公开(公告)号：US07326941B2

公开(公告)日：2008-02-05

申请号：US11209476

申请日：2005-08-22

申请人： Jiong Chen ,  Nicholas R. White

发明人： Jiong Chen ,  Nicholas R. White

IPC分类号： H01J37/317 ,  H01J37/08 ,  H01J37/147

CPC分类号： H01J49/30 ,  H01J37/05 ,  H01J37/3171

摘要： This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

摘要翻译： 本发明公开了一种具有多种工作模式的离子注入装置。 它具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 本发明还公开了一种双路束线，其中第二路径包括并入能量过滤的减速系统。 本发明公开了一种离子注入方法，其中注入模式可以从目标的一维扫描切换到二维扫描，并且从简单的路径切换到具有减速的s形路径。

公开(公告)号：US06918351B2

公开(公告)日：2005-07-19

申请号：US10133140

申请日：2002-04-26

申请人： Jiong Chen ,  Zhimin Wan

发明人： Jiong Chen ,  Zhimin Wan

IPC分类号： H01J37/317 ,  C23C16/00 ,  H01G37/317

CPC分类号： H01J37/3171 ,  H01J2237/0041

摘要： This invention discloses an ion implantation apparatus that has an ion source and an ion extraction device for extracting an ion beam therefrom. The ion implantation apparatus includes an ion beam sweeping-and-deflecting device disposed immediately next to the ion extraction device. The ion implantation apparatus further includes a magnetic analyzer for guiding the ion beam passed through the deflecting-and-sweeping device. The mass analyzer is also used for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. The sweeping-and-deflecting device is applied to deflect the ion beam to project through the magnetic mass analyzer and the mass slit for sweeping the ion beam over a surface of the substrate to carry out an ion implantation.

摘要翻译： 本发明公开了一种具有离子源和离子提取装置的离子注入装置，用于从其中提取离子束。 离子注入装置包括紧邻离子提取装置设置的离子束扫掠和偏转装置。 离子注入装置还包括用于引导穿过偏转扫掠装置的离子束的磁分析器。 质量分析仪还用于选择具有特定质荷比的离子以通过质量狭缝投射到基底上。 施加扫掠和偏转装置以使离子束偏转穿过磁性质量分析器和质量狭缝，以将离子束扫过衬底的表面以进行离子注入。

公开(公告)号：US06865065B1

公开(公告)日：2005-03-08

申请号：US10054373

申请日：2002-01-22

申请人： Jiong Chen ,  Jihliang Chen ,  Jianmin Qiao

发明人： Jiong Chen ,  Jihliang Chen ,  Jianmin Qiao

IPC分类号： C23C14/48 ,  C23C14/50 ,  H01L21/683 ,  H01L21/687 ,  H05F23/00

CPC分类号： H01L21/6831 ,  C23C14/48 ,  C23C14/50 ,  H01J37/34 ,  H01J2237/20 ,  H01J2237/31701 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  Y10T137/87209

摘要： A method and system for processing wafers is disclosed. According to one embodiment (100) a chuck system (102) may be situated opposite to an input source (104). A chuck system (102) may apply a force (e.g., mechanical and/or electromagnetic) that deforms a substrate (108). Once deformed, essentially all of a substrate (108) may be oriented at a predetermined angle (e.g., 90°) with respect to an input source (104).

摘要翻译： 公开了一种用于处理晶片的方法和系统。 根据一个实施例（100），卡盘系统（102）可以位于与输入源（104）相对的位置。 卡盘系统（102）可以施加使基底（108）变形的力（例如机械和/或电磁）。 一旦变形，基本上所有的衬底（108）可以相对于输入源（104）以预定角度（例如，90°）定向。

公开(公告)号：US06204508B1

公开(公告)日：2001-03-20

申请号：US09130662

申请日：1998-08-07

申请人： Jiong Chen ,  Ronald A. Capodilupo ,  Scott Barusso ,  Philip J. Ring ,  Kui Jin

发明人： Jiong Chen ,  Ronald A. Capodilupo ,  Scott Barusso ,  Philip J. Ring ,  Kui Jin

IPC分类号： H01J37317

CPC分类号： H01J1/16 ,  H01J27/022 ,  H01J2237/31701

摘要： A filament (18) for an ion implanter ion source or plasma shower is provided comprising first and second legs (20a, 20b) and a thermally emissive central portion (40) having ends connected, respectively, to the first and second legs. Preferably, the legs (20a, 20b) are constructed from tantalum (Ta), and the thermally emissive portion (40) is constructed of tungsten (W). The thermally emissive portion is coiled substantially along the entire length thereof and formed in the shape of a generally closed loop, such as a toroid. The toroid is comprised of two toroid halves (40a, 40b) coiled in opposite directions. The toroid halves are constructed of a plurality of filament strands (42, 44, 46) twisted together along substantially the entire length thereof. The coils of the toroid are capable of establishing closed loop magnetic field lines (B) therein when electrical current flows through the thermally emissive portion. The closed loop magnetic field lines (B) confine electrons (E) emitted from the surface of the thermally emissive portion within the confines of the coils.

