公开(公告)号：US06237714B1

公开(公告)日：2001-05-29

申请号：US09514685

申请日：2000-02-28

申请人： Young S. Lee

发明人： Young S. Lee

IPC分类号： H04R5500

CPC分类号： A61F11/008 ,  H04R5/0335

摘要： The present invention is comprised of a headband (25) and one or more sound collectors (30, 75). The sound collectors (30, 75) collect sound waves and reflect toward the wearer's ears for louder reception. Some variations to the present invention can have one or more sound collectors (30, 75) that are parabolic in shape so the sound reflected off the collector surface is better focused toward the ear. Moreover, as an additional variation, one or more sound collectors (30, 75) can have a plurality of parabolic impressions (105) on the sound collector's inner surface (85) for better sound collection.

摘要翻译： 本发明包括头带（25）和一个或多个收集器（30,75）。 收音器（30,75）收集声波，并向佩戴者的耳朵反射以进行更大的接收。 本发明的一些变型可以具有抛物面形状的一个或多个收集器（30,75），使得从收集器表面反射的声音更好地朝向耳朵聚焦。 此外，作为附加变化，一个或多个收集器（30,75）可以​​在收集器的内表面（85）上具有多个抛物线印象（105），以便更好地收集声音。

公开(公告)号：US6082486A

公开(公告)日：2000-07-04

申请号：US243339

申请日：1999-02-01

申请人： Young S. Lee

发明人： Young S. Lee

IPC分类号： H04R1/10 ,  H04R55/00

CPC分类号： A61F11/008 ,  H04R5/0335

摘要： The present invention is comprised of a headband 25 and one or more sound collectors (30, 75). The sound collectors (30, 75) collect sound waves and reflect toward the wearer's ears for louder reception. Some variations to the present invention can have one or more sound collectors (30, 75) that is parabolic in shape so the sound reflected off the collector surface is better focused toward the ear. Moreover, as an additional variation, one or more sound collectors (30, 75) can have one or more parabolic impressions (105) on the sound collector's inner surface (85) for better sound collection.

摘要翻译： 本发明包括头带25和一个或多个收集器（30,75）。 收音器（30,75）收集声波，并向佩戴者的耳朵反射以进行更大的接收。 本发明的一些变型可以具有抛物面形状的一个或多个收集器（30,75），使得从集电器表面反射的声音更好地朝向耳朵聚焦。 此外，作为另外的变体，一个或多个收集器（30,75）可以​​在收集器的内表面（85）上具有一个或多个抛物线印象（105），以更好地收集声音。

公开(公告)号：US5185798A

公开(公告)日：1993-02-09

申请号：US663950

申请日：1991-03-08

申请人： Hiromi Hamada ,  Kazuya Hirano ,  Young S. Lee

发明人： Hiromi Hamada ,  Kazuya Hirano ,  Young S. Lee

IPC分类号： G07F7/08 ,  G06K17/00 ,  G06K19/073 ,  G06K19/12 ,  G07F7/10

CPC分类号： G07F7/1008 ,  G06K17/0022 ,  G06K19/073 ,  G06K19/12 ,  G06Q20/341 ,  G06Q20/355 ,  G06Q20/3672 ,  G06Q20/3676 ,  G07F7/082

摘要： An IC card includes, in addition to an ordinary data recording processing circuit, an IC chip area including an encrypting circuit, and a magnetic or optical data recording unit mounted thereon. Those items of data at an initialization and final transaction times are recorded in the magnetic or optical data recording unit while a predetermined encryption is made in cooperation with the IC chip area and the terminal for initialization and terminal for transaction. When a data item to be recorded n the IC chip area in the IC card is destroyed, data items recorded on the magnetic or optical data recording area are decrypted to check if the recorded data items are true. If yes, these data items are restored in a new card.

公开(公告)号：US08808563B2

公开(公告)日：2014-08-19

申请号：US13439079

申请日：2012-04-04

申请人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

发明人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC分类号： B44C1/22 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

公开(公告)号：US20140033248A1

公开(公告)日：2014-01-30

申请号：US13559685

申请日：2012-07-27

申请人： Andrew J. Aftelak ,  Young S. Lee ,  Venugopal Vasudevan ,  Jehan Wickramasuriya

发明人： Andrew J. Aftelak ,  Young S. Lee ,  Venugopal Vasudevan ,  Jehan Wickramasuriya

IPC分类号： G06Q30/02 ,  H04N21/80

CPC分类号： G06Q30/0242 ,  H04H60/31 ,  H04H60/63 ,  H04H2201/30 ,  H04N21/2668 ,  H04N21/44204 ,  H04N21/44222 ,  H04N21/4756 ,  H04N21/4784 ,  H04N21/6582 ,  H04N21/812

摘要： Disclosed are methods and apparatus for including an insert (e.g., an advertisement) in multimedia content. The method comprises receiving, by a receiving module, one or more indications, each indication being an indication that a consumer intends to consume, at some time in the future, the multimedia content. Using the indications, a value of a metric is then determined. The metric is dependent upon the number of received indications or one or more attributes of consumers whom the indications indicate intend to consume the multimedia content. An insert is then selected depending on the determined value for the metric. The selected insert is then included in the multimedia content.

