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    PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    31.
    发明申请
    PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
    图案形成方法，电阻图案，制造电子器件的方法和电子器件

    公开(公告)号：US20170075222A1

    公开(公告)日：2017-03-16

    申请号：US15358537

    申请日：2016-11-22

    Applicant: FUJIFILM Corporation

    Inventor： Toru TSUCHIHASHI ,  Wataru NIHASHI ,  Hideaki TSUBAKI

    IPC: G03F7/039 ,  G03F7/20 ,  C08F220/18 ,  G03F7/32 ,  G03F7/40 ,  G03F7/004 ,  G03F7/16

    Abstract: A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.

    Abstract translation: 图案形成方法依次包括使用含有具有酚羟基的重复单元的树脂（A）的活性光敏感或辐射敏感性树脂组合物在基材上形成膜，并且重复 具有通过酸的作用分解以产生羧基的基团的单元和在用活性光或辐射照射时产生酸的化合物（B）; 曝光电影; 并使用包括有机溶剂的显影剂显影所述曝光的膜，其中包含有机溶剂的显影剂含有具有8个或更多个碳原子的有机溶剂和2个或更少的杂原子的量为50质量％以上。

    METHOD OF FORMING PATTERNS
    32.
    发明申请
    METHOD OF FORMING PATTERNS 审中-公开

    公开(公告)号：US20160009936A1

    公开(公告)日：2016-01-14

    申请号：US14859794

    申请日：2015-09-21

    Applicant: FUJIFILM Corporation

    Inventor： Hideaki TSUBAKI

    IPC: C09D127/12 ,  G03F7/32 ,  G03F7/20 ,  G03F7/11 ,  G03F7/16

    CPC classification number: C09D127/12 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274 ,  H01L21/0275

    Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE
    34.
    发明申请
    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE 审中-公开
    图案形成方法，电子束敏感或极端超紫外线辐射敏感性树脂组合物，电阻膜，使用其和电子器件的电子器件的制造方法

    公开(公告)号：US20140199617A1

    公开(公告)日：2014-07-17

    申请号：US14227444

    申请日：2014-03-27

    Applicant: FUJIFILM CORPORATION

    Inventor： Hideaki TSUBAKI ,  Hiroo TAKIZAWA ,  Takeshi KAWABATA

    IPC: G03F7/20 ,  G03F7/038

    CPC classification number: G03F7/20 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

    Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid and (B) a low molecular weight compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation and decomposing by an action of an acid to decrease a solubility of the low molecular weight compound (B) in an organic solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

    Abstract translation: 图案形成方法包括以下顺序：用电子束敏感或极紫外线辐射敏感性树脂组合物形成膜的步骤（1），其包含（A）具有酸分解重复单元并能够降低的树脂 通过酸的作用使树脂（A）在含有有机溶剂的显影剂中的溶解度和（B）在电子束照射或极紫外线照射时能产生酸的低分子量化合物，并通过动作分解 的酸，以降低低分子量化合物（B）在有机溶剂中的溶解度; 步骤（2），用电子束或极紫外线辐射曝光胶片; 以及在暴露之后用含有机溶剂的显影剂显影该膜以形成负图案的步骤（4）。

    METHOD OF FORMING PATTERNS
    35.
    发明申请
    METHOD OF FORMING PATTERNS 有权
    形成图案的方法

    公开(公告)号：US20140080068A1

    公开(公告)日：2014-03-20

    申请号：US14083816

    申请日：2013-11-19

    Applicant: FUJIFILM Corporation

    Inventor： Hideaki TSUBAKI

    IPC: H01L21/027

    CPC classification number: C09D127/12 ,  G03F7/0392 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274 ,  H01L21/0275

    Abstract: A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer.

    Abstract translation: 一种形成图案的方法包括（a）用负显影用抗蚀剂组合物涂覆基材以形成抗蚀剂膜，其中抗蚀剂组合物含有能够通过酸的作用而增加极性的树脂，并变得更可溶于阳性 显影剂，并且在用光化射线或辐射照射时不太可溶于负显影剂，（b）在形成抗蚀剂膜之后和在曝光抗蚀剂膜之前，用保护膜组合物在抗蚀剂膜上形成保护膜，（c） 通过浸渍介质形成抗蚀膜，（d）用负极显影剂进行显影。

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