公开(公告)号：US09767986B2

公开(公告)日：2017-09-19

申请号：US14834991

申请日：2015-08-25

Applicant: KLA-Tencor Corporation

Inventor： David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Marcel Trimpl ,  Jingjing Zhang ,  Devis Contarato ,  Venkatraman Iyer

IPC: H01J37/244 ,  H01J37/28 ,  H01L31/00 ,  G01T1/24

CPC classification number: G01N30/72 ,  G01T1/24 ,  G06F19/00 ,  H01J37/244 ,  H01J37/28 ,  H01J49/02 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01L27/1464 ,  H01L27/14659 ,  H01L27/14661 ,  H01L31/00

Abstract: A scanning electron microscope incorporates a multi-pixel solid-state electron detector. The multi-pixel solid-state detector may detect back-scattered and/or secondary electrons. The multi-pixel solid-state detector may incorporate analog-to-digital converters and other circuits. The multi-pixel solid state detector may be capable of approximately determining the energy of incident electrons and/or may contain circuits for processing or analyzing the electron signals. The multi-pixel solid state detector is suitable for high-speed operation such as at a speed of about 100 MHz or higher. The scanning electron microscope may be used for reviewing, inspecting or measuring a sample such as unpatterned semiconductor wafer, a patterned semiconductor wafer, a reticle or a photomask. A method of reviewing or inspecting a sample is also described.

公开(公告)号：US09748294B2

公开(公告)日：2017-08-29

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US20160343532A1

公开(公告)日：2016-11-24

申请号：US15160505

申请日：2016-05-20

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden ,  Yinying Xiao-Li ,  Xuefeng Liu

IPC: H01J1/308 ,  H01L31/107 ,  H01J37/22 ,  H01L27/148 ,  H01J1/304 ,  H01J1/34 ,  H01L31/105 ,  H01L31/0216

Abstract: A photocathode utilizes an field emitter array (FEA) integrally formed on a silicon substrate to enhance photoelectron emissions, and a thin boron layer disposed directly on the output surface of the FEA to prevent oxidation. The field emitters are formed by protrusions having various shapes (e.g., pyramids or rounded whiskers) disposed in a two-dimensional periodic pattern, and may be configured to operate in a reverse bias mode. An optional gate layer is provided to control emission currents. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer. An optional external potential is generated between the opposing illuminated and output surfaces. An optional combination of n-type silicon field emitter and p-i-n photodiode film is formed by a special doping scheme and by applying an external potential. The photocathode forms part of sensor and inspection systems.

Abstract translation: 光电阴极利用整体形成在硅衬底上的场致发射阵列（FEA）来增强光电子发射，以及直接设置在FEA的输出表面上以防止氧化的薄硼层。 场发射体由具有以二维周期图案设置的各种形状（例如，金字塔或圆形晶须）的突起形成，并且可以被配置为以反向偏压模式操作。 提供可选的栅极层以控制发射电流。 在照明（顶部）表面上形成可选的第二硼层，并且在第二硼层上形成任选的抗反射材料层。 在相对的照明​​和输出表面之间产生可选的外部电位。 通过特殊的掺杂方案和施加外部电位形成n型硅场致发射体和p-i-n光电二极管膜的可选组合。 光电阴极形成传感器和检测系统的一部分。

公开(公告)号：US09461435B2

公开(公告)日：2016-10-04

申请号：US14688975

申请日：2015-04-16

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang

IPC: H01S3/10 ,  G02F1/35 ,  H01S3/091 ,  H01S3/00

CPC classification number: H01S3/10 ,  G02F1/3525 ,  H01S3/005 ,  H01S3/091

Abstract: Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam.

