摘要:
In executing the opposing common inverse drive in an active matrix-type semiconductor display device, a gate bias is suppressed to be comparable with that of the conventional inverse drive to avoid a range in which the off current jumps up and, hence, to suppress the leakage of the stored electric charge, thereby to maintain an ON/OFF margin of the pixel TFTs. The gate bias applied to the pixel TFT is maintained to be near the customarily employed voltage to maintain a gate breakdown voltage, and the electric power is consumed in a decreased amount by the drive circuit as a whole, thereby to provide a novel drive circuit. In the semiconductor display device, a tristate buffer is used for a gate signal line drive circuit, and different buffer potentials are applied depending upon a frame in which the opposing common potential assumes a positive sign and a frame in which the opposing common potential assumes a negative sign, thereby to maintain an ON/OFF margin of the pixel TFTs. The voltage amplitude is decreased during the opposing common inverse drive.
摘要:
A driving circuit of a liquid crystal display device including a first insulating substrate on which a plurality of signal lines and a plurality of scan lines are disposed, and pixel transistors made of thin film transistors are disposed in matrix at intersection points of those lines; a second insulating substrate opposite to the first insulating substrate; and a liquid crystal held between the first and second insulating substrates, in which the driving circuit is disposed on the first insulating substrate; each of clock lines or base portions of the clock lines for supplying clock signals to the driving circuit is made of a two-layer structure of the same wiring material as a gate electrode of the thin film transistor and the same wiring material as a source electrode or drain electrode of the thin film transistor; and a wiring line crossing the clock lines or the base portions of the clock lines is made of a wiring line in the same layer as a black matrix covering the pixel transistors.
摘要:
There is provided a driving circuit which is simple and has a small occupied area. A shift register circuit of the present invention includes a plurality of register circuits. Each of the register circuits includes a clocked inverter circuit and an inverter circuit. Both are connected in series with each other so that an output signal of the clocked inverter circuit becomes an input signal of the inverter circuit. Further, the register circuit includes a signal line by which an output signal of the inverter circuit is transmitted. Since a number of elements are connected to the signal line and parasitic capacitance is large, it has a high load. The shift register circuit of the present invention uses the fact that since the parasitic capacitance of the signal line is large, it has a high load.
摘要:
A liquid crystal display device comprises a display panel including a pair of electrode substrates and a liquid crystal layer that is held between the electrode substrates and contains a liquid crystal material whose molecules are transferred in advance from a splay alignment to a bend alignment, and a display panel control circuit that controls transmittance of the display panel by a liquid crystal driving voltage. In particular, the display panel has a voltage-transmittance characteristic that a minimum value and maximum value of the transmittance are obtained in a state where the liquid crystal driving voltage exceeds a transfer threshold level at which an energy of the splay alignment is balanced with an energy of the bend alignment, and the display panel control circuit is configured to vary the liquid crystal driving voltage in a range corresponding to the minimum and maximum values of transmittance.
摘要:
To provide a liquid crystal panel employing a circuit layout that makes it possible to obtain a small size liquid crystal panel when the area a source driver occupies is large. A liquid crystal display device of the present invention comprises: a pixel portion including m×n pixels (m and n are both natural numbers and satisfy the relation m
摘要:
A D/A conversion circuit with a small area is provided. In the D/A conversion circuit, according to a digital signal transmitted from address lines of an address decoder, one of four gradation voltage lines is selected. A circuit including two N-channel TFTs is connected in series to a circuit including two P-channel TFT, and a circuit including the circuits connected in series to each other is connected in parallel to each of the gradation voltage lines. Further, an arrangement of the circuit including the two N-channel TFTs and the circuit including the two P-channel TFTs is reversed for every gradation voltage line. By this, the crossings of wiring lines in the D/A conversion circuit becomes small and the area can be made small.
摘要:
A device such as a liquid crystal display is provide, in which every pixel can sufficiently realize writing of a video signal into a storage capacitor. The liquid crystal display device of the present invention includes left and right gate drivers. The left gate driver is connected to supply selection signals to TFTs of pixels of a left half of a pixel portion. The right gate driver is connected to supply selection signals to TFTs of pixels of a right half of the pixel portion. In the liquid crystal display device of the present invention, timing when the left gate driver outputs a selection signal to a gate signal line connected to a pixel of a column is different from timing when the right gate driver outputs a selection signal to a gate signal line connected to a pixel of the same row as the pixel.
摘要:
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要:
This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要:
A shooting instruction device 1 selects one of preset shooting patterns 101 according to the type and scale of the disaster to cope with, then inputs shooting conditions 112 corresponding to the selected shooting pattern, and sends a shooting instruction 103. A video camera apparatus 2 loaded on a helicopter 3 makes a flight plan 106 based on the received shooting instruction 103, then shoots the position of a shooting target, then adds a still picture mark to a video signal 111, and sends it together with associated data 114. An information display device 4 extracts a still picture from a video signal 113 with the still picture mark, and displays the still picture together with the associated data 114.