公开(公告)号：US20120329254A1

公开(公告)日：2012-12-27

申请号：US13595797

申请日：2012-08-27

Applicant: Heng-Kuang Lin ,  Pei-Chin Chiu ,  Jen-Inn Chyi ,  Han-Chieh Ho ,  Clement Hsingjen Wann ,  Chih-Hsin Ko ,  Cheng-Hsien Wu

Inventor： Heng-Kuang Lin ,  Pei-Chin Chiu ,  Jen-Inn Chyi ,  Han-Chieh Ho ,  Clement Hsingjen Wann ,  Chih-Hsin Ko ,  Cheng-Hsien Wu

IPC: H01L21/20

CPC classification number: H01L29/205 ,  B82Y10/00 ,  H01L21/8252 ,  H01L27/085 ,  H01L27/0883 ,  H01L27/092 ,  H01L29/122 ,  H01L29/42316 ,  H01L29/42356 ,  H01L29/66462 ,  H01L29/7783

Abstract: An integrated circuit structure includes a substrate and a first and a second plurality of III-V semiconductor layers. The first plurality of III-V semiconductor layers includes a first bottom barrier over the substrate; a first channel layer over the first bottom barrier; and a first top barrier over the first channel layer. A first field-effect transistor (FET) includes a first channel region, which includes a portion of the first channel layer. The second plurality of III-V semiconductor layers is over the first plurality of III-V semiconductor layers and includes a second bottom barrier; a second channel layer over the second bottom barrier; and a second top barrier over the second channel layer. A second FET includes a second channel region, which includes a portion of the second channel layer.

Abstract translation: 集成电路结构包括基板和第一和第二多个III-V半导体层。 所述第一多个III-V半导体层包括在所述衬底上的第一底部阻挡层; 在第一底部屏障上的第一通道层; 以及第一通道层上的第一顶部势垒。 第一场效应晶体管（FET）包括第一沟道区，其包括第一沟道层的一部分。 第二多个III-V半导体层在第一多个III-V半导体层之上，并且包括第二底部屏障; 在第二底部屏障上的第二通道层; 以及在第二通道层上的第二顶部阻挡层。 第二FET包括第二沟道区，其包括第二沟道层的一部分。

公开(公告)号：US20120328234A1

公开(公告)日：2012-12-27

申请号：US13293228

申请日：2011-11-10

Applicant: Hung-Chih Lu ,  Jen-Inn Chyi

Inventor： Hung-Chih Lu ,  Jen-Inn Chyi

IPC: G02B6/125

CPC classification number: G02B6/124 ,  G02B6/1228

Abstract: A low-loss optical coupling apparatus includes a silicon-on-insulator wafer, a silicon dioxide layer, a taper waveguide, a channel waveguide and a thick-film silicon dioxide layer. The silicon-on-insulator wafer is formed with a silicon substrate. The silicon dioxide layer is provided on the silicon substrate. The taper waveguide comprises a slab region formed on the silicon dioxide layer and a waveguide region formed on the slab region. An end of a chip is connected to an end of the waveguide region. The channel waveguide is formed on the slab region and connected to another end of the waveguide region. The thick-film silicon dioxide layer extends on the taper waveguide and covers the entire waveguide region.

Abstract translation: 低损耗光耦合装置包括绝缘体上硅晶片，二氧化硅层，锥形波导，通道波导和厚膜二氧化硅层。 绝缘体上硅晶片由硅衬底形成。 二氧化硅层设置在硅衬底上。 锥形波导包括形成在二氧化硅层上的平板区域和形成在板区域上的波导区域。 芯片的一端连接到波导区域的一端。 通道波导形成在平板区域上，并连接到波导区域的另一端。 厚膜二氧化硅层在锥形波导上延伸并覆盖整个波导区域。

公开(公告)号：US20110272719A1

公开(公告)日：2011-11-10

申请号：US12776834

申请日：2010-05-10

Applicant: Peng-Ren Chen ,  Hsueh-Hsing Liu ,  Jen-Inn Chyi

Inventor： Peng-Ren Chen ,  Hsueh-Hsing Liu ,  Jen-Inn Chyi

IPC: H01L33/32

CPC classification number: H01L33/14 ,  H01L33/04

Abstract: The present invention discloses an LED structure, wherein an N-type current spreading layer is interposed between N-type semiconductor layers to uniformly distribute current flowing through the N-type semiconductor layer. The N-type current spreading layer includes at least three sub-layers stacked in a sequence of from a lower band gap to a higher band gap, wherein the sub-layer having the lower band gap is near the substrate, and the sub-layer having the higher band gap is near the light emitting layer. Each sub-layer of the N-type current spreading layer is expressed by a general formula InxAlyGa(1-x-y)N, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.

