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62 条记录 (耗时 0.049 秒)

    Plasma processing apparatus and plasma processing method
    31.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US07335278B2

    公开(公告)日：2008-02-26

    申请号：US10675966

    申请日：2003-10-02

    申请人： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

    发明人： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

    IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

    CPC分类号： H01L21/6831 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001 ,  H01L21/67248 ,  Y10S156/915

    摘要： An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

    摘要翻译： 静电吸盘108设置在设置在蚀刻装置100的处理室102内部的下部电极106上，并且导电内圈主体112a和绝缘外圈主体112b围绕安装在晶片W的外边缘 卡盘表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给第一至第三温度传感器142,144和146的中心之间的空间的He的压力水平 晶片W和静电卡盘108经由第一气体出口管114以及经由第二气体出口管道116与晶片W的外边缘和静电卡盘108之间的空间以及由外部环内的加热器148产生的热量 基于关于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

    Method for recording information on a memory
    36.
    发明授权
    Method for recording information on a memory 失效

    公开(公告)号：US06272568B1

    公开(公告)日：2001-08-07

    申请号：US09069795

    申请日：1998-04-30

    申请人： Hiroyuki Ishihara

    发明人： Hiroyuki Ishihara

    IPC分类号： G06F1338

    CPC分类号： H03M7/30

    摘要： A reference value is set for recording quantity of information, and a plurality of compression factors is provided for compressing information to be recorded. The compression factors are arranged in order. The information is sequentially recorded on a first memory at a first compression factor of the arrangement of the compression factors. It is determined whether the recording quantity of a first information group reaches the reference value. The first information group is compressed at a larger second compression factor when the recording quantities reaches the reference value, and the compressed first information group is recorded on the first memory at a first area. A second information group following the first information group is compressed at the second compression factor, and the compressed second information group is recorded on the first memory at a second area next to the first area. It is determined whether the sum of the recorded first and second information groups reaches the reference value. The recorded first and second information group are compressed at a further larger third compression factor. The compression of the information groups at succeeding compression factors and recording of the compressed information groups are repeated until end of the information to be recorded.

    Plasma processing method in semiconductor processing system
    37.
    发明授权
    Plasma processing method in semiconductor processing system 失效
    半导体处理系统中的等离子体处理方法

    公开(公告)号：US5958258A

    公开(公告)日：1999-09-28

    申请号：US98985

    申请日：1998-06-17

    申请人： Hiroyuki Ishihara ,  Kohei Kawamura

    发明人： Hiroyuki Ishihara ,  Kohei Kawamura

    IPC分类号： G01N21/68 ,  H01J37/32 ,  H01L21/66 ,  G01N21/00

    CPC分类号： B24B37/013 ,  G01N21/68 ,  H01J37/32935 ,  H01J37/32963 ,  H01L22/26

    摘要： A susceptor on which a wafer is placed, and an upper electrode are arranged in the processing chamber of an etching apparatus to oppose each other. An optical transmission window is disposed in the side wall of the processing chamber. The upper electrode and the susceptor are supplied with RF powers from a second RF power supply and a first RF power supply, respectively, to excite a plasma in the processing chamber. Emission of the plasma is detected by an optical detector through the optical transmission window, and data is sampled. In a CPU, the sampling data is subjected to fitting based on the Weibull distribution function, thus obtaining an approximate equation, and furthermore the differential equation of the approximate equation is obtained. The virtual end point of etching is expected from the approximate equation and differential equation.

    摘要翻译： 在其上放置晶片的感受体和上电极布置在蚀刻装置的处理室中以彼此相对。 光传输窗设置在处理室的侧壁中。 向上电极和基座分别提供来自第二RF电源和第一RF电源的RF功率，以激发处理室中的等离子体。 通过光传输窗口通过光学检测器检测等离子体的发射，并对数据进行采样。 在CPU中，根据Weibull分布函数对采样数据进行拟合，得到近似方程，得到近似方程的微分方程。 从近似方程和微分方程预期蚀刻的虚拟终点。

    Gas laser tube having a supported cathode
    38.
    发明授权
    Gas laser tube having a supported cathode 失效
    具有负极的气体激光管

    公开(公告)号：US4947403A

    公开(公告)日：1990-08-07

    申请号：US374298

    申请日：1989-06-30

    申请人： Hiroyuki Ishihara ,  Makoto Kinoshita

    发明人： Hiroyuki Ishihara ,  Makoto Kinoshita

    IPC分类号： H01S3/03

    CPC分类号： H01S3/03

    摘要： A hollow metal member which holds a mirror of an optical resonator in a gas laser tube is electrically and mechanically connected with a hollow cathode by a spring. The spring is positioned either outside or on the inner surface of the hollow metal member and elastically forces one end of the cathode against the inner wall of the hollow metal member.

