等），并将一甲胺（CH 3 N 2 NH 2）的混合气体进料， / NH 3）和氨（NH 3 N 3）作为来自注射器的氮源。 通过将这种单甲胺添加到用于薄膜生产的源物质中，即使在低温（450-600℃）下也可以提供改进的膜质量和改善的泄漏特性。
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39.发明授权Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof 有权六烷基（单烃基氨基）二硅烷及其制备方法公开(公告)号：US07064083B2
公开(公告)日：2006-06-20
申请号：US11222361
申请日：2005-09-08
IPC分类号： H01L21/31
CPC分类号： C07F7/10
摘要： A composition and method of preparation, to provide silane compounds that are free of chlorine. The compounds are hexakis(monohydrocarbylamino)disilanes with general formula (I) ((R)HN)3—Si—Si—(NH(R))3 (I) wherein each R independently represents a C1 to C4 hydrocarbyl. These disilanes may be synthesized by reacting hexachlorodisilane in organic solvent with at least 6-fold moles of the monohydrocarbylamine RNH2 (wherein R is a C1 to C4 hydrocarbyl). Such compounds have excellent film-forming characteristics at low temperatures. These films, particularly in the case of silicon nitride and silicon oxynitride, also have excellent handling characteristics.
摘要翻译： 提供不含氯的硅烷化合物的组合物和制备方法。 化合物是具有通式（I）的六（单烃基氨基）二硅烷，其中式（I）<βin-line-formula description =“In-line Formulas”end =“lead”→（（R）HN） -Si-Si-（NH（R））3（I）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中每个R独立地表示 C 1至C 4烃基。 这些二硅烷可以通过使六氯二硅烷在有机溶剂中与至少6倍摩尔的单烃基胺R N H 2（其中R是C 1至C 4）的反应来合成 烃基）。 这些化合物在低温下具有优异的成膜特性。 这些膜，特别是在氮化硅和氮氧化硅的情况下，也具有优异的处理特性。
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公开(公告)号：US09087690B2
公开(公告)日：2015-07-21
申请号：US14009812
申请日：2011-04-06
CPC分类号： H01L21/02181 , C07F7/003 , C23C16/405 , H01L21/02189 , H01L21/0228
摘要： Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
摘要翻译： 公开了含铪和锆的前体及其合成方法。 这些化合物可用于使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积铪，锆，氧化铪和含氧化锆的层。
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