摘要:
Implementing a convolutional neural network (CNN) includes configuring a crosspoint array to implement a convolution layer in the CNN. Convolution kernels of the layer are stored in crosspoint devices of the array. Computations for the CNN are performed by iterating a set of operations for a predetermined number of times. The operations include transmitting voltage pulses corresponding to a subpart of a vector of input data to the crosspoint array. The voltage pulses generate electric currents that are representative of performing multiplication operations at the crosspoint device based on weight values stored at the crosspoint devices. A set of integrators accumulates an electric charge based on the output electric currents from the respective crosspoint devices. The crosspoint array outputs the accumulated charge after iterating for the predetermined number of times. The accumulated charge represents a multiply-add result of the vector of input data and the one or more convolution kernels.
摘要:
A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to an edge of the first external dummy is greater than a first distance.
摘要:
The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.
摘要:
Methods for preparing a patterned directed self-assembly layer generally include providing a substrate having a block copolymer layer including a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer. The block polymer layer is exposed to a gas pulsing carbon monoxide polymer. The gas pulsing is configured to provide multiple cycles of an etching plasma and a deposition plasma to selectively remove the second pattern of the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the substrate.
摘要:
The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.
摘要:
A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a guiding pattern layout, include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than a first distance.
摘要:
A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than a first distance.
摘要:
A method, system, and non-transitory computer readable medium for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, include inserting an internal dummy between a first portion of the guiding pattern and a second portion of the guiding pattern if a vertical spacing is equal to or greater than a first predetermined distance, inserting a first external dummy along an external edge of the guiding pattern in a vertical direction if the vertical spacing is greater than a second predetermined distance, and inserting an anti-taper structure on the first external dummy if a second distance from the external edge of the guiding pattern to the edge of the first external dummy is greater than a first distance.
摘要:
The disclosure provides methods for directed self-assembly (DSA) of a block co-polymer (BCP). In one embodiment, a method includes: forming an oxide spacer along each of a first sidewall and a second sidewall of a cavity in a semiconductor substrate; forming a neutral layer between the oxide spacers and along a bottom of the cavity; and removing the oxide spacers to expose the first and second sidewalls and a portion of the bottom of the cavity adjacent the first and second sidewalls.
摘要:
After formation of a template layer over a neutral polymer layer, a self-assembling block copolymer material is applied and self-assembled. The template layer includes a first linear portion, a second linear portion that is shorter than the first linear portion, and blocking template structures having a greater width than the second linear portion. The self-assembling block copolymer material is phase-separated into alternating lamellae in regions away from the widthwise-extending portion. The blocking template structures perturb, and cause termination of, the lamellae. A cavity parallel to the first and second linear portions and terminating in self-alignment to the blocking template structures is formed upon selective removal of a polymeric block component. The pattern of the cavity can be inverted and transferred into the material layer to form fins having different lengths.