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公开(公告)号：US20160003609A1
公开(公告)日：2016-01-07
申请号：US14790793
申请日：2015-07-02
Applicant: KLA-Tencor Corporation
CPC classification number: G03F7/7065 , G03F7/705 , H01L22/12
Abstract: Methods and systems for estimating values of parameters of interest of actual device structures based on optical measurements of nearby metrology targets are presented herein. High throughput, inline metrology techniques are employed to measure metrology targets located near actual device structures. Measurement data collected from the metrology targets is provided to a trained signal response metrology (SRM) model. The trained SRM model estimates the value of one or more parameters of interest of the actual device structure based on the measurements of the metrology target. The SRM model is trained to establish a functional relationship between actual device parameters measured by a reference metrology system and corresponding optical measurements of at least one nearby metrology target. In a further aspect, the trained SRM is employed to determine corrections of process parameters to bring measured device parameter values within specification.
Abstract translation: 本文介绍了基于邻近度量目标的光学测量来估计实际设备结构感兴趣参数值的方法和系统。 采用高吞吐量的在线测量技术来测量位于实际设备结构附近的测量目标。 从测量目标收集的测量数据提供给训练有素的信号响应计量（SRM）模型。 经过训练的SRM模型基于测量目标的测量值来估计实际设备结构的一个或多个感兴趣的参数的值。 训练SRM模型以建立由参考测量系统测量的实际设备参数与至少一个附近度量目标的对应光学测量之间的功能关系。 在另一方面，采用经过训练的SRM来确定过程参数的校正，以将测量的设备参数值置于规定范围内。
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公开(公告)号：US20140347666A1
公开(公告)日：2014-11-27
申请号：US14278224
申请日：2014-05-15
Applicant: KLA-Tencor Corporation
Inventor： Andrei Veldman , Andrei V. Shchegrov , Gregory Brady , Thaddeus Gerard Dziura , Stilian Ivanov Pandev , Alexander Kuznetsov
CPC classification number: G01N21/211 , G01B11/0625 , G01B11/0641 , G01B2210/56 , G01N21/9501 , G01N2021/213
Abstract: Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are predetermined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.
Abstract translation: 本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。 性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。 在一些示例中，度量目标参数被预先确定为实验设计（DOE）的一部分。 将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。 在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度数。 此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。
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33.发明申请公开(公告)号：US20140132948A1
公开(公告)日：2014-05-15
申请号：US14073538
申请日：2013-11-06
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov
IPC: G01B11/02
CPC classification number: G01B11/02 , G01B11/0641 , G01B11/065
Abstract: Methods and systems for achieving a small measurement box size specification across a set of metrology system parameters are presented. The small measurement box size specification is achieved by selectively constraining one or more of the sets of system parameters during measurement. A subset of measurement system parameters such as illumination wavelength, polarization state, polar angle of incidence, and azimuth angle of incidence is selected for measurement to maintain a smaller measurement box size than would otherwise be achievable if the full, available range of measurement system parameters were utilized in the measurement. In this manner, control of one or more factors that affect measurement box size is realized by constraining the measurement system parameter space. In addition, a subset of measurement signals may be selected to maintain a smaller measurement box size than would otherwise be achievable if all available measurement signals were utilized in the measurement.
Abstract translation: 提出了通过一组计量系统参数实现小型测量箱尺寸规格的方法和系统。 通过在测量期间选择性地约束一组或多组系统参数来实现小的测量箱尺寸规格。 选择诸如照明波长，偏振状态，极角入射角和入射角的测量系统参数的子集用于测量以保持比否则可以实现的更小的测量箱尺寸，如果全部可用的测量系统参数范围 用于测量。 以这种方式，通过约束测量系统参数空间来实现影响测量箱尺寸的一个或多个因素的控制。 此外，如果在测量中使用所有可用的测量信号，则可以选择测量信号的子集以保持比否则可实现的更小的测量箱尺寸。
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公开(公告)号：US10969328B2
公开(公告)日：2021-04-06
申请号：US16284950
申请日：2019-02-25
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Lawrence D. Rotter , David Y. Wang , Andrei Veldman , Kevin Peterlinz , Gregory Brady , Derrick A. Shaughnessy
Abstract: The system includes a modulatable illumination source configured to illuminate a surface of a sample disposed on a sample stage, a detector configured to detect illumination emanating from a surface of the sample, illumination optics configured to direct illumination from the modulatable illumination source to the surface of the sample, collection optics configured to direct illumination from the surface of the sample to the detector, and a modulation control system communicatively coupled to the modulatable illumination source, wherein the modulation control system is configured to modulate a drive current of the modulatable illumination source at a selected modulation frequency suitable for generating illumination having a selected coherence feature length. In addition, the present invention includes the time-sequential interleaving of outputs of multiple light sources to generate periodic pulse trains for use in multi-wavelength time-sequential optical metrology.