    Microwave integrated circuit frequency converter
    39.
    发明授权
    Microwave integrated circuit frequency converter 失效
    微波集成电路变频器

    公开(公告)号：US4531236A

    公开(公告)日：1985-07-23

    申请号：US447826

    申请日：1982-12-08

    申请人： Hiroyuki Ishihara

    发明人： Hiroyuki Ishihara

    IPC分类号： H03D7/18 ,  H03D9/06 ,  H04B1/10 ,  H04B1/26

    CPC分类号： H03D9/0608 ,  H03D9/0633 ,  H03D2200/0037 ,  H03D7/18

    摘要： A microwave integrated circuit frequency converter includes a first filter (30) for a signal frequency and a second filter (32) for a local oscillator frequency connected at one terminal thereof with one terminal of the signal frequency filter (30) by a line (38), (40) having a predetermined electrical length. A parallel stub line (42) is short-circuited at one end thereof. A diode (34) is connected at its one end to a third filter (36) which is adapted to reflect the signal and local oscillator frequencies while passing an intermediate frequency. The diode (34) is connected at the other end to a line (41). The parallel stub line (42) and line (41) are connected at their other ends to a specific junction P on the connecting line (38), (40) at which the impedance is open circuited for the signal frequency when the local oscillator frequency filter (32) is seen from the signal frequency filter (30) side and the impedance is open circuited for the local oscillator frequency when the signal frequency filter (30) is seen from the local oscillator frequency filter (32) side.

    摘要翻译： 微波集成电路频率转换器包括用于信号频率的第一滤波器（30）和用于本地振荡器频率的第二滤波器（32），其一端连接有信号频率滤波器（30）的一个端子，线路（38） ），（40）具有预定的电长度。 平行短线（42）在其一端短路。 二极管（34）的一端连接到第三滤波器（36），其适于在通过中频的同时反射信号和本地振荡器频率。 二极管（34）在另一端连接到线路（41）。 平行短线（42）和线（41）的另一端在连接线（38），（40）上连接到特定的结点P，当连接线（38），（40）阻抗与信号频率开路时，本地振荡器频率 当从本地振荡器频率滤波器（32）侧看到信号频率滤波器（30）时，从信号频率滤波器（30）侧看到滤波器（32），并且当本机振荡器频率阻抗为开路。

    Surround signal generating device, surround signal generating method and surround signal generating program
    40.
    发明授权
    Surround signal generating device, surround signal generating method and surround signal generating program 有权
    环绕信号发生装置，环绕信号生成方法和环绕信号生成程序

    公开(公告)号：US09503816B2

    公开(公告)日：2016-11-22

    申请号：US13822855

    申请日：2010-09-14

    申请人： Akihiro Iseki ,  Yoshiki Ohta ,  Hiroyuki Ishihara ,  Yoshitomo Imanishi ,  Shinichi Kikuchi

    发明人： Akihiro Iseki ,  Yoshiki Ohta ,  Hiroyuki Ishihara ,  Yoshitomo Imanishi ,  Shinichi Kikuchi

    IPC分类号： H04S5/02 ,  H04R3/12 ,  H04S7/00 ,  H04S5/00

    CPC分类号： H04R3/12 ,  H04S5/005 ,  H04S5/02 ,  H04S7/30

    摘要： A surround signal generating device includes: a surround signal generating unit which subtracts a sound signal obtained by multiplying a first gain by an inputted sound signal of a right channel from an inputted sound signal of a left channel so as to generate a surround signal of the left channel, and which subtracts a sound signal obtained by multiplying a second gain by the inputted sound signal of the left channel from the inputted sound signal of the right channel so as to generate a surround signal of the right channel; and a gain setting unit which sets the first gain and the second gain so that a correlation between the surround signal of the left channel and the surround signal of the right channel which are generated by the surround signal generating unit realizes a correlation between surround signals of an actual content having a surround sound.

    摘要翻译： 环绕信号发生装置包括：环绕信号生成单元，其从左通道的输入声音信号中减去通过将第一增益乘以右声道的输入声音信号而获得的声音信号，以产生 左声道，并且从所输入的右声道的声音信号中减去通过将左声道的输入声音信号乘以第二增益而获得的声音信号，以产生右声道的环绕信号; 以及增益设定单元，其设定第一增益和第二增益，使得由环绕信号生成单元生成的左声道的环绕信号与右声道的环绕信号之间的相关性实现了环绕信号的环绕信号之间的相关性 具有环绕声的实际内容。