摘要:
The disclosure relates to an optical system, such as an illumination system or a projection objective of a microlithographic projection exposure apparatus, including such an optical system having a polarization-influencing optical arrangement which permits enhanced flexibility in affording a desired polarization distribution.
摘要:
An illumination system of a microlithographic projection exposure apparatus includes a beam deflection array including a number beam deflection elements, for example mirrors. Each beam deflection element is adapted to deflect an impinging light beam by a deflection angle that is variable in response to control signals. The light beams reflected from the beam deflection elements produce spots in a system pupil surface. The number of spots illuminated in the system pupil surface during an exposure process, during which a mask is imaged on a light sensitive surface, is greater than the number of beam deflection elements. This may be accomplished with the help of a beam multiplier unit that multiplies the light beams reflected from the beam deflection elements. In another embodiment the beam deflecting elements are controlled such that the irradiance distribution produced in the system pupil surface changes between two consecutive light pulses of an exposure process.
摘要:
The disclosure relates to an EUV microlithography projection exposure apparatus having an exposure light source for producing radiation in a first spectral range from 5 nm-15 nm, and a heat light source for producing radiation in a second spectral range from 1-50 μm. The apparatus also includes an optical system having a first group of mirrors for guiding radiation from the first spectral range along a light path such that each mirror in the first group can have a first associated intensity distribution applied to it in the first spectral range during operation of the exposure light source. The heat light source is arranged such that at least one mirror in the first group can have a second associated intensity distribution in the second spectral range applied to it during operation of the heat light source. The first intensity distribution differs from the second intensity distribution essentially by a position-independent factor.
摘要:
The invention relates to a projection system, comprising a radiation source, an illumination system operable to illuminate a structured mask, and a projection objective for projecting an image of the mask structure onto a light-sensitive substrate, wherein said projection system comprises an optical system comprising an optical axis or a preferred direction given by the direction of a light beam propagating through the optical system; the optical system comprising a temperature compensated polarization-modulating optical element described by coordinates of a coordinate system, wherein one preferred coordinate of the coordinate system is parallel to the optical axis or parallel to said preferred direction; said temperature compensated polarization-modulating optical element comprising a first and a second polarization-modulating optical element, the first and/or the second polarization-modulating optical element comprising solid and/or liquid optically active material and a profile of effective optical thickness, wherein the effective optical thickness varies at least as a function of one coordinate different from the preferred coordinate of the coordinate system, in addition or alternative the first and/or the second polarization-modulating optical element comprises solid and/or liquid optically active material, wherein the effective optical thickness is constant as a function of at least one coordinate different from the preferred coordinate of the coordinate system; wherein the first polarization-modulating optical element comprises optically active material with a specific rotation of opposite sign compared to the optically active material of the second polarization-modulating optical element.
摘要:
An illumination system of a microlithographic projection exposure apparatus has a pupil surface and an essentially flat arrangement of desirably individually drivable beam deviating elements for variable illumination of the pupil surface. Each beam deviating element allows deviation of a projection light beam incident on it to be achieved as a function of a control signal applied to the beam deviating element. A measurement illumination instrument directs a measurement light beam, independent of the projection light beams, onto a beam deviating element. A detector instrument records the measurement light beam after deviation by the beam deviating element. An evaluation unit determines the deviation of the projection light beam from measurement signals provided by the detector instrument.
摘要:
An optical element for use in an illumination optical unit of an EUV microlithography projection exposure apparatus includes a plurality of reflective facet elements. Each reflective facet element has at least one reflective surface. In this case, at least one facet element is arranged in a manner rotatable about a rotation axis. The rotation axis intersects the at least one reflective surface of the facet element. With such an optical element, it is possible to alter the direction and/or the intensity of at least part of the illumination radiation within the illumination optical unit in a simple manner.
摘要:
A polarization-modulating optical element formed of an optically active crystal material has a thickness profile where the thickness, as measured in the direction of the optical axis, varies over the area of the optical element. The polarization-modulating optical element has the effect that the plane of oscillation of a first linearly polarized light ray and the plane of oscillation of a second linearly polarized light ray are rotated, respectively, by a first angle of rotation and a second angle of rotation, with the first angle of rotation and the second angle of rotation being different from each other.
摘要:
An illumination system of a microlithographic projection exposure apparatus, as well as related systems, methods and components are disclosed. The illumination system can include a polarization manipulator configured to variably adjust a change in the polarization state of light impinging thereon. The illumination system can also include a mirror arrangement having a plurality of mirror elements that are displaceable independently of each other to alter an angle distribution of the light reflected by the mirror arrangement. A change in the intensity distribution caused by the polarization manipulator in a plane of the projection exposure apparatus can be at least partially compensated by the mirror arrangement.
摘要:
An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm2. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.
摘要:
An optical system, in particular of a microlithographic projection exposure apparatus, includes an optical system axis and a polarization-influencing optical arrangement, wherein said arrangement has a polarization-influencing optical element which includes an optically active material having an optical crystal axis and is of a thickness profile which varies in the direction of said optical crystal axis, and a position manipulator for manipulation of the position of said polarization-influencing optical element, wherein the polarization manipulator is adapted to cause rotation of the polarization-influencing optical element about an axis of rotation, wherein said axis of rotation is arranged at an angle of 90°±5° relative to the optical system axis.