公开(公告)号：US09419407B2

公开(公告)日：2016-08-16

申请号：US14859122

申请日：2015-09-18

Applicant: KLA-Tencor Corporation

Inventor： Yujun Deng ,  J. Joseph Armstrong ,  Yung-Ho Alex Chuang ,  Vladimir Dribinski ,  John Fielden

IPC: G01J1/42 ,  H01S3/137 ,  G01J1/44 ,  H01S3/00 ,  H01S3/16 ,  G01J1/04

CPC classification number: H01S3/137 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/44 ,  G01J2001/4238 ,  G02F1/37 ,  H01S3/005 ,  H01S3/0057 ,  H01S3/0092 ,  H01S3/1611 ,  H01S3/1643 ,  H01S3/1671 ,  H01S2301/08

Abstract: A pulsed UV laser assembly includes a partial reflector or beam splitter that divides each fundamental pulse into two sub-pulses and directs one sub-pulse to one end of a Bragg grating and the other pulse to the other end of the Bragg grating (or another Bragg grating) such that both sub-pulses are stretched and receive opposing (positive and negative) frequency chirps. The two stretched sub-pulses are combined to generate sum frequency light having a narrower bandwidth than could be obtained by second-harmonic generation directly from the fundamental. UV wavelengths may be generated directly from the sum frequency light or from a harmonic conversion scheme incorporating the sum frequency light. The UV laser may further incorporate other bandwidth reducing schemes. The pulsed UV laser may be used in an inspection or metrology system.

Abstract translation: 脉冲UV激光器组件包括部分反射器或分束器，其将每个基本脉冲分成两个子脉冲，并将一个子脉冲引导到布拉格光栅的一端，将另一个脉冲引导到布拉格光栅的另一端（或另一个 布拉格光栅），使得两个子脉冲都被拉伸并接收相对（正和负）频率的线性调频脉冲。 两个延伸的子脉冲被组合以产生具有比通过直接从基波的二次谐波产生可以获得的窄带宽的和频光。 紫外波长可以直接从和频光或从包含和频光的谐波转换方案中产生。 UV激光器可以进一步并入其他带宽减小方案。 脉冲UV激光可用于检测或计量系统。

公开(公告)号：US09413134B2

公开(公告)日：2016-08-09

申请号：US14753275

申请日：2015-06-29

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang ,  J. Joseph Armstrong

IPC: H01S3/10 ,  H01S5/00 ,  H01S3/11 ,  G02F1/37 ,  H01S3/00 ,  C30B29/10 ,  C30B33/02 ,  G01N21/88 ,  G01N21/94 ,  G01N21/95 ,  C03B33/02 ,  C30B1/02 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  G02F1/35 ,  G02F1/355

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: A frequency-conversion crystal annealing process includes a first ramp-up period (e.g., increasing the crystal's temperature to a first set point in the range of 100° C. to 150° C. over about 2 hours), a first fixed temperature period (e.g., maintaining at the first set point for 10 to 20 hours), a second ramp-up period (e.g., increasing from the first set point to a second set point above 150° C. over about 1 hour or more), a second fixed period (e.g., maintaining at the second set point for 48 to 300 hours), and then a temperature ramp-down period (e.g., decreasing from the second set point to room temperature over about 3 hours). Transitions from the first and second fixed temperature periods are optionally determined by —OH bonds absorption levels that are measured using Fourier transform infrared spectroscopy, e.g., by monitoring the absorption of —OH bonds (including H2O) near 3580 cm−1 in the infra-red spectrum.

Abstract translation: 频率转换晶体退火处理包括第一斜坡上升​​周期（例如，在约2小时内将晶体的温度提高到在100℃至150℃的范围内的第一设定点），第一固定温度周期 （例如，在第一设定点保持10至20小时），第二加速时间段（例如，在大约1小时或更长时间内从第一设定点增加到高于150℃的第二设定点），a 第二固定时间（例如，在第二设定点保持48至300小时），然后温度降低时间（例如，从大约3小时的第二设定点降低到室温）。 从第一和第二固定温度周期的转变可任选地由使用傅立叶变换红外光谱法测量的-OH键吸收水平确定，例如通过监测基底内的3580cm-1附近的-OH键（包括H 2 O）的吸收， 红色光谱。

