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    Critical dimension uniformity monitoring for extreme ultra-violet reticles
    32.
    发明授权
    Critical dimension uniformity monitoring for extreme ultra-violet reticles 有权

    公开(公告)号：US10288415B2

    公开(公告)日：2019-05-14

    申请号：US15826529

    申请日：2017-11-29

    Applicant: KLA-Tencor Corporation

    Inventor： Rui-fang Shi ,  Alex Pokrovskiy ,  Abdurrahman Sezginer ,  Weston L. Sousa

    IPC: G01B11/24 ,  G03F1/22 ,  G03F1/70 ,  G01B11/02 ,  G01N21/88

    Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

    TECHNIQUES AND SYSTEMS FOR MODEL-BASED CRITICAL DIMENSION MEASUREMENTS
    37.
    发明申请
    TECHNIQUES AND SYSTEMS FOR MODEL-BASED CRITICAL DIMENSION MEASUREMENTS 有权
    基于模型的关键尺寸测量的技术和系统

    公开(公告)号：US20170069080A1

    公开(公告)日：2017-03-09

    申请号：US15250649

    申请日：2016-08-29

    Applicant: KLA-Tencor Corporation

    Inventor： Abdurrahman Sezginer ,  Eric Vella ,  Balaji Ganapathy ,  Yanwei Liu

    IPC: G06T7/00 ,  G06T7/60

    CPC classification number: G06T7/0006 ,  G06T7/001 ,  G06T7/62 ,  G06T2207/10004 ,  G06T2207/10056 ,  G06T2207/30148

    Abstract: A reticle is inspected with an imaging system to obtain a measured image of a structure on the reticle, and the structure has an unknown critical dimension (CD). Using a model, a calculated image is generated using a design database that describes a pattern used to form the structure on the reticle. The model generates the calculated image based on: optical properties of reticle materials of the structure, a computational model of the imaging system, and an adjustable CD. A norm of a difference between the measured and calculated images is minimized by adjusting the adjustable CD and iteratively repeating the operation of generating a calculated image so as to obtain a final CD for the unknown CD of the structure. Minimizing the norm of the difference is performed simultaneously with respect to the adjustable CD and one or more uncertain parameters of the imaging system.

    Abstract translation: 用成像系统检查掩模版，以获得在光罩上的结构的测量图像，并且该结构具有未知的临界尺寸（CD）。 使用模型，使用描述用于在分划板上形成结构的图案的设计数据库生成计算图像。 该模型基于：结构的标线材料的光学性质，成像系统的计算模型和可调节的CD产生计算的图像。 通过调整可调节的CD并迭代地重复生成计算图像的操作以获得结构的未知CD的最终CD，使得测量和计算的图像之间的差异范围最小化。 相对于可调节CD和成像系统的一个或多个不确定参数同时实现差异范围的最小化。

    Reticle inspection using near-field recovery
    38.
    发明授权
    Reticle inspection using near-field recovery 有权
    使用近场恢复的标线检查

    公开(公告)号：US09478019B2

    公开(公告)日：2016-10-25

    申请号：US14702336

    申请日：2015-05-01

    Applicant: KLA-Tencor Corporation

    Inventor： Abdurrahman Sezginer ,  Rui-fang Shi

    IPC: G06T7/00 ,  G01N21/88 ,  G01N21/956 ,  G01N21/95

    CPC classification number: G06T7/00 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/8887 ,  G01N2021/95676 ,  G01N2201/06113 ,  G01N2201/10 ,  G01N2201/12 ,  G06T7/0008 ,  G06T7/001 ,  G06T2207/10056 ,  G06T2207/30148

    Abstract: Systems and methods for detecting defects on a reticle are provided. The embodiments include generating and/or using a data structure that includes pairs of predetermined segments of a reticle pattern and corresponding near-field data. The near-field data for the predetermined segments may be determined by regression based on actual image(s) of a reticle generated by a detector of a reticle inspection system. Inspecting a reticle may then include separately comparing two or more segments of a pattern included in an inspection area on the reticle to the predetermined segments and assigning near-field data to at least one of the segments based on the predetermined segment to which it is most similar. The assigned near-field data can then be used to simulate an image that would be formed for the reticle by the detector, which can be compared to an actual image generated by the detector for defect detection.

