公开(公告)号：US4835005A

公开(公告)日：1989-05-30

申请号：US161386

申请日：1988-02-22

申请人： Masaaki Hirooka ,  Kyosuke Ogawa ,  Shunichi Ishihara ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Kyosuke Ogawa ,  Shunichi Ishihara ,  Isamu Shimizu

IPC分类号： C23C16/24 ,  C23C16/448 ,  C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L31/20

CPC分类号： H01L21/0245 ,  C23C16/24 ,  C23C16/448 ,  C23C16/452 ,  G03G5/08278 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.

摘要翻译： 用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上 。

公开(公告)号：US4812331A

公开(公告)日：1989-03-14

申请号：US942210

申请日：1986-12-16

申请人： Masaaki Hirooka ,  Masao Ueki ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masaaki Hirooka ,  Masao Ueki ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  H01L31/18 ,  C23C16/00

CPC分类号： H01L21/02546 ,  C23C16/301 ,  H01L21/0242 ,  H01L21/02543 ,  H01L21/02549 ,  H01L21/0262 ,  H01L31/184 ,  Y02E10/544

摘要： A method for forming a deposited film, which comprises introducing gaseous starting materials, containing group III and/or group V compound as the constituent element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action on said starting materials into a reaction space to effect contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film of a substrate existing in a film-forming space with the use of at least one precursor of said precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 一种形成沉积膜的方法，包括引入含有III族和/或V族化合物的气态原料作为形成沉积膜的构成元素和具有氧化作用的气态卤化氧化剂在所述原料上 进入反应空间以实现它们之间的接触，从而在激发状态下形成含有前体的多个前体，并且使用至少一种所述前体的前体形成存在于成膜空间中的基板的沉积膜作为 为沉积薄膜的组成元素提供源。

公开(公告)号：US4800173A

公开(公告)日：1989-01-24

申请号：US15951

申请日：1987-02-18

申请人： Masahiro Kanai ,  Junichi Hanna ,  Isamu Shimizu

发明人： Masahiro Kanai ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： C23C16/452 ,  C30B25/02 ,  C30B25/14 ,  H01L21/203 ,  H01L21/205 ,  H01L21/365

CPC分类号： C23C16/45561 ,  C23C16/452 ,  C30B25/02 ,  C30B25/14 ,  C30B29/06 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/048 ,  Y10S148/057 ,  Y10S148/058 ,  Y10S148/093 ,  Y10S438/925

摘要： Process for producing a valence electron controlled functional crystalline film by introducing (i) a film forming gaseous raw material, (ii) a halogen series gaseous oxidizing agent to oxidize the raw material (i), and (iii) a gaseous raw material to impart a valence electron controlling agent separtely into a reaction region of a film deposition space and chemically reacting them to generate plural kinds of precursors containing excited precursors and to let at least one kind of said precursors to act as a film forming supplier whereby said crystalline film is formed on a selected substrate being kept at a predetermined temperature in the film deposition space.

摘要翻译： 引入（i）成膜气态原料的成膜电子控制功能性结晶膜的制造方法，（ⅱ）卤素系列气态氧化剂氧化原料（i），（ⅲ）气态原料赋予 价电子控制剂分离地进入成膜空间的反应区域并使其化学反应以产生含有被激发的前体的多种前体，并使至少一种所述前体作为成膜供体，由此所述结晶膜为 在选择的基板上形成在膜沉积空间中保持在预定温度。

公开(公告)号：US4818564A

公开(公告)日：1989-04-04

申请号：US921462

申请日：1986-10-22

申请人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： C23C16/22 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205 ,  B05D5/06 ,  B05D5/12 ,  C23C16/00

CPC分类号： C23C16/452 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming a deposited film comprises introducing a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括将用于形成沉积膜的气态原料和具有用于所述起始材料的氧化作用的气态卤素氧化剂引入反应空间以在其间形成化学接触从而形成多个 的含有前体的前体在激发态下，并且使用这些前体的至少一种前体作为沉积膜的构成元素的进料源，在存在于成膜空间中的基板上形成沉积膜。

公开(公告)号：US4812325A

公开(公告)日：1989-03-14

申请号：US921197

申请日：1986-10-21

申请人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： G03G5/082 ,  B05D5/06 ,  B05D5/12 ,  C23C16/00

CPC分类号： G03G5/08278

摘要： A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.

摘要翻译： 形成沉积膜的方法包括将反应空间引入反应空间，该反应空间含有用于形成沉积膜的气体原料的基底（a），（b）气态氧化剂，和（c）含有价态的气态物质 电子控制器组件; 在其间形成化学接触以形成包含处于激发态的前体的多种前体; 以及用所述前体中的至少一种在所述基底上形成沉积膜。

公开(公告)号：US4839240A

公开(公告)日：1989-06-13

申请号：US135517

申请日：1987-12-18

申请人： Isamu Shimizu ,  Minori Yamaguchi

发明人： Isamu Shimizu ,  Minori Yamaguchi

IPC分类号： G03G5/08 ,  H01L31/0248 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/20

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/12632

摘要： A multilayer photoconductive material wherein at least two kinds of alloys selected from the group consisting of amorphous silicon or germanium alloys comprising silicon and/or germanium and at least one element selected from the group consisting of carbon, fluorine and hydrogen are alternately laminated, the kinds of alloys of the adjacent layers being different from each other and the total number of the layers being at least 6, which has exhibits a high response speed and can be easily controlled in sensitivity not only to long wavelength light but also to short wavelength light.

