公开(公告)号：US11622448B2

公开(公告)日：2023-04-04

申请号：US16505403

申请日：2019-07-08

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Tarek Ibrahim ,  Srinivas Pietambaram ,  Andrew J. Brown ,  Gang Duan ,  Jeremy Ecton ,  Sheng C. Li

IPC: H05K1/11 ,  H05K1/16 ,  H01L23/00 ,  H01F27/40 ,  H05K3/40 ,  H05K3/28

Abstract: Embodiments include package substrates and method of forming the package substrates. A package substrate includes a first encapsulation layer over a substrate, and a second encapsulation layer below the substrate. The package substrate also includes a first interconnect and a second interconnect vertically in the first encapsulation layer, the second encapsulation layer, and the substrate. The first interconnect includes a first plated-through-hole (PTH) core, a first via, and a second via, and the second interconnect includes a second PTH core, a third via, and a fourth via. The package substrate further includes a magnetic portion that vertically surrounds the first interconnect. The first PTH core has a top surface directly coupled to the first via, and a bottom surface directly coupled to the second via. The second PTH core has a top surface directly coupled to the third via, and a bottom surface directly coupled to the fourth via.

公开(公告)号：US20230078099A1

公开(公告)日：2023-03-16

申请号：US17473414

申请日：2021-09-13

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Gang Duan ,  Srinivas V. Pietambaram ,  Brandon C. Marin ,  Bai Nie

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/15 ,  H01L23/31 ,  H01L21/48

Abstract: A substrate of a microelectronic assembly is provided, the substrate comprising conductive traces through an organic dielectric, and a coating comprising silicon and oxygen. The substrate is configured to couple with a component electrically and mechanically by at least one or more conductive via through the coating, the conductive via being electrically connected to the conductive traces, such that the coating is between the organic dielectric and the component when coupled. In some embodiments, the component includes another coating comprising silicon and oxygen, with conductive vias through the second coating. The conductive vias and the coating of the substrate are configured to bind with the conductive vias and the coating of the component respectively to form hybrid bonds.

公开(公告)号：US20220399307A1

公开(公告)日：2022-12-15

申请号：US17344681

申请日：2021-06-10

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Sai Vadlamani ,  Omkar Karhade ,  Tolga Acikalin

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/64

Abstract: An electronic substrate may be fabricated having a core comprising a laminate including a metal layer between a first insulator layer and a second insulator layer, a metal via through the core, and metallization features on a first side and a second side of the core, wherein first ones of the metallization features are embedded within dielectric material on the first side of the core, and wherein a sidewall of the dielectric material and of the first insulator layer defines a recess over an area of the metal layer. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board. Other embodiments are disclosed and claimed.

公开(公告)号：US11081768B2

公开(公告)日：2021-08-03

申请号：US16421989

申请日：2019-05-24

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Jeremy D. Ecton ,  Aleksandar Aleksov ,  Kristof Darmawikarta ,  Yonggang Li ,  Dilan Seneviratne

IPC: H01P1/208 ,  H01P1/20 ,  H01P7/10 ,  H01L23/66 ,  H01P3/16 ,  H01L21/768 ,  H01P11/00 ,  H01L21/288

Abstract: A filter structure comprises a first dielectric buildup film. A second dielectric buildup film is over the first dielectric buildup film, the second dielectric buildup film including a metallization catalyst. A trench is in the second dielectric buildup film. A metal is selectively plated to sidewalls of the trench based at least in part on the metallization catalyst. A low-loss buildup film is over the metal that substantially fills the trench.

公开(公告)号：US20200312787A1

公开(公告)日：2020-10-01

申请号：US16369681

申请日：2019-03-29

Applicant: Intel Corporation

Inventor： Yonggang Li ,  Brandon C. Marin ,  Vahidreza Parichehreh ,  Jeremy D. Ecton

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: A package for an electronic device may include a first layer. The first layer may include a first dielectric material. The first layer may have a planar first surface. The first layer may have a variable thickness. A second layer may be coupled to the first layer. The second layer may include a second dielectric material and may have a planar second surface. The second layer may have a variable thickness. A seam may be located at an interface between the first layer and the second layer, and the seam may have an undulating profile. The package may include at least one electrical trace, for example located in the first layer or the second layer.

