公开(公告)号：US5723386A

公开(公告)日：1998-03-03

申请号：US674907

申请日：1996-07-03

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/517 ,  H01J37/32 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L21/00

CPC分类号： C23C16/45523 ,  C23C16/402 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32192 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31608 ,  H01L21/76837

摘要： In a method of manufacturing a semiconductor device having a multilayer interconnection structure, when a silicon oxide film is formed onto an electric wiring on a semiconductor substrate by the use of plasma deposition, a first high frequency wave of a constant value is provided for producing plasma while a second high frequency wave of a pulsed amplitude having a predetermined pulse interval and a predetermined rest interval is supplied onto said semiconductor substrate. Silane gas, oxygen gas and argon gas are employed as deposition gases, wherein the argon gas is periodically supplied during a pulsed interval.

摘要翻译： 在制造具有多层互连结构的半导体器件的方法中，当通过使用等离子体沉积在氧化硅膜形成在半导体衬底上的电布线上时，提供恒定值的第一高频波来产生等离子体 而具有预定脉冲间隔和预定休止间隔的具有脉冲幅度的第二高频波被提供到所述半导体衬底上。 采用硅烷气体，氧气和氩气作为沉积气体，其中在脉冲间隔期间周期性地供给氩气。

公开(公告)号：US08809207B2

公开(公告)日：2014-08-19

申请号：US14000643

申请日：2012-02-20

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/00

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719

摘要： A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

摘要翻译： 当在基板上刻蚀膜时，用于形成用作掩模的预定图案的图案形成方法包括以下步骤：在待处理的膜上形成有机膜图案的有机膜图案形成步骤; 在有机膜图案上形成氮化硅膜; 蚀刻氮化硅膜，使得氮化硅膜仅保留在有机膜图案的侧壁部分上; 除去有机膜，从而在基板上形成预定的氮化硅膜图案。 在基板的温度保持不超过100℃的条件下，成膜步骤激发处理气体并产生等离子体，用等离子体进行等离子体处理，形成压力不超过100的氮化硅膜 MPa。

公开(公告)号：US08377818B2

公开(公告)日：2013-02-19

申请号：US12308828

申请日：2007-07-04

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L21/4763 ,  H01L21/302

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/56 ,  H01L21/3105

摘要： The present invention is an aftertreatment method further applied to an amorphous carbon film to which a treatment including heating is performed after the film has been formed on a substrate. The treatment of preventing oxidation of the amorphous carbon film is performed immediately after the treatment including heating.

摘要翻译： 本发明是进一步应用于在基板上形成膜之后进行包括加热处理的无定形碳膜的后处理方法。 在包括加热的处理之后立即进行防止非晶碳膜氧化的处理。

公开(公告)号：US20120156884A1

公开(公告)日：2012-06-21

申请号：US13407882

申请日：2012-02-29

申请人： Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L21/302 ,  H01L21/30

CPC分类号： C23C16/26 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： Disclosed is a film forming method of an amorphous carbon film, including: disposing a substrate in a processing chamber; supplying a processing gas containing carbon, hydrogen and oxygen into the processing chamber; and decomposing the processing gas by heating the substrate in the processing chamber and depositing the amorphous carbon film on the substrate.

摘要翻译： 公开了一种无定形碳膜的成膜方法，包括：将基板设置在处理室中; 将含有碳，氢和氧的处理气体供应到所述处理室中; 并且通过加热处理室中的衬底并将非晶碳膜沉积在衬底上来分解处理气体。

公开(公告)号：US08017519B2

公开(公告)日：2011-09-13

申请号：US12521397

申请日：2007-12-26

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L21/44

CPC分类号： H01L21/3146 ,  H01L21/02074 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device including: a substrate; a wiring layer formed on the substrate and made of copper or a copper alloy; a copper diffusion barrier film formed on the wiring layer and made of an amorphous carbon film formed by CVD using a processing gas containing a hydrocarbon gas; and a low-k insulating film formed on the copper diffusion barrier film.

摘要翻译： 公开了一种半导体器件，包括：衬底; 形成在基板上并由铜或铜合金制成的布线层; 形成在布线层上并由使用含有烃气体的处理气体通过CVD形成的无定形碳膜制成的铜扩散阻挡膜; 以及形成在铜扩散阻挡膜上的低k绝缘膜。

公开(公告)号：US20090011602A1

公开(公告)日：2009-01-08

申请号：US12280413

申请日：2007-02-23

申请人： Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L21/311

CPC分类号： C23C16/26 ,  H01L21/02115 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3146

摘要： Disclosed is a film forming method of an amorphous carbon film, including: disposing a substrate in a processing chamber; supplying a processing gas containing carbon, hydrogen and oxygen into the processing chamber; and decomposing the processing gas by heating the substrate in the processing chamber and depositing the amorphous carbon film on the substrate.

