Electroless plating method and apparatus
    31.
    发明授权
    Electroless plating method and apparatus 有权
    化学镀方法及装置

    公开(公告)号:US07829152B2

    公开(公告)日:2010-11-09

    申请号:US11539155

    申请日:2006-10-05

    摘要: An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

    摘要翻译: 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘,使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统,其中响应于电镀溶液的输送,第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。

    Apparatus and method for confined area planarization
    32.
    发明授权
    Apparatus and method for confined area planarization 有权
    限制区域平面化的装置和方法

    公开(公告)号:US07598175B2

    公开(公告)日:2009-10-06

    申请号:US12129612

    申请日:2008-05-29

    IPC分类号: H01L21/302

    CPC分类号: H01L21/32115 C25F7/00

    摘要: A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

    摘要翻译: 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力,使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

    Method and system to separate and recycle divergent chemistries
    33.
    发明授权
    Method and system to separate and recycle divergent chemistries 失效
    分离和回收不同化学物质的方法和系统

    公开(公告)号:US07596886B1

    公开(公告)日:2009-10-06

    申请号:US10325556

    申请日:2002-12-18

    IPC分类号: F26B17/24 B08B3/04

    摘要: In one embodiment of the invention, an apparatus for collecting fluid within a wafer cleaning chamber is provided. The apparatus includes a rotatable annular manifold configured to support a wafer within an inner cavity defined by an inner surface of the annular manifold. The annular manifold includes a channel extending from an inner surface of the annular manifold to a floor of the annular manifold. The floor has at least one opening. The apparatus includes a catch basin having a base with at least one drain. The base has an inner sidewall and an outer sidewall extending therefrom. The catch basin is disposed under the annular manifold to capture fluid dispensed from the at least one opening of the floor of the annular manifold. A spin, rinse and dry module and a method for collecting a fluid delivered to the surface of a rotating wafer are provided.

    摘要翻译: 在本发明的一个实施例中,提供了一种用于在晶片清洁室内收集流体的装置。 该装置包括可旋转的环形歧管,其被配置为将晶片支撑在由环形歧管的内表面限定的内腔内。 环形歧管包括从环形歧管的内表面延伸到环形歧管的底板的通道。 地板至少有一个开口。 该装置包括具有至少一个排水口的底座的集水盆。 底座具有从其延伸的内侧壁和外侧壁。 所述挡水盆设置在所述环形歧管下方以捕获从所述环形歧管的所述底板的所述至少一个开口分配的流体。 提供旋转,漂洗和干燥模块以及用于收集输送到旋转晶片表面的流体的方法。

    Methods of proximity head brushing
    34.
    发明授权
    Methods of proximity head brushing 失效
    接近头刷的方法

    公开(公告)号:US07503983B2

    公开(公告)日:2009-03-17

    申请号:US12008552

    申请日:2008-01-11

    IPC分类号: B08B1/00

    CPC分类号: H01L21/67046 Y10S134/902

    摘要: A wafer preparation method is provided for producing a wet region and then a corresponding dry region on the wafer. Brushing produces the wet region on the wafer. As the brushing moves in a selected scan operation across the wafer, a generating operation forms a meniscus that follows the brushing and dries the wet region. The generating operation produces the meniscus at least partially surrounding the wet region scrubbed by the scrubbing. The controlled meniscus is formed by applying fluid to the surface of the wafer and simultaneously removing the fluid. The scan operations may be selected so the brushing scrubs the wet region and then the meniscus forms the dry region where the scrubbing took place. The scan operations include a radial scan, a linear scan, a spiral scan and a raster scan.

    摘要翻译: 提供晶片制备方法,用于在晶片上产生湿区域,然后产生相应的干燥区域。 刷子在晶片上产生湿区域。 当刷洗在晶片上的选择的扫描操作中移动时,产生操作形成跟随刷牙并干燥湿区域的弯液面。 生成操作产生弯液面,至少部分地围绕通过洗涤擦洗的湿区域。 受控弯液面通过将流体施加到晶片的表面并同时去除流体而形成。 可以选择扫描操作,使得刷洗擦洗湿区域,然后弯液面形成擦洗发生的干燥区域。 扫描操作包括径向扫描,线性扫描,螺旋扫描和光栅扫描。

    ENHANCED WAFER CLEANING METHOD
    36.
    发明申请
    ENHANCED WAFER CLEANING METHOD 失效
    增强清洗方法

    公开(公告)号:US20080169008A1

    公开(公告)日:2008-07-17

    申请号:US11954167

    申请日:2007-12-11

    IPC分类号: B08B13/00

    摘要: A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

    摘要翻译: 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后,在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

    Proximity brush unit apparatus and method
    37.
    发明授权
    Proximity brush unit apparatus and method 失效
    接近刷单元装置和方法

