公开(公告)号：US10793419B2

公开(公告)日：2020-10-06

申请号：US16270315

申请日：2019-02-07

Applicant: Infineon Technologies AG

Inventor： Marc Fueldner ,  Niccolo De Milleri ,  Bernd Goller ,  Ulrich Krumbein ,  Gerhard Lohninger ,  Giordano Tosolini ,  Andreas Wiesbauer

IPC: B81B7/00 ,  H04R1/02 ,  H04R19/00 ,  H04R19/04

Abstract: A MEMS assembly includes a housing having an internal volume V, wherein the housing has a sound opening to the internal volume V, a MEMS component in the housing adjacent to the sound opening, and a layer element arranged at least regionally at a surface region of the housing that faces the internal volume V, wherein the layer element includes a layer material having a lower thermal conductivity and a higher heat capacity than the housing material of the housing that adjoins the layer element.

公开(公告)号：US10200801B2

公开(公告)日：2019-02-05

申请号：US15843915

申请日：2017-12-15

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Christian Jenkner ,  Ulrich Krumbein ,  Marc Füldner

IPC: H04R29/00

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

公开(公告)号：US20180317021A1

公开(公告)日：2018-11-01

申请号：US15581744

申请日：2017-04-28

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Ulrich Krumbein

IPC: H04R19/04 ,  H04R7/04 ,  H04R19/00 ,  B81B3/00

CPC classification number: H04R19/04 ,  B81B3/0089 ,  B81B7/0061 ,  B81B2201/0257 ,  H04R7/04 ,  H04R19/005 ,  H04R2201/003

Abstract: A sound transducer includes a housing with a sound port and a MEMS structure disposed in an interior space of the housing. The MEMS structure and the sound port are acoustically coupled to each other. The MEMS structure separates a front volume from a back volume of the housing. At least one vent hole of the MEMS structure allows a gas exchange between the front volume and the back volume. The sound port allows a liquid to enter the front volume. Further, the MEMS structure prevents liquid from entering the back volume.

公开(公告)号：US09942677B2

公开(公告)日：2018-04-10

申请号：US14486696

申请日：2014-09-15

Applicant: Infineon Technologies AG

Inventor： Andreas Wiesbauer ,  Christian Jenkner ,  Ulrich Krumbein ,  Marc Füldner

IPC: H04R29/00

CPC classification number: H04R29/004 ,  H04R2201/003

Abstract: According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. The symmetry detection circuit is coupled to a differential output of the transducer element and is configured to output an error signal based on asymmetry in the differential output.

公开(公告)号：US20140231974A1

公开(公告)日：2014-08-21

申请号：US14266348

申请日：2014-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Daniel Kehrer ,  Ulrich Krumbein ,  Beng-Keh See ,  Horst Theuss ,  Helmut Wietschorke ,  Tze Yang Hin ,  Stefan Martens

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/66

CPC classification number: H01L23/495 ,  H01L23/3107 ,  H01L23/315 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L25/16 ,  H01L2223/6611 ,  H01L2224/16145 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A module and a method for manufacturing a module are disclosed. An embodiment of a module includes a first semiconductor device, a frame arranged on the first semiconductor device, the frame including a cavity, and a second semiconductor device arranged on the frame wherein the second semiconductor device seals the cavity.

Abstract translation: 公开了一种用于制造模块的模块和方法。 模块的实施例包括第一半导体器件，布置在第一半导体器件上的框架，包括空腔的框架和布置在框架上的第二半导体器件，其中第二半导体器件密封空腔。

公开(公告)号：US20240288363A1

公开(公告)日：2024-08-29

申请号：US18582173

申请日：2024-02-20

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Ulrich Krumbein ,  Tobias Mittereder ,  Mark Pavier ,  Siyuan Qi ,  Hugh Richard ,  David Tumpold ,  Paul Westmarland

IPC: G01N21/3504

CPC classification number: G01N21/3504

Abstract: A package for an optical radiation device comprises a base structure having arranged thereon an optical radiation device, an optically transparent lid element bonded to the base structure defining a cavity between the base structure and the lid element, and a bond structure in a bonding region between the base structure and the lid element, wherein the bond structure is arranged to provide an adhesive bond between the base structure and the lid element, and wherein the bond structure comprises a diffusion layer having a gas diffusive material or gas diffusive structure for providing a gas diffusion path between the cavity and the surrounding atmosphere.

公开(公告)号：US11926521B2

公开(公告)日：2024-03-12

申请号：US17150527

申请日：2021-01-15

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein ,  Matthias Reinwald

IPC: B81B7/00 ,  B81C1/00 ,  G01N29/24 ,  G01N33/00

CPC classification number: B81B7/0067 ,  B81C1/00317 ,  G01N29/2418 ,  G01N33/0027 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81B2207/095

Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.

公开(公告)号：US11905167B2

公开(公告)日：2024-02-20

申请号：US17932409

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/02 ,  B81C1/00103 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/013 ,  H04R2201/003

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US20230160732A1

公开(公告)日：2023-05-25

申请号：US18065394

申请日：2022-12-13

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Christian Bretthauer ,  Wolfgang Klein ,  Ulrich Krumbein ,  David Tumpold

IPC: G01F1/688 ,  G01F1/86

CPC classification number: G01F1/6888 ,  G01F1/86

Abstract: A thermoresistive micro sensor device includes a semiconductor chip; a through hole, which runs through the semiconductor chip from an upper side to a lower side; electrically conductive structures, wherein the middle section of each of the electrically conductive structures spans over the through hole at the upper side of the semiconductor chip; an electrically insulating arrangement for electrically insulating the electrically conductive structures and the semiconductor chip from each other, wherein the through hole runs through the electrically insulating arrangement; and a contact arrangement including contacts, wherein each of the contacts is electrically connected to one of the first end sections or one of the second end sections, so that electrical energy is fed to at least one of the electrically conductive structures to heat the respective electrically conductive structure, and so that an electrical resistance of one of the electrically conductive structures is measured at the contact arrangement.

公开(公告)号：US11608265B2

公开(公告)日：2023-03-21

申请号：US17357234

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.