摘要翻译： 公开了用于在多媒体内容中包括插入（例如，广告）的方法和装置。 该方法包括由接收模块接收一个或多个指示，每个指示是消费者在将来的某个时间期间消费多媒体内容的指示。 使用指示，然后确定度量的值。 该度量取决于接收到的指示的数量或者指示消费多媒体内容的消费者的一个或多个属性。 然后根据度量的确定值来选择插入。 所选择的插入物然后被包括在多媒体内容中。

公开(公告)号：US20140011206A1

公开(公告)日：2014-01-09

申请号：US13984244

申请日：2012-02-08

申请人： Keith E. Latham ,  Young S. Lee ,  Catherine A. VandeVoort

发明人： Keith E. Latham ,  Young S. Lee ,  Catherine A. VandeVoort

IPC分类号： C12Q1/68

CPC分类号： C12Q1/6881 ,  C12Q1/6876 ,  C12Q2600/158

摘要： A method for evaluating the quality of mammalian oocytes comprises determining the expression level of one or more of the genes ACPP, AQP11, CCDC126, CLU, CYP11 A1, CYP19A1, EGR3, FN1, FOSL2, GMNN, HRAS, HSD3B2, HS-D17B1, HSD11B2, HSDL1, IGF1, IGFBP4, IGFBP5, IRS1, KCNK3, KLF6, NEK6, SMAD7 or STC1 in a test sample derived from a cumulus cell or granulosa cell associated with the oocyte, and comparing the expression level of said at least one marker gene expression in the sample with the expression level in a control. Differential expression of the gene between the sample and the control is indicative of the quality of the oocyte.

摘要翻译： 用于评估哺乳动物卵母细胞质量的方法包括确定一个或多个基因ACPP，AQP11，CCDC126，CLU，CYP11A1，CYP19A1，EGR3，FN1，FOSL2，GMNN，HRAS，HSD3B2，HS-D17B1， HSD1B2，HSDL1，IGF1，IGFBP4，IGFBP5，IRS1，KCNK3，KLF6，NEK6，SMAD7或STC1在源自与卵母细胞相关的卵丘细胞或颗粒细胞的测试样品中，并比较所述至少一种标记基因 表达式在样本中与控件中的表达水平。 样品和对照之间基因的差异表达表明卵母细胞的质量。

公开(公告)号：US20130045605A1

公开(公告)日：2013-02-21

申请号：US13448541

申请日：2012-04-17

申请人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

发明人： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/31116

摘要： A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。 含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

公开(公告)号：US07811411B2

公开(公告)日：2010-10-12

申请号：US11200431

申请日：2005-08-09

申请人： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh ,  Muhammad M. Rasheed

发明人： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh ,  Muhammad M. Rasheed

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32522 ,  H01J37/321

摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.

摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。 框架适于将RF线圈支撑在适当位置。 界面材料设置在框架和处理室的侧壁之间并与之热接触。 界面材料的导热率为4.0W / mK以上。

公开(公告)号：US07745350B2

公开(公告)日：2010-06-29

申请号：US12204523

申请日：2008-09-04

申请人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

发明人： Anchuan Wang ,  Young S. Lee ,  Manoj Vellaikal ,  Jason Thomas Bloking ,  Jin Ho Jeon ,  Hemant P. Mungekar

IPC分类号： H01L21/311 ,  H01L21/3065

CPC分类号： C23C16/045 ,  C23C16/4408 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/76229

摘要： Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.

摘要翻译： 公开了在设置在基板处理室中的基板上沉积氧化硅膜的方法。 基板在相邻的凸起表面之间形成间隙。 氧化硅膜的第一部分使用高密度等离子体工艺沉积在衬底上并在间隙内。 此后，将氧化硅膜的沉积的第一部分的一部分回蚀刻。 这包括使卤素前体通过第一导管从卤素前体源流到基底处理室，从卤素前体形成高密度等离子体，并且在该部分被回蚀后终止流动卤素前体。 此后，卤素清除剂流到基板处理室以与基板处理室中的残留卤素反应。 此后，使用高密度等离子体处理，在氧化硅膜的第一部分和间隙内沉积第二部分氧化硅膜。

公开(公告)号：US07651587B2

公开(公告)日：2010-01-26

申请号：US11202043

申请日：2005-08-11

申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert T. Chen ,  Jason T. Bloking ,  Irene Chou ,  Steven H. Kim ,  Young S. Lee ,  Ellie Y. Yieh

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。