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86 条记录 (耗时 0.026 秒)

    Bidirectional switch
    31.
    发明授权
    Bidirectional switch 有权
    双向开关

    公开(公告)号：US08344463B2

    公开(公告)日：2013-01-01

    申请号：US12681567

    申请日：2009-07-10

    申请人： Manabu Yanagihara ,  Kazushi Nakazawa ,  Tatsuo Morita ,  Yasuhiro Uemoto

    发明人： Manabu Yanagihara ,  Kazushi Nakazawa ,  Tatsuo Morita ,  Yasuhiro Uemoto

    IPC分类号： H01L27/88

    CPC分类号： H01L27/088 ,  H01L23/481 ,  H01L23/4824 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/7786 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A bidirectional switch includes a plurality of unit cells 11 including a first ohmic electrode 15, a first gate electrode 17, a second gate electrode 18, and a second ohmic electrode 16. The first gate electrodes 15 are electrically connected via a first interconnection 31 to a first gate electrode pad 43. The second gate electrodes 18 are electrically connected via a second interconnection 32 to a second gate electrode pad 44. A unit cell 11 including a first gate electrode 17 having the shortest interconnect distance from the first gate electrode pad 43 includes a second gate electrode 18 having the shortest interconnect distance from the second gate electrode pad 44.

    摘要翻译： 双向开关包括多个单元电池11，其包括第一欧姆电极15，第一栅极电极17，第二栅极电极18和第二欧姆电极16.第一栅电极15经由第一互连线31电连接到 第一栅极电极焊盘43.第二栅电极18经由第二互连32电连接到第二栅极电极焊盘44.单元电池11包括与第一栅电极焊盘43的布线距离最短的第一栅电极17 包括与第二栅电极焊盘44的互连距离最短的第二栅电极18。

    Cooling system and electronic equipment including cooling system
    32.
    发明授权
    Cooling system and electronic equipment including cooling system 失效
    冷却系统和电子设备包括冷却系统

    公开(公告)号：US08240166B2

    公开(公告)日：2012-08-14

    申请号：US12430153

    申请日：2009-04-27

    申请人： Noriyo Nishijima ,  Shigeo Ohashi ,  Nariaki Shigyo ,  Tatsuo Morita

    发明人： Noriyo Nishijima ,  Shigeo Ohashi ,  Nariaki Shigyo ,  Tatsuo Morita

    IPC分类号： F25D23/12

    CPC分类号： G03B21/16

    摘要： An electronic equipment includes a cooling system using boiling and condensation of a refrigerant, especially stabilizes the cooling performance, and reduces the influence which vibration accompanying phase change of boiling and condensation gives to the electronic equipment. Electronic equipment includes a cooling system including a cooling part which cools heat generating from a heat generator such as a heat generating component by using boiling of a refrigerant and is thermally connected to the heat generator such as the heat generating element, a heat radiation part which radiates heat absorbed by the refrigerant in the cooling part by condensation, a refrigerant drive part for delivering the condensed refrigerant to the cooling part again, and piping which fluidly connects them, and the electronic equipment includes preliminary heating means for heating the refrigerant, which flows to the cooling part from the refrigerant drive part, between the refrigerant drive part and the cooling part.

    摘要翻译： 电子设备包括使用制冷剂的沸腾和冷凝的冷却系统，特别是稳定冷却性能，并且减少伴随着冷凝相变的振动对电子设备的影响。 电子设备包括冷却系统，其包括冷却部件，该冷却部件通过使用沸腾的制冷剂来冷却来自诸如发热部件的发热部件的发热的热量，并且与发热元件等发热体热连接;热辐射部件 通过冷凝来散发由冷却部中的制冷剂吸收的热量，再次将冷凝后的制冷剂输送到冷却部的制冷剂驱动部以及流体连接它们的管路，电子设备包括用于加热流过的制冷剂的预热装置 从制冷剂驱动部分到制冷剂驱动部分和冷却部分之间的冷却部分。

    Power conversion circuit
    33.
    发明授权
    Power conversion circuit 有权
    电源转换电路