    Abstract translation: 提供了用于检测掩模版上的缺陷的系统和方法。 实施例包括生成和/或使用包括标线图案的预定片段对和对应的近场数据的数据结构。 用于预定段的近场数据可以通过基于由掩模版检查系统的检测器产生的掩模版的实际图像的回归来确定。 然后检查掩模版可以包括单独地将掩模版上的检查区域中包括的图案的两个或多个段与预定的段进行比较，并且基于其最大的预定段将近场数据分配给至少一个段 类似。 所分配的近场数据然后可以用于模拟由检测器为掩模版形成的图像，其可以与由检测器生成的用于缺陷检测的实际图像进行比较。

    APPARATUS AND METHODS FOR PREDICTING WAFER-LEVEL DEFECT PRINTABILITY
    39.
    发明申请
    APPARATUS AND METHODS FOR PREDICTING WAFER-LEVEL DEFECT PRINTABILITY 有权
    预测水平缺陷打印性的装置和方法

    公开(公告)号：US20160012579A1

    公开(公告)日：2016-01-14

    申请号：US14822571

    申请日：2015-08-10

    Applicant: KLA-Tencor Corporation

    Inventor： Rui-fang Shi ,  Abdurrahman Sezginer

    IPC: G06T7/00

    CPC classification number: G06T7/001 ,  G01N21/956 ,  G01N2021/95676 ,  G06T2207/10144 ,  G06T2207/10152 ,  G06T2207/30148

    Abstract: Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire images at different imaging configurations from each of the pattern areas of a calibration reticle. A reticle near field is recovered for each of the pattern areas of the calibration reticle based on the acquired images from each pattern area of the calibration reticle. Using the recovered reticle near field for the calibration reticle, a lithography model for simulating wafer images is generated based on the reticle near field. Images are then acquired at different imaging configurations from each of the pattern areas of a test reticle. A reticle near field for the test reticle is then recovered based on the acquired images from the test reticle. The generated model is applied to the reticle near field for the test reticle to simulate a plurality of test wafer images, and the simulated test wafer images are analyzed to determine whether the test reticle will likely result in an unstable or defective wafer.

    Abstract translation: 公开了用于限定光刻掩模版的方法和装置。 使用掩模版检查工具从校准掩模版的每个图案区域获取不同成像配置的图像。 基于从校准掩模版的每个图案区域获取的图像，对校准掩模版的每个图案区域恢复光栅近场。 使用恢复的光栅近场用于校准掩模版，基于掩模版近场产生用于模拟晶片图像的光刻模型。 然后以与测试掩模版的每个图案区域不同的成像配置获取图像。 然后根据获得的来自测试掩模版的图像来恢复用于测试掩模版的近距离掩模版。 将生成的模型应用于测试光罩的光栅近场，以模拟多个测试晶片图像，并分析模拟的测试晶片图像，以确定测试光罩是否可能导致晶片不稳定或缺陷。

    CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRAVIOLET RETICLES
    40.
    发明申请
    CRITICAL DIMENSION UNIFORMITY MONITORING FOR EXTREME ULTRAVIOLET RETICLES 有权
    极端超紫外线反应的关键尺寸均匀性监测

    公开(公告)号：US20150144798A1

    公开(公告)日：2015-05-28

    申请号：US14390834

    申请日：2013-04-16

    Applicant: KLA-Tencor Corporation

    Inventor： Rui-fang Shi ,  Alex Pokrovskiy ,  Abdurrahman Sezginer ,  Weston L. Sousa

    IPC: G01B11/24 ,  G01N21/88 ,  G01B11/02

    CPC classification number: G01B11/24 ,  G01B11/02 ,  G01B2210/56 ,  G01N21/8806 ,  G01N2201/06113 ,  G03F1/22 ,  G03F1/70

    Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

    Abstract translation: 公开了使用检查工具便利检查样品的方法和装置。 使用检查工具来获得来自EUV掩模版的图像或信号，其指定EUV掩模版之间的强度变化，并且将该强度变化转换为CD变化，其消除光斑校正CD变化，以产生临界尺寸均匀性 （CDU）图，而没有闪光校正CD变体。 这种去除的光斑校正CD变化源自用于制造EUV掩模版的设计数据，并且这种闪光校正CD变化通常被设计为补偿在光刻工艺期间在光刻工具的视场（FOV）上存在的闪光差异。 CDU图存储在一个或多个存储设备中和/或显示在例如检测工具或光刻系统的显示设备上。

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