公开(公告)号：US20070266944A1

公开(公告)日：2007-11-22

申请号：US11660091

申请日：2005-08-12

申请人： Hachishiro Iizuka ,  Akira Yasumuro ,  Koichiro Kimura ,  Norihiko Tsuji

发明人： Hachishiro Iizuka ,  Akira Yasumuro ,  Koichiro Kimura ,  Norihiko Tsuji

IPC分类号： C23C16/02

CPC分类号： C23C16/4402 ,  C23C16/4401 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/4585

摘要： A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.

摘要翻译： 一种成膜装置，包括用于供给液体或气液混合物的原料的原料供给部，用于蒸发原料以形成原料气体的原料蒸发部，以及用于导入 使用所形成的原料气体的成膜处理，以及从原料蒸发部到成膜部的原料气体的输送路径上的过滤器。 过滤器的外边缘通过循环支撑构件在其整个周边上被压靠在输送路径的内表面上，循环支撑构件通过沿着挤压方向的加载不如外边缘而变形，并被固定到 传送路径的内表面处于压缩状态，在传送路径的内表面和支撑构件之间。

公开(公告)号：US20070227668A1

公开(公告)日：2007-10-04

申请号：US11694027

申请日：2007-03-30

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： C23C16/12 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber; a plasma generating unit for generating a plasma of a gas supplied into the processing chamber; a substrate mounting table, disposed in the processing chamber, for mounting a semiconductor substrate having a surface on which an etching and/or a film forming process is to be performed. The apparatus further includes a metal member disposed in the processing chamber and to be etched by the plasma generated in the processing chamber to release a precursor of a film to be formed by the film forming process into the processing chamber; a gas supply unit for supplying a first and a second gas into the processing chamber, wherein the second gas which includes halogen atoms and is different from the first gas; a first and a second wiring for supplying high frequency power to the metal member and the substrate mounting table, respectively.

摘要翻译： 等离子体处理装置包括处理室; 等离子体产生单元，用于产生供应到处理室中的气体的等离子体; 设置在处理室中的基板安装台，用于安装具有要进行蚀刻和/或成膜工艺的表面的半导体基板。 该设备还包括设置在处理室中并被待处理室中产生的等离子体蚀刻的金属部件，以将通过成膜工艺形成的膜的前体释放到处理室中; 用于将第一和第二气体供应到所述处理室中的气体供应单元，其中所述第二气体包括卤素原子并且不同于所述第一气体; 用于分别向金属构件和基板安装台提供高频电力的第一和第二布线。

公开(公告)号：US20050000450A1

公开(公告)日：2005-01-06

申请号：US10492979

申请日：2002-10-15

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： H01L21/68 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68742

摘要： A lift mechanism for an object-to-be-processed is provided which can minimize displacement of an object-to-be-processed by quickly discharging the gas in the space on the side of the backside surface of the object-to-be-processed when the object-to-be-processed is mounted on a mount stand. In a lift mechanism, in which a plurality of pin-insertion holes 50 are formed in a mount stand 38 provided inside a evacuatable processing container 22, a push-up pin 52 is inserted in each of said pin-insertion holes 50, said push-up pin 52 capable of moving upwardly and downwardly, and a push-up member moves said push-up pin upwardly and downwardly so as to mount an object-to-be-processed W on said mount stand, a communication path 66 is formed in said push-up pin to communicate the space S1 above said mount stand with the space S2 below said mount stand. The gas in the space on the side of the backside surface of an object-to-be-processed can thus be discharged quickly when the object-to-be-processed is mounted on the mount stand, thus inhibiting the object-to-be-processed to be displaced.

摘要翻译： 提供了一种用于被处理物体的提升机构，其能够通过快速排出待被处理物体的背面侧的空间中的气体来最小化待处理物体的位移， 当对象被处理安装在安装支架上时被处理。 在提供机构中，在设置在可抽空处理容器22内部的安装支架38中形成有多个销插入孔50，在每个所述销插入孔50中插入有上推销52，所述推动 能够向上和向下移动的推杆52，并且上推构件向上和向下移动所述上推销，以便在所述安装支架上安装待加工物体W，形成连通路径66 在所述上推销中，将所述安装支架上方的空间S1与所述安装支架下方的空间S2进行通信。 因此，当被处理物体安装在安装支架上时，能够将待处理物体的背面侧的空间中的气体快速排出，从而抑制被处理体的物体 被处理流离失所。

