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公开(公告)号:US06367548B1
公开(公告)日:2002-04-09
申请号:US09519064
申请日:2000-03-03
IPC分类号: E21B4325
摘要: Methods and compositions for stimulating multiple intervals in wells by diverting well treatment fluids into multiple intervals by alternately displacing diverting agent from the annulus into a subterranean formation and displacing treatment fluid from a tubing string into the subterranean formation.
摘要翻译: 通过将转移剂从环带交替移位到地层中并将处理流体从管柱移位到地下地层中,通过将井处理流体转移到多个间隔来刺激孔中的多个间隔的方法和组合物。
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公开(公告)号:US5964156A
公开(公告)日:1999-10-12
申请号:US90070
申请日:1998-06-03
申请人: David D. Smith , Jeremy C. Catt
发明人: David D. Smith , Jeremy C. Catt
CPC分类号: G06K15/00 , B41B21/32 , G03F7/2053 , G06K15/02 , H04N1/3872 , G06K2215/0065 , G06K2215/0071
摘要: A method for automatically processing a job in a prepress printing environment includes the steps of: moving an image receiving substrate from a storage bin to a staging area; moving the image receiving substrate from the staging area into a drum; imaging a predefined area of the image receiving substrate in the drum with a laser while simultaneously moving a next image receiving substrate from the storage bin to the staging area; upon completion of the imaging of the image receiving substrate in the drum, simultaneously (a) moving the image receiving substrate from the drum into a processing area for developing an image on the image receiving substrate, and (b) moving the next image receiving substrate from the staging area into the drum; and finally repeating the above steps until the job is completed. The method optionally includes: offsetting the position of the image receiving substrate to alter the location upon the image receiving substrate where the image will be burned; or offsetting the laser position to alter the location upon the image receiving substrate where the image will be burned. A slug line can also be printed at print time outside of the predefined area, and can include identifying information such as a job name, a print drive job identification, a time stamp, a plane name, a page number and user-defined graphics.
摘要翻译: 一种用于在印前打印环境中自动处理作业的方法包括以下步骤:将图像接收基板从存储箱移动到分段区; 将图像接收基板从分段区域移动到滚筒中; 用激光成像鼓中的图像接收基板的预定区域,同时将下一图像接收基板从存储箱移动到分段区域; 同时(a)将图像接收基板从滚筒移动到用于在图像接收基板上显影图像的处理区域中,以及(b)移动下一个图像接收基板 从舞台进入鼓; 最后重复上述步骤直到作业完成。 该方法可选地包括:抵消图像接收基板的位置以改变图像接收基板上将被烧毁的位置; 或抵消激光位置以改变图像被烧录的图像接收基板上的位置。 也可以在预定义区域之外的打印时间打印细线,并且可以包括识别信息,例如作业名称,打印驱动器作业标识,时间戳,平面名称,页码和用户定义的图形。
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公开(公告)号:US20170236966A1
公开(公告)日:2017-08-17
申请号:US15499732
申请日:2017-04-27
申请人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
发明人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
IPC分类号: H01L31/061 , H01L31/18
CPC分类号: H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
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公开(公告)号:US09653638B2
公开(公告)日:2017-05-16
申请号:US14137970
申请日:2013-12-20
申请人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
发明人: Matthieu Moors , David D. Smith , Gabriel Harley , Taeseok Kim
IPC分类号: H01L31/0216 , H01L31/0224 , H01L31/068
CPC分类号: H01L31/061 , H01L31/02167 , H01L31/022425 , H01L31/068 , H01L31/1864 , Y02E10/547
摘要: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.
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35.
公开(公告)号:US09520507B2
公开(公告)日:2016-12-13
申请号:US14579935
申请日:2014-12-22
IPC分类号: H01L27/15 , H01L31/02 , H01L31/18 , H01L31/0368 , H01L31/0224
CPC分类号: H01L31/02008 , H01L21/3221 , H01L31/02167 , H01L31/022441 , H01L31/0368 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
摘要翻译: 制造太阳能电池的方法可以包括在硅衬底上形成电介质区域。 该方法还可以包括在电介质区域上形成发射极区域,并在硅衬底的表面上形成掺杂区域。 在一个实施例中,该方法可以包括在高于900摄氏度的温度下加热硅衬底以将杂质吸收到发射极区域,并将掺杂剂从掺杂剂区域驱动到硅衬底的一部分。
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公开(公告)号:US20160329441A1
公开(公告)日:2016-11-10
申请号:US15213273
申请日:2016-07-18
IPC分类号: H01L31/02 , H01L31/0368 , H01L31/18 , H01L31/0224
CPC分类号: H01L31/02008 , H01L21/3221 , H01L31/02167 , H01L31/022441 , H01L31/0368 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/0747 , H01L31/1804 , H01L31/186 , H01L31/1864 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.