    公开(公告)号：US08159848B2

    公开(公告)日：2012-04-17

    申请号：US12598387

    申请日：2008-12-11

    申请人： Atsushi Morimoto ,  Matsuo Shiraishi ,  Kouichi Ishikawa ,  Tatsuo Morita ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

    发明人： Atsushi Morimoto ,  Matsuo Shiraishi ,  Kouichi Ishikawa ,  Tatsuo Morita ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

    IPC分类号： H02M7/217

    CPC分类号： H02M3/1582 ,  H02M7/219

    摘要： A power conversion circuit includes a bidirectional switch 2. The bidirectional switch 2 has a first gate terminal G1, a second gate terminal G2, a first ohmic terminal S1 and a second ohmic terminal S2. The bidirectional switch 2 has four operation states. In the first state, the bidirectional switch 2 operates as a diode having a cathode as the first ohmic terminal S1 and an anode as the second ohmic terminal S2. In a second state, the bidirectional switch 2 operates as a diode having an anode as the first ohmic terminal S1 and a cathode as the second ohmic terminal S2. In a third state, the bidirectional switch 2 is bidirectionally conductive with via a diode between the first and second ohmic terminals S1 and S2. In a fourth state, the bidirectional switch 2 cuts off a bidirectional current between the first and second ohmic terminals.

    摘要翻译： 功率转换电路包括双向开关2.双向开关2具有第一栅极端子G1，第二栅极端子G2，第一欧姆端子S1和第二欧姆端子S2。 双向开关2具有四个操作状态。 在第一状态下，双向开关2作为具有阴极的第二欧姆端子S1和阳极作为第二欧姆端子S2的二极管工作。 在第二状态下，双向开关2作为具有阳极的第二欧姆端子S1和阴极作为第二欧姆端子S2的二极管工作。 在第三状态下，双向开关2通过第一和第二欧姆端子S1和S2之间的二极管双向导通。 在第四状态下，双向开关2切断第一和第二欧姆端子之间的双向电流。

    Nitride semiconductor device and method for fabricating the same
    34.
    发明授权
    Nitride semiconductor device and method for fabricating the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US08013320B2

    公开(公告)日：2011-09-06

    申请号：US11712482

    申请日：2007-03-01

    申请人： Hisayoshi Matsuo ,  Tatsuo Morita ,  Tetsuzo Ueda ,  Daisuke Ueda

    发明人： Hisayoshi Matsuo ,  Tatsuo Morita ,  Tetsuzo Ueda ,  Daisuke Ueda

    IPC分类号： H01L31/00

    CPC分类号： H01L29/045 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/12

    摘要： A nitride semiconductor device includes a semiconductor stacked structure which is formed of a nitride semiconductor having a first principal surface and a second principal surface opposed to the first principal surface and which includes an active layer. The first principal surface of the semiconductor stacked structure is formed with a plurality of indentations whose plane orientations are the {0001} plane, and the plane orientation of the second principal surface is the {1-101} plane. The active layer is formed along the {1-101} plane.

    摘要翻译： 氮化物半导体器件包括半导体层叠结构，其由具有第一主表面和与第一主表面相对并包括有源层的第二主表面的氮化物半导体形成。 半导体堆叠结构的第一主表面形成有多个平面取向为{0001}面并且第二主面的平面取向为{1-101}面的凹陷。 有源层沿{1-101}面形成。

    Field effect transistor
    36.
    发明申请
    Field effect transistor 有权
    场效应晶体管

    公开(公告)号：US20100283060A1

    公开(公告)日：2010-11-11

    申请号：US12805135

    申请日：2010-07-14

    申请人： Tatsuo Morita ,  Tetsuzo Ueda

    发明人： Tatsuo Morita ,  Tetsuzo Ueda

    IPC分类号： H01L29/80 ,  H01L29/205

    CPC分类号： H01L21/28581 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/7786

    摘要： A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance.