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35.发明申请公开(公告)号：US20200184372A1
公开(公告)日：2020-06-11
申请号：US16287523
申请日：2019-02-27
Applicant: KLA-Tencor Corporation
Inventor： Song Wu , Yin Xu , Andrei V. Shchegrov , Lie-Quan Lee , Pablo Rovira , Jonathan Madsen
IPC: G06N20/00 , G01Q30/04 , H01J37/26 , G01N23/201 , G01N21/95
Abstract: A metrology system is disclosed. In one embodiment, the metrology system includes a controller communicatively coupled to a reference metrology tool and an optical metrology tool, the controller including one or more processors configured to: generate a geometric model for determining a profile of a test HAR structure from metrology data from a reference metrology tool; generate a material model for determining one or more material parameters of a test HAR structure from metrology data from the optical metrology tool; form a composite model from the geometric model and the material model; measure at least one additional test HAR structure with the optical metrology tool; and determine a profile of the at least one additional test HAR structure based on the composite model and metrology data from the optical metrology tool associated with the at least one HAR test structure.
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Patent Agency Ranking
公开(公告)号：US10533848B2
公开(公告)日：2020-01-14
申请号：US16057498
申请日：2018-08-07
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Frank Laske , Nadav Gutman
Abstract: An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.
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公开(公告)号：US10352695B2
公开(公告)日：2019-07-16
申请号：US15230336
申请日：2016-08-05
Applicant: KLA-Tencor Corporation
Inventor： Thaddeus Gerard Dziura , Antonio Arion Gellineau , Andrei V. Shchegrov
IPC: G01B15/02 , G01N23/201 , G01N23/20 , G01N23/2055
Abstract: Methods and systems for characterizing dimensions and material properties of high aspect ratio, vertically manufactured devices using transmission, small-angle x-ray scattering (T-SAXS) techniques are described herein. Exemplary structures include spin transfer torque random access memory (STT-RAM), vertical NAND memory (V-NAND), dynamic random access memory (DRAM), three dimensional FLASH memory (3D-FLASH), resistive random access memory (Re-RAM), and PC-RAM. In one aspect, T-SAXS measurements are performed at a number of different orientations that are more densely concentrated near the normal incidence angle and less densely concentrated at orientations that are further from the normal incidence angle. In a further aspect, T-SAXS measurement data is used to generate an image of a measured structure based on the measured intensities of the detected diffraction orders. In another further aspect, a metrology system is configured to generate models for combined x-ray and optical measurement analysis.
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公开(公告)号：US10345095B1
公开(公告)日：2019-07-09
申请号：US14947510
申请日：2015-11-20
Applicant: KLA-Tencor Corporation
Inventor： Stilian Ivanov Pandev , Leonid Poslavsky , Dzmitry Sanko , Andrei V. Shchegrov
Abstract: Methods and systems for solving measurement models of complex device structures with reduced computational effort are presented. In some embodiments, a measurement signal transformation model is employed to compute transformed measurement signals from coarse measurement signals. The transformed measurement signals more closely approximate a set of measured signals than the coarse measurement signals. However, the coarse set of measured signals are computed with less computational effort than would be required to directly compute measurement signals that closely approximate the set of measured signals. In other embodiments, a measurement signal transformation model is employed to compute transformed measurement signals from actual measured signals. The transformed measurement signals more closely approximate the coarse measurement signals than the actual measured signals. Transformed measurement signals are subsequently used for regression, library generation, or other analyses typically employed as part of an effort to characterize structural, material, and process parameters in semiconductor manufacturing.
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公开(公告)号：US20180112968A1
公开(公告)日：2018-04-26
申请号：US15787789
申请日：2017-10-19
Applicant: KLA-Tencor Corporation
Inventor： Boxue Chen , Andrei Veldman , Alexander Kuznetsov , Andrei V. Shchegrov
IPC: G01B11/02 , G01B15/00 , G01N21/95 , G01N21/956 , G01N23/225 , G01N23/201
Abstract: Methods and systems for evaluating the geometric characteristics of patterned structures are presented. More specifically, geometric structures generated by one or multiple patterning processes are measured by two or more metrology systems in accordance with a hybrid metrology methodology. A measurement result from one metrology system is communicated to at least one other metrology systems to increase the measurement performance of the receiving system. Similarly, a measurement result from the receiving metrology system is communicated back to the sending metrology system to increase the measurement performance of the sending system. In this manner, measurement results obtained from each metrology system are improved based on measurement results received from other cooperating metrology systems. In some examples, metrology capability is expanded to measure parameters of interest that were previously unmeasurable by each metrology system operating independently. In other examples, measurement sensitivity is improved and parameter correlation is reduced.
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公开(公告)号：US20180061691A1
公开(公告)日：2018-03-01
申请号：US15688751
申请日：2017-08-28
Applicant: KLA-Tencor Corporation
Inventor： Prateek Jain , Daniel Wack , Kevin A. Peterlinz , Andrei V. Shchegrov , Shankar Krishnan
CPC classification number: H01L21/67253 , H01L22/10 , H01L22/12
Abstract: Methods and systems for performing in-situ, selective spectral reflectometry (SSR) measurements of semiconductor structures disposed on a wafer are presented herein. Illumination light reflected from a wafer surface is spatially imaged. Signals from selected regions of the image are collected and spectrally analyzed, while other portions of the image are discarded. In some embodiments, a SSR includes a dynamic mirror array (DMA) disposed in the optical path at or near a field plane conjugate to the surface of the semiconductor wafer under measurement. The DMA selectively blocks the undesired portion of wafer image. In other embodiments, a SSR includes a hyperspectral imaging system including a plurality of spectrometers each configured to collect light from a spatially distinct area of a field image conjugate to the wafer surface. Selected spectral signals associated with desired regions of the wafer image are selected for analysis.
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