公开(公告)号：US20200212074A1

公开(公告)日：2020-07-02

申请号：US16816776

申请日：2020-03-12

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  G09G3/36 ,  G02F1/1343

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

公开(公告)号：US20200006568A1

公开(公告)日：2020-01-02

申请号：US16565760

申请日：2019-09-10

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Isao SUZUMURA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L27/146 ,  H01L29/423

Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

公开(公告)号：US20170323906A1

公开(公告)日：2017-11-09

申请号：US15479392

申请日：2017-04-05

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Isao SUZUMURA ,  Hidekazu MIYAKE

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78693

Abstract: The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The invention provides a display device including a substrate having a display area in which pixels are formed. The pixels include a first TFT made of a TAOS. The drain of the first TFT is formed of first LTPS 112. The source of the first TFT is formed of second LTPS 113. The first LTPS 112 is connected to a first electrode 106 via a first through-hole 108 formed in an insulating film 105 covering the first TFT. The second LTPS 113 is connected to a second electrode 107 via a second through-hole 108 formed in the insulating film 105 covering the first TFT.

公开(公告)号：US20160209719A1

公开(公告)日：2016-07-21

申请号：US14990201

申请日：2016-01-07

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Arichika ISHIDA ,  Hidekazu MIYAKE ,  Hiroto MIYAKE ,  lsao SUZUMURA

IPC: G02F1/1362 ,  H01L29/786 ,  G02F1/1368 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/136218 ,  G02F2001/13685 ,  G02F2202/10 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/7869

Abstract: According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.

Abstract translation: 根据一个实施例，显示装置包括绝缘基板，薄膜晶体管，其包括形成在绝缘基板上的层上的半导体层，至少部分地与半导体层重叠的栅电极，以及第一电极和第二电极 与半导体层电连接的电极，以及形成在薄膜晶体管和绝缘基板之间的遮光层，至少部分地与半导体层重叠，遮光层与栅电极电连接。

公开(公告)号：US20150070641A1

公开(公告)日：2015-03-12

申请号：US14480804

申请日：2014-09-09

Applicant: Japan Display Inc.

Inventor： Norihiro UEMURA ,  Hidekazu MIYAKE ,  Isao SUZUMURA ,  Yohei YAMAGUCHI ,  Toshiki KANEKO

IPC: G02F1/1337 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/133788 ,  G02F1/136209 ,  G02F2001/133388

Abstract: To maintain good operation of a peripheral circuit using an oxide thin film transistor in a liquid crystal display panel to which photo alignment is applied, the liquid crystal display panel includes: a transparent substrate provided with an oxide thin film transistor in the periphery of a pixel portion in which pixel electrodes are arranged, to control the pixel electrodes; and an alignment film to align liquid crystal provided in the pixel portion. The alignment film is subjected to photo alignment treatment by ultraviolet irradiation. Further, an ultraviolet absorbing layer is provided so as to cover the oxide thin film transistor. For example, an alignment film is used for the ultraviolet absorbing layer to absorb the ultraviolet light for the photo aliment treatment of the alignment film, in the peripheral circuit portion for controlling the pixel electrodes, thereby preventing the threshold voltage of the oxide thin film transistor from shifting.

Abstract translation: 为了在使用光取向的液晶显示面板中使用氧化物薄膜晶体管来维持外围电路的良好的操作，液晶显示面板包括：透明基板，在像素的周边设置有氧化物薄膜晶体管 配置像素电极的部分，以控制像素电极; 以及用于对准设置在像素部分中的液晶的取向膜。 通过紫外线照射对取向膜进行光取向处理。 此外，设置紫外线吸收层以覆盖氧化物薄膜晶体管。 例如，在用于控制像素电极的外围电路部分中，使用取向膜用于紫外线吸收层吸收用于对准膜的光电解处理的紫外光，从而防止氧化物薄膜晶体管的阈值电压 从转移。

公开(公告)号：US20250063767A1

公开(公告)日：2025-02-20

申请号：US18939825

申请日：2024-11-07

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI ,  Kazufumi WATABE ,  Tomoyuki ARIYOSHI ,  Osamu KARIKOME ,  Ryohei TAKAYA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/40 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

公开(公告)号：US20230081420A1

公开(公告)日：2023-03-16

申请号：US17983481

申请日：2022-11-09

Applicant: Japan Display Inc.

Inventor： Isao SUZUMURA ,  Kazufumi WATABE ,  Yoshinori ISHII ,  Hidekazu MIYAKE ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/51 ,  H01L29/24 ,  G02F1/1368 ,  G02F1/133 ,  G02F1/1362 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

公开(公告)号：US20220375967A1

公开(公告)日：2022-11-24

申请号：US17831747

申请日：2022-06-03

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1333 ,  H01L29/417

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

公开(公告)号：US20220149204A1

公开(公告)日：2022-05-12

申请号：US17584481

申请日：2022-01-26

Applicant: Japan Display Inc.

Inventor： Yohei YAMAGUCHI

IPC: H01L29/786 ,  H01L29/66

Abstract: A display device includes a metal layer composed of multiple layers including a lowermost layer lower in an ionization tendency than a middle layer, the lowermost layer being in contact with and on the oxide semiconductor layer. Each channel region is interposed between a corresponding one of the first electrodes and a corresponding one of the second electrodes, constituting a corresponding one of the thin film transistors. The oxide semiconductor layer is continuous between a pair of channel regions included in an adjacent pair of thin film transistors. The metal layer is continuous between a pair of first electrodes included in the adjacent pair of thin film transistors.

公开(公告)号：US20210391359A1

公开(公告)日：2021-12-16

申请号：US17459423

申请日：2021-08-27

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Isao SUZUMURA ,  Akihiro HANADA ,  Yohei YAMAGUCHI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.