公开(公告)号：US20150299893A1

公开(公告)日：2015-10-22

申请号：US14753275

申请日：2015-06-29

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang ,  J. Joseph Armstrong

IPC: C30B1/02 ,  C30B29/14 ,  C30B29/30 ,  G02F1/355 ,  C30B29/22

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: A frequency-conversion crystal annealing process includes a first ramp-up period (e.g., increasing the crystal's temperature to a first set point in the range of 100° C. to 150° C. over about 2 hours), a first fixed temperature period (e.g., maintaining at the first set point for 10 to 20 hours), a second ramp-up period (e.g., increasing from the first set point to a second set point above 150° C. over about 1 hour or more), a second fixed period (e.g., maintaining at the second set point for 48 to 300 hours), and then a temperature ramp-down period (e.g., decreasing from the second set point to room temperature over about 3 hours). Transitions from the first and second fixed temperature periods are optionally determined by —OH bonds absorption levels that are measured using Fourier transform infrared spectroscopy, e.g., by monitoring the absorption of —OH bonds (including H2O) near 3580 cm−1 in the infra-red spectrum.

Abstract translation: 频率转换晶体退火处理包括第一斜坡上升​​周期（例如，在约2小时内将晶体的温度提高到在100℃至150℃的范围内的第一设定点），第一固定温度周期 （例如，在第一设定点保持10至20小时），第二加速时间段（例如，在大约1小时或更长时间内从第一设定点增加到高于150℃的第二设定点），a 第二固定时间（例如，在第二设定点保持48至300小时），然后温度降低时间（例如，从大约3小时的第二设定点降低到室温）。 从第一和第二固定温度周期的转变可任选地由使用傅立叶变换红外光谱法测量的-OH键吸收水平确定，例如通过监测基底内的3580cm-1附近的-OH键（包括H 2 O）的吸收， 红色光谱。

公开(公告)号：US20150222079A1

公开(公告)日：2015-08-06

申请号：US14688975

申请日：2015-04-16

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang

IPC: H01S3/10

CPC classification number: H01S3/10 ,  G02F1/3525 ,  H01S3/005 ,  H01S3/091

Abstract: Laser-induced damage in an optical material can be mitigated by creating conditions at which light absorption is minimized. Specifically, electrons populating defect energy levels of a band gap in an optical material can be promoted to the conduction band—a process commonly referred to as bleaching. Such bleaching can be accomplished using a predetermined wavelength that ensures minimum energy deposition into the material, ideally promoting electron to just inside the conduction band. In some cases phonon (i.e. thermal) excitation can also be used to achieve higher depopulation rates. In one embodiment, a bleaching light beam having a wavelength longer than that of the laser beam can be combined with the laser beam to depopulate the defect energy levels in the band gap. The bleaching light beam can be propagated in the same direction or intersect the laser beam.

Abstract translation: 可以通过产生光吸收最小化的条件来减轻光学材料中的激光诱导的损伤。 具体地说，填充光学材料中的带隙的缺陷能级的电子能够促进通常被称为漂白的传导带。 这样的漂白可以使用确保最小能量沉积到材料中的预定波长来实现，理想地促进电子刚好在导带内部。 在某些情况下，也可以使用声子（即热）激发来实现更高的人口流动率。 在一个实施例中，具有比激光束长的波长的波长的漂白光束可以与激光束组合以对带隙中的缺陷能级进行衰减。 漂白光束可以沿相同方向传播或与激光束相交。

公开(公告)号：US09097683B2

公开(公告)日：2015-08-04

申请号：US14507758

申请日：2014-10-06

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Dribinski ,  Yung-Ho Alex Chuang ,  J. Joseph Armstrong ,  John Fielden