    摘要翻译： 栅电极的材料是具有比常规使用的Pd等功函数高的导电氧化物，从而在不降低异质结的片载体浓度的情况下实现常关晶体管。 因此，可以在减小特定导通电阻的增加的同时实现常关断操作。

    Nitride semiconductor based bipolar transistor and the method of manufacture thereof
    37.
    发明申请
    Nitride semiconductor based bipolar transistor and the method of manufacture thereof 有权
    氮化物半导体双极晶体管及其制造方法

    公开(公告)号：US20080121938A1

    公开(公告)日：2008-05-29

    申请号：US11812591

    申请日：2007-06-20

    申请人： Tatsuo Morita ,  Tetsuzo Ueda

    发明人： Tatsuo Morita ,  Tetsuzo Ueda

    IPC分类号： H01L29/739 ,  H01L21/34

    CPC分类号： H01L29/2003 ,  H01L29/201 ,  H01L29/66318 ,  H01L29/7371

    摘要： In a nitride semiconductor based bipolar transistor, a contact layer formed so as to contact an emitter layer is composed of n-type InAlGaN quaternary mixed crystals, the emitter layer and the contact layer are selectively removed so that the barrier height with the emitter formed thereon is small, and the ohmic electrode contact resistance can be lowered on the InAlGaN quaternary mixed crystals, for example, so that a WSi emitter electrode becomes an eave. A base electrode is formed by a self-aligned process using the emitter electrode as a mask. By such a configuration, the distance between the emitter and the edge of the base electrode is sufficiently shortened, and the base resistance can be lowered. As a result, a bipolar transistor having favorable high-frequency characteristics can be realized.

    摘要翻译： 在基于氮化物半导体的双极型晶体管中，形成为与发射极层接触的接触层由n型InAlGaN四元混晶构成，选择性地去除发射极层和接触层，使得其上形成有发射极的势垒高度 例如，在InAlGaN四元混晶中的欧姆电极接触电阻可以降低，使得WSi发射极成为檐。 通过使用发射电极作为掩模的自对准工艺形成基极。 通过这样的结构，能够充分地缩短发射极与基极的边缘之间的距离，能够降低基极电阻。 结果，可以实现具有良好的高频特性的双极晶体管。

    Projector having an image display element
    38.
    发明授权
    Projector having an image display element 有权
    具有图像显示元件的投影仪

    公开(公告)号：US07293878B2

    公开(公告)日：2007-11-13

    申请号：US10964631

    申请日：2004-10-15

    申请人： Tatsuo Morita ,  Mikio Shiraishi ,  Tetsuki Nishimura ,  Hideki Okuyama

    发明人： Tatsuo Morita ,  Mikio Shiraishi ,  Tetsuki Nishimura ,  Hideki Okuyama

    IPC分类号： G03B21/26 ,  G03B21/18

    CPC分类号： H04N9/3141 ,  G03B21/16 ,  H04N5/7441

    摘要： A projector having an image display element for modulating light on the basis of an image signal and a projection lens for projecting light emitted from the image display element on a screen, includes: a lamp which has a light emitting source for emitting light; a reflector which reflects light emitted from the light emitting source; a cover glass which covers an emission surface of light from the reflector; a cooling fan disposed outside the reflector; and an air direction changing unit which changes a direction of cooling air caused by the cooling fan. The air direction changing unit is disposed within a space surrounded by the reflector and the cover glass, and outside an emitted light path of light reflected by the reflector. Cooling air within the space is exhausted outside the projector through the cooling fan.

    摘要翻译： 一种具有用于根据图像信号调制光的图像显示元件的投影仪和用于将从图像显示元件发射的光投射到屏幕上的投影透镜，包括：具有用于发光的发光源的灯; 反射从所述发光源发射的光的反射器; 盖玻璃，其覆盖来自反射器的光的发射表面; 设置在反射器外部的冷却风扇; 以及空气方向改变单元，其改变由所述冷却风扇引起的冷却空气的方向。 空气方向改变单元设置在由反射器和盖玻璃包围的空间内以及由反射器反射的光的发射光路的外部。 空间内的冷却空气通过冷却风扇在投影机外部耗尽。