公开(公告)号：US20050208779A1

公开(公告)日：2005-09-22

申请号：US11046662

申请日：2005-01-28

申请人： Hagen Klauk ,  Gunter Schmid ,  Marcus Halik ,  Ute Zschieschang

发明人： Hagen Klauk ,  Gunter Schmid ,  Marcus Halik ,  Ute Zschieschang

IPC分类号： G03F7/00 ,  H01L21/283 ,  H01L21/324 ,  H01L21/4763 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/052 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0019

摘要： An imprint lithography process is used for the production of a semiconductor component. A polymeric gate dielectric layer (12) is structured in the absence of a resist solely by at least one imprint die (20). Before and/or after the structuring by means of the imprint die (20), the polymer layer is cured and/or crosslinked. The curing and/or crosslinking is induced thermally and/or by light.

摘要翻译： 压印光刻工艺用于制造半导体部件。 聚合物栅极介电层（12）仅由至少一个压印模具（20）而不存在抗蚀剂构造。 在通过压印模具（20）构造之前和/或之后，聚合物层被固化和/或交联。 固化和/或交联是热和/或光引发的。

公开(公告)号：US07303940B2

公开(公告)日：2007-12-04

申请号：US11066732

申请日：2005-02-25

申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang

IPC分类号： H01L51/40 ,  H01L21/4763 ,  H01L51/00 ,  H01L23/58

CPC分类号： H01L51/107 ,  H01L51/0545

摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

公开(公告)号：US20050260803A1

公开(公告)日：2005-11-24

申请号：US11134512

申请日：2005-05-23

申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Gunter Schmid

IPC分类号： H01L21/283 ,  H01L21/336 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L29/4908 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0545

摘要： The gate dielectric layer of a thin film field effect transistor is formed as a multilayer layer system having at least one self assembling molecular monolayer (SAM) and a dielectric polymer layer made of an insulating polymer. With comparatively small layer thicknesses of 10 to 50 nanometers, the multilayer gate dielectric layer ensures low leakage currents and enables failsafe operation of the thin film field effect transistor at low supply voltages of less than 5 volts. The gate dielectric layer is robust toward voltages of up to approximately 20 volts and permits the use of a multiplicity of different materials for realizing an underlying electrode.

摘要翻译： 薄膜场效应晶体管的栅介质层形成为具有至少一个自组装分子单层（SAM）和由绝缘聚合物制成的电介质聚合物层的多层系统。 具有10至50纳米的相对较小的层厚度，多层栅极介质层确保低泄漏电流，并且能够在低于5伏特的低电源电压下实现薄膜场效应晶体管的故障安全操作。 栅极电介质层对于高达约20伏特的电压是鲁棒的，并且允许使用多种不同的材料来实现底层电极。

公开(公告)号：US07208782B2

公开(公告)日：2007-04-24

申请号：US11045511

申请日：2005-01-31

申请人： Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

发明人： Hagen Klauk ,  Günter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

IPC分类号： H01L27/148

CPC分类号： H01L51/105 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/0097 ,  H01L51/0545

摘要： A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.

摘要翻译： 半导体器件包括半导体路径，包括有机半导体材料的半导体路径，将电荷载流子注入到半导体路径中的第一接触，从半导体路径提取电荷载流子的第二接触，以及包括配置在第一 接触和半导体路径和/或第二接触和半导体路径之间。 该层中的膦用作电荷转移分子，其使得更容易在接触和有机半导体材料之间转移电荷载流子。 结果，可以显着地降低接触和有机半导体材料之间的接触电阻。

公开(公告)号：US20050196972A1

公开(公告)日：2005-09-08

申请号：US11066732

申请日：2005-02-25

申请人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang

发明人： Florian Eder ,  Marcus Halik ,  Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang

IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L51/30

CPC分类号： H01L51/107 ,  H01L51/0545

摘要： A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

摘要翻译： 半导体部件具有至少一个有机半导体层。 该组件还包括至少一个保护层，用于至少部分地覆盖至少一个有机半导体层以防止环境影响。 至少一个保护层含有一定比例的具有C n H 2n + 1 N的烷烃，n大于或等于15，或完全由这种烷烃组成 ，或这种类型的烷烃的混合物。 在一个实例中，保护层是石蜡。 这产生了很高的耐湿性。

公开(公告)号：US20050167703A1

公开(公告)日：2005-08-04

申请号：US11045511

申请日：2005-01-31

申请人： Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

发明人： Hagen Klauk ,  Gunter Schmid ,  Ute Zschieschang ,  Marcus Halik ,  Efstratios Terzoglu

IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/06

CPC分类号： H01L51/105 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0084 ,  H01L51/0087 ,  H01L51/0097 ,  H01L51/0545

摘要： A semiconductor device includes a semiconductor path, the semiconductor path including an organic semiconductor material, a first contact to inject charge carriers into the semiconductor path, a second contact to extract charge carriers from the semiconductor path, and a layer including phosphine arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The phosphine in the layer acts as a charge transfer molecule which makes it easier to transfer charge carriers between contact and organic semiconductor material. As a result, the contact resistance between contact and organic semiconductor material can be reduced considerably.

