公开(公告)号：US20100117123A1

公开(公告)日：2010-05-13

申请号：US12690024

申请日：2010-01-19

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

IPC分类号： H01L31/112

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

公开(公告)号：US07982177B2

公开(公告)日：2011-07-19

申请号：US12023797

申请日：2008-01-31

申请人： Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01J40/14 ,  H01L31/0232

CPC分类号： H01L27/14625 ,  H01L27/14685

摘要： An array of pixels is formed using a substrate, where each pixel has a substrate having an incident side for receiving incident light, a photosensitive region formed in the substrate, and a reflector having a complex-shaped surface. The reflector is formed in a portion of the substrate that is opposed to the incident side such that light incident on the complex-shaped surface of the reflector is reflected towards the photosensitive region.

摘要翻译： 使用基板形成像素阵列，其中每个像素具有用于接收入射光的入射侧的基板，形成在基板中的感光区域和具有复杂形状表面的反射器。 反射器形成在与入射侧相对的基板的一部分中，使得入射在反射器的复合形状表面上的光被反射到感光区域。

公开(公告)号：US07741666B2

公开(公告)日：2010-06-22

申请号：US12140848

申请日：2008-06-17

申请人： Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14643 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/14689

摘要： A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N− region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.

摘要翻译： 背面照明成像传感器包括具有P型区域的半导体层。 在半导体层内形成前侧和后侧P +掺杂层。 在半导体层内形成具有光电二极管的成像像素，其中光电二极管是在前侧P +掺杂层和背面P +掺杂层之间形成在半导体层的P型区域内的N-区域。

公开(公告)号：US20090200585A1

公开(公告)日：2009-08-13

申请号：US12140848

申请日：2008-06-17

申请人： Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/14689

摘要： A backside illuminated imaging sensor includes a semiconductor layer having a P-type region. A frontside and backside P+ doped layers are formed within the semiconductor layer. An imaging pixel having a photodiode is formed within the semiconductor layer, where the photodiode is an N- region formed within the P-type region of the semiconductor layer between the frontside P+ doped layer and the backside P+ doped layer.

摘要翻译： 背面照明成像传感器包括具有P型区域的半导体层。 在半导体层内形成前侧和后侧P +掺杂层。 在半导体层内形成具有光电二极管的成像像素，其中光电二极管是在前侧P +掺杂层和背面P +掺杂层之间形成在半导体层的P型区域内的N-区域。

公开(公告)号：US20100314667A1

公开(公告)日：2010-12-16

申请号：US12781638

申请日：2010-05-17

申请人： Hidetoshi Nozaki ,  Tiejun Dai

发明人： Hidetoshi Nozaki ,  Tiejun Dai

IPC分类号： H01L31/112 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687

摘要： Embodiments of a pixel that includes a photosensitive region, a floating diffusion region, and a transistor transfer gate disposed between the photosensitive region and the floating diffusion region. The transfer gate includes first and second transfer gate elements, the first transfer gate element having a different doping than the second transfer gate element. By controlling the doping of the first and second transfer gate elements a transfer gate can be provided with a greater threshold voltage near the photosensitive region and a lesser threshold voltage near the floating diffusion region. Other embodiments, including process embodiments, are disclosed and claimed.

摘要翻译： 包括光敏区域，浮动扩散区域和设置在感光区域和浮动扩散区域之间的晶体管传输栅极的像素的实施例。 传输门包括第一和第二传输门元件，第一传输门元件具有与第二传输门元件不同的掺杂。 通过控制第一和第二传输栅极元件的掺杂，传输栅极可以在光敏区域附近提供更大的阈值电压，并且在浮动扩散区域附近提供较小的阈值电压。 包括流程实施例的其它实施例被公开和要求保护。

公开(公告)号：US06521925B1

公开(公告)日：2003-02-18

申请号：US09537745

申请日：2000-03-30

申请人： Akiko Mori ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroaki Ishiwata ,  Hidetoshi Nozaki

发明人： Akiko Mori ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Hiroaki Ishiwata ,  Hidetoshi Nozaki

IPC分类号： H01L31062

CPC分类号： H01L29/0847 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14654 ,  H01L31/0352

摘要： A solid-state image sensor comprises a photodiode which is provided in a p-type substrate or a p-type well and composed of a first n-type region for storing photoelectrically converted signal charges, a gate electrode provided above the substrate or well so as to be adjacent to one end of the photodiode, and a n-type drain provided at the surface of the substrate or well opposite to the photodiode, with the gate electrode interviewing therebetween. There is provided a second n-type region which is formed so as to be in contact with the upper part of the first n-type region on the gate electrode side and one end of which is formed to self-align with one end of the gate electrode to be part of the photodiode. This construction prevents the short-channel effect of the signal read transistor section and reduces or eradicates the left-over signal charges stored in the photodiode, thereby reducing noise and improving the sensitivity of the sensor.

