公开(公告)号：US5815056A

公开(公告)日：1998-09-29

申请号：US358348

申请日：1994-12-19

Applicant: Hitoshi Tada ,  Hideyuki Kato ,  Haruo Matsumoto ,  Tatsuya Tsujiguchi

Inventor： Hitoshi Tada ,  Hideyuki Kato ,  Haruo Matsumoto ,  Tatsuya Tsujiguchi

IPC: H01P1/205 ,  H01P1/212 ,  H01P7/04 ,  H01P11/00

CPC classification number: H01P11/008 ,  H01P1/2056

Abstract: In a dielectric resonator, through holes are formed between opposing two surfaces of a dielectric block, an outer conductor is provided on an outer peripheral surface of the dielectric block, and a plurality of inner conductors are formed on the inner surfaces of the through holes, isolated by non-conducting portions where the inner conductor is not provided. Near the open end of the inner conductor of the resonator hole, a non-conducting portion is formed by partially removing the inner conductor in the axial direction, at a position opposing to an adjacent through hole, or a position near the outer conductor, so as to increase odd mode or even mode characteristic impedance near the open end, whereby inductive coupling is adjustable.

Abstract translation: 在介质谐振器中，在介质块的相对的两个表面之间形成通孔，外部导体设置在介质块的外周表面上，并且多个内部导体形成在通孔的内表面上， 通过不设置内部导体的非导电部分隔离。 在谐振器孔的内部导体的开口端附近，通过在相对于相邻的通孔或靠近外部导体的位置相对的位置沿轴向部分地去除内部导体而形成非导电部分，因此 以增加开路端附近的奇模或偶模特性阻抗，从而电感耦合可调。

公开(公告)号：US5764117A

公开(公告)日：1998-06-09

申请号：US677925

申请日：1996-07-10

Applicant: Hiroshi Tada ,  Hajime Suemasa ,  Haruo Matsumoto ,  Takashi Maruyama ,  Hideyuki Kato ,  Yasuo Yamada ,  Hirohumi Miyamoto ,  Hitoshi Tada

Inventor： Hiroshi Tada ,  Hajime Suemasa ,  Haruo Matsumoto ,  Takashi Maruyama ,  Hideyuki Kato ,  Yasuo Yamada ,  Hirohumi Miyamoto ,  Hitoshi Tada

IPC: H01P1/205 ,  H01P1/213 ,  H01P5/08 ,  H01P7/04 ,  H05K1/02 ,  H05K1/14 ,  H05K3/34 ,  H05K3/36 ,  H01P1/202

CPC classification number: H05K1/0243 ,  H01P1/2056 ,  H05K1/141 ,  H05K2201/049 ,  H05K2201/09181 ,  H05K2201/10068 ,  H05K2201/10969 ,  H05K3/3442 ,  H05K3/3452 ,  H05K3/368

Abstract: A method of manufacturing a dielectric resonant component includes at least one dielectric multistage resonator including one dielectric block, a plurality of inner conductor formation holes formed in the one dielectric block, an inner conductor formed on an inner surface of each of the inner conductor formation holes, and an outer conductor covering a substantially entire outer surface of the one dielectric block, the dielectric multistage resonator constituting a plurality of dielectric resonators in the one dielectric block; and a mount substrate fixedly mounted on the dielectric multistage resonator, for transmitting signal transmission between each of the dielectric resonators of the dielectric multistage resonator and an external circuit board, when the dielectric resonant component is mounted on the external circuit board. The dielectric multistage resonator further includes a pair of input/output electrodes, and the mount substrate includes a unit for connecting the input/output electrodes of the dielectric multistage resonator to a pair of input/output electrodes formed on the circuit board.

Abstract translation: 一种制造介质谐振元件的方法包括至少一个电介质多级谐振器，其包括一个介电块，形成在一个介质块中的多个内导体形成孔，形成在每个内导体形成孔的内表面上的内导体 以及覆盖所述一个介质块的大致整个外表面的外导体，所述介质多级谐振器在所述一个介质块中构成多个介质谐振器; 以及固定安装在电介质多级谐振器上的安装基板，用于在电介质多级谐振器的每个介质谐振器和外部电路板之间传输信号，当介质谐振元件安装在外部电路板上时。 电介质多级谐振器还包括一对输入/输出电极，并且安装基板包括用于将电介质多级谐振器的输入/输出电极连接到形成在电路板上的一对输入/输出电极的单元。

