公开(公告)号：US20130113810A1

公开(公告)日：2013-05-09

申请号：US13289935

申请日：2011-11-04

申请人： Chok Wah Ho ,  Fan Zhong

发明人： Chok Wah Ho ,  Fan Zhong

IPC分类号： G06F13/00 ,  H01L31/18 ,  H05K3/10 ,  H01L31/0232

CPC分类号： B81B3/0051 ,  B81B2201/042 ,  G02B26/001 ,  Y10T29/49155

摘要： Systems, methods and apparatus are provided for electromechanical systems devices having a sidewall spacer along at least one sidewall of a conductive line. An electromechanical systems device can include a sidewall spacer along at least one sidewall of a conductive line under a movable layer. The sidewall spacer can be sloped such that the sidewall spacer has a decreasing width away from a substrate under the movable layer. The conductive line can be configured to route an electrical signal to the electromechanical systems device. In some implementations, a black mask structure of an electromechanical systems device can include the conductive line.

摘要翻译： 为具有沿导电线的至少一个侧壁的侧壁间隔物的机电系统装置提供了系统，方法和装置。 机电系统装置可以包括沿可移动层下方的导电线的至少一个侧壁的侧壁间隔物。 侧壁间隔物可以是倾斜的，使得侧壁间隔物在可移动层下面的基底具有减小的宽度。 导线可被配置成将电信号路由到机电系统装置。 在一些实施方案中，机电系统装置的黑色掩模结构可以包括导电线。

公开(公告)号：US08298847B2

公开(公告)日：2012-10-30

申请号：US12766702

申请日：2010-04-23

申请人： Lior Kogut ,  Chun-Ming Wang ,  Chengbin Qui ,  Stephen Zee ,  Fan Zhong

发明人： Lior Kogut ,  Chun-Ming Wang ,  Chengbin Qui ,  Stephen Zee ,  Fan Zhong

IPC分类号： H01L21/00

CPC分类号： G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。

公开(公告)号：US08068268B2

公开(公告)日：2011-11-29

申请号：US11773357

申请日：2007-07-03

申请人： David L Heald ,  Fan Zhong ,  Philip Don Floyd

发明人： David L Heald ,  Fan Zhong ,  Philip Don Floyd

IPC分类号： G02B26/00

CPC分类号： G02B26/001 ,  B81B3/0072 ,  B81B2201/047

摘要： Disclosed is a microelectromechanical system (MEMS) device and method of manufacturing the same. In one aspect, MEMS such as an interferometric modulator include one or more elongated interior posts and support rails supporting a deformable reflective layer, where the elongated interior posts are entirely within an interferometric cavity and aligned parallel with the support rails. In another aspect, the interferometric modulator includes one or more elongated etch release holes formed in the deformable reflective layer and aligned parallel with channels formed in the deformable reflective layer defining parallel strips of the deformable reflective layer.

摘要翻译： 公开了一种微机电系统（MEMS）装置及其制造方法。 在一个方面，诸如干涉式调制器的MEMS包括一个或多个细长的内部柱和支撑可变形的反射层的支撑轨道，其中细长的内部柱完全在干涉式空腔内并与支撑轨平行排列。 在另一方面，干涉式调制器包括形成在可变形反射层中的一个或多个细长蚀刻释放孔，并且与形成在可变形反射层中形成的沟道平行排列，所述可变形反射层限定可变形反射层的平行条带。

公开(公告)号：US20100265563A1

公开(公告)日：2010-10-21

申请号：US12825214

申请日：2010-06-28

申请人： Fan Zhong ,  Lior Kogut

发明人： Fan Zhong ,  Lior Kogut

IPC分类号： G02B26/00 ,  B05D5/06 ,  B05D5/12

CPC分类号： G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：US07652814B2

公开(公告)日：2010-01-26

申请号：US11656681

申请日：2007-01-23

申请人： Fan Zhong ,  Chun-Ming Wang ,  Stephen Zee

发明人： Fan Zhong ,  Chun-Ming Wang ,  Stephen Zee

IPC分类号： G02B26/00

CPC分类号： G02B26/001

摘要： MEMS devices are fabricated by a method that involves forming an optical element (e.g., etalon) over a substrate and then forming a light modulating element (e.g., interferometric modulator) over the optical element. In an embodiment, a support structure for the light modulating element is aligned with the underlying optical element to thereby alter the appearance of the support structure to a viewer. Such an optical element is separated from the support structure by one or more buffer layers.