Abstract translation: 本发明公开了一种LED结构，其中N型电流扩展层插入在N型半导体层之间以均匀地分布流过N型半导体层的电流。 N型电流扩展层包括从低带隙到较高带隙的顺序堆叠的至少三个子层，其中具有较低带隙的子层在衬底附近，并且子层 具有较高带隙的发光层靠近发光层。 N型电流扩展层的每个子层由通式In x Al y Ga（1-x-y）N表示，其中0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1和0＆nlE; x + y＆nlE;

公开(公告)号：US08048786B2

公开(公告)日：2011-11-01

申请号：US12263555

申请日：2008-11-03

Applicant: Jen-Inn Chyi ,  Guan-Ting Chen ,  Hsueh-Hsing Liu

Inventor： Jen-Inn Chyi ,  Guan-Ting Chen ,  Hsueh-Hsing Liu

IPC: H01L21/20

CPC classification number: H01L21/0237 ,  C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

Abstract: The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved.

Abstract translation: 本发明提供一种制造含有氮化镓（GaN）的单晶衬底的方法，包括以下步骤。 首先，在主体基板上形成多个含有GaN的岛。 接下来，使用包含GaN的多个岛作为掩模来蚀刻衬底并形成不均匀的主体衬底。 然后，在不均匀的主体衬底上进行外延，使含有GaN的岛尺寸增长并且合并成含有GaN的连续单晶膜。 最后，从不均匀的主体衬底上分离含有GaN的单晶膜，得到含有GaN的单晶衬底。 根据本发明，可以节省加工时间，提高成品率。

公开(公告)号：US20100295017A1

公开(公告)日：2010-11-25

申请号：US12851607

申请日：2010-08-06

Applicant: Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L33/04 ,  H01L33/02 ,  H01L33/30

CPC classification number: H01L33/10 ,  H01L33/20

Abstract: The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Abstract translation: 本发明公开了一种发光二极管（LED）元件及其制造方法，其可以提高LED的光提取效率，其中蚀刻基板以获得具有倾斜的自然晶体面的池，并且LED外延结构选择性地 形成在盆地内。 由此，得到具有多个倾斜的LED元件。 通过倾斜，全内反射的概率降低，LED的光提取效率得到提升。

公开(公告)号：US20100068872A1

公开(公告)日：2010-03-18

申请号：US12263555

申请日：2008-11-03

Applicant: Jen-Inn Chyi ,  Guan-Ting Chen ,  Hsueh-Hsing Liu

Inventor： Jen-Inn Chyi ,  Guan-Ting Chen ,  Hsueh-Hsing Liu

IPC: H01L21/205

CPC classification number: H01L21/0237 ,  C30B25/02 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

Abstract: The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved.

Abstract translation: 本发明提供一种制造含有氮化镓（GaN）的单晶衬底的方法，包括以下步骤。 首先，在主体基板上形成多个含有GaN的岛。 接下来，使用包含GaN的多个岛作为掩模来蚀刻衬底并形成不均匀的主体衬底。 然后，在不平坦的主体衬底上进行外延，使含有GaN的岛尺寸增长并且合并成含有GaN的连续单晶膜。 最后，从不均匀的主体衬底上分离含有GaN的单晶膜，得到含有GaN的单晶衬底。 根据本发明，可以节省加工时间，提高成品率。

公开(公告)号：US20090159910A1

公开(公告)日：2009-06-25

申请号：US11963558

申请日：2007-12-21

Applicant: Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng LIN ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L21/306 ,  H01L33/00

CPC classification number: H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

公开(公告)号：US07445949B2

公开(公告)日：2008-11-04

申请号：US10710843

申请日：2004-08-06

Applicant: Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Hung-Cheng Lin ,  Jen-Inn Chyi ,  Guan-Ting Chen

IPC: H01L21/00

CPC classification number: H01S5/22 ,  H01S5/0425 ,  H01S5/2214

Abstract: A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.

Abstract translation: 提供一种制造半导体激光器件的方法。 首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。 此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。 在第二掩模层上形成第三掩模层。 暴露的第二掩模层被去除。 使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。 去除第三掩模层和剩余的第二掩模层以形成脊结构。 在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。 导电层形成在外延结构上，使得其与突出区域的顶表面接触。

公开(公告)号：US20070298592A1

公开(公告)日：2007-12-27

申请号：US11514332

申请日：2006-09-01

Applicant: Jen-Inn Chyi ,  Guan-Ting Chen

Inventor： Jen-Inn Chyi ,  Guan-Ting Chen

IPC: H01L21/20

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B25/04 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02664

Abstract: A gallium nitride substrate is originally grown above a silicon substrate. The present invention easily separates the gallium nitride substrate from the silicon substrate. And the separation is done with a simple etching so that the cost is low.

Abstract translation: 氮化镓衬底最初在硅衬底上生长。 本发明容易将氮化镓衬底与硅衬底分离。 并且通过简单的蚀刻进行分离，从而成本低。

公开(公告)号：US07227192B2

公开(公告)日：2007-06-05

申请号：US10815091

申请日：2004-03-31

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L29/22

CPC classification number: H01L33/507 ,  H01L25/0756 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Abstract translation: 发光装置包括：发光单元，包括多个第一连接焊盘;基板，包括多个第二连接焊盘;以及多个导电凸块，其将所述发光单元的第一连接焊盘连接到 基底基板的第二连接焊盘。 在制造过程中，执行回流处理以将导电凸块接合到第一和第二连接焊盘。 发光单元被配置为在施加电流时发射第一光辐射，并且基底基板被配置为当被第一光辐射刺激时发射第二光辐射。