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公开(公告)号：US06858068B2
公开(公告)日：2005-02-22
申请号：US10672479
申请日：2003-09-26
CPC分类号： B01D53/02 , A41D13/0056 , B01D53/0415 , B01D53/0438 , B01D53/261 , B01D2253/102 , B01D2253/104 , B01D2253/108 , B01D2253/112 , B01D2253/25 , B01D2257/80 , B01D2259/4148 , B01D2259/4541 , B01D2259/4583 , B01D2259/657 , Y10S165/902
摘要： A device for adsorbing water vapor from a gas stream. The device can be incorporated with an enclosure or garment in such a manner so as to enable water vapor to be adsorbed, thereby decreasing the relative humidity in the micrlimate surrounding the user. The water adsorption device is light-weight, has a high mass and volumetric energy capacity. A desiccant material is included within the water adsorption device to adsorb water vapor and a phase-change material is located in thermal communication with the desiccant to increase the loading capacity of the desiccant and maintain a cool gas stream by extracting the heat of adsorption from the desiccant.
摘要翻译： 用于从气流中吸附水蒸气的装置。 该装置可以以这样的方式与外壳或衣服结合，以便能够吸附水蒸气，从而降低使用者周围的微气候中的相对湿度。 水吸附装置重量轻，质量高，体积容量大。 水吸附装置中包含干燥剂材料以吸附水蒸汽，相变材料位于与干燥剂热连通以增加干燥剂的负载能力，并通过从吸附装置中提取吸附热量来维持冷气流 干燥剂
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公开(公告)号：US06440381B1
公开(公告)日：2002-08-27
申请号：US09231366
申请日：1999-01-13
IPC分类号： C01B33193
CPC分类号： B01J39/04 , B01J47/10 , B01J49/12 , C01B33/1435
摘要： A continuous process for the conversion of sodium silicate to silicic acid, wherein a moving bed of a protonated ion exchange resin is contacted with an inlet stream of sodium silicate to provide an outlet stream of silicic acid. The outlet stream of silicic acid produced thereby can be processed into a variety of silica products. The outlet moving bed of spent sodium-enriched ion-exchange resin is continuously regenerated into protonated ion-exchange resin by contacting the spent resin with an inlet stream of acid of sufficient strength to exchange the sodium ions in the spent resin with a proton. The regenerated protonated ion-exchange resin is continuously recycled back into the sodium silicate stream for further production of silicic acid.
摘要翻译： 用于将硅酸钠转化为硅酸的连续方法，其中质子离子交换树脂的移动床与硅酸钠的入口流接触以提供硅酸的出口流。 由此产生的硅酸的出口流可以被加工成各种二氧化硅产品。 经过消耗的富含钠的离子交换树脂的出口移动床通过使废树脂与足够强度的酸的入口流接触，将废树脂中的钠离子与质子交换而连续再生成质子离子交换树脂。 将再生的质子离子交换树脂连续再循环回硅酸钠流中，以进一步生产硅酸。
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33.发明申请VACUUM INSULATION PANEL WITH SMOOTH SURFACE METHOD FOR MAKING AND APPLICATIONS OF SAME 审中-公开具有平面表面方法的真空绝热面板的制造和应用公开(公告)号：US20090179541A1
公开(公告)日：2009-07-16
申请号：US12332596
申请日：2008-12-11
申请人： Douglas M. Smith , Stephen Wallace
发明人： Douglas M. Smith , Stephen Wallace
CPC分类号： F25D23/06 , B29C63/02 , B29C2791/006 , B29L2007/002 , B32B3/06 , B32B7/02 , B32B15/08 , F25D2201/14 , Y02B40/34 , Y10T428/231
摘要： Vacuum insulation panels and methods for making vacuum insulation panels. The panels include first and second spaced-apart sidewalls, where at least one of the sidewalls has a very smooth surface. The panels are particularly useful as insulation in applications where a smooth and aesthetically acceptable surface is required, such as in a refrigeration appliance. A method for making a vacuum insulation panel can include placing an insulative core material and a liner within a barrier envelope defining an enclosure, evacuating the enclosure, and sealing the envelope to form the vacuum insulation panel.