公开(公告)号：US5612654A

公开(公告)日：1997-03-18

申请号：US377394

申请日：1995-01-24

Applicant: Tatsuya Tsujiguchi ,  Hitoshi Tada

Inventor： Tatsuya Tsujiguchi ,  Hitoshi Tada

IPC: H01P1/205 ,  H01P1/212 ,  H01P7/04 ,  H01P1/202

CPC classification number: H01P1/2056

Abstract: In a dielectric block, resonator holes have steps thereby providing a portion having a larger inner diameter and a portion having a smaller inner diameter, and the smaller inner diameter portion of each resonator hole is formed on the side of a short-circuited end surface. By forming the small inner diameter portions of the resonator holes relatively close to each other, the coupling between the two resonators becomes inductive coupling. By contrast, when small inner diameter portions are formed further apart from each other, the coupling between the two resonators becomes capacitive coupling. The coupling strength can be changed by adjusting the distance between the small inner diameter portions.

Abstract translation: 在介质块中，谐振器孔具有台阶，从而提供具有较大内径的部分和具有较小内径的部分，并且每个谐振器孔的较小内径部分形成在短路端面的一侧。 通过形成相对靠近的谐振器孔的小内径部分，两个谐振器之间的耦合变成电感耦合。 相反，当较小的内径部分彼此分开形成时，两个谐振器之间的耦合变为电容耦合。 可以通过调节小内径部分之间的距离来改变联接强度。

公开(公告)号：US5525946A

公开(公告)日：1996-06-11

申请号：US306207

申请日：1994-09-14

Applicant: Tatsuya Tsujiguchi ,  Tadahiro Yorita ,  Hitoshi Tada ,  Hideyuki Kato ,  Yukihiro Kitaichi ,  Haruo Matsumoto

Inventor： Tatsuya Tsujiguchi ,  Tadahiro Yorita ,  Hitoshi Tada ,  Hideyuki Kato ,  Yukihiro Kitaichi ,  Haruo Matsumoto

IPC: H01P1/205 ,  H01P1/202

CPC classification number: H01P1/2056

Abstract: A dielectric resonator apparatus comprising a plurality of dielectric coaxial resonators has a dielectric block with first and second surfaces and a plurality of side surfaces located therebetween, and a plurality of cylindrical resonator holes are formed in parallel to each other so as to penetrate the dielectric block, each of the resonator holes having an opening at the first surface and another opening at the second surface. Further, an outer conductor is formed on the first and second surfaces and a plurality of side surfaces, and a plurality of inner conductors is formed on the plurality of resonator holes, respectively. Then a plurality of extending conductors is formed in the vicinity of the openings of the plurality of resonator holes, respectively, so as to extend from the outer conductor to the plurality of resonator holes and to form gaps between the plurality of extending conductors and the inner conductors, each of the inner conductors having open-circuit ends in the vicinity of both the openings of the resonator holes, thereby constituting a plurality of dielectric coaxial resonators. Furthermore, a pair of input and output electrodes is formed on the side surfaces so as to be electrically insulated from the outer conductor.

Abstract translation: 包括多个介电同轴谐振器的介质谐振器装置具有介电块，其具有第一和第二表面以及位于其间的多个侧表面，并且多个圆柱形谐振器孔彼此平行地形成以穿透介电块 每个谐振器孔在第一表面具有开口，在第二表面具有另一个开口。 此外，在第一和第二表面和多个侧表面上形成外导体，并且在多个谐振器孔上分别形成多个内导体。 然后，分别在多个谐振器孔的开口附近形成多个延伸导体，以便从外部导体延伸到多个谐振器孔，并在多个延伸导体和内部导体之间形成间隙 导体，每个内部导体在谐振器孔的两个开口附近都具有开路端，从而构成多个电介质同轴谐振器。 此外，在侧表面上形成一对输入和输出电极，以便与外部导体电绝缘。

公开(公告)号：US5390205A

公开(公告)日：1995-02-14

申请号：US58366

申请日：1993-05-10

Applicant: Kenzo Mori ,  Tadashi Kimura ,  Yoshitatu Kawama ,  Nobuaki Kaneno ,  Tatuya Kimura ,  Yuji Okura ,  Hitoshi Tada

