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    PLASMA TREATMENT OF INSULATING MATERIAL
    31.
    发明申请
    PLASMA TREATMENT OF INSULATING MATERIAL 审中-公开
    绝缘材料等离子体处理

    公开(公告)号：US20080246124A1

    公开(公告)日：2008-10-09

    申请号：US11696262

    申请日：2007-04-04

    申请人： James Mathew ,  Prashant Raghu ,  Jaydeb Goswami

    发明人： James Mathew ,  Prashant Raghu ,  Jaydeb Goswami

    IPC分类号： H01L21/302 ,  H01L23/58

    CPC分类号： H01L21/76831 ,  H01L21/76814

    摘要： A method is disclosed which includes forming an opening in an insulating material, performing a plasma process to introduce nitrogen into a portion of the insulating material to thereby form a nitrogen-containing region at least on an inner surface of the opening, and, after forming the nitrogen-containing region, performing an etching process through the opening. A device is disclosed which includes an insulating material comprising a nitrogen-enhanced region that is proximate an opening that extends through the insulating material and a conductive structure positioned within the opening.

    摘要翻译： 公开了一种方法，其包括在绝缘材料中形成开口，执行等离子体处理以将氮气引入绝缘材料的一部分中，从而至少在开口的内表面上形成含氮区域，并且在形成之后 含氮区域，通过开口进行蚀刻处理。 公开了一种装置，其包括绝缘材料，该绝缘材料包括邻近延伸穿过绝缘材料的开口的氮增强区域和位于开口内的导电结构。

    Methods of etching polysilicon and methods of forming pluralities of capacitors
    32.
    发明申请
    Methods of etching polysilicon and methods of forming pluralities of capacitors 有权
    蚀刻多晶硅的方法和形成多个电容器的方法

    公开(公告)号：US20080090416A1

    公开(公告)日：2008-04-17

    申请号：US11580418

    申请日：2006-10-11

    申请人： Prashant Raghu ,  Vishwanath Bhat ,  Niraj Rana

    发明人： Prashant Raghu ,  Vishwanath Bhat ,  Niraj Rana

    IPC分类号： H01L21/302

    CPC分类号： H01L21/32134

    摘要： A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.

    摘要翻译： 蚀刻多晶硅的方法包括在有效从衬底上蚀刻多晶硅的条件下将包括多晶硅的衬底暴露于包含水，HF和至少一种导电金属氮化物Pt和Au的溶液中。 在一个实施例中，包括多晶硅的衬底第一区域和包括导电金属氮化物，Pt和Au中的至少一个的衬底第二区域暴露于包含水和HF的溶液中。 该溶液在曝光之前没有任何可检测的导电金属氮化物，Pt和Au。 至少一种至少一种在曝光时被蚀刻到溶液中。 然后，在蚀刻至少一些导电金属氮化物Pt和Au之前，以比第一区域多晶硅的任何蚀刻速率更快的速率从第一区域蚀刻多晶硅。

    Etch compositions and methods of processing a substrate
    33.
    发明申请
    Etch compositions and methods of processing a substrate 失效
    蚀刻组合物和处理基材的方法

    公开(公告)号：US20070023396A1

    公开(公告)日：2007-02-01

    申请号：US11191685

    申请日：2005-07-27

    申请人： Janos Fucsko ,  Grady Waldo ,  Joseph Wiggins ,  Prashant Raghu

    发明人： Janos Fucsko ,  Grady Waldo ,  Joseph Wiggins ,  Prashant Raghu

    IPC分类号： C09K13/00 ,  B44C1/22 ,  C03C15/00

    CPC分类号： C03C15/00 ,  C09K13/08

    摘要： The invention includes an etchant composition containing isopropyl alcohol and one or more of HF, NH4F and tetramethyl ammonium fluoride (TMAF). The invention encompasses a method of processing a substrate. A substrate is provided which has a first material containing at least one of polysilicon, monocrystalline silicon and amorphous silicon, and a second material. The substrate is exposed to an etch composition which comprises isopropyl alcohol and at least one of HF, NH4F and TMAF. The invention includes a method of processing a semiconductor construction including providing a construction which has a capacitor electrode material and an oxide material along at least a portion of the capacitor electrode material. At least some of the oxide material is removed by isotropic etching utilizing an etchant composition comprising isopropyl alcohol.

