公开(公告)号：US20070068029A1

公开(公告)日：2007-03-29

申请号：US11437868

申请日：2006-05-22

申请人： Dae Kwon ,  Hyun Kim ,  Bo Kim ,  Hye Park ,  Seong Lee

发明人： Dae Kwon ,  Hyun Kim ,  Bo Kim ,  Hye Park ,  Seong Lee

IPC分类号： F26B19/00 ,  H02H3/00 ,  A47F3/00 ,  F25D11/04

CPC分类号： D06F39/005

摘要： The invention of a control panel of a laundry processing machine not only allows control substrate's space efficiency to be increased, by having a LED supporter that possesses control transfer section which has the ability to transfer control commands through buttons, but also has the advantage of allowing the control panels to be smaller and that allows more diverse designs to be materialized.

摘要翻译： 洗衣加工机的控制面板的发明不仅能够通过具有能够通过按钮传送控制命令的控制传递部的LED支撑体来增加控制基板的空间效率，而且还具有允许 控制面板更小，并允许实现更多样化的设计。

公开(公告)号：US20060289533A1

公开(公告)日：2006-12-28

申请号：US11412097

申请日：2006-04-27

申请人： Hye Park ,  Bo Kim ,  Dae Kwon ,  Hyun Kim ,  Seong Lee ,  Myoung Kim

发明人： Hye Park ,  Bo Kim ,  Dae Kwon ,  Hyun Kim ,  Seong Lee ,  Myoung Kim

IPC分类号： H05B6/64

CPC分类号： D06F58/04 ,  D06F39/12

摘要： A laundry dryer is provided. The laundry dryer includes a cabinet, a drying drum, a heating unit and a blower fan, a cabinet cover, an outer cover, and a fringe frame. The cabinet is opened at a side thereof. The drying drum is disposed within the cabinet, to insert articles to be dried. The heating unit and a blower fan supply hot air into the drying drum. The cabinet cover is installed on the cabinet. The outer cover is detachably coupled to a front of the cabinet cover, painted with a predetermined color on at least a front surface thereof, and injection molded from a heat resistant plastic. The fringe frame encloses a front edge portion of the cabinet.

摘要翻译： 提供洗衣机。 衣物烘干机包括机壳，干燥滚筒，加热单元和鼓风机，机壳盖，外盖和边框。 机柜在其一侧打开。 干燥滚筒设置在机柜内，以插入待干燥的物品。 加热单元和鼓风机将干燥鼓中的热空气送入干燥鼓。 机柜盖安装在机柜上。 外盖可拆卸地联接到机柜盖的前部，在其至少前表面上以预定颜色涂漆，并由耐热塑料注射成型。 边缘框架包围机柜的前边缘部分。

公开(公告)号：US20060215865A1

公开(公告)日：2006-09-28

申请号：US11261618

申请日：2005-10-31

申请人： Lai Kang ,  Seong Lee

发明人： Lai Kang ,  Seong Lee

IPC分类号： H04R9/06

CPC分类号： H04R1/288 ,  H04R1/028 ,  H04R2499/11 ,  H04R2499/15

摘要： Embodiments of a portable computer, a woofer speaker mounting structure for a portable computer and methods thereof can reduce transmission of vibrations from speaker to remaining portions of the portable computers. A woofer speaker mounting structure for a portable computer can include a case, a woofer speaker for producing bass sound positioned on the case and formed with support pieces, dampers for absorbing vibration from the woofer speaker can fit into the support pieces and can be coupled to the case. The damper can include a damper body made of an elastic material and through which a central hole is bored and shock-absorbing portions. Due to the structural and material properties of the damper, vibrations are also absorbed. Therefore, the operational characteristics of a portable computer are improved.

摘要翻译： 便携式计算机，用于便携式计算机的低音扬声器安装结构及其方法的实施例可以减少扬声器到便携式计算机的剩余部分的振动传输。 用于便携式计算机的低音扬声器安装结构可以包括壳体，用于产生位于壳体上并形成有支撑件的低音声音的低音喇叭扬声器，用于吸收来自低音扬声器扬声器的振动的阻尼器可以装配到支撑件中，并且可以耦合到 案子。 阻尼器可以包括由弹性材料制成的阻尼体，中心孔穿过该阻尼体和减震部分。 由于阻尼器的结构和材料特性，振动也被吸收。 因此，提高了便携式计算机的操作特性。

公开(公告)号：US20060131648A1

公开(公告)日：2006-06-22

申请号：US11137396

申请日：2005-05-26

申请人： Chang Ahn ,  Wonju Cho ,  Kiju Im ,  Jong Yang ,  In Baek ,  Seong Lee ,  Sung Baek

