摘要:
The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.
摘要:
The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.
摘要:
The present invention relates to novel processes for using the neutral layer compositions for aligning microdomains of directed self-assembling block copolymers (BCP). The processes are useful for fabrication of electronic devices. The novel processes comprise a step of forming a coating of the neutral layer from the neutral layer composition, wherein the neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.
摘要:
The present invention relates to a novel polymeric composition comprising a novel polymer having two or more repeat units and a terminus having the structure (1): wherein R1 represents a C1-C20 substituted or unsubstituted alkyl group, w is a number from 1-8, X is oxygen (O) or nitrogen (N), and Rd is a reactive group. The invention also relates to a process for forming a pattern using the novel polymeric composition. The invention further relates to a process of making the novel polymer.
摘要:
The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where R1 to R5 are independently chosen from the group consisting of H and C1-C6 alkyl; R6 is chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C1-C8) and fluoroalkyl (C1-C8) and W is a C2-C6 alkylene spacer.
摘要:
The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where R1 is selected from the group consisting of a C1-C8 alkyl, C1-C8 fluoroalkyl moiety, C1-C8 partially fluorinated alkyl, C4-C8 cycloalkyl, C4-C8 cyclofluoroalkyl, C4-C8 partially fluorinated cycloalkyl, and a C2-C8 hydroxyalkyl; R2, R3 and R5 are independently selected from a group consisting of H, C1-C4 alkyl, CF3 and F; R4 is selected from the group consisting of H, C1-C8 alkyl, C1-C8 partially fluorinated alkyl and C1-C8 fluoroalkyl, n ranges from 1 to 5, R6 is selected from the group consisting of H, F, C1-C8 alkyl and a C1-C8 fluoroalkyl and m ranges from 1 to 3.
摘要:
The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.
摘要:
The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.
摘要:
The invention relates to an antireflective coating composition for a photoresist layer comprising a polymer, a crosslinking agent and an acid generator, where the polymer comprises at least one unit of structure 1, where, A is a nonaromatic linking moiety, R′ and R″ are independently selected from hydrogen, Z and W—OH, where Z is a (C1-C20) hydrocarbyl moiety and W is a (C1-C20) hydrocarbyl linking moiety, and, Y′ is independently a (C1-C20) hydrocarbyl linking moiety. The invention further relates to a process for imaging the antireflective coating composition.
摘要:
Disclosed herein is a formulation for depositing a cured underlayer for promoting the formation of self assembled structures. The underlayer comprises: (a) a polymer comprising at least one pendant vinyl ether monomer repeat unit having the structure, (I): wherein R is chosen from H, C1-C4 alkyl, or halogen, and W is a divalent group chosen from C1-C6 alkylene, C6-C20 arylene, benzylene, or C2-C20 alkyleneoxyalkylene; (ii) optional thermal acid generator; and (c) a solvent. The invention also relates to processes of forming a pattern using the underlayer.