    摘要翻译： 本发明包括含有异丙醇和HF，NH 4 F和四甲基氟化铵（TMAF）中的一种或多种的蚀刻剂组合物。 本发明包括一种处理衬底的方法。 提供了具有包含多晶硅，单晶硅和非晶硅中的至少一种的第一材料和第二材料的衬底。 将衬底暴露于包含异丙醇和HF，NH 4 F和TMAF中的至少一种的蚀刻组合物。 本发明包括一种处理半导体结构的方法，包括提供沿电容器电极材料的至少一部分具有电容器电极材料和氧化物材料的结构。 使用包含异丙醇的蚀刻剂组合物通过各向同性蚀刻除去至少一些氧化物材料。

    Methods of forming capacitors
    34.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US08946043B2

    公开(公告)日：2015-02-03

    申请号：US13332816

    申请日：2011-12-21

    申请人： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    发明人： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC分类号： H01L21/02

    CPC分类号： H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

    摘要翻译： 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的单个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。

    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors
    35.
    发明申请
    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权
    多材料结构，半导体结构和形成电容器的方法

    公开(公告)号：US20140015097A1

    公开(公告)日：2014-01-16

    申请号：US13546927

    申请日：2012-07-11

    申请人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    发明人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    IPC分类号： H01L29/02 ,  H01L21/02

    CPC分类号： H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

    摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

    摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

    Methods of Forming Semiconductor Constructions
    36.
    发明申请
    Methods of Forming Semiconductor Constructions 有权
    形成半导体结构的方法

    公开(公告)号：US20120322266A1

    公开(公告)日：2012-12-20

    申请号：US13593373

    申请日：2012-08-23

    申请人： Prashant Raghu

    发明人： Prashant Raghu

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

    摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.

    摘要翻译： 本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。 蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。 本发明还包括从含钛电容器电极之间除去含钛晶须的方法。 这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

    Methods of forming capacitors
    38.
    发明授权
    Methods of forming capacitors 有权
    形成电容器的方法

    公开(公告)号：US07713813B2

    公开(公告)日：2010-05-11

    申请号：US11218229

    申请日：2005-08-31

    申请人： Prashant Raghu

    发明人： Prashant Raghu

    IPC分类号： H01L21/8242

    CPC分类号： H01L21/30604 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/91

    摘要： The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.

    摘要翻译： 本发明包括使用其中含有含磷和氧的化合物的蚀刻组合物从含钛容器结构中除去硅的方法。 蚀刻组合物可以例如包括氢氧化铵和四甲基氢氧化铵中的一种或两种。 本发明还包括从含钛电容器电极之间除去含钛晶须的方法。 这种去除可以例如通过使用氢氟酸，氟化铵，硝酸和过氧化氢中的一种或多种的蚀刻来实现。

    Transistor structures
    39.
    发明授权
    Transistor structures 有权
    晶体管结构

    公开(公告)号：US07659560B2

    公开(公告)日：2010-02-09

    申请号：US11716433

    申请日：2007-03-08

    申请人： Sanh D. Tang ,  Gordon A. Haller ,  Prashant Raghu ,  Ravi Iyer

    发明人： Sanh D. Tang ,  Gordon A. Haller ,  Prashant Raghu ,  Ravi Iyer

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66787

    摘要： A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.

    摘要翻译： 晶体管栅极形成方法包括在线路开口内形成金属层，并在金属层的开口内形成填充层。 填充层相对于金属层基本上可选择性地蚀刻。 晶体管结构包括线路开口，开口内的电介质层，开口内的电介质层上的金属层，以及开口内的金属层上的填充层。 如果填充层被金属层的增加的厚度代替，则金属层/填充层组合的内在特性小于否则会存在。 本发明至少应用于三维晶体管结构。