Compositions of neutral layer for directed self assembly block copolymers and processes thereof
    34.
    发明授权
    Compositions of neutral layer for directed self assembly block copolymers and processes thereof 有权
    用于定向自组装嵌段共聚物的中性层组合物及其工艺

    公开(公告)号:US08691925B2

    公开(公告)日:2014-04-08

    申请号:US13243640

    申请日:2011-09-23

    IPC分类号: C08F118/02 G03F7/20 C08L33/12

    摘要: The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.

    摘要翻译: 本发明涉及新型中性层组合物和使用该组合物的方法。 中性层组合物包含至少一种具有至少一个结构单元(1),至少一个结构单元(2)和至少一个结构单元(3)的无规共聚物,其中R1选自 C 1 -C 8烷基,C 1 -C 8氟烷基部分,C 1 -C 8部分氟化烷基,C 4 -C 8环烷基,C 4 -C 8环氟烷基,C 4 -C 8部分氟化环烷基和C 2 -C 8羟烷基; R2,R3和R5独立地选自H,C1-C4烷基,CF3和F; R 4选自H,C 1 -C 8烷基,C 1 -C 8部分氟化烷基和C 1 -C 8氟代烷基,n为1至5,R 6选自H,F,C 1 -C 8烷基 和C 1 -C 8氟烷基,m为1至3。

    Antireflective compositions for photoresists
    37.
    发明授权
    Antireflective compositions for photoresists 有权
    用于光致抗蚀剂的抗反射组合物

    公开(公告)号:US07264913B2

    公开(公告)日:2007-09-04

    申请号:US10301462

    申请日:2002-11-21

    摘要: The present invention relates to a novel antireflective coating composition comprising a polymer, a crosslinking agent and an acid generator. The present invention further relates to a process for using the novel composition, particularly at 193 nm. The polymer of the present invention contains at least one unit selected from structures 1, 2 and 3, where, Y is a hydrocarbyl linking group of 1 to about 10 carbon atoms, R, R1, R′ and R″ are independently hydrogen, hydrocarbyl group of 1 to about 10 carbon atoms, halogen, —O(CO)Z, —C(CF3)2Z, —C(CF3)2(CO)OZ, —SO2CF3, —(CO)OZ, —SO3Z, —COZ, —OZ, —NZ2, —SZ, —SO2Z, —NHCOZ, —NZCOZ or —SO2NZ2, where Z is H or a hydrocarbyl group of 1 to about 10 carbon atoms, n=1–4, X is O, CO, S, COO, CH2O, CH2COO, SO2, NH, NL, OWO, OW, W, and where L and W are independently hydrocarbyl groups of 1 to about 10 carbon atoms, and m=0–3.

    摘要翻译: 本发明涉及包含聚合物,交联剂和酸发生剂的新型抗反射涂料组合物。 本发明还涉及使用该组合物的方法,特别是在193nm。 本发明的聚合物含有至少一种选自结构1,2和3的单元,其中Y是1至约10个碳原子的烃基连接基团,R 1,R 1,R' 和R“独立地为氢,1至约10个碳原子的烃基,卤素,-O(CO)Z,-C(CF 3)2 Z, -C(CF 3)2(CO)OZ,-SO 2 CF 3 - , - (CO) OZ,-SO 3 Z,-COZ,-OZ,-NZ 2,-SZ,-SO 2 Z,-NHCOZ, - NZCOZ或-SO 2 NZ 2,其中Z为H或1至约10个碳原子的烃基,n = 1-4,X为O,CO, S,COO,CH 2 O,CH 2 COO,SO 2,NH,NL,OWO,OW,W,其中L和 W独立地为1至约10个碳原子的烃基,并且m = 0-3。

    Antireflective compositions for photoresists
    39.
    发明申请
    Antireflective compositions for photoresists 审中-公开
    用于光致抗蚀剂的抗反射组合物

    公开(公告)号:US20060057501A1

    公开(公告)日:2006-03-16

    申请号:US10941221

    申请日:2004-09-15

    IPC分类号: G03C5/00

    CPC分类号: G03F7/091

    摘要: The present invention relates to a coating solution comprising a polymer obtained by reacting a glycoluril compound with a reactive compound containing hydroxy groups and/or acid groups, and further where the polymer is soluble in an organic solvent. The invention also relates to a process for imaging a photoresist coated over such a coating composition and to a polymer for the coating composition.

    摘要翻译: 本发明涉及一种包含通过使甘脲化合物与含有羟基和/或酸基的反应性化合物反应而得到的聚合物的涂层溶液,此外聚合物可溶于有机溶剂中。 本发明还涉及一种用于对涂覆在这种涂料组合物上的光致抗蚀剂和用于涂料组合物的聚合物进行成像的方法。