Method for making a conductive film/plate exibiting electric anisotropy
    31.
    发明授权
    Method for making a conductive film/plate exibiting electric anisotropy 有权
    制造导电膜/板的方法,提高电各向异性

    公开(公告)号:US08646175B2

    公开(公告)日:2014-02-11

    申请号:US12826582

    申请日:2010-06-29

    Abstract: A method for making a conductive film exhibiting electric anisotropy comprises forming a nanomaterial on a substrate, the nanomaterial having a cluster of interconnected nanounits, each of which being substantially transverse to the substrate and having one end bonded to the substrate. The method further includes stretching the nanounits along a first direction to remove the nanomaterial from the substrate so as to form a conductive film having strings of interconnected nanounits, where the nanounits of the strings substantially extend in the first direction. A conductive plate and a method for making the same is also disclosed, where the method further comprises attaching the conductive film to a second substrate.

    Abstract translation: 制造具有电各向异性的导电膜的方法包括在衬底上形成纳米材料,所述纳米材料具有互连的纳米单元簇,每个纳米单元基本上横向于衬底并且具有一个端部结合到衬底。 该方法还包括沿着第一方向拉伸纳米单元以从衬底去除纳米材料,以便形成具有相互连接的纳米单元串的导电膜,其中串的纳米单元基本上沿第一方向延伸。 还公开了导电板及其制造方法,其中所述方法还包括将导电膜附着到第二基板。

    Circuit board connecting structure and display device comprising the same
    33.
    发明申请
    Circuit board connecting structure and display device comprising the same 审中-公开
    电路板连接结构和包括它的显示装置

    公开(公告)号:US20100097772A1

    公开(公告)日:2010-04-22

    申请号:US12589230

    申请日:2009-10-19

    Abstract: A display device includes a circuit board connecting structure. The circuit board connecting structure includes a first circuit board, a soldering layer, and a second circuit board. The first circuit board includes a baseboard and a plurality of parallel elongate first electrodes defined at a predetermined area. The second circuit board includes a plurality of parallel elongate second electrodes positioned at the predetermined area. The second electrodes are electrically connected to the corresponding first electrodes via the soldering layer. A space defined by the projection of the second electrodes to the baseboard of the first circuit board is filled in by the soldering layer.

    Abstract translation: 显示装置包括电路板连接结构。 电路板连接结构包括第一电路板,焊接层和第二电路板。 第一电路板包括基板和限定在预定区域的多个平行细长的第一电极。 第二电路板包括位于预定区域的多个平行细长的第二电极。 第二电极通过焊接层电连接到对应的第一电极。 通过焊接层填充由第二电极向第一电路板的基板的突起限定的空间。

    Electro-wetting display device
    35.
    发明申请
    Electro-wetting display device 有权
    电润湿显示装置

    公开(公告)号:US20090027317A1

    公开(公告)日:2009-01-29

    申请号:US12220525

    申请日:2008-07-25

    CPC classification number: G09G3/3433 G02B26/005 G09G3/348 G09G2300/08

    Abstract: An exemplary electro-wetting display (EWD) device includes an upper substrate, a lower substrate opposite to the upper substrate, a plurality of side walls interposed between the upper and lower substrates and cooperating with the upper and lower substrates to form a plurality of pixel units, a first polar liquid disposed in the pixel units, a second, colored, non-polar liquid disposed in the pixel units and being immiscible with the first liquid, and a plurality of scanning lines disposed on the lower substrate and parallel to and spaced apart from each other for providing scanning signals to the pixel units. Each of the pixel units corresponds to at least part of a corresponding previous scanning line.

    Abstract translation: 示例性电润湿显示器(EWD)装置包括上基板,与上基板相对的下基板,插入在上基板和下基板之间的多个侧壁,并与上基板和下基板配合以形成多个像素 单元,设置在像素单元中的第一极性液体,设置在像素单元中并与第一液体不混溶的第二有色非极性液体,以及设置在下基板上并平行并间隔开的多个扫描线 彼此之间用于向像素单元提供扫描信号。 每个像素单元对应于对应的先前扫描线的至少一部分。

    Structure of in-plane switching mode LCD with improved aperture ratio of pixel region and process for producing same
    36.
    发明授权
    Structure of in-plane switching mode LCD with improved aperture ratio of pixel region and process for producing same 有权
    具有提高像素区域的开口率的面内切换模式LCD的结构及其制造方法

    公开(公告)号:US06721026B2

    公开(公告)日:2004-04-13

    申请号:US09846462

    申请日:2001-05-01

    CPC classification number: G02F1/134363

    Abstract: A process for forming an in-plane switching mode liquid crystal display (IPS-LCD), which defines pixel portions of the common and data electrodes by the same photo-masking and lithography procedure, is disclosed. Accordingly, the misalignment can be avoid. An in-plane switching mode liquid crystal display (IPS-LCD) is also disclosed. The IPS-LCD includes a storage capacitor consisting of storage-capacitor portions of the common and data electrode structures, which is disposed outside the pixel region so as to enhance the aperture ratio of the pixel region.