公开(公告)号：US09117633B2

公开(公告)日：2015-08-25

申请号：US13271399

申请日：2011-10-12

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/321 ,  H01J37/3244 ,  Y10T137/8593

摘要： There is provided a plasma processing apparatus for performing a process on a substrate by generating inductively coupled plasma. The plasma processing apparatus includes an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window; multiple gas inlets provided at the upper lid; a high frequency coil positioned above the dielectric window at an outside of the processing chamber; and a gas supply device supported by the upper lid and provided under the dielectric window. Here, the gas supply device includes a single sheet of plate having through holes, multiple groove-shaped gas paths are formed between the plate and the dielectric window, end portions of the groove-shaped gas paths are opened to edges of the through holes and communicate with the gas inlets, and the gas supply device is configured to supply the processing gas into the processing chamber via the through holes.

摘要翻译： 提供了一种等离子体处理装置，用于通过产生电感耦合等离子体在衬底上进行处理。 等离子体处理装置包括设置成覆盖处理室的顶部开口的上盖，其具有电介质窗口; 设置在上盖的多个气体入口; 位于所述处理室外侧的所述电介质窗口上方的高频线圈; 以及由上盖支撑并设置在电介质窗下的气体供给装置。 这里，气体供给装置包括具有通孔的单片板，在板和电介质窗之间形成有多个槽状气体通路，槽状气体通路的端部向通孔的边缘开口， 与气体入口连通，气体供给装置经由通孔将处理气体供给到处理室。

公开(公告)号：US08986495B2

公开(公告)日：2015-03-24

申请号：US12958853

申请日：2010-12-02

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： C23F1/08 ,  C23C16/455 ,  H01L21/67 ,  H01J37/32

CPC分类号： H01J37/32623 ,  C23C16/45563 ,  C23C16/4558 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01L21/6719

摘要： A plasma processing apparatus includes an upper electrode that is installed within a processing chamber so as to face a lower electrode, supplies a gas through a plurality of gas supply holes provided in a facing surface and is vertically movable; a cover body installed above the upper electrode so as to airtightly seal a top opening of the processing chamber; a multiple number of gas exhaust holes provided in the facing surface; a ring-shaped member that is arranged along a circumference of the upper electrode, is vertically movable along with the upper electrode, and forms, at a lowered position, a processing space surrounded by the lower electrode, the upper electrode and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member.

摘要翻译： 等离子体处理装置包括：上部电极，其安装在处理室内以面向下部电极，通过设置在相对表面上的多个气体供给孔供给气体，并且是可垂直移动的; 盖体，安装在上电极上方，以密封密封处理室的顶部开口; 设置在所述面对表面中的多个排气孔; 沿着上部电极的圆周布置的环状构件与上部电极一起可垂直移动，并且在下降位置处形成由下部电极，上部电极和环状的被包围的处理空间 会员; 多个气体供给孔，其在所述环状部件的内壁上开口; 以及在所述环状部件的内壁开口的多个排气孔。

公开(公告)号：US08236106B2

公开(公告)日：2012-08-07

申请号：US12403722

申请日：2009-03-13

申请人： Hachishiro Iizuka ,  Fumiko Kiriishi ,  Tsuyoshi Komiyama

发明人： Hachishiro Iizuka ,  Fumiko Kiriishi ,  Tsuyoshi Komiyama

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412 ,  C23C16/45508 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A shower head is provided in a processing chamber for processing a substrate therein. Further, the shower head has a facing surface facing a mounting table for mounting thereon the substrate and serves to supply one or more gases through the facing surface toward the substrate. The shower head includes a central gas supply unit for supplying a first gas through a central portion of the facing surface toward the substrate, a peripheral gas supply unit for supplying a second gas through a peripheral portion of the facing surface toward the substrate and a gas exhaust unit, provided with a plurality of gas exhaust holes formed between the central gas supply unit and the peripheral gas supply unit, for exhausting the first and the second gas from the facing surface.

