Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head
    31.
    发明授权
    Dielectric film structure, piezoelectric actuator using dielectric element film structure and ink jet head 有权
    电介质膜结构,使用电介质膜结构的压电致动器和喷墨头

    公开(公告)号:US07938515B2

    公开(公告)日:2011-05-10

    申请号:US12389710

    申请日:2009-02-20

    IPC分类号: B41J2/045

    摘要: The present invention provides a dielectric film structure having a substrate and a dielectric film provided on the substrate and in which the dielectric film has (001) face orientation with respect to the substrate, and in which a value u in the following equation (1) regarding the dielectric film is a real number greater than 2: u=(Cc/Ca)×(Wa/Wc)  (1) where, Cc is a count number of a peak of a (001′) face of the dielectric film in an Out-of-plane X ray diffraction measurement (here, 1′ is a natural number selected so that Cc becomes maximum); Ca is a count number of a peak of a (h′00) face of the dielectric film in an In-plane X ray diffraction measurement (here, h′ is a natural number selected so that Cc becomes maximum); Wc is a half-value width of a peak of the (001′) face of the dielectric film in an Out-of-plane rocking curve X ray diffraction measurement; and Wa is a half-value width of a peak of the (h′00) face of the dielectric film in an In-plane rocking curve X ray diffraction measurement.

    摘要翻译: 本发明提供了一种电介质膜结构,其具有设置在基板上的基板和电介质膜,并且其中电介质膜相对于基板具有(001)面取向,并且其中以下等式(1)中的值u, 关于电介质膜是大于2的实数:u =(Cc / Ca)×(Wa / Wc)(1)其中,Cc是介电膜的(001')面的峰的计数 平面外X射线衍射测量(这里,1'是选择为Cc变为最大的自然数); Ca是In平面X射线衍射测定中的电介质膜的(h'00)面的峰值的计数数(这里,h'是选择为Cc变为最大的自然数); Wc是外平面摇摆曲线X射线衍射测定中的电介质膜的(001')面的峰值的半值宽度; Wa是In平面摇摆曲线X射线衍射测定中的电介质膜的(h'00)面的峰值的半值宽度。

    Liquid crystal display
    34.
    发明授权
    Liquid crystal display 失效
    液晶显示器

    公开(公告)号:US07667955B2

    公开(公告)日:2010-02-23

    申请号:US11366219

    申请日:2006-03-02

    申请人: Kenichi Takeda

    发明人: Kenichi Takeda

    IPC分类号: G06F1/16

    CPC分类号: G06F1/1601

    摘要: In a liquid crystal display, an enclosure is formed by detachably fitting a synthetic resin-made front enclosure including a liquid crystal panel with a synthetic resin-made rear enclosure, and the enclosure is fitted upright to a stand by drilling a substantially U-shaped stand hole in the middle of a bottom plate of the rear enclosure. Further, the stand is attached to the exterior casing of the liquid crystal panel by screws, the stand in the stand hole is removably formed on the outside of the rear enclosure through the cutout portion by forming the cutout portion reaching the stand hole from the edge of the bottom plate at the bottom plate of the rear enclosure 1B, and a sealing plate for sealing the cutout portion integrally protrudes from the central portion of the edge of the bottom plate of the front enclosure.

    摘要翻译: 在液晶显示器中,通过将合成树脂制的前壳体与合成树脂制成的后壳体可拆卸地装配在一起而形成外壳,该外壳通过钻出基本上U形 后部外壳底板中间的支架孔。 此外,通过螺钉将支架安装在液晶面板的外壳上,通过形成从边缘到达支座的切口部分,可拆卸地在支座的外侧通过切口部分形成立柱上的支架 并且用于密封切口部的密封板与前壳体的底板的边缘的中心部分一体地突出。

    LIQUID CRYSTAL DISPLAY DEVICE
    38.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE 失效
    液晶显示装置

    公开(公告)号:US20070273627A1

    公开(公告)日:2007-11-29

    申请号:US11751210

    申请日:2007-05-21

    申请人: Kenichi Takeda

    发明人: Kenichi Takeda

    IPC分类号: G09G3/36

    摘要: A liquid crystal display device includes a liquid crystal module, a disk drive and a wiring board. The liquid crystal module has protrusions formed on a back plate of the liquid crystal module. The disk drive has attachment components aligned with the protrusions and fixed to the protrusions. The wiring board is disposed between the liquid crystal module and the disk drive. The wiring board has holes into which the protrusions are inserted.