IPC: H01S3/13 ,  G01N21/88 ,  H01S3/11 ,  H01S3/10 ,  H01S5/00 ,  G02F1/37 ,  H01S3/00 ,  C30B29/10 ,  C03B33/02 ,  G01N21/94 ,  G01N21/95 ,  G02F1/35 ,  G02F1/355

CPC classification number: H01S5/0092 ,  C03B33/02 ,  C30B1/02 ,  C30B29/10 ,  C30B29/14 ,  C30B29/22 ,  C30B29/30 ,  C30B33/02 ,  G01N21/88 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501 ,  G01N2201/06113 ,  G01N2201/0637 ,  G01N2201/068 ,  G02F1/353 ,  G02F1/3551 ,  G02F1/3553 ,  G02F1/37 ,  G02F2001/3505 ,  G02F2001/3507 ,  G02F2001/354 ,  G02F2202/20 ,  H01S3/0092 ,  H01S3/10 ,  H01S3/10038 ,  H01S3/10046 ,  H01S3/11

Abstract: An optical system for detecting contaminants and defects on a test surface includes an improved laser system for generating a laser beam and optics directing the laser beam along a path onto the test surface, and producing an illuminated spot thereon. A detector and ellipsoidal mirrored surface are also provided with an axis of symmetry about a line perpendicular to the test surface. In one embodiment, an optical system for detecting anomalies of a sample includes the improved laser system for generating first and second beams, first optics for directing the first beam of radiation onto a first spot on the sample, second optics for directing the second beam onto a second spot on the sample, with the first and second paths at different angles of incidence to the sample surface. In another embodiment, a surface inspection apparatus includes an illumination system configured to focus beams at non-normal incidence angles.

Abstract translation: 用于检测测试表面上的污染物和缺陷的光学系统包括用于产生激光束的改进的激光系统和将激光束沿着路径引导到测试表面上并在其上产生照明点的光学系统。 检测器和椭圆形镜面也具有围绕垂直于测试表面的线的对称轴。 在一个实施例中，用于检测样本异常的光学系统包括用于产生第一和第二光束的改进的激光系统，用于将第一辐射束引导到样品上的第一光点上的第一光学器件，用于将第二光束引导到 样品上的第二个点，第一和第二个路径与样品表面的入射角不同。 在另一个实施例中，表面检查装置包括被配置为以非正常入射角聚焦光束的照明系统。

公开(公告)号：US20140153596A1

公开(公告)日：2014-06-05

申请号：US13711593

申请日：2012-12-11

Applicant: KLA-TENCOR CORPORATION

Inventor： Yung-Ho Alex Chuang ,  Justin Dianhuan Liou ,  J. Joseph Armstrong ,  Yujun Deng

IPC: H01S3/10

CPC classification number: H01S3/005 ,  C23C16/00 ,  G02B17/00 ,  G02B17/0848 ,  G02B27/00 ,  G02B27/108 ,  H01S3/00 ,  H01S3/10

Abstract: A pulse multiplier includes a beam splitter and one or more mirrors. The beam splitter receives a series of input laser pulses and directs part of the energy of each pulse into a ring cavity. After circulating around the ring cavity, part of the pulse energy leaves the ring cavity through the beam splitter and part of the energy is recirculated. By selecting the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitter. This pulse multiplier can inexpensively reduce the peak power per pulse while increasing the number of pulses per second with minimal total power loss.

Abstract translation: 脉冲倍增器包括分束器和一个或多个反射镜。 分束器接收一系列输入激光脉冲并将每个脉冲的能量的一部分引导到环形腔中。 在环形腔周围循环后，部分脉冲能量通过分束器离开环形空腔，部分能量被再循环。 通过选择环腔光路长度，可以将输出系列激光脉冲的重复率设为输入重复率的倍数。 可以通过选择分束器的透射和反射系数来控制输出脉冲的相对能量。 该脉冲倍增器可以以最小的总功率损耗来降低每脉冲的峰值功率，同时增加每秒的脉冲数。