    Abstract translation: 公开了通过相同的光掩模和光刻工艺来形成公共和数据电极的像素部分来形成平面内切换模式液晶显示器(IPS-LCD)的工艺。 因此,可以避免不对准。 还公开了一种面内切换模式液晶显示器(IPS-LCD)。 IPS-LCD包括由公共数据电极结构的存储电容器部分组成的存储电容器,其设置在像素区域的外部,以增强像素区域的开口率。

    Repair structure and method for fabricating the same

    公开(公告)号:US06642973B2

    公开(公告)日:2003-11-04

    申请号:US09935101

    申请日:2001-08-22

    CPC classification number: G02F1/136259 G02F1/136209 G02F2001/136263

    Abstract: A repair structure for repairing data lines and scan lines comprised in a thin film transistor-liquid crystal display (TFT-LCD) is provided. The repair structure includes a first conducting repair structure formed simultaneously with a gate conducting structure of the thin film transistor-liquid crystal display, an insulating layer formed on the first conducting repair structure, and a second conducting repair structure formed on the insulating layer simultaneously with a data conducting structure of the thin film transistor-liquid crystal display and connected with the data conducting structure, wherein a plurality of overlap regions having the insulating layer between the fist conducting repair structure and the second conducting repair structure are formed, wherein when the data conducting structure positioned in the overlap regions is broken, the insulating layer in the overlap regions is destroyed to make electric connection between the first conducting repair structure and the second conducting repair structure.

    Method of fabricating cup-shape cylindrical capacitor of high density DRAMs
    38.
    发明授权
    Method of fabricating cup-shape cylindrical capacitor of high density DRAMs 有权
    制造高密度DRAM的杯形圆柱形电容器的方法

    公开(公告)号:US06403418B2

    公开(公告)日:2002-06-11

    申请号:US09551535

    申请日:2000-04-18

    CPC classification number: H01L28/91 H01L21/3143 H01L21/31604 H01L27/10855

    Abstract: A method of fabricating cup shape cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells is disclosed. The cup shape capacitor shape is achieved by first depositing a first polysilicon layer on a silicon substrate; a third dielectric layer is then formed overlaying the first polysilicon layer, and defined third dielectric crowns by the conventional lithography and etching techniques; a second polysilicon layer is deposited overlaying the third dielectric crowns and first polysilicon layer; the first polysilicon and second polysilicon layers are then vertically anisotropically etchback to define storage nodes of the cylindrical capacitors; the third dielectric crowns are removed; finally, the capacitor dielectric layer and the polysilicon top plate of the capacitor are formed to complete the cup shape cylindrical capacitor formation for high density DRAM applications.

    Abstract translation: 公开了一种制造高密度动态随机存取存储器(DRAM)单元的杯形圆柱形电容器的方法。 杯状电容器形状通过首先在硅衬底上沉积第一多晶硅层来实现; 然后通过常规的光刻和蚀刻技术形成覆盖第一多晶硅层和限定的第三介电冠的第三介电层; 沉积覆盖第三介电冠和第一多晶硅层的第二多晶硅层; 然后第一多晶硅和第二多晶硅层垂直各向异性回蚀以限定圆柱形电容器的存储节点; 去除第三介质冠; 最后,电容器的电容器电介质层和多晶硅顶板形成为完成用于高密度DRAM应用的杯形圆柱形电容器形成。

    Tri-layer process for forming TFT matrix of LCD with reduced masking steps
    39.
    发明授权
    Tri-layer process for forming TFT matrix of LCD with reduced masking steps 有权
    用于以降低的掩蔽步骤形成LCD的TFT矩阵的三层工艺

    公开(公告)号:US06387740B1

    公开(公告)日:2002-05-14

    申请号:US09627142

    申请日:2000-07-24

    Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

    Abstract translation: 公开了用于形成用于液晶显示器的薄膜晶体管矩阵的简化三层工艺。 通过使用背面曝光技术,可以省略用于图案化蚀刻停止层的掩模步骤。 在衬底的前侧形成包括栅电极和扫描线的有源区,并在所得结构上依次施加蚀刻停止层和光致抗蚀剂层,通过从背面曝光 基质。 一部分光致抗蚀剂被有源区域遮蔽而不被曝光,从而形成具有类似于有源区形状的蚀刻停止结构,而没有任何光掩模和光刻工艺。 因此,上述自对准效果允许减少一个掩模步骤,从而简化处理。

    Method for fabricating a semiconductor capacitor
    40.
    发明授权
    Method for fabricating a semiconductor capacitor 有权
    半导体电容器的制造方法

    公开(公告)号:US06337173B2

    公开(公告)日:2002-01-08

    申请号:US09208452

    申请日:1998-12-10

    CPC classification number: H01L28/92 H01L21/76213 H01L27/10852

    Abstract: A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.

    Abstract translation: 一种在半导体衬底上制造电容器电极的方法包括以下步骤:在半导体衬底上形成导电层; 在所述导电层上形成光致抗蚀剂层; 通过干涉曝光步骤图案化光致抗蚀剂层; 并使用图案化的光致抗蚀剂层作为掩模图案化导电层,从而形成电容器电极。

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