摘要:
Provided are a bit patterned medium having a super-track, a method of tracking a track of the bit patterned medium, a head appropriate for the bit patterned medium, and an information recording/reproducing apparatus including the bit patterned medium and the head. The bit patterned medium includes a substrate, and a recording layer comprised of a plurality of bit cells which are formed on the substrate by being separated from each other, along a plurality of tracks. Each of the plurality of tracks includes a super-track comprised of a plurality of sub-tracks. Bit cells formed on a sub-track from among the plurality of sub-tracks in the super-track are disposed so as to deviate from bit cells formed on another sub-track from among the plurality of sub-tracks in the super-track. A track ID (identification) for recognizing the super-track, and a servo burst generating a position error signal when a head tracks the super-track, are arranged in an area of each of the plurality of tracks. Meanwhile, the head includes a writing head recording information in units of sub-tracks, and a reading sensor reproducing the information in units of super-tracks.
摘要:
A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
摘要:
Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.
摘要:
A method of fabricating a micro actuator is provided including a media stage having a media loading surface and a coil for driving the media stage, formed on the opposite surface of the media stage to the media loading surface. The method includes forming a groove on a first surface of a first substrate, forming a coil on a first surface of a second substrate, bonding the first surface of the first substrate to the first surface of the second substrate, and forming the media loading surface on a second surface of the second substrate, which is opposite the first surface of the second substrate.
摘要:
Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要:
An electrostatic actuator and a method of driving the same are provided. The actuator controls the displacement of a target object by adjusting a voltage between fixed comb electrodes and a moving comb electrode. The actuator includes an actuator control signal generator generating an actuator control signal by pulse-width modulating an actuator driving signal and a carrier signal; and an actuator unit including the fixed comb electrodes and the moving comb electrode and adjusting the voltage according to the actuator control signal. Accordingly, the displacement can be easily controlled using the pulse-width-modulated actuator driving signal even when both the voltage of the actuator driving signal and the frequency of the carrier signal are high.
摘要:
Provided are a data storage device and a method of tracking data stored in the data storage device. The device includes a data storage medium on which data can be recorded and erased, a plurality of probes for scanning the data storage medium to detect data, a scanner for driving the data storage medium or the probes, and a controller for applying a control signal to the scanner. The method includes (a) oscillating the probe or the data storage medium; (b) detecting an off-track error of the probe on the data storage medium by the oscillation; and (c) adjusting a scanning position of the probe on the data storage medium to compensate for the off-track error.
摘要:
An electrostatic actuator and a method of driving the same are provided. The actuator controls the displacement of a target object by adjusting a voltage between fixed comb electrodes and a moving comb electrode. The actuator includes an actuator control signal generator generating an actuator control signal by pulse-width modulating an actuator driving signal and a carrier signal; and an actuator unit including the fixed comb electrodes and the moving comb electrode and adjusting the voltage according to the actuator control signal. Accordingly, the displacement can be easily controlled using the pulse-width-modulated actuator driving signal even when both the voltage of the actuator driving signal and the frequency of the carrier signal are high.
摘要:
Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
摘要:
An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.