    摘要翻译: 液晶显示装置包括液晶模块,磁盘驱动器和布线板。 液晶模块具有形成在液晶模块的背板上的突起。 磁盘驱动器具有与突起对准的固定部件并且固定到突出部。 布线板设置在液晶模块和磁盘驱动器之间。 布线板具有插入突起的孔。

    Ordering support system, ordering support apparatus, device monitoring apparatus, ordering support method, device monitoring method, and computer-readable medium
    39.
    发明申请
    Ordering support system, ordering support apparatus, device monitoring apparatus, ordering support method, device monitoring method, and computer-readable medium 审中-公开
    订购支持系统,订购支持设备,设备监控设备,订购支持方式,设备监控方式和计算机可读介质

    公开(公告)号:US20070255628A1

    公开(公告)日:2007-11-01

    申请号:US11785544

    申请日:2007-04-18

    IPC分类号: G06Q30/00

    CPC分类号: G06Q30/06 G06Q30/0601

    摘要: An ordering support system is disclosed. The ordering support system includes a device monitoring apparatus that retrieves a device information item about a device connected to a network and a status information item about a consumable of the device, determines whether the consumable is depleted based on the status information item, and sends, if the consumable is determined to be depleted, the device information item and the status information item to an ordering support apparatus. The ordering support system further includes the ordering support apparatus that receives the device information item and the status information item from the device monitoring apparatus, creates an electronic mail message including a URL indicating a Web page for ordering the consumable determined to be depleted, and sends the electronic mail message to a pre-registered mail address associated with the device.

    摘要翻译: 公开了订购支持系统。 订购支持系统包括检索关于与网络连接的设备的设备信息项和关于设备的消耗品的状态信息项的设备监控设备,基于状态信息项确定消耗品是否耗尽, 如果消耗品被确定为耗尽,则将设备信息项和状态信息项提供给订购支持设备。 订购支持系统还包括从设备监控设备接收设备信息项和状态信息项的订购支持设备,创建一个电子邮件消息,该电子邮件消息包括指示用于排序被确定要耗尽的耗材的网页的URL,并发送 电子邮件消息发送到与设备相关联的预先登记的邮件地址。

    Semiconductor device and manufacturing method thereof
    40.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US07247890B2

    公开(公告)日:2007-07-24

    申请号:US10931119

    申请日:2004-09-01

    IPC分类号: H01L31/0328 H01L29/80

    摘要: Disclosed is herein a semiconductor device having a DRAM with less scattering of threshold voltage of MISFET in a memory cell and having good charge retainability of a capacitor, and a manufacturing method of the semiconductor device. An anti-oxidation film is formed to the side wall of a gate electrode before light oxidation thereby suppressing the oxidation of the side wall for the gate electrode and decreasing scattering of the thickness of the film formed to the sidewall in an asymmetric diffusion region structure in which the impurity concentration of an n-type semiconductor region and a p-type semiconductor region on the side of the data line is made relatively higher than the impurity concentration in the n-type semiconductor region and p-type semiconductor region on the side of the capacitor, respectively.

    摘要翻译: 这里公开了具有在存储单元中具有MISFET阈值电压的较小散射并具有良好的电容保持性的DRAM的半导体器件,以及半导体器件的制造方法。 在光氧化之前,在栅电极的侧壁上形成抗氧化膜,从而抑制栅电极的侧壁的氧化,并且在不对称扩散区域结构中减少形成在侧壁上的膜的厚度的散射 使数据线一侧的n型半导体区域和p型半导体区域的杂质浓度比n型半导体区域和p型半导体区域的杂质浓度相对高于 电容器。