公开(公告)号：US20120090535A1

公开(公告)日：2012-04-19

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： C30B25/02

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US08043945B2

公开(公告)日：2011-10-25

申请号：US12401453

申请日：2009-03-10

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US08012858B2

公开(公告)日：2011-09-06

申请号：US12560265

申请日：2009-09-15

申请人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

发明人： Masahiko Murano ,  Ichiro Mizushima ,  Tsutomu Sato ,  Shinji Mori ,  Shuji Katsui ,  Hiroshi Itokawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02378 ,  H01L21/02532 ,  H01L21/02661 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/7848

摘要： A method of fabricating a semiconductor device according to one embodiment includes: removing a native oxide film and adhering silicon nitrides on an area of a Si based substrate in hydrogen gas atmosphere under a condition in which a pressure is a first pressure and a temperature is a first temperature, a silicon nitride-containing member being formed on the Si based substrate, the area being a area not covered by the member; lowering the temperature to a second temperature from the first temperature while maintaining the pressure at the first pressure in hydrogen gas atmosphere; lowering the pressure to a second pressure from the first pressure while maintaining the temperature at the second temperature in hydrogen gas atmosphere; and epitaxially growing a crystal on the area of the Si based substrate in a precursor gas atmosphere after the pressure is lowered to the second pressure, the crystal including at least one of Si and Ge, the precursor gas atmosphere including at least one of hydrogen, Si and Ge.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在氢气气氛中，在压力为第一压力和温度为的条件下，除去天然氧化物膜并将硅氮化物粘附在Si基衬底的区域上 第一温度，在所述Si基衬底上形成含氮化硅的构件，所述区域是未被构件覆盖的区域; 将温度从第一温度降低到第二温度，同时保持在氢气气氛中的第一压力下的压力; 将压力从第一压力降低到第二压力，同时将温度保持在第二温度在氢气气氛中; 并且在所述压力降低到所述第二压力之后，在前驱体气体气氛中，在所述Si基基板的区域上外延生长晶体，所述晶体包括Si和Ge中的至少一种，所述前体气体气体包括氢， Si和Ge。

公开(公告)号：US07402444B2

公开(公告)日：2008-07-22

申请号：US11519813

申请日：2006-09-13

申请人： Yoshimasa Kawase ,  Hiroshi Itokawa

发明人： Yoshimasa Kawase ,  Hiroshi Itokawa

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/12 ,  G01J5/0003 ,  H01L21/67115 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device using a wafer emissivity calculated from a wafer reflectivity to calculate a wafer temperature and to calculate target values for heat source optical intensities provided to a plurality of heat sources which heat the wafer and a substrate peripheral structure.

摘要翻译： 使用从晶片反射率计算的晶片发射率制造半导体器件的方法来计算晶片温度并计算提供给加热晶片和基板周边结构的多个热源的热源光强度的目标值。

公开(公告)号：US07247867B2

公开(公告)日：2007-07-24

申请号：US11170171

申请日：2005-06-30

申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

IPC分类号： G01N23/00 ,  G01N21/00 ,  A61N5/00 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/244 ,  H01J2237/065 ,  H01J2237/083 ,  H01J2237/20207 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

摘要翻译： 离子注入机包括用于设置具有主表面的样品的样品台，被配置为产生多个离子的离子产生部分，离子产生部分包括引入离子源气体的容器和用于发射热电子的灯丝 设置在容器中的植入部，其构造成在样品的主表面中植入含有多个离子的离子束，以及控制部，其被配置为控制样品的位置或从灯丝发射的电子的空间分布 离子束的重心的偏心方向与主面的法线方向一致。

公开(公告)号：US20110014781A1

公开(公告)日：2011-01-20

申请号：US12837025

申请日：2010-07-15

申请人： Hiroshi Itokawa ,  Ichiro Mizushima

发明人： Hiroshi Itokawa ,  Ichiro Mizushima

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02636 ,  H01L21/02667

摘要： According to one embodiment, a method of fabricating a semiconductor device includes forming a first insulator on a semiconductor substrate, forming a first groove on the insulator to expose at least a part of the semiconductor substrate at a bottom of the first groove, forming a first embedding film including at least germanium in the groove, melting the first embedding film by heat treatment, and crystallizing the first embedding film being melted to a single-crystalline film using the semiconductor substrate as a seed.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括在半导体衬底上形成第一绝缘体，在绝缘体上形成第一凹槽，以在第一凹槽的底部露出半导体衬底的至少一部分，形成第一 将至少含有锗的包埋膜通过热处理熔化，并且使用半导体基板作为种子将第一埋层膜熔化成单晶膜。

公开(公告)号：US20100029053A1

公开(公告)日：2010-02-04

申请号：US12534380

申请日：2009-08-03

申请人： Hiroshi Itokawa ,  Ichiro Mizushima ,  Kiyotaka Miyano

发明人： Hiroshi Itokawa ,  Ichiro Mizushima ,  Kiyotaka Miyano

IPC分类号： H01L21/336 ,  H01L21/322

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/2686 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

