公开(公告)号：US20230076148A1

公开(公告)日：2023-03-09

申请号：US17470404

申请日：2021-09-09

申请人： Intel Corporation

发明人： Xavier Francois Brun ,  Jason M. Gamba ,  Srinivas V. Pietambaram

IPC分类号： H01L25/065 ,  H01L23/31

摘要： An example an IC package including a liner for promotion of mold adhesion includes a conductive structure on a support surface; a mold material at least partially encasing the conductive structure; and a liner on a surface of the conductive structure between the surface of the conductive structure and the mold material, wherein the liner comprises a material including silicon and nitrogen.

公开(公告)号：US11521931B2

公开(公告)日：2022-12-06

申请号：US16902768

申请日：2020-06-16

申请人： Intel Corporation

发明人： Jason M. Gamba ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Omkar G. Karhade ,  Bai Nie ,  Gang Duan ,  Kristof Kuwawi Darmawikarta ,  Wei-Lun Jen

IPC分类号： H01L23/538 ,  H01L23/00 ,  H01L23/498

摘要： Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US11302643B2

公开(公告)日：2022-04-12

申请号：US16829396

申请日：2020-03-25

申请人： Intel Corporation

发明人： Sanka Ganesan ,  Ram Viswanath ,  Xavier Francois Brun ,  Tarek A. Ibrahim ,  Jason M. Gamba ,  Manish Dubey ,  Robert Alan May

IPC分类号： H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.

公开(公告)号：US11817390B2

公开(公告)日：2023-11-14

申请号：US18090795

申请日：2022-12-29

申请人： Intel Corporation

发明人： Sanka Ganesan ,  Ram Viswanath ,  Xavier Francois Brun ,  Tarek A. Ibrahim ,  Jason M. Gamba ,  Manish Dubey ,  Robert Alan May

IPC分类号： H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/5381 ,  H01L23/3185 ,  H01L23/367 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/16 ,  H01L2224/16227

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.

公开(公告)号：US11233009B2

公开(公告)日：2022-01-25

申请号：US16832150

申请日：2020-03-27

申请人： Intel Corporation

发明人： Praneeth Kumar Akkinepally ,  Frank Truong ,  Jason M. Gamba ,  Robert Alan May

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L23/31

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

公开(公告)号：US20210391266A1

公开(公告)日：2021-12-16

申请号：US16902768

申请日：2020-06-16

申请人： Intel Corporation

发明人： Jason M. Gamba ,  Nitin A. Deshpande ,  Mohit Bhatia ,  Omkar G. Karhade ,  Bai Nie ,  Gang Duan ,  Kristof Kuwawi Darmawikarta ,  Wei-Lun Jen

IPC分类号： H01L23/538 ,  H01L23/498 ,  H01L23/00

摘要： Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.

公开(公告)号：US20210305162A1

公开(公告)日：2021-09-30

申请号：US16829396

申请日：2020-03-25

申请人： Intel Corporation

发明人： Sanka Ganesan ,  Ram Viswanath ,  Xavier Francois Brun ,  Tarek A. Ibrahim ,  Jason M. Gamba ,  Manish Dubey ,  Robert Alan May

IPC分类号： H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.

公开(公告)号：US20240030142A1

公开(公告)日：2024-01-25

申请号：US18375867

申请日：2023-10-02

申请人： Intel Corporation

发明人： Sanka Ganesan ,  Ram Viswanath ,  Xavier Francois Brun ,  Tarek A. Ibrahim ,  Jason M. Gamba ,  Manish Dubey ,  Robert Alan May

IPC分类号： H01L23/538 ,  H01L23/367 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/5381 ,  H01L23/367 ,  H01L23/3185 ,  H01L23/5386 ,  H01L24/16 ,  H01L23/5384 ,  H01L2224/16227

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic component may include a substrate having a first face and an opposing second face, wherein the substrate includes a through-substrate via (TSV); a first mold material region at the first face, wherein the first mold material region includes a first through-mold via (TMV) conductively coupled to the TSV; and a second mold material region at the second face, wherein the second mold material region includes a second TMV conductively coupled to the TSV.

公开(公告)号：US11688692B2

公开(公告)日：2023-06-27

申请号：US17540079

申请日：2021-12-01

申请人： Intel Corporation

发明人： Praneeth Kumar Akkinepally ,  Frank Truong ,  Jason M. Gamba ,  Robert Alan May

IPC分类号： H01L23/538 ,  H01L25/065 ,  H01L23/31

CPC分类号： H01L23/5381 ,  H01L23/3157 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0655

摘要： Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface; a microelectronic component embedded in the package substrate, the microelectronic component including: a substrate having a surface, where the substrate includes a conductive pathway and a mold material region at the surface, where the mold material region includes a through-mold via (TMV) electrically coupled to the conductive pathway, and where the mold material region is at the second surface of the package substrate; and a die conductively coupled, at the second surface of the package substrate, to the package substrate and to the TMV of the microelectronic component.

公开(公告)号：US20210391264A1

公开(公告)日：2021-12-16

申请号：US16902959

申请日：2020-06-16

申请人： Intel Corporation

发明人： Bai Nie ,  Kristof Kuwawi Darmawikarta ,  Srinivas V. Pietambaram ,  Haobo Chen ,  Gang Duan ,  Jason M. Gamba ,  Omkar G. Karhade ,  Nitin A. Deshpande ,  Tarek A. Ibrahim ,  Rahul N. Manepalli ,  Deepak Vasant Kulkarni ,  Ravindra Vijay Tanikella

IPC分类号： H01L23/538 ,  H01L21/48

摘要： Disclosed herein are microelectronic structures including bridges, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a substrate and a bridge.