公开(公告)号：US06312321B1

公开(公告)日：2001-11-06

申请号：US09494656

申请日：2000-01-31

申请人： Dai Fukushima ,  Hiroyuki Yano ,  Gaku Minamihaba

发明人： Dai Fukushima ,  Hiroyuki Yano ,  Gaku Minamihaba

IPC分类号： B24B100

CPC分类号： B24B37/11 ,  B24D3/346

摘要： The CMP apparatus including a polishing pad having functional groups charged at an opposite polarity to that of the abrasives in the slurry, on its surface is used, so as to eliminate unnecessary Cu film (Cu wiring) and TaN film (barrier metal film) present outside the damascene wiring, by polishing.

摘要翻译： 使用包括在其表面上具有与浆料中的研磨剂的极性相反的官能团的抛光垫的CMP装置，以消除存在的不必要的Cu膜（Cu布线）和TaN膜（阻挡金属膜） 外面的镶嵌线，抛光。

公开(公告)号：US20050118937A1

公开(公告)日：2005-06-02

申请号：US10962668

申请日：2004-10-13

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  B24B37/20 ,  B24B37/22 ,  B24B37/24 ,  H01L21/304 ,  B24B49/00

CPC分类号： B24B37/042

摘要： According to the present invention, there is provided a polishing apparatus comprising: a rotatable turntable; a polishing cloth attached on said turntable; a slurry supply pipe which supplies a slurry onto said polishing cloth; and a polishing member which presses an object to be polished against a surface of said polishing cloth, wherein said polishing cloth once stores the supplied slurry inside said polishing cloth, and discharges the slurry when pressed by said polishing member, thereby supplying the slurry to the surface of the object.

摘要翻译： 根据本发明，提供了一种抛光装置，包括：可旋转转盘; 附着在所述转盘上的抛光布; 浆料供给管，其将浆料供给到所述抛光布上; 以及抛光构件，其将抛光对象物压在所述抛光布的表面上，其中所述抛光布将所供应的浆料存储在所述抛光布内，并且在被所述抛光构件按压时排出浆料，从而将浆料供应到 物体的表面。

公开(公告)号：US20050118821A1

公开(公告)日：2005-06-02

申请号：US10932096

申请日：2004-09-02

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Susumu Yamamoto ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  B82Y10/00 ,  B82Y99/00 ,  C09G1/02 ,  C09G1/16 ,  C09K3/14 ,  C23F3/06 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/461 ,  H01L21/768

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C23F3/06 ,  H01L21/3212 ,  H01L21/7684

摘要： Disclosed is a CMP slurry comprising a Cu oxidizing agent, a complexing agent for forming a Cu organic complex, a surfactant, an inorganic particle, and a resin particle containing polystyrene, having on the surface thereof a functional group of the same kind of polarity as that of the inorganic particle and having an average particle diameter of less than 100 nm, the resin particle being incorporated at a concentration of less than 1% by weight.

摘要翻译： 公开了一种CMP浆料，其包含Cu氧化剂，用于形成Cu有机络合物的络合剂，表面活性剂，无机颗粒和含有聚苯乙烯的树脂颗粒，其表面上具有相同极性的官能团 无机粒子的平均粒径小于100nm的树脂粒子的浓度小于1重量％。

公开(公告)号：US06897143B2

公开(公告)日：2005-05-24

申请号：US10600568

申请日：2003-06-23

申请人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

摘要翻译： 形成盖膜的方法包括以R 1的选择性（=盖膜的去除速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及进行抛光操作的第二抛光步骤 R 2的选择性（=盖膜的去除率/绝缘膜的去除率）。 通过使用条件为R 1> R 2的浆料进行每次研磨操作。 通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。 因此，可以提供具有优异RC特性的半导体器件。

公开(公告)号：US06858936B2

公开(公告)日：2005-02-22

申请号：US10609649

申请日：2003-07-01

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

摘要翻译： 一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。

公开(公告)号：US20070293049A1

公开(公告)日：2007-12-20

申请号：US11812185

申请日：2007-06-15

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Hiroyuki Yano

IPC分类号： H01L21/461 ,  H01L21/302 ,  C03C15/00

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A slurry for CMP of Cu film is provided, which includes water, peroxosulfuric acid or a salt thereof, basic amino acid, a complexing agent which forms a water-insoluble metal complex, a surfactant, and colloidal silica having a primary diameter ranging from 5 to 50 nm. The basic amino acid is included at a content of 0.05 to 0.5 wt %.

摘要翻译： 提供了一种用于CMP膜的浆料，其包括水，过氧硫酸或其盐，碱性氨基酸，形成水不溶性金属络合物的络合剂，表面活性剂和主要直径为5 至50nm。 碱性氨基酸的含量为0.05〜0.5重量％。

公开(公告)号：US20070293047A1

公开(公告)日：2007-12-20

申请号：US11802532

申请日：2007-05-23

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/04 ,  B24B57/02 ,  H01L21/02074 ,  H01L21/31053

摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.

摘要翻译： 抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体 的相对于抛光垫的表面的倾斜方向。

公开(公告)号：US07144804B2

公开(公告)日：2006-12-05

申请号：US11022644

申请日：2004-12-28

申请人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： H01L21/4763

CPC分类号： H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

摘要翻译： 一种半导体器件，包括半导体衬底，层间绝缘膜，该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜，以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。

公开(公告)号：US06984582B2

公开(公告)日：2006-01-10

申请号：US10730902

申请日：2003-12-10

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Yoshikuni Tateyama

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Yoshikuni Tateyama

IPC分类号： H01L21/44

CPC分类号： H01L21/02074 ,  H01L21/3212 ,  H01L21/7684

摘要： A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.

摘要翻译： 抛光方法包括：将抛光液供给待研磨的膜的上部，进行第一次抛光，在第一次抛光之后，将膜设置在具有预定图案的槽以便填充的层上， 在向其中提供蒸馏水和清洁液之一的同时，对薄膜进行抛光以进行清洁抛光，并且在清洁抛光之后，通过提供抛光液来研磨残留在凹槽外侧的膜的剩余部分，以进行第二次抛光。

公开(公告)号：US20090124172A1

公开(公告)日：2009-05-14

申请号：US12295673

申请日：2007-03-27

申请人： Kazuhito Uchikura ,  Hirotaka Shida ,  Yuuichi Hashiguchi ,  Gaku Minamihara ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Kazuhito Uchikura ,  Hirotaka Shida ,  Yuuichi Hashiguchi ,  Gaku Minamihara ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： B24B1/00 ,  C09K13/00 ,  B24B7/20 ,  B65D85/00 ,  B65D85/84

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, (C) an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid, (D) an oxidizing agent, and (E) a nonionic surfactant having a triple bond, the mass ratio (WB/WC) of the amount (WB) of the component (B) to the amount (WC) of the component (C) being 0.01 or more and less than 2, and the component (E) being shown by the following general formula (1), wherein m and n individually represent integers equal to or larger than one, provided that m+n≦50 is satisfied.

摘要翻译： 化学机械研磨用水系分散体包含（A）磨粒，（B）至少一种喹啉羧酸和吡啶羧酸，（C）除喹啉羧酸以外的有机酸和吡啶羧酸，（D）氧化剂，（E ）具有三键的非离子表面活性剂，组分（B）的量（WB）与组分（C）的量（WC）的质量比（WB / WC）为0.01以上且小于2， 并且组分（E）由以下通式（1）表示，其中m和n分别表示等于或大于1的整数，条件是满足m + n <= 50。