Inventor： Kenzo Mori ,  Tadashi Kimura ,  Yoshitatu Kawama ,  Nobuaki Kaneno ,  Tatuya Kimura ,  Yuji Okura ,  Hitoshi Tada

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC classification number: H01S5/227 ,  H01S5/2059 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2201 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  Y10S148/095

Abstract: A semiconductor laser includes a first conductivity type semiconductor substrate; a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer successively disposed on the semiconductor substrate; two parallel stripe grooves forming the double-heterojunction structure in a mesa shape; a first conductivity type mesa embedding layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer successively disposed on the semiconductor substrate and contacting opposite sides of the mesa; and impurity doped regions formed by adding an impurity through the surface of the first conductivity type current blocking layer. The impurity doped regions electrically separate an upper part of the mesa from the second conductivity type current blocking layer at opposite sides of the mesa. Since the second conductivity type current blocking layer is not in contact with the mesa structure, no leakage current path is formed in the laser structure.

Abstract translation: 半导体激光器包括第一导电型半导体衬底; 包括依次设置在所述半导体衬底上的第一导电型包覆层，有源层和第二导电型包层的双异质结结构; 两个平行的条纹槽形成台状形状的双异质结结构; 依次设置在半导体衬底上并接触台面相对两侧的第一导电型台面埋置层，第二导电型电流阻挡层和第一导电型电流阻挡层; 以及通过在第一导电型电流阻挡层的表面添加杂质而形成的杂质掺杂区域。 杂质掺杂区域在台面的相对侧将台面的上部与第二导电型电流阻挡层电隔离。 由于第二导电型电流阻挡层不与台面结构接触，所以在激光器结构中不形成漏电流路径。

公开(公告)号：US20100003778A1

公开(公告)日：2010-01-07

申请号：US12274435

申请日：2008-11-20

Applicant: Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

Inventor： Hitoshi Tada ,  Tsutomu Yamaguchi ,  Zempei Kawazu ,  Yuji Okura

IPC: H01L33/00

CPC classification number: H01S5/22 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2214 ,  H01S5/2224

Abstract: A method of manufacturing a semiconductor laser includes sequentially forming a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on top of one another on a semiconductor substrate; forming a ridge in the second conductivity type semiconductor layer; forming a first insulating film on the second conductivity type semiconductor layer at a first temperature; forming a second insulating film on the first insulating film at a second temperature, lower than the first temperature; and forming an electrode on the second insulating film.

Abstract translation: 半导体激光器的制造方法包括在半导体基板上依次形成第一导电型半导体层，有源层和第二导电型半导体层， 在第二导电类型半导体层中形成脊; 在第一温度下在第二导电类型半导体层上形成第一绝缘膜; 在低于第一温度的第二温度下在第一绝缘膜上形成第二绝缘膜; 以及在所述第二绝缘膜上形成电极。

公开(公告)号：US20080226223A1

公开(公告)日：2008-09-18

申请号：US12123531

申请日：2008-05-20

Applicant: Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

Inventor： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC: G02B6/12 ,  H01L21/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract translation: 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US20050029536A1

公开(公告)日：2005-02-10

申请号：US10852180

申请日：2004-05-25

Applicant: Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

Inventor： Atsushi Sugitatsu ,  Hitoshi Tada ,  Susumu Noda

IPC: H01S5/20 ,  G02B6/122 ,  H01S5/042 ,  H01L33/00

CPC classification number: H01S5/0425 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/1225 ,  G02F1/025 ,  G02F2202/32 ,  H01L2933/0083 ,  H01S5/0424 ,  H01S5/105 ,  H01S5/1085 ,  H01S5/2004 ,  H01S5/3054 ,  H01S5/32

Abstract: A semiconductor device has a two-dimensional slab photonic crystal structure in which a substrate supports a sheet-like slab layer including, sequentially stacked, a lower cladding layer, an active layer, and an upper cladding layer. A periodic refractive index profile structure, in surfaces of the stacked layers, introduces a linear defect region that serves as a waveguide. A p-type region and an n-type region in the slab layer define a pn junction surface at a predetermined angle with respect to the surfaces of the stacked layers in the slab layer.