摘要翻译： 一种多层感光材料，其中选自包含硅和/或锗的非晶硅或锗合金的至少两种合金和选自碳，氟和氢的至少一种元素交替层压， 的相邻层的合金彼此不同，并且层的总数至少为6，其具有高响应速度，并且可以容易地不仅对长波长的光而且对于短波长的光敏感地控制。

公开(公告)号：US4837048A

公开(公告)日：1989-06-06

申请号：US920189

申请日：1986-10-17

申请人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： C23C14/14 ,  C23C16/22 ,  C23C16/452 ,  H01L21/205

CPC分类号： H01L21/0237 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262

摘要： A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.

摘要翻译： 用于形成沉积膜的方法包括引入用于形成沉积膜的气态原料和具有氧化作用的气态卤素氧化剂（X），所述氧化剂具有氧化作用的原料，至少一种氧化剂（ON）的气态氧 并且优选还包含含有价电子控制剂成分作为成分的气态物质（D）进入反应空间，以使它们之间发生化学接触，从而在激发态下形成含有前体的多种前体， 并且使用这些前体的至少一种前体作为沉积膜的构成元素的进料源，在存在于成膜空间中的基板上形成沉积膜。

公开(公告)号：US4818560A

公开(公告)日：1989-04-04

申请号：US945894

申请日：1986-12-24

申请人： Shunichi Ishihara ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/22 ,  C23C16/452 ,  G03G5/082 ,  H01L21/02 ,  H01L21/205 ,  B05D3/06

CPC分类号： H01L21/02425 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.

摘要翻译： 通过根据化学气相沉积法形成沉积膜来制备多层结构膜的方法包括引入作为主流量分量的主要原料气体（A）和目标原料气体（B），其是 小流量成分和氢外部活化成反应空间，并周期性地控制引入的所述目标原料气体（B）的量，从而形成具有多层结构的沉积膜。

公开(公告)号：US4801468A

公开(公告)日：1989-01-31

申请号：US831704

申请日：1986-02-21

申请人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Shigeru Ohno ,  Masahiro Kanai ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： C23C16/30 ,  C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L31/075 ,  H01L31/20 ,  B05D3/06

CPC分类号： G03G5/08292 ,  C23C16/30 ,  C23C16/452 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/20 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.

摘要翻译： 用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B） 其与所述活性物质（A）彼此分开反应，然后向其提供放电能量，从而允许物质彼此反应，从而在基底上形成沉积膜。

公开(公告)号：US4721664A

公开(公告)日：1988-01-26

申请号：US867624

申请日：1986-05-27

申请人： Isamu Shimizu ,  Kyosuke Ogawa ,  Eiichi Inoue

发明人： Isamu Shimizu ,  Kyosuke Ogawa ,  Eiichi Inoue

IPC分类号： C23C16/24 ,  G03G5/082 ,  H01L31/0392 ,  H01L31/20 ,  G03G5/085

CPC分类号： H01L31/202 ,  C23C16/24 ,  G03G5/08278 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for producing a photoconductive member comprises forming a photoconductive layer on a substrate for formation of a photoconductive layer by introducing starting substances for formation of a photoconductive layer under gaseous state into a deposition chamber maintained under a desired reduced pressure and exciting discharging under the gas atmosphere of said starting substances, characterized in that said starting substances are constituted of at least two compunds selected from the group consisting of the compounds of the formula:Si.sub.n H.sub.2n+2 (A)wherein n is a positive integer and the compounds of the formula:Si.sub.m H.sub.l X.sub.k (B)wherein m and k are positive integers, l is 0 or a positive integer, l+k=2m+2, and X represents a halogen atom, n and m being called "order number" hereinafter, and said starting substances to be introduced into said deposition chamber being controlled in amounts such that the proportion of the total of high order compounds is at least 1 vol. % based on the total of the minimum order compounds, the minimum order compound being one whose order number is the minimum among order numbers of said at least two compounds, the high order compound being one whose order number is higher than the order number of the minimum order compound.

摘要翻译： 一种制造感光体的方法包括在用于形成光电导层的基板上形成光电导层，通过将在气态下形成光电导层的起始物质引入保持在所需减压下的沉积室中，并在气体下激发放电 所述起始物质的气氛，其特征在于所述起始物质由选自下列化合物的至少两种化合物构成：下式化合物：其中n为正整数的SinH2n + 2（A）化合物和下式化合物： SimH1Xk（B）其中m和k为正整数，l为0或正整数，l + k = 2m + 2，X为卤原子，n和m在下文称为“次数”，所述起始物质 被引入所述沉积室的量被控制为使得高级化合物的总量的比例为至少1体积％。 基于最小订单化合物的总量的％，最小订单化合物是其序列号是所述至少两种化合物的订单号中最小值的化合物，高级化合物是其订货号高于 最小订单复合。