摘要翻译： 提供了用于离子注入离子源或等离子体淋浴器的灯丝（18），其包括分别连接到第一和第二支腿的端部的第一和第二支腿（20a，20b）和热发射中心部分（40）。 优选地，腿（20a，20b）由钽（Ta）构成，并且热发射部分（40）由钨（W）构成。 热发射部分基本上沿着其整个长度盘绕并且形成为大致闭合的环路的形状，例如环形线圈。 环形线圈由在相反方向盘绕的两个环形半部（40a，40b）组成。 环形半部由沿其大致整个长度扭绞在一起的多个细丝股线（42,44,46）构成。 当电流流过热发射部分时，环形线圈的线圈能够在其中建立闭环磁场线（B）。 闭环磁场线（B）限制从线圈内的热发射部分的表面发射的电子（E）。

公开(公告)号：US5703375A

公开(公告)日：1997-12-30

申请号：US691467

申请日：1996-08-02

申请人： Jiong Chen ,  Victor M. Benveniste

发明人： Jiong Chen ,  Victor M. Benveniste

IPC分类号： C23C14/48 ,  H01J37/02 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/026 ,  H01J2237/0041 ,  H01J2237/31701

摘要： Method and apparatus for maintaining an ion beam along a beam path from an ion source to an ion implantation station where workpieces are treated with the ion beam. An ion beam neutralizer is positioned upstream from the ion treatment station and includes confinement structure which bounds the ion beam path. An electron source positioned within the confinement structure emits electrons into the ion beam. An array of magnets supported by the confinement structure creates a magnetic field which tends to confine the electrons moving within the confinement structure. An interior magnetic filter field is created inside the confinement structure by a plurality of axially elongated filter rods having encapsulated magnets bounding the ion beam and oriented generally parallel to the ion beam path. This interior magnetic field confines higher energy electrons from leaving the ion beam path and permits lower energy electrons to drift along the ion beam.

摘要翻译： 用于将离子束沿着从离子源到离子注入工位的束路保持离子束的方法和装置，其中用离子束处理工件。 离子束中和器位于离子处理站的上游，并且包括界定离子束路径的约束结构。 位于限制结构内的电子源将电子发射到离子束中。 由限制结构支撑的磁体阵列产生趋向于限制在限制结构内移动的电子的磁场。 通过多个轴向细长的过滤棒在限制结构内部产生内部磁性过滤器场，所述过滤棒具有包围离子束并且大致平行于离子束路径定向取向的封装的磁体。 该内部磁场限制较高能量的电子离开离子束路径，并允许较低能量的电子沿离子束漂移。

公开(公告)号：US08570976B2

公开(公告)日：2013-10-29

申请号：US12197412

申请日：2008-08-25

申请人： Xuezeng Pan ,  Jun Guan ,  Lingdi Ping ,  Jiong Chen ,  Defeng Li

发明人： Xuezeng Pan ,  Jun Guan ,  Lingdi Ping ,  Jiong Chen ,  Defeng Li

IPC分类号： H04W4/00 ,  H04L12/66 ,  H04L12/28

CPC分类号： H04W36/0016 ,  H04W8/085 ,  H04W8/26 ,  H04W48/16 ,  H04W80/04

摘要： A method and system for fast handover in hierarchical mobile IPv6 includes: a mobile node which transmits a proxy route request message to a previous access router of the mobile node according to a handover expectation provided by the link layer, the previous access router transmits a network prefix information of a new access router of the mobile node to the mobile node; the mobile node which generates new care-of address according to the network prefix information; after the mobile node moves to a target network, an optimistic duplicate address detection is performed on the care-of address. The disclosure can simplify the handover procedure of hierarchical mobile IPV6 of the mobile node, reduce the signaling interaction in handover process, and shorten handover delay.

摘要翻译： 分级移动IPv6中快速切换的方法和系统包括：根据由链路层提供的切换期望向移动节点的先前接入路由器发送代理路由请求消息的移动节点，先前接入路由器发送网络 移动节点的新接入路由器的前缀信息到移动节点; 所述移动节点根据所述网络前缀信息生成新的转交地址; 在移动节点移动到目标网络之后，对转交地址执行乐观的重复地址检测。 本发明可以简化移动节点的分层移动IPV6的切换过程，减少切换过程中的信令交互，缩短切换延迟。

公开(公告)号：US07902527B2

公开(公告)日：2011-03-08

申请号：US12194515

申请日：2008-08-19

申请人： Jiong Chen ,  Nicholas R. White

发明人： Jiong Chen ,  Nicholas R. White

IPC分类号： H01J37/317 ,  H01J37/28 ,  G21K1/00

CPC分类号： H01J37/08 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/083 ,  H01J2237/1503 ,  H01J2237/201 ,  H01J2237/31701

摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

摘要翻译： 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线，其中第二路径包括并入能量过滤的减速或加速系统。 最后，公开了离子注入的方法，其中注入模式可以从目标的一维扫描切换到二维扫描。

公开(公告)号：US07687784B2

公开(公告)日：2010-03-30

申请号：US12126312

申请日：2008-05-23

申请人： Nai-Yuan Cheng ,  Yun-Ju Yang ,  Cheng-Hui Shen ,  Junhua Hong ,  Jiong Chen ,  Tienyu Sheng ,  Linuan Chen

发明人： Nai-Yuan Cheng ,  Yun-Ju Yang ,  Cheng-Hui Shen ,  Junhua Hong ,  Jiong Chen ,  Tienyu Sheng ,  Linuan Chen

IPC分类号： H01J7/24 ,  H01J27/02 ,  H01J49/10

CPC分类号： H01J37/08 ,  H01J27/02 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/08 ,  H01J2237/24585

摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.

摘要翻译： 注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。 因此，浅离子注入的植入效率因此增加。

公开(公告)号：US07112789B2

公开(公告)日：2006-09-26

申请号：US11123924

申请日：2005-05-06

申请人： Nicholas R. White ,  Jiong Chen

发明人： Nicholas R. White ,  Jiong Chen

IPC分类号： H01J37/317 ,  H01J37/147 ,  H01J49/20

CPC分类号： H01J37/05 ,  H01J37/3171 ,  H01J49/30

摘要： The present invention provides a windowframe magnet having an aligned array of paired bedstead coils in mirror symmetry can bend a high aspect ratio ribbon ion beam through angle of not less than about 45 degrees and not more than about 110 degrees, and can focus it through a resolving slot for mass analysis. The long transverse axis of the beam, which can exceed 50% of the bend radius, is aligned with the generated magnetic field. The array of paired bedstead coils provide tight control of the fringing fields, present intrinsically good field uniformity, and enable a manufacture of much lighter construction than other magnet styles conventionally in use in the ion implantation industry.Within the system of the present invention, the ribbon beam is refocused with low aberration to achieve high resolving power, which is of significant value in the ion implantation industry. System size is further reduced by using a small ion source and a quadrupole lens to collimate the beam after expansion and analysis. There is no fundamental limit to the aspect ratio of the beam that can be analyzed.

摘要翻译： 本发明提供了一种窗框式磁体，其具有镜对称的成对的床架线圈的排列阵列，可以使高纵横比带状离子束通过不小于约45度且不超过约110度的角度弯曲，并且可以将其聚焦通过 解析槽进行质量分析。 可以超过弯曲半径的50％的梁的长横轴与产生的磁场对准。 成对的床架线圈阵列提供对边缘场的严格控制，本质上具有良好的场均匀性，并且能够制造比其他常规用于离子注入工业的磁体方式更轻的结构。 在本发明的系统中，带状光束以低像差重新聚焦，以实现高分辨能力，这在离子注入工业中具有重要价值。 通过使用小型离子源和四极透镜在扩展和分析后对光束进行准直，系统尺寸进一步降低。 对于可分析的梁的纵横比没有根本的限制。

公开(公告)号：US20060102080A1

公开(公告)日：2006-05-18

申请号：US11002598

申请日：2004-12-02

申请人： Gary Liu ,  Jiong Chen

发明人： Gary Liu ,  Jiong Chen

IPC分类号： C23C16/00

CPC分类号： H01L21/67236 ,  H01J2237/022 ,  H01J2237/31701

摘要： An ion implanter includes a wafer pad for supporting wafer thereon. The wafer pad is covered by a wafer coating having at least two layers with each layer composed of a different coating material. The top layer may be PTFE, PFA, FEP, or TEFLON polymer layer. The bottom layer may be a layer that is composed of a soft material with a low duometer reading or a vulcanized elastormer layer, or a silicon layer serving the function as a cushion layer. In general, the top layer is a protective layer that has a friction coefficient less than 0.6 and having a roughness less than 0.4 micron when operated in the implanter for loading and unloading the wafer from the wafer pad.

摘要翻译： 离子注入机包括用于在其上支撑晶片的晶片垫。 晶片垫被具有至少两层的晶片涂层覆盖，每层由不同的涂层材料组成。 顶层可以是PTFE，PFA，FEP或TEFLON聚合物层。 底层可以是由具有低笨重读数或硫化弹性层的软材料或用作缓冲层功能的硅层组成的层。 通常，顶层是在植入器中操作时摩擦系数小于0.6并具有小于0.4微米的粗糙度的保护层，用于从晶片垫装载和卸载晶片。