摘要翻译： 公开了一种无定形碳膜的成膜方法，包括：将基板设置在处理室中; 将含有碳，氢和氧的处理气体供应到所述处理室中; 并且通过加热处理室中的衬底并将非晶碳膜沉积在衬底上来分解处理气体。

公开(公告)号：US06716725B1

公开(公告)日：2004-04-06

申请号：US09387771

申请日：1999-09-01

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L2120

CPC分类号： H01L21/02131 ,  C23C8/02 ,  C23C8/36 ,  C23C16/401 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/31604 ,  H01L21/31625 ,  H01L21/31629

摘要： A wafer W is placed on a lower electrode 108 provided inside a processing chamber 102 of a CVD apparatus 100 and is heated to achieve a temperature equal to or greater than 350° C. and lower than 450° C. SiH4 and SiF4 with both their flow rates set at 20 sccm, B2H6 with its flow rate set at 7 sccm, O2 with its flow rate set at 200 sccm and Ar with its flow rate set at 400 sccm are introduced into the processing chamber 102, and a pressure within the range of 0.01 Torr˜10 Torr is set. 20 W/cm2 power at a frequency of 27.12 MHz and 10 W/cm2 power at a frequency of 400 kHz are respectively applied to an upper electrode 116 and the lower electrode 108 to generate plasma, and a layer insulating film 204 constituted of an SiOB film containing F is formed on the wafer W. With the B atoms incorporated into the molecular skeleton in the network structure of the SiOB film and the F atoms lowering the hygroscopicity by preventing formation of Si—OH bonds and the like, a dielectric constant of approximately 3.0 is achieved.

摘要翻译： 将晶片W放置在设置在CVD装置100的处理室102内部的下电极108上，并加热以达到350℃以上且低于450℃的SiH 4和SiF 4， 流量设定在20sccm，B2H6，其流量设定为7sccm，O2，其流量设定在200sccm，Ar的流量设定为400sccm被引入到处理室102中，压力在该范围内 设定为0.01 Torr〜10 Torr。 分别在上电极116和下电极108上施加频率为27.12MHz，频率为400kHz的10W / cm 2功率的20W / cm 2功率，产生等离子体层 在晶片W上形成由包含F的SiOB膜构成的膜204.通过将Si原子并入SiOB膜的网状结构中的分子骨架中，并且F原子通过防止形成Si-OH键而降低吸湿性， 实现了大约3.0的介电常数。

公开(公告)号：US06528410B1

公开(公告)日：2003-03-04

申请号：US09670290

申请日：2000-09-25

申请人： Tatsuya Usami ,  Hiraku Ishikawa

发明人： Tatsuya Usami ,  Hiraku Ishikawa

IPC分类号： H01L214763

CPC分类号： H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is manufactured by forming a first fluorine doped plasma silicon oxide film having a high fluorine concentration on first metallic interconnections formed on a semiconductor substrate surface, forming a second fluorine doped plasma silicon oxide film having a low fluorine concentration on the first film, and carrying out chemical machine polishing (CMP) only on the second fluorine doped plasma silicon oxide film.

摘要翻译： 通过在形成在半导体衬底表面上的第一金属互连上形成具有高氟浓度的第一氟掺杂等离子体氧化硅膜来制造半导体器件，在第一膜上形成具有低氟浓度的第二氟掺杂等离子体氧化硅膜， 并且仅在第二氟掺杂等离子体氧化硅膜上进行化学机械抛光（CMP）。

公开(公告)号：US06319847B1

公开(公告)日：2001-11-20

申请号：US09050561

申请日：1998-03-30

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L2131

CPC分类号： H01L21/31051 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76826 ,  H01L21/76828

摘要： A method for manufacturing a semiconductor device comprises forming a silicon nitride film, a BPSG film, and a SOG silicon oxide film containing boron or phosphorous on a transistor element, thermally treating the resultant wafer in a pressurized steam ambient, and thermally treating the wafer in an inactive gas ambient. The first thermal treatment causes hydrolysis of the SOG film to form a gel state of the SOG film, whereas the second thermal treatment hardens the SOG film by removing H2O content in the SOG film. The phosphorous or boron in the SOG film weakens the bonds in —Si—O—Si— chains in the SOG film to assist the separation of the —Si—O—Si— chains and the planarization of the SOG film.

摘要翻译： 一种制造半导体器件的方法包括在晶体管元件上形成氮化硅膜，BPSG膜和含有硼或磷的SOG氧化硅膜，在加压蒸汽环境中对所得晶片进行热处理，并将晶片热处理 惰性气体环境。 第一次热处理导致SOG膜的水解形成SOG膜的凝胶状态，而第二次热处理通过除去SOG膜中的H 2 O含量来硬化SOG膜。 SOG膜中的磷或硼减弱SOG膜中-Si-O-Si-链中的键，有助于分离-Si-O-Si-链和SOG膜的平坦化。

公开(公告)号：US5894170A

公开(公告)日：1999-04-13

申请号：US912067

申请日：1997-08-15

申请人： Hiraku Ishikawa

发明人： Hiraku Ishikawa

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/528 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device includes (a) a semiconductor substrate, (b) a first interlayer insulating film formed on the semiconductor substrate, (c) a wiring layer having a thickness T and a width W1 greater than the thickness T formed on the first interlayer insulating film, the wiring layer being divided into a plurality of wiring layer segments each of which has a width W2 equal to or smaller than the thickness T, and (d) a second interlayer insulating film covering the wiring layer segments therewith. The semiconductor device ensures that even when a second interlayer insulating film is formed on a wiring layer by means of bias sputtering or bias CVD, projections are not formed on the second interlayer insulating film above the wiring layer. Namely, it is possible to completely planarize the second interlayer insulating film.

摘要翻译： 半导体器件包括（a）半导体衬底，（b）形成在半导体衬底上的第一层间绝缘膜，（c）具有厚度T和宽度W1大于形成在第一层间绝缘体上的厚度T的布线层 所述布线层被分成多个布线层段，每个所述布线层段的宽度W2等于或小于所述厚度T;以及（d）覆盖所述布线层段的第二层间绝缘膜。 半导体器件确保即使当通过偏置溅射或偏压CVD在布线层上形成第二层间绝缘膜时，也不会在布线层上方的第二层间绝缘膜上形成突起。 即，可以使第二层间绝缘膜完全平坦化。