公开(公告)号：US20200253037A1

公开(公告)日：2020-08-06

申请号：US16268813

申请日：2019-02-06

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Andrew James Brown ,  Rahul Jain ,  Dilan Seneviratne ,  Praneeth Kumar Akkinepally ,  Frank Truong

IPC: H05K1/02 ,  H05K1/11 ,  H01L23/498

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a substrate layer having a surface, wherein the substrate layer includes a photo-imageable dielectric (PID) and an electroless catalyst; a first conductive trace having a first thickness on the surface of the substrate layer; and a second conductive trace having a second thickness on the surface of the substrate layer, wherein the first thickness is greater than the second thickness.

公开(公告)号：US20250125307A1

公开(公告)日：2025-04-17

申请号：US18985540

申请日：2024-12-18

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Jason M. Gamba ,  Brandon C. Marin ,  Srinivas V. Pietambaram ,  Xiaoxuan Sun ,  Omkar G. Karhade ,  Xavier Francois Brun ,  Yonggang Li ,  Suddhasattwa Nad ,  Bohan Shan ,  Haobo Chen ,  Gang Duan

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

公开(公告)号：US20250112162A1

公开(公告)日：2025-04-03

申请号：US18375469

申请日：2023-09-30

Applicant: Intel Corporation

Inventor： Zheng Kang ,  Tchefor Ndukum ,  Yosuke Kanaoka ,  Jeremy Ecton ,  Gang Duan ,  Jefferson Kaplan ,  Yonggang Yong Li ,  Minglu Liu ,  Brandon C. Marin ,  Bai Nie ,  Srinivas Pietambaram ,  Shriya Seshadri ,  Bohan Shan ,  Deniz Turan ,  Vishal Bhimrao Zade

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00

Abstract: An electronic package comprises a substrate core; one or more dielectric material layers over the substrate core and having a lower dielectric material layer, and a plurality of metallization layers comprising an upper-most metallization layer; an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer; and at least one conductive feature below and coupled to the IC die. A downwardly facing surface of the conductive feature is located on the lower dielectric material layer and defines a horizontal plane at a junction between the conductive feature and the lower dielectric material layer. The lower dielectric material layer has an upper facing surface facing in a direction of the IC die adjacent the conductive feature that is vertically offset from the horizontal plane.

公开(公告)号：US20250112124A1

公开(公告)日：2025-04-03

申请号：US18374555

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Aleksandar Aleksov ,  Leonel Arana ,  Gang Duan ,  Benjamin Duong ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon C. Marin ,  Tchefor Ndukum ,  Bai Nie ,  Srinivas Pietambaram ,  Bohan Shan ,  Matthew Tingey

IPC: H01L23/482 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/065

Abstract: DEEP CAVITY ARRANGEMENTS ON INTEGRATED CIRCUIT PACKAGING An electronic package, comprises a substrate core; dielectric material of one or more dielectric material layers over the substrate core, and having a plurality of metallization layers comprising an upper-most metallization layer; and an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer. The package also has a metallization pattern within the dielectric material and below the IC die; and a gap within the dielectric material and extending around the metallization pattern.

公开(公告)号：US20250105222A1

公开(公告)日：2025-03-27

申请号：US18475326

申请日：2023-09-27

Applicant: Intel Corporation

Inventor： Gang Duan ,  Yosuke Kanaoka ,  Minglu Liu ,  Srinivas V. Pietambaram ,  Brandon C. Marin ,  Bohan Shan ,  Haobo Chen ,  Benjamin T. Duong ,  Jeremy Ecton ,  Suddhasattwa Nad

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/29 ,  H01L23/538

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer including first dies in a first insulating material; a second layer on the first layer, the second layer including second dies and third dies in a second insulating material, the second dies having a first thickness, the third dies having a second thickness different than the first thickness, and the second dies and the third dies having a surface, wherein the surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways through the RDL, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways through the RDL and by interconnects.