公开(公告)号：US11817349B2

公开(公告)日：2023-11-14

申请号：US16809905

申请日：2020-03-05

申请人： INTEL CORPORATION

发明人： Jeremy Ecton ,  Brandon C. Marin ,  Leonel Arana ,  Matthew Tingey ,  Oscar Ojeda ,  Hsin-Wei Wang ,  Suddhasattwa Nad ,  Srinivas Pietambaram ,  Gang Duan

IPC分类号： H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3213

CPC分类号： H01L21/76885 ,  H01L21/7685 ,  H01L21/76834 ,  H01L21/76852 ,  H01L23/528 ,  H01L23/53238 ,  H01L21/32134

摘要： A conductive route for an integrated circuit assembly may be formed using a sequence of etching and passivation steps through layers of conductive material, wherein the resulting structure may include a first route portion having a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, an etch stop structure on the first route portion, a second route portion on the etch stop layer, wherein the second route portion has a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, and a passivating layer abutting the at least one side surface of the second route portion.

公开(公告)号：US20220093520A1

公开(公告)日：2022-03-24

申请号：US17026703

申请日：2020-09-21

申请人： Intel Corporation

发明人： Jeremy D. Ecton ,  Aleksandar Aleksov ,  Brandon C. Marin ,  Yonggang Li ,  Leonel Arana ,  Suddhasattwa Nad ,  Haobo Chen ,  Tarek Ibrahim

IPC分类号： H01L23/538 ,  H05K1/11 ,  H01L21/768

摘要： Conductive routes for an electronic substrate may be fabricated by forming an opening in a material, using existing laser drilling or lithography tools and materials, followed by selectively plating a metal on the sidewalls of the opening. The processes of the present description may result in significantly higher patterning resolution or feature scaling (up to 2× improvement in patterning density/resolution). In addition to improved patterning resolution, the embodiments of the present description may also result in higher aspect ratios of the conductive routes, which can result in improved signaling, reduced latency, and improved yield.

公开(公告)号：US11088103B2

公开(公告)日：2021-08-10

申请号：US16646084

申请日：2018-01-12

申请人： Intel Corporation

发明人： Changhua Liu ,  Xiaoying Guo ,  Aleksandar Aleksov ,  Steve S. Cho ,  Leonel Arana ,  Robert May ,  Gang Duan

IPC分类号： H01L23/52 ,  H01L23/00

摘要： A patch structure of an integrated circuit package comprises a core having a first side facing downwards and a second side facing upwards. A first solder resist (SR) layer is formed on the first side of the core, wherein the first SR layer comprises a first layer interconnect (FLI) and has a first set of one or more microbumps thereon to bond to one or more logic die. A second solder resist (SR) layer is formed on the second side of the core, wherein the second SR layer has a second set of one or more microbumps thereon to bond with a substrate. One or more bridge dies includes a respective sets of bumps, wherein the one or more bridge dies is disposed flipped over within the core such that the respective sets of bumps face downward and connect to the first set of one or more microbumps in the FLI.

公开(公告)号：US12033930B2

公开(公告)日：2024-07-09

申请号：US17033392

申请日：2020-09-25

申请人： Intel Corporation

发明人： Jieying Kong ,  Yiyang Zhou ,  Suddhasattwa Nad ,  Jeremy Ecton ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon Marin ,  Zhiguo Qian ,  Sarah Blythe ,  Bohan Shan ,  Jason Steill ,  Sri Chaitra Jyotsna Chavali ,  Leonel Arana ,  Dingying Xu ,  Marcel Wall

IPC分类号： H01L23/498 ,  H01L21/48

CPC分类号： H01L23/49838 ,  H01L21/485 ,  H01L23/49827

摘要： An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

公开(公告)号：US20240222283A1

公开(公告)日：2024-07-04

申请号：US18147487

申请日：2022-12-28

申请人： Intel Corporation

发明人： Hongxia Feng ,  Bohan Shan ,  Bai Nie ,  Xiaoxuan Sun ,  Holly Sawyer ,  Tarek Ibrahim ,  Adwait Telang ,  Dingying Xu ,  Leonel Arana ,  Xiaoying Guo ,  Ashay Dani ,  Sairam Agraharam ,  Haobo Chen ,  Srinivas Pietambaram ,  Gang Duan

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L23/5386 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2924/15311

摘要： Methods and apparatus to prevent over-etch in semiconductor packages are disclosed. A disclosed example semiconductor package includes at least one dielectric layer, an interconnect extending at least partially through or from the at least one dielectric layer, and a material on at least a portion of the interconnect, wherein the material comprises at least one of silicon or titanium.