摘要翻译： 通过包括在衬底上形成光学元件（例如标准具）然后在光学元件上形成光调制元件（例如干涉式调制器）的方法制造MEMS器件。 在一个实施例中，用于光调制元件的支撑结构与下面的光学元件对准，从而将支撑结构的外观改变为观看者。 这样的光学元件通过一个或多个缓冲层与支撑结构分离。

公开(公告)号：US20090009444A1

公开(公告)日：2009-01-08

申请号：US11773357

申请日：2007-07-03

申请人： David L. Heald ,  Fan Zhong ,  Philip Don Floyd

发明人： David L. Heald ,  Fan Zhong ,  Philip Don Floyd

IPC分类号： G09G3/34 ,  B05D5/12 ,  G02F1/21

CPC分类号： G02B26/001 ,  B81B3/0072 ,  B81B2201/047

摘要： Disclosed is a microelectromechanical system (MEMS) device and method of manufacturing the same. In one aspect, MEMS such as an interferometric modulator include one or more elongated interior posts and support rails supporting a deformable reflective layer, where the elongated interior posts are entirely within an interferometric cavity and aligned parallel with the support rails. In another aspect, the interferometric modulator includes one or more elongated etch release holes formed in the deformable reflective layer and aligned parallel with channels formed in the deformable reflective layer defining parallel strips of the deformable reflective layer.

摘要翻译： 公开了一种微机电系统（MEMS）装置及其制造方法。 在一个方面，诸如干涉式调制器的MEMS包括一个或多个细长的内部柱和支撑可变形的反射层的支撑轨道，其中细长的内部柱完全在干涉式空腔内并与支撑轨平行排列。 在另一方面，干涉式调制器包括形成在可变形反射层中的一个或多个细长蚀刻释放孔，并且与形成在可变形反射层中形成的沟道平行排列，所述可变形反射层限定可变形反射层的平行条带。

公开(公告)号：US20070041076A1

公开(公告)日：2007-02-22

申请号：US11506594

申请日：2006-08-18

申请人： Fan Zhong ,  Lior Kogut

发明人： Fan Zhong ,  Lior Kogut

IPC分类号： G02B26/00

CPC分类号： G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：US07160746B2

公开(公告)日：2007-01-09

申请号：US09917438

申请日：2001-07-27

申请人： Fan Zhong ,  Michael Lennon

发明人： Fan Zhong ,  Michael Lennon

IPC分类号： H01L21/00 ,  C23C16/06

CPC分类号： C23C16/401 ,  G02B6/122 ,  G02B2006/121

摘要： A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit. A GeBPSG top clad layer for an optical waveguide structure of a planar lightwave circuit is fabricated such that the top clad layer comprises doped silica glass, wherein the dopant includes Ge (Germanium), P (Phosphorus), and B (Boron). In depositing a top clad layer for the optical waveguide, three separate doping gasses (e.g., GeH4, PH3, and B2H6) are added during the PECVD (plasma enhanced chemical vapor deposition) process to make Ge, P and B doped silica glass (GeBPSG). The ratio of the Ge, P, and B dopants is configured to reduce the formation of crystallization areas within the top clad layer and maintain a constant refractive index within the top clad layer across an anneal temperature range. A thermal anneal process for the top clad layer can be a temperature within a range of 950C to 1050C. The GeBPSG top clad layer reduces the insertion loss of passive arrayed waveguide grating devices and active planar lightwave circuit devices.

摘要翻译： 一种沉积用于平面光波电路的光波导的顶包层的方法。 制造用于平面光波电路的光波导结构的GeBPSG顶包层，使得顶包层包括掺杂的石英玻璃，其中掺杂剂包括Ge（锗），P（磷）和B（硼）。 在沉积用于光波导的顶部包覆层时，三个单独的掺杂气体（例如，GeH 4，PH 3 3和B 2 H） 在PECVD（等离子体增强化学气相沉积）工艺中添加制备Ge，P和B掺杂的石英玻璃（GeBPSG）的工艺。 Ge，P和B掺杂剂的比例被配置为减少顶部包层内的结晶区域的形成，并且在整个退火温度范围内在顶部包覆层内保持恒定的折射率。 用于顶部包层的热退火方法可以是在950℃至1050℃的范围内的温度。 GeBPSG顶层减少了无源阵列波导光栅器件和有源平面光波电路器件的插入损耗。

公开(公告)号：US08229253B2

公开(公告)日：2012-07-24

申请号：US12825214

申请日：2010-06-28

申请人： Fan Zhong ,  Lior Kogut

发明人： Fan Zhong ,  Lior Kogut

IPC分类号： G02F1/01

CPC分类号： G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

摘要： Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

摘要翻译： MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：US20100202039A1

公开(公告)日：2010-08-12

申请号：US12766702

申请日：2010-04-23

申请人： Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

发明人： Lior Kogut ,  Chengbin Qiu ,  Chun-Ming Wang ,  Stephen Zee ,  Fan Zhong

IPC分类号： G02B26/00 ,  C23F1/02

CPC分类号： G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

摘要： Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

摘要翻译： MEMS器件的实施例包括具有基本垂直侧壁的支撑结构。 通过沉积自平面化材料或通过电镀工艺形成某些支撑结构。 通过间隔物蚀刻形成其它支撑结构。 其它MEMS器件包括至少部分在可移动层下方的支撑结构，其中可移动层下面的支撑结构的部分包括凸形侧壁。 在另外的实施例中，支撑结构的一部分延伸穿过可移动层中的孔并且在可移动层的至少一部分上方延伸。