Abstract:
Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.
Abstract:
Multiply patterned metrology targets and target design methods are provided to enable pitch walk measurements using overlay measurements. Multiply patterned structures having single features or spacers produced simultaneously and sharing a common pitch with the paired features or spacers are used to express pitch walk as a measurable overlay between the structures. For example, targets are provided which comprise a first multiply patterned structure having a single left-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers, and a second multiply patterned structure having a single right-hand feature or spacer produced simultaneously and sharing a common pitch with the respective paired features or spacers.
Abstract:
The present disclosure is directed to overlay metrology with targets including “disappearing” or sacrificial layers that leave no optical trace impacting OVL measurement when processed. In an embodiment, an overlay metrology target may include at least one overlay target structure inducing an optical characteristic and at least one secondary overlay target structure inducing a temporary optical characteristic. The at least one secondary overlay target structure being removable by a lithographic process and/or by etch or clean process, where removal of the at least one secondary overlay target structure removes the temporary optical characteristic. That is, the secondary target structure or “layer” leaves no optical trace impacting OVL measurement when removed, thereby allowing another target structure (e.g., a tertiary target structure or layer) to be printed in a region previously occupied by at least a portion of the secondary target structure.
Abstract:
Multi-layered targets, design files and design and production methods thereof are provided. The multi-layered targets comprise process layers arranged to have parallel segmentation features at specified regions, and target layer comprising target elements which are perpendicular to the parallel segmentation features of the process layers at the specified regions.
Abstract:
A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.
Abstract:
Alignment of multi-beam pattern tools includes generating a test pattern having multiple features with a multi-beam patterning tool, acquiring an image standard associated with a test pattern standard, acquiring an image of a portion of the test pattern, comparing the portion of the image of the test pattern to the image standard to identify one or more irregularities between the portion of the image of the test pattern and the image standard, and adjusting one or more beams of the multi-beam patterning tool based on the one or more identified irregularities between the portion of the image of the test pattern and the image standard.
Abstract:
Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.
Abstract:
Metrology methods and systems are provided, which measure metrology targets during the exposure stage using reflected or diffracted exposure illumination or additional simultaneous illumination having longer wavelengths than the exposure illumination, The metrology measurements are used to correct the lithographic process in a short loop, enabling realtime and even predictive error correction, The metrology methods, tools and systems also include defect detection during the exposure stage.
Abstract:
Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.