发明人： Chang Ahn ,  Wonju Cho ,  Kiju Im ,  Jong Yang ,  In Baek ,  Seong Lee ,  Sung Baek

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  H01L29/66636 ,  H01L29/78618

摘要： There are provided an ultra thin film silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) having a recessed source/drain structure, and a method of fabricating the same. The ultra thin film SOI MOS transistor includes a semiconductor substrate; a buried insulating layer disposed on the semiconductor substrate, and formed recessed except for a center portion thereof; an ultra thin film single crystalline silicon layer pattern disposed on the recessed buried insulating layer; a gate stack disposed on the ultra thin film single crystalline silicon layer pattern, and including a gate insulating layer pattern and a gate conductive layer pattern, which are sequentially stacked; a gate spacer layer disposed on sidewalls of the gate stack; and a recessed source/drain region disposed on the recessed buried insulating layer, and formed to overlap a bottom surface portion of the ultra thin film single crystalline silicon layer pattern, which does not overlap the center portion of the recessed buried insulating layer.

摘要翻译： 提供了具有凹陷的源极/漏极结构的超薄膜绝缘体上硅（SOI）金属氧化物半导体场效应晶体管（MOSFET）及其制造方法。 超薄膜SOI MOS晶体管包括半导体衬底; 掩埋绝缘层，设置在所述半导体衬底上，除了其中心部分外形成凹陷; 设置在凹入的掩埋绝缘层上的超薄膜单晶硅层图案; 设置在超薄膜单晶硅层图案上的栅堆叠，并且包括依次层叠的栅极绝缘层图案和栅极导电层图案; 设置在所述栅极堆叠的侧壁上的栅极间隔层; 以及凹陷的源极/漏极区，设置在所述凹入的掩埋绝缘层上，并且形成为与所述超薄膜单晶硅层图案的底表面部分重叠，所述底表面部分不与所述凹入的绝缘层的中心部分重叠。

公开(公告)号：US20060131621A1

公开(公告)日：2006-06-22

申请号：US11187654

申请日：2005-07-22

申请人： Jae Shin ,  Moon Jang ,  Yark Kim ,  Seong Lee

发明人： Jae Shin ,  Moon Jang ,  Yark Kim ,  Seong Lee

IPC分类号： H01L31/112

CPC分类号： H01L29/7839 ,  G11C11/56

摘要： A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both sides of the channel region and formed of material including metal layer; and a gate formed on the channel region, with a gate dielectric layer interposed therebetween. Positive (+), 0 or negative (−) gate voltage is selectively applied to the gate, the channel becomes off-state when the gate voltage between a negative threshold voltage and a positive threshold voltage is applied, and the channel becomes a first on-state and a second on-state when the gate voltage is lower than the negative threshold voltage or higher than the positive threshold voltage. Accordingly, it is possible to implement three current states, that is, hole current, electron current, and no current. The SB-MOSFET can be applied to a multi-bit memory and/or multi-bit logic device.

摘要翻译： 提供了使用SB-MOSFET的双极运输的装置及其操作方法。 SB-MOSFET包括：硅沟道区; 源极和漏极在沟道区域的两侧接触并由包括金属层的材料形成; 以及形成在沟道区上的栅极，介于其间的栅介质层。 正极（+），0或负（ - ）栅极电压选择性地施加到栅极，当施加负阈值电压和正阈值电压之间的栅极电压时，通道变为截止状态，并且通道变为第一个 当门电压低于负阈值电压或高于正阈值电压时，状态和第二导通状态。 因此，可以实现三种电流状态，即空穴电流，电子电流，无电流。 SB-MOSFET可以应用于多位存储器和/或多位逻辑器件。

公开(公告)号：US20060118899A1

公开(公告)日：2006-06-08

申请号：US11196180

申请日：2005-08-03

申请人： Moon Jang ,  Yark Kim ,  Jae Shin ,  Seong Lee

发明人： Moon Jang ,  Yark Kim ,  Jae Shin ,  Seong Lee

IPC分类号： H01L31/07

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  H01L29/872

摘要： Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not require a conventional PADOX process to form a quantum dot for a single electron transistor (SET), height and width of a tunneling barrier can be artificially adjusted by using silicide materials that have various Schottky junction barriers, and it is possible to improve current driving capability of the single electron transistor (SET).