摘要翻译： 半导体器件包括半导体路径，包括有机半导体材料的半导体路径，将电荷载流子注入到半导体路径中的第一接触，从半导体路径提取电荷载流子的第二接触，以及包括配置在第一 接触和半导体路径和/或第二接触和半导体路径之间。 该层中的膦用作电荷转移分子，其使得更容易在接触和有机半导体材料之间转移电荷载流子。 结果，可以显着地降低接触和有机半导体材料之间的接触电阻。

公开(公告)号：US20050133375A1

公开(公告)日：2005-06-23

申请号：US11017793

申请日：2004-12-22

申请人： Gunter Schmid ,  Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Werner Weber ,  Andreas Mueller-Hipper

发明人： Gunter Schmid ,  Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Werner Weber ,  Andreas Mueller-Hipper

IPC分类号： C25D1/04 ,  C25D5/02 ,  C25D17/12

CPC分类号： G06K19/07779 ,  C25D1/003 ,  C25D1/04 ,  C25D5/022 ,  C25D17/12 ,  G06K19/07783

摘要： A method is described for producing a structured metal layer used, for example, as an antenna for RF ID tags. The structured metal layer is electrodeposited on a cathode, on the surface of which conducting and non-conducting regions are defined. Applied to the deposited metal layer in a residual volume is an adhesive with which the structured metal layer can be made to adhere firmly on a carrier layer.

摘要翻译： 描述了用于制造用于例如RF ID标签的天线的结构化金属层的方法。 结构化金属层电沉积在阴极上，其表面上限定了导电和非导电区域。 以残留体积施加到沉积的金属层上的是粘结剂，结构化金属层可以通过该粘合剂牢固地粘附在载体层上。

公开(公告)号：US07455795B2

公开(公告)日：2008-11-25

申请号：US11023368

申请日：2004-12-29

申请人： Guenter Schmid ,  Peter Baeuerle ,  Elena Mean-Osteritz ,  Marcus Halik ,  Hagen Klauk

发明人： Guenter Schmid ,  Peter Baeuerle ,  Elena Mean-Osteritz ,  Marcus Halik ,  Hagen Klauk

IPC分类号： H01L35/24 ,  H01B1/12 ,  G11C11/00 ,  G06F12/08

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  C07D333/06 ,  C07D409/14 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0016 ,  G11C13/025 ,  G11C2213/15 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0046 ,  H01L51/0078

摘要： Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.

摘要翻译： 描述了用于制造尺寸在纳米范围内并且包括位于两个电极之间的CT复合体的记忆单元的材料。 CT复合物包括噻吩衍生物，吡咯衍生物或酞菁与萘四羧酸，二酐，二酰胺，富勒烯或苝化合物。

公开(公告)号：US20050198462A1

公开(公告)日：2005-09-08

申请号：US11023368

申请日：2004-12-29

申请人： Guenter Schmid ,  Peter Baeuerle ,  Elena Mena-Osteritz ,  Marcus Halik ,  Hagen Klauk

发明人： Guenter Schmid ,  Peter Baeuerle ,  Elena Mena-Osteritz ,  Marcus Halik ,  Hagen Klauk

IPC分类号： C07D409/14 ,  C07D495/22 ,  G06F12/02 ,  G11C11/56 ,  G11C13/02 ,  H01L27/28 ,  H01L51/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  C07D333/06 ,  C07D409/14 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0016 ,  G11C13/025 ,  G11C2213/15 ,  H01L27/285 ,  H01L51/0036 ,  H01L51/0046 ,  H01L51/0078

摘要： Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.

摘要翻译： 描述了用于制造尺寸在纳米范围内并且包括位于两个电极之间的CT复合体的记忆单元的材料。 CT复合物包括噻吩衍生物，吡咯衍生物或酞菁与萘四羧酸，二酐，二酰胺，富勒烯或苝化合物。

公开(公告)号：US07247735B2

公开(公告)日：2007-07-24

申请号：US11041632

申请日：2005-01-24

申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid

发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid

IPC分类号： C07D409/04 ,  C07D409/10 ,  C07D409/14 ,  C07D407/04 ,  C07D407/10 ,  H01L51/00 ,  H01L35/24 ,  C07D407/14 ,  C07D403/04 ,  C07D403/10 ,  C07D403/14 ,  C07D401/04 ,  C07D401/10 ,  C07D401/14

CPC分类号： H01L51/0068 ,  C07D333/18 ,  C07D409/14 ,  H01L51/0067 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545

摘要： In the case of the materials according to the invention, the charge carrier mobility in the correspondingly prepared films is achieved if the molecules are composed in such a way that side chains—consisting of conjugated aromatic or heteroaromatic systems—are attached in direct conjugation to a central aromatic or heteroaromatic ring so that the total molecule acquires an octupolar structure. This octupolar structure permits an effective π-π interaction of the molecules with one another in a manner such that stacking of a plurality of molecules along an imaginary axis (central ring) can take place and various stacks from among these stacks can interact with one another by intermeshing of the side chains. The electronic properties of the materials are determined both by the arrangement of the molecules in a layer and by the molecular design. The type of side chains and of the central ring which is electronically coupled to the side chains and ideally reinforces the effects in comparison with side chains considered in isolation is important for this purpose.

摘要翻译： 在根据本发明的材料的情况下，如果分子以使得由共轭芳族或杂芳族体系组成的侧链与直接共轭连接的方式组成的方式实现相应制备的膜中的载流子迁移率 中心芳族或杂芳族环，使得总分子获得八极结构。 这种八极结构允许分子彼此有效的pi-pi相互作用，使得沿着假想轴（中心环）堆叠多个分子可以发生，并且这些堆中的各种叠层可以彼此相互作用 通过侧链的相互啮合。 材料的电子性质通过层中分子的排列和分子设计来确定。 电子耦合到侧链的侧链和中心环的类型和理想地加强与隔离考虑的侧链相比的效果对于此目的是重要的。