公开(公告)号：US20210320250A1

公开(公告)日：2021-10-14

申请号：US16844450

申请日：2020-04-09

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Martin Bartels ,  Christoph Glacer ,  Christoph Kadow ,  Matthias Markert ,  Hans Taddiken ,  Hans-Dieter Wohlmuth

IPC: H01L45/00

Abstract: A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

公开(公告)号：US10333510B2

公开(公告)日：2019-06-25

申请号：US15644435

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher ,  Anton Steltenpohl ,  Hans Taddiken ,  Danial Tayari

IPC: H03K17/16

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

公开(公告)号：US10156864B2

公开(公告)日：2018-12-18

申请号：US15679263

申请日：2017-08-17

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Werner Simbuerger ,  Anton Steltenpohl ,  Hans Taddiken

IPC: H01L27/00 ,  G05F3/20 ,  H01L27/06 ,  H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H03G1/00

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

公开(公告)号：US20180286941A1

公开(公告)日：2018-10-04

申请号：US15933998

申请日：2018-03-23

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Martin Bartels ,  Andrea Cattaneo ,  Henning Feick ,  Christian Kuehn ,  Anton Steltenpohl

IPC: H01L49/02 ,  H01L27/06 ,  H01L23/66

CPC classification number: H01L28/20 ,  H01L23/5228 ,  H01L23/66 ,  H01L27/0641 ,  H01L2924/1421

Abstract: A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.

公开(公告)号：US09882600B2

公开(公告)日：2018-01-30

申请号：US14172925

申请日：2014-02-05

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H04B1/00 ,  H04B1/44 ,  H01L21/324 ,  H01L29/78 ,  H01L29/10

CPC classification number: H04B1/44 ,  H01L21/324 ,  H01L29/1079 ,  H01L29/78

Abstract: According to various embodiments, a switching device may include: an antenna terminal; a switch including a first switch terminal and a second switch terminal, the first switch terminal coupled to the antenna terminal, the switch including at least one transistor at least one of over or in a silicon region including an oxygen impurity concentration of smaller than about 3×1017 atoms per cm3; and a transceiver terminal coupled to the second switch terminal, wherein the transceiver terminal is at least one of configured to provide a signal received via the antenna terminal or configured to receive a signal to be transmitted via the antenna terminal.

公开(公告)号：US08946823B2

公开(公告)日：2015-02-03

申请号：US14020510

申请日：2013-09-06

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC: H01L23/62 ,  H01L23/60 ,  H01L27/02 ,  H01L29/861

CPC classification number: H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract translation: 静电放电（ESD）保护元件包括集电区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

公开(公告)号：US20140001550A1

公开(公告)日：2014-01-02

申请号：US14016924

申请日：2013-09-03

Applicant: Infineon Technologies AG

Inventor： Reinhard Losehand ,  Hans Taddiken ,  Udo Gerlach

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L29/1083 ,  H01L29/1087 ,  H03K17/6871 ,  H03K17/693

Abstract: A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.

Abstract translation: 电路包括第一，第二，第三和第四端子以及第一和第二开关。 第一开关将第一信号从第一端子切换到第二端子，或者从第一端子切换到第四端子。 第二开关将第二信号从第三端子切换到第二端子，或者从第三端子切换到第四端子。 第一开关包括连接在第一端子和第二端子之间的第一高频开关晶体管的第一开关元件和连接在第一端子和第四端子之间的第二高频开关晶体管的第二开关元件。 第二开关包括具有连接在第三端子和第二端子之间的第三高频晶体管的第三开关元件，并且包括连接在第三端子和第四端子之间的第四高频开关晶体管的第四开关元件。

公开(公告)号：US20140001491A1

公开(公告)日：2014-01-02

申请号：US14020510

申请日：2013-09-06

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Hans Taddiken ,  Winfried Bakalski

IPC: H01L23/60

CPC classification number: H01L23/60 ,  H01L27/0259 ,  H01L29/861 ,  H01L29/8618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrostatic discharge (ESD) protection element includes a collector area, a first barrier area, a semiconductor area, a second barrier area and an emitter area. The collector area has a first conductivity type. The first barrier area borders on the collector area and has a second conductivity type. The semiconductor area borders on the first barrier area and is an intrinsic semiconductor area, or has the first or second conductivity type and a dopant concentration which is lower than a dopant concentration of the first barrier area. The second barrier area borders on the semiconductor area and has the second conductivity type and a higher dopant concentration than the semiconductor area. The emitter area borders on the second barrier area and has the first conductivity type.

Abstract translation: 静电放电（ESD）保护元件包括集电区域，第一阻挡区域，半导体区域，第二阻挡区域和发射极区域。 集电区具有第一导电类型。 第一屏障区域与集电区域相邻，具有第二导电类型。 半导体区域与第一屏障区域相邻并且是本征半导体区域，或者具有低于第一阻挡区域的掺杂剂浓度的第一或第二导电类型和掺杂剂浓度。 第二阻挡区域与半导体区域相邻并且具有比半导体区域更高的第二导电类型和更高的掺杂剂浓度。 发射极区域与第二阻挡区域相邻并且具有第一导电类型。

公开(公告)号：US20130278323A1

公开(公告)日：2013-10-24

申请号：US13918319

申请日：2013-06-14

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Hans Taddiken ,  Nikolay Ilkov ,  Herbert Kebinger

IPC: H03K17/16

CPC classification number: H02M3/07 ,  H03K17/161 ,  H03K17/6871 ,  H03K2217/0018

Abstract: A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.

Abstract translation: 高频开关电路包括高频开关晶体管，其中高频信号路径经由高频开关晶体管的沟道路径延伸。 高频开关电路包括控制电路，并且控制电路被配置为根据由控制电路接收的控制信号将至少两个不同的偏置电位施加到高频开关晶体管的衬底。