摘要翻译： 真空隔热板及制作真空隔热板的方法。 这些面板包括第一和第二间隔开的侧壁，其中至少一个侧壁具有非常光滑的表面。 这些面板在需要光滑和美观可接受的表面的应用中特别有用，例如在制冷设备中。 用于制造真空绝热面板的方法可以包括将绝缘芯材和衬垫放置在限定外壳的隔离罩中，排空外壳，并密封外壳以形成真空绝热面板。
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公开(公告)号：US06495479B1
公开(公告)日：2002-12-17
申请号：US09566287
申请日：2000-05-05
IPC分类号： H01L21469
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10S438/96
摘要： A nanoporous dielectric film useful for the production of semiconductor devices, integrated circuits and the like, is provided, together with processes for producing these improved films. The films are produced by a process that includes (a) preparing a silicon-based, precursor composition including a porogen, (b) coating a substrate with the silicon-based precursor to form a film, (c) aging or condensing the film in the presence of water, (d) heating the gelled film at a temperature and for a duration effective to remove substantially all of said porogen, and wherein the applied precursor composition is substantially aged or condensed in the presence of water in liquid or vapor form, without the application of external heat or exposure to external catalyst.
摘要翻译： 提供了可用于制造半导体器件，集成电路等的纳米多孔介电膜，以及用于制造这些改进的膜的方法。 通过包括（a）制备包含致孔剂的硅基前体组合物的方法制备薄膜，（b）用硅基前体涂覆基材以形成薄膜，（c）将薄膜老化或冷凝 水的存在，（d）在有效去除基本上全部所述致孔剂的温度和持续时间加热胶凝膜，并且其中所施加的前体组合物在液体或蒸汽形式的水存在下基本上老化或冷凝， 无需外部加热或暴露于外部催化剂。
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公开(公告)号：US06172120B2
公开(公告)日：2001-01-09
申请号：US08826982
申请日：1997-04-09
IPC分类号： B01J1300
CPC分类号： B01J13/0052 , B01J13/0091
摘要： Processes for producing gel compositions comprising: esterifying a portion of the surface of a gel composition sufficient to produce a gel composition having a rod density of less than or equal to 0.15 g/cc, and/or a tap density of less than or equal to 0.2 g/cc through contact with at least one esterification agent and at least one catalyst. The processes may be utilized to produce low density gel compositions without the need for a supercritical drying step or thermal treatment.
摘要翻译： 用于生产凝胶组合物的方法，包括：将足以产生棒密度小于或等于0.15g / cc的凝胶组合物的一部分表面凝胶化，和/或振实密度小于或等于 通过与至少一种酯化剂和至少一种催化剂接触来制备0.2g / cc。 该方法可用于生产低密度凝胶组合物，而不需要超临界干燥步骤或热处理。
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公开(公告)号：US6063714A
公开(公告)日：2000-05-16
申请号：US749186
申请日：1996-11-14
IPC分类号： H01L21/314 , H01L21/316 , H01L21/768 , H01L21/00 , B05D3/04
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695 , H01L21/76801
摘要： This pertains generally to precursors and deposition methods suited to aerogel thin film fabrication of nanoporous dielectrics. A method of forming a nanoporous dielectric on a semiconductor substrate is disclosed. By a method according to the present invention, a precursor sol is applied as a nongelling thin film 14 to a semiconductor substrate 10. This substrate may contain patterned conductors 12, gaps 13, and/or other structures. A portion of the solvent is evaporated from the thin film 14 to produce a reduced thickness film 18. Film 18 is gelled and may be aged. A surface modification agent is introduced to the reaction atmosphere in a vaporish form, e.g., a vapor, mist, aerosol, or similar form. The surface modifier can then diffuse into, condense onto, and/or settle onto the wet gel and then diffuse throughout the thin film. This vaporish introduction of the surface modification agent ensures that there are no strong fluid flows across the wafer that might damage the wet gel. It can also be compatible with standard processing equipment and can potentially be used with other reaction atmosphere controls that reduce premature drying of the gel.
摘要翻译： 这通常涉及适用于纳米多孔电介质的气凝胶薄膜制造的前体和沉积方法。 公开了一种在半导体衬底上形成纳米多孔电介质的方法。 通过根据本发明的方法，将前体溶胶作为不合格薄膜14施加到半导体衬底10.该衬底可以包含图案化导体12，间隙13和/或其它结构。 溶剂的一部分从薄膜14蒸发以产生厚度减薄的薄膜18.薄膜18胶凝并且可以老化。 将表面改性剂以蒸气形式，例如蒸汽，雾，气溶胶或类似形式引入反应气氛中。 然后，表面改性剂可以扩散进入，冷凝到和/或沉降到湿凝胶上，然后在整个薄膜中扩散。 表面改性剂的蒸发引入确保了晶片上没有强大的流体流动，这可能会损坏湿凝胶。 它也可以与标准的加工设备兼容，并且可以与其他反应气氛控制器一起使用，以减少凝胶的过早干燥。
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公开(公告)号：US5928723A
公开(公告)日：1999-07-27
申请号：US826978
申请日：1997-04-09
CPC分类号： C04B41/009 , C04B18/146 , C04B41/4584 , C04B41/81 , C09C1/3063 , C09C3/08 , C01P2004/80 , C01P2006/10 , C04B2111/27 , Y02W30/94
摘要： A process for producing surface modified metal oxide and/or organo-metal oxide compositions comprising esterifying at least a portion of the metal oxide and/or organo-metal oxide composition through contact with at least one esterification agent and at least one catalyst wherein the esterification agent and the catalyst are in the liquid phase. The process may be utilized to produce hydrophobic metal oxide and/or organo-metal oxide compositions at ambient temperature and/or ambient pressure conditions.