公开(公告)号：US20060117660A1

公开(公告)日：2006-06-08

申请号：US11296061

申请日：2005-12-06

申请人： Tae Woo ,  Young Yoon ,  Seong Lee ,  Il Kim ,  Keun Choi

发明人： Tae Woo ,  Young Yoon ,  Seong Lee ,  Il Kim ,  Keun Choi

IPC分类号： B01J7/00

CPC分类号： B01J8/0465 ,  B01J8/0496 ,  B01J19/249 ,  B01J2208/00309 ,  B01J2208/00495 ,  B01J2208/00504 ,  B01J2208/00513 ,  B01J2208/0053 ,  B01J2219/00155 ,  B01J2219/2454 ,  B01J2219/2465 ,  B01J2219/2466 ,  B01J2219/2481 ,  B01J2219/2485 ,  C01B3/384 ,  C01B3/48 ,  C01B3/583 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/0816 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1288 ,  C01B2203/142 ,  C01B2203/82 ,  Y02P20/124 ,  Y02P20/129

摘要： A small cylindrical reformer according to the embodiments of the present invention are suitable for use in the production of hydrogen from fossil fuels for a small fuel cell power plant. In the small cylindrical reformer, a reforming reactor, a water gas shift reactor (high temperature or low temperature), a combustor, a heat exchanger, a steam generator, etc., may be integrated in a single container to form an optimal heat exchanging network, minimize heat loss and optimize heat exchange efficiency. Thereby, the reformer is designed to be easily processed and manufactured and to have a compact size, thus realizing high efficiency, light weight and ease of mass production.

公开(公告)号：US20060091408A1

公开(公告)日：2006-05-04

申请号：US11204226

申请日：2005-08-16

申请人： Min Kim ,  Masayoshi Koike ,  Kyeong Min ,  Seong Lee ,  Sung Jang

发明人： Min Kim ,  Masayoshi Koike ,  Kyeong Min ,  Seong Lee ,  Sung Jang

IPC分类号： H01L29/22

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

摘要翻译： 公开了一种氮化物基半导体器件及其制备方法，其包括在硅树脂基底上形成的高质量GaN层。 根据本发明的氮化物基半导体器件包括沿着垂直方向对准和形成在硅基底上的多个纳米棒; 填充纳米棒之间的空间的非晶基质层，以便突出所述纳米棒的一些上部; 以及形成在基体层上的GaN层。

公开(公告)号：US20050142380A1

公开(公告)日：2005-06-30

申请号：US11011582

申请日：2004-12-15

申请人： Byung Chin ,  Min Suh ,  Mu Kim ,  Seong Lee ,  Jang Kwon

发明人： Byung Chin ,  Min Suh ,  Mu Kim ,  Seong Lee ,  Jang Kwon

IPC分类号： H01L51/50 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H05B33/14 ,  B32B9/00 ,  H05B33/10

CPC分类号： C09K11/06 ,  C09K2211/10 ,  C09K2211/1003 ,  C09K2211/1018 ,  C09K2211/14 ,  C09K2211/1408 ,  C09K2211/1441 ,  H01L51/0013 ,  H01L51/0037 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

摘要： An organic EL device in which light-emitting efficiency, color purity and laser induced thermal imaging characteristics are improved by providing with an organic EL device comprising a first electrode, a hole transport layer, a light-emitting layer, and a second electrode, wherein the light-emitting layer uses a mixture of an optically active low molecular electric charge transport material and a high molecular light-emitting substance.

公开(公告)号：US20050141390A1

公开(公告)日：2005-06-30

申请号：US11027522

申请日：2004-12-29

申请人： Seong Lee ,  In Choi ,  Gin Kim ,  Kwan Park

发明人： Seong Lee ,  In Choi ,  Gin Kim ,  Kwan Park

IPC分类号： G11B7/085 ,  G11B7/09 ,  G11B7/135 ,  G11B7/00

CPC分类号： G11B7/1378 ,  G11B7/0925 ,  G11B7/13927

摘要： A spherical aberration compensation actuator and an optical pickup system are provided. The spherical aberration compensation actuator mounts an element for compensating a spherical aberration and operates to a single-axis direction on an optical path using electromagnetic force. The optical pickup system includes a laser diode, an object lens, a spherical aberration compensation actuator, an optical path changer, and an optical detector. The spherical aberration compensation actuator is installed on an optical path between the laser diode and the object lens and includes a lens holder having a spherical aberration compensation element for compensating a spherical aberration generated due to light passing through the object lens and operating in an optical-axis direction using electromagnetic force.

摘要翻译： 提供球面像差补偿致动器和光拾取系统。 球面像差补偿致动器安装用于补偿球面像差的元件，并且使用电磁力在光路上对单轴方向进行操作。 光学拾取系统包括激光二极管，物镜，球面像差补偿致动器，光路改变器和光学检测器。 球面像差补偿致动器安装在激光二极管和物镜之间的光路上，并且包括具有球面像差补偿元件的透镜保持器，用于补偿由于通过物镜的光而产生的球面像差， 轴方向使用电磁力。