Abstract translation: 半导体器件具有二维平板光子晶体结构，其中基板支撑包括顺序堆叠的下包层，有源层和上包层的片状板层。 在堆叠层的表面中的周期性折射率分布结构引入用作波导的线性缺陷区域。 板状层中的p型区域和n型区域相对于板坯层中的堆叠层的表面以预定的角度限定pn结表面。

公开(公告)号：US06778751B2

公开(公告)日：2004-08-17

申请号：US09817058

申请日：2001-03-27

Applicant: Hitoshi Tada ,  Kazuhisa Takagi

Inventor： Hitoshi Tada ,  Kazuhisa Takagi

IPC: G02B610

CPC classification number: G02F1/025 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/42

Abstract: An optical waveguide ridge has a side with a flat portion extending uniformly from a top of the ridge to a surface of a semiconductor substrate, the flat portion being in contact with an exposed surface of the substrate. A p-type electrode extends from the top of the optical waveguide ridge downward in contact with a dielectric film on the flat portion of the optical waveguide ridge. The p-type electrode further extends over the dielectric film onto the exposed surface of the semiconductor substrate where an end of the electrode is a bonding pad.

Abstract translation: 光波导脊具有从脊的顶部到半导体基板的表面均匀延伸的平坦部分的一侧，平坦部分与基板的暴露表面接触。 p型电极从光波导脊的顶部向下延伸，与光波导脊的平坦部分上的电介质膜接触。 p型电极进一步在电介质膜上延伸到半导体衬底的露出表面上，其中电极的端部是焊盘。

公开(公告)号：US06694601B2

公开(公告)日：2004-02-24

申请号：US09590625

申请日：2000-06-08

Applicant: Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

Inventor： Haruo Matsumoto ,  Yasuo Yamada ,  Yukihiro Kitaichi ,  Tadahiro Yorita ,  Hideyuki Kato ,  Tatsuya Tsujiguchi ,  Hisashi Mori ,  Hitoshi Tada

IPC: H01P1205

CPC classification number: H01P1/2056 ,  Y10T29/49016

Abstract: A method of adjusting characteristics of a dielectric filter including the following steps: forming a dielectric filter having a dielectric body, the dielectric body having an outer surface; forming an external conductor on the outer surface of the dielectric body; and forming at least one hole extending through the dielectric body, the at least one hole having a respective inner surface, and a respective internal conductor and a respective non-conductive portion at the inner surface; the outer surface of the dielectric body comprising first and second end surfaces and a side surface extending between the first and second end surfaces; the at least one hole extending through the dielectric body between the first and second end surfaces; the respective inner conductor being formed as a respective pair of internal conductors conductively connected to the external conductor at respective ends of the at least one hole, the respective non-conductive portion at the inner surface of the at least one hole being spaced from both end surfaces, thereby separating the corresponding pair of internal conductors and defining a respective capacitance between the corresponding pair of internal conductors; and a predetermined portion of the outer surface of the dielectric body being formed with a shape such that a first portion of the external conductor at the predetermined portion of the outer surface is closer to at least one of the internal conductors in the at least one hole as compared with a second portion of the external conductor at a portion of the outer surface of the dielectric body other than the predetermined portion; the method further comprising the steps of: initially forming the respective inner conductor over an entire length of the inner surface of the corresponding hole; and thereafter grinding off a portion of the respective inner conductor with a grinding tool in order to form the non-conductive portion.

Abstract translation: 一种调整介质滤波器的特性的方法，包括以下步骤：形成具有电介质体的介电滤波器，所述电介质体具有外表面; 在绝缘体的外表面上形成外部导体; 以及形成延伸穿过所述电介质体的至少一个孔，所述至少一个孔具有相应的内表面，以及相应的内部导体和在所述内表面处的相应的非导电部分; 电介质体的外表面包括第一和第二端面以及在第一和第二端面之间延伸的侧表面; 所述至少一个孔延伸穿过所述介电体在所述第一和第二端面之间; 相应的内部导体形成为在所述至少一个孔的相应端部处导电地连接到外部导体的相应的一对内部导体，所述至少一个孔的内表面处的相应的非导电部分与两个端部间隔开 从而分离相应的一对内部导体并且在相应的一对内部导体之间限定相应的电容; 并且所述电介质体的外表面的预定部分形成为使得所述外表面的所述预定部分处的所述外部导体的所述第一部分更靠近所述至少一个孔中的至少一个内部导体 与外部导体的除了预定部分之外的绝缘体外表面的一部分的第二部分相比; 该方法还包括以下步骤：在相应孔的内表面的整个长度上初始形成相应的内部导体; 然后用研磨工具研磨各个内部导体的一部分，以便形成非导电部分。