摘要翻译： 固态图像传感器包括设置在p型衬底或p型阱中并由用于存储光电转换的信号电荷的第一n型区域，设置在衬底或阱上方的栅电极组成的光电二极管， 与光电二极管的一端相邻，以及设置在基板的表面或与光电二极管相对的阱的n型漏极，门电极与其间进行访问。 提供了第二n型区域，其形成为与栅极电极侧上的第一n型区域的上部接触，并且其一端形成为与第一n型区域的一端自对准 栅电极成为光电二极管的一部分。 这种结构防止信号读取晶体管部分的短沟道效应，并且减少或消除存储在光电二极管中的剩余信号电荷，从而降低噪声并提高传感器的灵敏度。

公开(公告)号：US06271554B1

公开(公告)日：2001-08-07

申请号：US09110074

申请日：1998-07-02

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US5527417A

公开(公告)日：1996-06-18

申请号：US446290

申请日：1995-05-22

申请人： Yoshinori Iida ,  Akihiko Furukawa ,  Tetsuya Yamaguchi ,  Michio Sasaki ,  Hisanori Ihara ,  Hidetoshi Nozaki ,  Takaaki Kamimura

发明人： Yoshinori Iida ,  Akihiko Furukawa ,  Tetsuya Yamaguchi ,  Michio Sasaki ,  Hisanori Ihara ,  Hidetoshi Nozaki ,  Takaaki Kamimura

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/48 ,  C23F1/02

CPC分类号： C23C16/4405 ,  C23C16/482 ,  C23C16/488

摘要： A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.

摘要翻译： 一种光辅助CVD装置，包括用于存储基板的反应室，用于将源气体供给到反应室中的入口端口，用于在进入反应室的源气体上照射光的光源，以在辐射时分解源气体 由此在基板上沉积膜，将用于向反应室供给蚀刻气体的入口端口和放电电极，该放电电极布置在基板上方并且具有围绕基板上方的空间的激励蚀刻气体 。

公开(公告)号：US4772565A

公开(公告)日：1988-09-20

申请号：US51590

申请日：1987-05-20

申请人： Takaaki Kamimura ,  Hidetoshi Nozaki ,  Masahiko Hirose

发明人： Takaaki Kamimura ,  Hidetoshi Nozaki ,  Masahiko Hirose

IPC分类号： H01L21/205 ,  H01L27/146 ,  H01L31/20 ,  H01L27/14 ,  H01L31/02

CPC分类号： H01L31/202 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/14665 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of manufacturing a solid-state image sensor comprises the steps of preparing a solid-state image sensor substrate in which a signal charge storing diode and a signal charge readout section are formed and forming, as a photoelectric conversion section, a photoconductive film having an amorphous silicon film on the substrate. The amorphous silicon film is formed by introducing a source gas containing silicon compounds on the substrate and decomposing the source gas by radiating ultraviolet light on the source gas while the solid-state image sensor substrate is kept at a temperature of 100.degree. to 350.degree. C.

摘要翻译： 一种制造固态图像传感器的方法包括以下步骤：制备其中形成信号电荷存储二极管和信号电荷读出部分的固态图像传感器基板，并形成具有光电转换部分的光电导膜， 衬底上的非晶硅膜。 通过在衬底上引入含有硅化合物的源气体并在源气体上照射紫外光来分解原料气而形成非晶硅膜，同时将固态图像传感器基板保持在100℃至350℃的温度 。

公开(公告)号：US08766391B2

公开(公告)日：2014-07-01

申请号：US13430193

申请日：2012-03-26

申请人： Hidetoshi Nozaki

发明人： Hidetoshi Nozaki

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/1464 ,  H01L27/14683

摘要： Photodetector arrays, image sensors, and other apparatus are disclosed. In one aspect, an apparatus may include a surface to receive light, a plurality of photosensitive regions disposed within a substrate, and a material coupled between the surface and the plurality of photosensitive regions. The material may receive the light. At least some of the light may free electrons in the material. The apparatus may also include a plurality of discrete electron repulsive elements. The discrete electron repulsive elements may be coupled between the surface and the material. Each of the discrete electron repulsive elements may correspond to a different photosensitive region. Each of the discrete electron repulsive elements may repel electrons in the material toward a corresponding photosensitive region. Other apparatus are also disclosed, as are methods of use, methods of fabrication, and systems incorporating such apparatus.

摘要翻译： 公开了光检测器阵列，图像传感器和其它装置。 在一个方面，一种装置可以包括用于接收光的表面，设置在基底内的多个感光区域和耦合在该表面和多个光敏区域之间的材料。 材料可能会收到光。 至少一些光可以在材料中自由电子。 该装置还可以包括多个离散的电子排斥元件。 离散的电子排斥元件可以耦合在表面和材料之间。 每个离散的电子排斥元件可以对应于不同的感光区域。 每个离散的电子排斥元件可以将材料中的电子排斥到相应的感光区域。 还公开了其他装置，以及使用方法，制造方法以及包含这种装置的系统。