摘要翻译： 一种用于生产表面改性的金属氧化物和/或有机金属氧化物组合物的方法，其包括通过与至少一种酯化剂和至少一种催化剂接触来酯化至少一部分金属氧化物和/或有机金属氧化物组合物，其中酯化 试剂和催化剂处于液相。 该方法可用于在环境温度和/或环境压力条件下制备疏水性金属氧化物和/或有机金属氧化物组合物。
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38.发明授权Porous composites as a low dielectric constant material for electronics applications 失效多孔复合材料作为用于电子应用的低介电常数材料
公开(公告)号：US5561318A
公开(公告)日：1996-10-01
申请号：US477029
申请日：1995-06-07
申请人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
发明人： Bruce E. Gnade , Chih-Chen Cho , Douglas M. Smith
IPC分类号： C04B38/00 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/31695 , H01L21/76835 , H01L23/5222 , H01L23/5329 , H01L21/3121 , H01L2221/1047 , H01L2924/0002
摘要： This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying and gelling one or more solutions between and over conductors 24 and drying the wet gel to create at least porous dielectric sublayers 28 and 29. By varying the composition of the solutions, gelling conditions, drying temperature, composition of the solvents in the wet gel, or a combination of these approaches, the porosity of the sublayers may be tailored individually. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.
摘要翻译： 本发明提供一种在相邻导体之间制造具有降低的电容的半导体器件的方法。 该方法可以包括在导体24之间和之上施加和凝胶化一种或多种溶液并干燥湿凝胶以产生至少多孔介电子层28和29.通过改变溶液的组成，胶凝条件，干燥温度，溶剂的组成 在湿凝胶中，或这些方法的组合，子层的孔隙率可以单独定制。 无孔介电层30可以形成在多孔层28之上，多孔层28可以完成层间电介质。 公开了一种用于产生多孔介电层的新方法，其可以在真空或环境压力下完成，但是在干燥期间导致电介质的孔隙率，孔径和收缩相当于仅通过在超临界压力下干燥凝胶可获得的电介质层。
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39.发明授权Porous dielectric material with improved pore surface properties for electronics applications 失效多孔电介质材料，具有改进的孔表面性能，适用于电子应用
公开(公告)号：US5523615A
公开(公告)日：1996-06-04
申请号：US474273
申请日：1995-06-07
申请人： Chi-Chen Cho , Bruce E. Gnade , Douglas M. Smith
发明人： Chi-Chen Cho , Bruce E. Gnade , Douglas M. Smith
IPC分类号： H01L21/768 , H01L21/316 , H01L21/469 , H01L23/522 , H01L23/532 , H01L23/58 , H01L29/40
CPC分类号： H01L23/5329 , H01L21/7682 , H01L23/5222 , H01L2221/1047 , H01L2924/0002
摘要： This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for sample, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.
摘要翻译： 本发明提供一种用于半导体器件的改进的多孔结构及其制造方法。 该方法可以应用于可以在图案化导体24之间沉积用于样品的现有多孔结构28.该方法可以包括在还原性气氛（优选形成气体）中烘烤该结构以使孔表面脱羟基化。 该方法可以包括在含卤素气氛中烘烤该结构以将卤素键合到孔表面。 已经发现，以这种方式处理的多孔结构通常相对于未处理的样品表现出改善的介电性能。
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公开(公告)号：US5028352A
公开(公告)日：1991-07-02
申请号：US378747
申请日：1989-07-11
申请人： Susan L. Hietala , Douglas M. Smith
发明人： Susan L. Hietala , Douglas M. Smith
摘要： A silica-alumina composition characterized by having an essentially closed pore surface as measurable by low surface area consisting essentially of a range of alumina by weight therein of from about 40% to about 50% and the remainder by weight, silica, the surface area of said composition being substantially less in magnitude than that for silica-alumina compositions having a percentage by weight of alumina essentially outside of said range, and further characterized by having a skeletal density for percentages of alumina by weight within a portion of said range substantially less than the skeletal density of silica-alumina compositions having a percentage by weight of alumina substantially outside said portion of said range.
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