公开(公告)号：US20240222259A1

公开(公告)日：2024-07-04

申请号：US18147535

申请日：2022-12-28

申请人： Intel Corporation

发明人： Haobo Chen ,  Bohan Shan ,  Xiyu Hu ,  Rhonda Jack ,  Catherine Mau ,  Hongxia Feng ,  Xiao Liu ,  Wei Wei ,  Srinivas Pietambaram ,  Gang Duan ,  Xiaoying Guo ,  Dingying Xu ,  Kyle Arrington ,  Ziyin Lin ,  Hiroki Tanaka ,  Leonel Arana

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/49894 ,  H01L21/481 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/16

摘要： Methods, systems, apparatus, and articles of manufacture to produce integrated circuit (IC) packages having silicon nitride adhesion promoters are disclosed. An example IC package disclosed herein includes a metal layer on a substrate, a layer on the metal layer, the layer including silicon and nitrogen, and solder resist on the layer.

公开(公告)号：US12027466B2

公开(公告)日：2024-07-02

申请号：US17026703

申请日：2020-09-21

申请人： Intel Corporation

发明人： Jeremy D. Ecton ,  Aleksandar Aleksov ,  Brandon C. Marin ,  Yonggang Li ,  Leonel Arana ,  Suddhasattwa Nad ,  Haobo Chen ,  Tarek Ibrahim

IPC分类号： H01L23/538 ,  H01L21/768 ,  H05K1/11

CPC分类号： H01L23/5386 ,  H01L21/76838 ,  H01L23/5385 ,  H05K1/11

摘要： Conductive routes for an electronic substrate may be fabricated by forming an opening in a material, using existing laser drilling or lithography tools and materials, followed by selectively plating a metal on the sidewalls of the opening. The processes of the present description may result in significantly higher patterning resolution or feature scaling (up to 2× improvement in patterning density/resolution). In addition to improved patterning resolution, the embodiments of the present description may also result in higher aspect ratios of the conductive routes, which can result in improved signaling, reduced latency, and improved yield.

公开(公告)号：US20230097624A1

公开(公告)日：2023-03-30

申请号：US17484486

申请日：2021-09-24

申请人： Intel Corporation

发明人： Kyle McElhinny ,  Onur Ozkan ,  Ali Lehaf ,  Xiaoying Guo ,  Steve Cho ,  Leonel Arana ,  Jung Kyu Han ,  Srinivas Pietambaram ,  Sashi Kandanur ,  Alexander Aguinaga

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/12 ,  H01L25/065 ,  H01L21/48 ,  H01L21/50

摘要： Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes an array of bumps to electrically couple the die to the substrate. Each of the bumps have a corresponding base. Different ones of the bases have different widths that vary spatially across the array of bumps.

公开(公告)号：US11506982B2

公开(公告)日：2022-11-22

申请号：US16143206

申请日：2018-09-26

申请人： Intel Corporation

发明人： Vahidreza Parichehreh ,  Keith J. Martin ,  Changhua Liu ,  Leonel Arana

IPC分类号： G03F7/20 ,  H01L21/027 ,  G02B5/04 ,  H01L21/3213

摘要： Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. The lithographic patterning system includes an actinic radiation source, a stage having a surface for supporting a substrate with a resist layer, and a prism with a first surface over the stage, where the first surface has a masked layer and is substantially parallel to the surface of the stage. The prism may have a second surface that is substantially parallel to the first surface. The first and second surfaces are flat surfaces. The prism is a monolithic prism-mask, where an optical path passes through the system and exits the first surface of the prism through the mask layer. The system may include a layer disposed between the mask and resist layers. The mask layer of the prism may pattern the resist layer without an isolated mask layer.

公开(公告)号：US20220102259A1

公开(公告)日：2022-03-31

申请号：US17033392

申请日：2020-09-25

申请人： Intel Corporation

发明人： Jieying Kong ,  Yiyang Zhou ,  Suddhasattwa Nad ,  Jeremy Ecton ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon Marin ,  Zhiguo Qian ,  Sarah Blythe ,  Bohan Shan ,  Jason Steill ,  Sri Chaitra Jyotsna Chavali ,  Leonel Arana ,  Dingying Xu ,  Marcel Wall

IPC分类号： H01L23/498 ,  H01L21/48

摘要： An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.