利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

181 条记录 (耗时 0.033 秒)

    MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER
    31.
    发明申请
    MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER 审中-公开
    磁阻效应器件和磁记录器

    公开(公告)号：US20120229936A1

    公开(公告)日：2012-09-13

    申请号：US13481317

    申请日：2012-05-25

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3906 ,  G11B5/398 ,  G11B5/3983 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure.

    摘要翻译： 根据一个实施例，磁阻效应器件包括：具有盖层的多层结构; 磁化钉扎层; 设置在所述盖层和所述磁化固定层之间的无磁化层; 设置在磁化固定层和无磁化层之间的间隔层; 设置在磁化被钉扎层，磁化被钉扎层和间隔层之间，在间隔层和无磁化层之间，在磁化自由层中，或在磁化自由层和盖层之间的功能层， 具有含有选自Zn，In，Sn和Cd中的至少一种元素的氧化物的功能层和选自Fe，Co和Ni中的至少一种元素; 以及用于垂直于多层结构的膜平面施加电流的一对电极。

    Magnetoresistive element and method of manufacturing the same
    33.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08184408B2

    公开(公告)日：2012-05-22

    申请号：US12320668

    申请日：2009-01-30

    申请人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Shuichi Murakami ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.

    摘要翻译： 磁阻元件包括磁阻膜，其包括磁化被钉扎层，磁化自由层，布置在磁化钉扎层和磁化自由层之间的中间层，布置在磁化钉扎层或磁化自由层上的盖层，以及 由含氧或含氮材料形成并布置在磁化固定层中或在无磁化层中的功能层和一对电极，其垂直于磁阻膜的平面通过电流，其中晶体 功能层的取向平面不同于其上部或下部相邻层的结晶取向平面。

    STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR
    34.
    发明申请
    STRAIN SENSOR ELEMENT AND BLOOD PRESSURE SENSOR 有权
    应变传感器元件和血压传感器

    公开(公告)号：US20120079887A1

    公开(公告)日：2012-04-05

    申请号：US13110392

    申请日：2011-05-18

    申请人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    发明人： Alexander Devin Giddings ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami

    IPC分类号： G01B7/16

    CPC分类号： A61B5/021 ,  A61B5/02108 ,  G01B7/24 ,  G01L1/125

    摘要： A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.

    摘要翻译： 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。

    Magnetic multilayered film current element
    35.
    发明授权
    Magnetic multilayered film current element 有权
    磁性多层膜电流元件

    公开(公告)号：US08111488B2

    公开(公告)日：2012-02-07

    申请号：US12155924

    申请日：2008-06-11

    申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G01S7/032 ,  G01S13/34 ,  G01S2013/936 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/66 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.

    摘要翻译： 磁性多层膜电流元件包括：至少一个磁性层; 至少一个膜结构，其包含形成第一开口的第一绝缘层，形成第二开口的第二绝缘层和设置在第一绝缘层和第二绝缘层之间的导体，在距离“A” 在第一绝缘层和第二绝缘层的位于第二开口的位置处的第一绝缘层和第二绝缘层的一部分之间的距离设定为大于第一绝缘层和第二绝缘层之间的最近距离“B” 以及一对电极，用于沿着磁性多层膜的堆叠方向将电流流向含有至少一个磁性层和至少一个膜结构的磁性多层膜。

    Method of manufacturing a magneto-resistance effect element
    40.
    发明授权
    Method of manufacturing a magneto-resistance effect element 失效
    制造磁阻效应元件的方法

    公开(公告)号：US08671554B2

    公开(公告)日：2014-03-18

    申请号：US13419198

    申请日：2012-03-13

    申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

    IPC分类号： G11B5/17 ,  H04R31/00

    CPC分类号： B25G1/102

    摘要： An example method for manufacturing a magneto-resistance effect element having a magnetic layer, a free magnetization layer, and a spacer layer includes forming a first metallic layer and forming, on the first metallic layer, a second metallic layer. A first conversion treatment is performed to convert the second metallic layer into a first insulating layer and to form a first metallic portion penetrating through the first insulating layer. A third metallic layer is formed on the first insulating layer and the first metallic portion. A second conversion treatment is performed to convert the third metallic layer into a second insulating layer and to form a second metallic portion penetrating through the second insulating layer.

    摘要翻译： 用于制造具有磁性层，自由磁化层和间隔层的磁阻效应元件的示例性方法包括形成第一金属层，并在第一金属层上形成第二金属层。 执行第一转换处理以将第二金属层转换成第一绝缘层并形成贯穿第一绝缘层的第一金属部分。 在第一绝缘层和第一金属部分上形成第三金属层。 执行第二转换处理以将第三金属层转换成第二绝缘层并形成贯穿第二绝缘层的第二金属部分。