摘要： A method of manufacturing a semiconductor device for forming an n-type FET has forming an isolation insulating film on a surface of the semiconductor substrate consisting primarily of silicon, the isolation insulating film partitioning a device region of the semiconductor substrate; forming a gate insulating film on the device region of the semiconductor substrate; forming a gate electrode on the gate insulating film; amorphizing regions to be source/drain contact regions adjacent to the gate electrode, of the device region, by ion implanting of one of a carbon cluster ion, a carbon monomer ion and a molecular ion containing carbon into the regions to be the source/drain contact regions; forming an impurity-implanted layer to be the source/drain contact regions by ion implanting at least one of arsenic and phosphorus as an n-type impurity into the amorphized regions; and activating the carbon and the impurity in the impurity-implanted layer by heat treatment.

摘要翻译： 制造用于形成n型FET的半导体器件的方法在主要由硅组成的半导体衬底的表面上形成隔离绝缘膜，隔离绝缘膜分隔半导体衬底的器件区域; 在半导体衬底的器件区域上形成栅极绝缘膜; 在栅极绝缘膜上形成栅电极; 通过将碳簇离子，碳单体离子和含有碳的分子离子中的一种离子注入到作为源极/漏极的区域中，将非晶化区域设置为与栅极电极相邻的源极/漏极接触区域 接触区域 通过将作为n型杂质的砷和磷中的至少一种离子注入到非晶化区域中，形成作为源极/漏极接触区域的杂质注入层; 并通过热处理活化杂质注入层中的碳和杂质。

公开(公告)号：US20060017017A1

公开(公告)日：2006-01-26

申请号：US11170171

申请日：2005-06-30

申请人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

发明人： Hiroshi Itokawa ,  Yoshimasa Kawase ,  Kyoichi Suguro

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/244 ,  H01J2237/065 ,  H01J2237/083 ,  H01J2237/20207 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578 ,  H01J2237/31703

摘要： An ion implanter includes a sample stage for setting a sample having a main surface, an ion generating section configured to generate a plurality of ions, the ion generating section including a container into which an ion source gas is introduced and a filament for emitting thermal electrons provided in the container, an implanting section configured to implants an ion beam containing the plurality of ions in the main surface of the sample, and a control section configured to control a position of the sample or a spatial distribution of electrons emitted from the filament so that a direction of eccentricity of a center of gravity of the ion beam coincides with a direction of a normal line of the main surface.

摘要翻译： 离子注入机包括用于设置具有主表面的样品的样品台，被配置为产生多个离子的离子产生部分，离子产生部分包括引入离子源气体的容器和用于发射热电子的灯丝 设置在容器中的植入部，其构造成在样品的主表面中植入包含多个离子的离子束，以及控制部，其被配置为控制样品的位置或从灯丝发射的电子的空间分布 离子束的重心的偏心方向与主面的法线方向一致。

公开(公告)号：US20130017674A1

公开(公告)日：2013-01-17

申请号：US13181935

申请日：2011-07-13

申请人： Hiroshi Itokawa

发明人： Hiroshi Itokawa

IPC分类号： H01L21/205 ,  H01L21/265

CPC分类号： H01L21/26513 ,  H01L21/26593 ,  H01L21/268

摘要： Described herein are methods for forming a semiconductor structure. The methods involve forming a doped semiconductor film, amorphizing the doped semiconductor film through ion implantation; and annealing the doped semiconductor film. The ion implantation and the annealing can increase an activation efficiency of the dopant. The ion implantation and the annealing can also reduce a number of crystalline defects in the doped semiconductor film.

摘要翻译： 这里描述了形成半导体结构的方法。 所述方法包括形成掺杂半导体膜，通过离子注入使掺杂半导体膜非晶化; 并对掺杂的半导体膜进行退火。 离子注入和退火可以增加掺杂剂的活化效率。 离子注入和退火还可以减少掺杂半导体膜中的多个晶体缺陷。

公开(公告)号：US07986013B2

公开(公告)日：2011-07-26

申请号：US12271102

申请日：2008-11-14

申请人： Hiroshi Itokawa ,  Ichiro Mizushima

发明人： Hiroshi Itokawa ,  Ichiro Mizushima

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7848 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834

摘要： A semiconductor device includes a first semiconductor region having a channel region, and containing silicon as a main component, second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region, cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon, and silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide.

摘要翻译： 半导体器件包括具有沟道区域并且以硅为主要成分的第一半导体区域，夹置由SiGe形成的第一半导体区域的第二半导体区域，并向第一半导体区域施加应力，设置在第二半导体层上的盖层 区域，并且由含硅的碳或含SiGe的碳形成，以及设置在盖层上的由硅化镍或镍 - 铂合金硅化物形成的硅化物层。