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    SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
    32.
    发明申请
    SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION 审中-公开
    半导体元件和绝缘层形成组合物

    公开(公告)号：US20170005266A1

    公开(公告)日：2017-01-05

    申请号：US15259164

    申请日：2016-09-08

    Applicant: FUJIFILM Corporation

    Inventor： Yuzo NAGATA ,  Hiroo TAKIZAWA ,  Tomotaka TSUCHIMURA ,  Takuya TSURUTA

    IPC: H01L51/00 ,  C08F20/28 ,  C08F12/22 ,  H01L51/05 ,  C08F12/24

    CPC classification number: H01L51/004 ,  C08F12/22 ,  C08F12/24 ,  C08F20/28 ,  C08F212/14 ,  C08F2500/02 ,  C08F2800/10 ,  C08F2810/20 ,  H01L21/02118 ,  H01L29/786 ,  H01L51/0043 ,  H01L51/0055 ,  H01L51/0071 ,  H01L51/0094 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0566 ,  C08F2220/325 ,  C08F212/32 ,  C08F220/36 ,  C08F2220/302 ,  C08F2220/343

    Abstract: Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R1a represents a hydrogen atom, a halogen atom, or an alkyl group. L1a and L2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L2a-(X)m2a)'s may be the same or different from each other. In General Formula (IB), R1b represents a hydrogen atom, a halogen atom, or an alkyl group. L1b represents a single bond or a linking group, and Ar1b represents an aromatic ring, m1b represents an integer of 1 to 5.

    Abstract translation: 在通式（IA）中，R 1a表示氢原子，卤素原子或烷基。 L1a和L2a各自独立地表示单键或连接基团。 X表示可交联基团。 m2a表示1〜5的整数，并且在m2a为2以上的情况下，m 1a的数X可以相同或不同，m1a表示1〜5的整数，在m1a为 2个以上时，m1a个（-L2a-（X）m2a）可以相同也可以不同。 在通式（IB）中，R 1b表示氢原子，卤素原子或烷基。 L1b表示单键或连接基，Ar1b表示芳香环，m1b表示1〜5的整数。

    THIN FILM TRANSISTOR
    33.
    发明申请
    THIN FILM TRANSISTOR 有权
    薄膜晶体管

    公开(公告)号：US20160351824A1

    公开(公告)日：2016-12-01

    申请号：US15236914

    申请日：2016-08-15

    Applicant: FUJIFILM Corporation

    Inventor： Hiroo TAKIZAWA

    IPC: H01L51/00

    CPC classification number: H01L51/0071 ,  H01L29/786 ,  H01L51/0035 ,  H01L51/0073 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/105 ,  H01L2251/301

    Abstract: Provided is a thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer provided between the gate electrode and the semiconductor layer and formed of an organic polymer compound, and a source electrode and a drain electrode provided in contact with the semiconductor layer and connected via the semiconductor layer, on a substrate, in which the content of metals selected from Mg, Ca, Ba, Al, Sn, Pb, Cr, Mn, Fe, Ni, Cu, Zn, and Ag in the gate insulating layer is 10 ppb to 1 ppm in terms of total amount, or the content of non-metal ionic materials selected from halogen ions, sulfate ions, nitrate ions, and phosphate ions is 1 ppm to 100 ppm in terms of total amount.

    Abstract translation: 提供了一种薄膜晶体管，其包括栅电极，半导体层，设置在栅电极和半导体层之间并由有机聚合物化合物形成的栅绝缘层，以及与半导体接触设置的源电极和漏电极 层，并且通过半导体层在基板上连接，其中栅极绝缘中选自Mg，Ca，Ba，Al，Sn，Pb，Cr，Mn，Fe，Ni，Cu，Zn和Ag的金属含量 或者从卤素离子，硫酸根离子，硝酸根离子和磷酸根离子中选出的非金属离子性物质的含量为总量的1ppm〜100ppm。

    PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD
    34.
    发明申请
    PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD 审中-公开
    图案形成方法，电子装置制造方法，电子装置，嵌段共聚物和嵌段共聚物生产方法

    公开(公告)号：US20160291461A1

    公开(公告)日：2016-10-06

    申请号：US15172639

    申请日：2016-06-03

    Applicant: FUJIFILM Corporation

    Inventor： Hayato YOSHIDA ,  Hiroo TAKIZAWA ,  Keizo KIMURA ,  Shoichi SAITOH ,  Eriko MITANI

    IPC: G03F7/00 ,  H01L21/027 ,  G03F7/32 ,  C08F297/02 ,  G03F7/20

    CPC classification number: G03F7/0002 ,  B82Y40/00 ,  C08F297/02 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2004 ,  G03F7/322 ,  H01L21/0271

    Abstract: There are provided a pattern forming method in which, in self-organization lithography using a graphoepitaxy method, high miniaturization of patterns can be achieved with high quality and high efficiency by a pattern forming method including (i) a step of forming a block copolymer layer containing a specific first block copolymer or a specific second block copolymer on a specific substrate, (ii) a step of phase-separating the block copolymer layer, and (iii) a step of selectively removing at least one phase of a plurality of phases of the block copolymer layer, an electronic device manufacturing method using the pattern forming method and the electronic device, and a block copolymer used in the pattern forming method and the production method thereof.

    Abstract translation: 提供了一种图案形成方法，其中在使用划线方法的自组织光刻中，通过图案形成方法可以以高质量和高效率实现图案的高度小型化，其包括（i）形成嵌段共聚物层 在特定基材上含有特定的第一嵌段共聚物或特定的第二嵌段共聚物，（ii）相分离嵌段共聚物层的步骤，和（iii）选择性地除去多相的至少一相的步骤 嵌段共聚物层，使用图案形成方法的电子器件制造方法和电子器件，以及用于图案形成方法及其制造方法的嵌段共聚物。

    PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE
    37.
    发明申请
    PATTERN FORMING METHOD, RESIST PATTERN FORMED BY THE METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE 有权
    图案形成方法，通过该方法形成的电阻图案，使用其制造电子器件的方法和电子器件

    公开(公告)号：US20150253673A1

    公开(公告)日：2015-09-10

    申请号：US14719830

    申请日：2015-05-22

    Applicant: FUJIFILM Corporation

    Inventor： Kaoru IWATO ,  Takanobu TAKEDA ,  Hiroo TAKIZAWA

    IPC: G03F7/30

    CPC classification number: G03F7/30 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/325 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/30604

    Abstract: There is provided a pattern forming method including (1) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) capable of increasing the polarity by the action of an acid so that a solubility thereof in a developer containing an organic solvent is decreased, (2) exposing the film, (3) developing the film by a developer including an organic solvent to form a negative pattern having a space part obtained by removing a part of the film and a residual film part which is not removed by the developing, (4) forming a resist film for reversing a pattern, on the negative pattern, so as to be embedded in the space part in the negative pattern, and (5) reversing the negative pattern into a positive pattern by removing the residual film part in the negative pattern by using an alkaline wet etching liquid.

    Abstract translation: 提供了一种图案形成方法，其包括（1）通过含有能够通过酸的作用增加极性的树脂（A）的光化射线敏感性或辐射敏感性树脂组合物形成膜，使得其在 包含有机溶剂的显影剂减少，（2）使膜曝光，（3）通过包含有机溶剂的显影剂显影膜，以形成具有通过除去一部分膜而获得的空间部分的负图案和残留膜部分 （4）在负图案上形成用于反转图案的抗蚀剂膜，以便嵌入在负图案的空间部分中，并且（5）将负图案反转为正的图案 通过使用碱性湿蚀刻液除去负图案中的残留膜部分的图案。

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