    公开(公告)号:US07353560B2

    公开(公告)日:2008-04-08

    申请号:US10742303

    申请日:2003-12-18

    IPC分类号: A47L7/00 G03D5/06 H01L21/00

    CPC分类号: H01L21/67046 Y10S134/902

    摘要: An apparatus is provided for producing a wet region and corresponding dry region on a wafer. A proximity brush unit delivers fluids with a rotatable brush to produce the wet region on the wafer. As the proximity brush unit moves in a selected scan method across the wafer, a plurality of ports produces the dry region on the wafer. Further, the rotatable brush disposed within the proximity brush unit can rotate via mechanical gears or electromagnetic levitation. The selected scan method that produces the wet region and the dry region moves the proximity brush unit in a variety of methods including a radial scan, a linear scan, a spiral scan and a raster scan. To further produce a dry region during the selected scan method, the plurality of ports disposed on the surface of the proximity brush unit is on the trailing edges of the proximity head unit and the wafer.

    摘要翻译: 提供了一种用于在晶片上产生湿区域和相应的干燥区域的装置。 接近刷单元用可旋转的刷子输送流体以在晶片上产生湿区域。 当接近刷单元以选定的扫描方法移动跨越晶片时,多个端口在晶片上产生干燥区域。 此外,设置在接近刷单元内的可旋转刷可以经由机械齿轮或电磁悬浮来旋转。 产生湿区域和干燥区域的选择的扫描方法以包括径向扫描,线性扫描,螺旋扫描和光栅扫描的各种方法移动接近刷单元。 为了在所选择的扫描方法期间进一步产生干燥区域,设置在接近刷单元表面上的多个端口位于邻近头单元和晶片的后缘。

    Distribution of energy in a high frequency resonating wafer processing system
    39.
    发明授权
    Distribution of energy in a high frequency resonating wafer processing system 有权
    在高频谐振晶片处理系统中的能量分布

    公开(公告)号:US07237564B1

    公开(公告)日:2007-07-03

    申请号:US10371679

    申请日:2003-02-20

    IPC分类号: B08B3/00 B06B1/06

    CPC分类号: B06B1/0622 Y10S134/902

    摘要: A transducer for use in an acoustic energy cleaner is provided. The transducer includes a resonator and a plurality of crystals bonded to a surface of the resonator. The plurality of crystals is configured to be bonded to the surface of the resonator in a staggered arrangement with respect to each other. In one embodiment, the plurality of crystals is bonded to the surface of the resonator in a horizontally staggered arrangement. In another embodiment, the plurality of crystals is bonded to the surface of the resonator in a vertically staggered arrangement.

    摘要翻译: 提供了一种用于声能清洁器的换能器。 换能器包括共振器和结合到谐振器表面的多个晶体。 多个晶体被配置为以彼此相互错开的布置结合到谐振器的表面。 在一个实施例中,多个晶体以水平交错布置结合到谐振器的表面。 在另一个实施例中,多个晶体以垂直交错布置结合到谐振器的表面。

    Method and apparatus for cleaning a wafer bevel edge and notch using a pin and an abrasive film cassette
    40.
    发明授权
    Method and apparatus for cleaning a wafer bevel edge and notch using a pin and an abrasive film cassette 有权
    使用销和研磨膜盒清洁晶圆斜面边缘和切口的方法和装置

    公开(公告)号:US07179154B1

    公开(公告)日:2007-02-20

    申请号:US11242705

    申请日:2005-10-03

    IPC分类号: B24B1/00 B24B7/00

    CPC分类号: B24B41/067 B24B9/065

    摘要: An apparatus for cleaning a semiconductor wafer edge is provided. The apparatus includes a film with an abrasive layer configured to contact the edge surface of a semiconductor substrate coated with a contaminant residue layer. A first reel having the film wound thereon and a second reel for receiving the film fed from the first reel are included. In one embodiment, a third reel configured to force the abrasive layer of the film against the edge surface of the semiconductor substrate so as to create an area of contact between the abrasive layer and the edge surface of the semiconductor substrate; and a pin that protrudes from to the top surface of the third reel. A system and method for cleaning a semiconductor wafer edge are also provided.

    摘要翻译: 提供了一种用于清洁半导体晶片边缘的装置。 该装置包括具有研磨层的膜,该研磨层配置成接触涂覆有污染物残留层的半导体衬底的边缘表面。 包括卷绕在其上的薄膜的第一卷轴和用于接收从第一卷轴供给的薄膜的第二卷轴。 在一个实施例中,第三卷轴被配置成迫使膜的研磨层抵靠半导体衬底的边缘表面,以便产生研磨层与半导体衬底的边缘表面之间的接触面积; 以及从第三卷轴的顶面突出的销。 还提供了用于清洁半导体晶片边缘的系统和方法。