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公开(公告)号:US20160284917A1
公开(公告)日:2016-09-29
申请号:US14672072
申请日:2015-03-27
IPC分类号: H01L31/075 , H01L31/0216 , H01L31/077 , H01L31/0376 , H01L31/0224
CPC分类号: H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/0747 , Y02E10/50
摘要: Methods of fabricating solar cells having passivation layers, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a first surface and a second surface. A plurality of emitter regions is disposed on the first surface of the substrate and spaced apart from one another. An amorphous silicon passivation layer is disposed on each of the plurality of emitter regions and between each of the plurality of emitter regions, directly on an exposed portion of the first surface of the substrate.
摘要翻译: 描述了制造具有钝化层的太阳能电池的方法和所得到的太阳能电池。 在一个示例中,太阳能电池包括具有第一表面和第二表面的基板。 多个发射极区域设置在基板的第一表面上并且彼此间隔开。 非晶硅钝化层设置在多个发射极区域中的每一个上,并且在多个发射极区域中的每一个之间,直接位于衬底的第一表面的暴露部分上。
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公开(公告)号:US20160233348A1
公开(公告)日:2016-08-11
申请号:US15135225
申请日:2016-04-21
申请人: David D. Smith
发明人: David D. Smith
IPC分类号: H01L31/0216 , H01L31/02 , H01L31/068 , H01L31/028 , H01L31/0376
摘要: A solar cell can have a first dielectric formed over a it doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
摘要翻译: 太阳能电池可以具有在硅衬底的其掺杂区域上形成的第一电介质。 太阳能电池可以具有在硅衬底的第二掺杂区域上形成的第二电介质,其中第一电介质是与第二电介质不同类型的电介质。 可以在第一和第二电介质上形成掺杂半导体。 可以在掺杂半导体上形成正型金属和负型金属。
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公开(公告)号:US20160072000A1
公开(公告)日:2016-03-10
申请号:US14578216
申请日:2014-12-19
申请人: David D. Smith
发明人: David D. Smith
IPC分类号: H01L31/18 , H01L31/0236 , H01L31/068 , H01L31/0368 , H01L31/0224
CPC分类号: H01L31/1804 , H01L31/02363 , H01L31/0745 , H01L31/0747 , H01L31/075 , H01L31/1872 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要: Methods of fabricating solar cells using improved front contact heterojunction processes, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having first and second light-receiving surfaces. A tunnel dielectric layer is disposed on the first and second light-receiving surfaces. An N-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the first light-receiving surface. A P-type polycrystalline silicon layer is disposed on the portion of the tunnel dielectric layer disposed on the second light-receiving surface. A transparent conductive oxide layer is disposed on the N-type polycrystalline silicon layer and on the P-type polycrystalline silicon layer. A first set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the N-type polycrystalline silicon layer. A second set of conductive contacts is disposed on the portion of the transparent conductive oxide layer disposed on the P-type polycrystalline silicon layer.
摘要翻译: 描述了使用改进的前接触异质结工艺制造太阳能电池的方法,以及所得到的太阳能电池。 在一个示例中,太阳能电池包括具有第一和第二光接收表面的基板。 隧道介电层设置在第一和第二光接收表面上。 N型多晶硅层设置在设置在第一受光面上的隧道介电层的部分上。 P型多晶硅层设置在设置在第二受光面上的隧道介电层的部分上。 在N型多晶硅层和P型多晶硅层上设置透明导电氧化物层。 第一组导电触点设置在设置在N型多晶硅层上的透明导电氧化物层的部分上。 第二组导电触点设置在设置在P型多晶硅层上的透明导电氧化物层的部分上。
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公开(公告)号:US20160071996A1
公开(公告)日:2016-03-10
申请号:US14945708
申请日:2015-11-19
申请人: Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人: Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号: H01L31/0747 , H01L31/0236 , H01L31/18 , H01L31/0224
CPC分类号: H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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