摘要翻译： 在处理室中设置有用于在其中处理基板的喷头。 此外，淋浴头具有面向安装台的面对表面，用于在其上安装基板，并且用于将一个或多个气体通过面向表面朝向基板供应。 淋浴头包括：中央气体供给单元，用于通过面向表面的中心部朝向基板供给第一气体;周边气体供给单元，其将第二气体通过面向面的周边部朝向基板供给;气体供给单元， 排气单元，设置有形成在中央气体供给单元和周边气体供给单元之间的多个排气孔，用于从相对表面排出第一和第二气体。

公开(公告)号：US08221581B2

公开(公告)日：2012-07-17

申请号：US12127311

申请日：2008-05-27

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23C16/50 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  H01J37/32449

摘要： A processing gas supply hole is constituted with a gas outlet hole formed at an electrode plate and a gas injection hole formed at a processing gas supply mechanism main unit. At the gas injection hole, a processing gas having flowed in on the upstream side is injected toward the gas outlet hole through an injection opening of a nozzle portion disposed on the downstream side, so as to generate a suction force at a suction flow passage formed around the nozzle portion by taking advantage of the ejector defect.

摘要翻译： 处理气体供给孔由形成在电极板处的气体出口孔和形成在处理气体供给机构主体上的气体注入孔构成。 在气体注入孔处，通过设置在下游侧的喷嘴部的喷射口将朝上游侧流入的处理气体朝向气体排出孔喷射，从而在形成的吸入流路上产生吸引力 通过利用喷射器缺陷来围绕喷嘴部分。

公开(公告)号：US20110094995A1

公开(公告)日：2011-04-28

申请号：US12913135

申请日：2010-10-27

申请人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

发明人： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

IPC分类号： C23F1/08 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  C23F1/00

CPC分类号： H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.

摘要翻译： 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

公开(公告)号：US20090266300A1

公开(公告)日：2009-10-29

申请号：US12094485

申请日：2007-03-30

申请人： Hachishiro Iizuka

发明人： Hachishiro Iizuka

IPC分类号： C23C16/54

CPC分类号： H01L21/68757 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/4585 ,  C23C16/46

摘要： A film forming apparatus includes a process chamber 2 configured to accommodate a semiconductor wafer W; a substrate worktable 5 disposed inside the process chamber 2 and configured to place the semiconductor wafer W thereon; a showerhead 40 used as a process gas delivery mechanism disposed to face the worktable 5 and configured to delivery a process gas into the process chamber 2; and an exhaust unit 101 configured to exhaust gas from inside the process chamber 2, wherein the substrate worktable 5 includes a worktable main body 5a and a thermal shield 200 disposed at an area of the worktable main body 5a around an area for placing the semiconductor wafer W thereon, and the thermal shield 200 is configured to decrease thermal diffusion from the worktable main body to the showerhead 40.

摘要翻译： 成膜装置包括：配置成容纳半导体晶片W的处理室2; 设置在处理室2内部并构造成将半导体晶片W放置在其上的基板工作台5; 用作处理气体输送机构的喷头40，其布置成面对工作台5并且构造成将处理气体输送到处理室2中; 以及被配置为从处理室2内部排出气体的排气单元101，其中，基板工作台5包括设置在工作台主体5a的区域周围的工作台主体5a和热屏蔽件200，用于放置半导体晶片 W，并且热屏蔽200被配置为减小从工作台主体到喷头40的热扩散。

公开(公告)号：US07513954B2

公开(公告)日：2009-04-07

申请号：US10484430

申请日：2002-07-24

申请人： Hachishiro Iizuka ,  Taro Ikeda

发明人： Hachishiro Iizuka ,  Taro Ikeda

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01J37/32706

摘要： A plasma processing apparatus includes a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas, a substrate mounting table, installed in the processing container, for mounting the substrate thereon, and a gas supplying unit for supplying the processing gas into the processing container. Here, the substrate mounting table includes a mounting table main body formed of an insulator component. Here, an electrode is embedded inside the mounting table main body, a high frequency power supply for supplying a high frequency power is connected to the electrode, and one or more exposed electrodes are installed to be exposed toward the outside of the mounting table main body and electrically connected to the electrode in the mounting table main body.

摘要翻译： 一种等离子体处理装置包括：处理容器，用于接收待处理的基板，并通过处理气体的等离子体处理基板;安装在处理容器中的基板安装台，用于将基板安装在其上;气体供应单元，用于 将处理气体供应到处理容器中。 这里，基板安装台包括由绝缘体部件形成的安装台主体。 这里，电极嵌入在安装台主体内部，用于提供高频电力的高频电源连接到电极，并且一个或多个暴露的电极被安装成暴露于安装台主体的外部 并且电连接到安装台主体中的电极。