公开(公告)号：US08440524B2

公开(公告)日：2013-05-14

申请号：US13030790

申请日：2011-02-18

申请人： Hirokazu Fujiwara ,  Masaki Konishi ,  Jun Kawai ,  Takeo Yamamoto ,  Takeshi Endo ,  Takashi Katsuno ,  Yukihiko Watanabe ,  Narumasa Soejima

发明人： Hirokazu Fujiwara ,  Masaki Konishi ,  Jun Kawai ,  Takeo Yamamoto ,  Takeshi Endo ,  Takashi Katsuno ,  Yukihiko Watanabe ,  Narumasa Soejima

IPC分类号： H01L21/00

CPC分类号： H01L29/7811 ,  C21D1/09 ,  C22F1/10 ,  H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/872

摘要： A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate.

摘要翻译： 一种半导体器件的制造方法，该半导体器件包括由碳化硅构成的半导体衬底，与衬底的上表面接触的上表面电极和与衬底的下表面接触的下表面电极，该方法包括以下步骤：（ a）在基板的上表面侧上形成上表面结构，（b）在基板的下表面侧形成下表面结构。 步骤（a）包括以下步骤：（a1）在基板的上表面上沉积上表面电极材料层，上表面电极材料层是上表面电极的原料层，（a2）使 上表面电极材料层。 步骤（b）包括以下步骤：（b1）在基板的下表面上沉积下表面电极材料层，下表面电极材料层是下表面电极的原料层，（b2）使 下表面电极材料层用激光器在下表面电极和衬底之间形成欧姆接触。

公开(公告)号：US20120238653A1

公开(公告)日：2012-09-20

申请号：US13442327

申请日：2012-04-09

申请人： Masashi Horikiri ,  Atsushi Sudo ,  Takeshi Endo

发明人： Masashi Horikiri ,  Atsushi Sudo ,  Takeshi Endo

IPC分类号： C07C237/20 ,  C07C231/02 ,  C08L63/02

CPC分类号： C09J11/06 ,  C08G59/44 ,  C08G59/50 ,  C08K5/05 ,  C08K5/07 ,  C08K5/13 ,  C08K5/20 ,  C09J163/00

摘要： A latent curing agent obtained by the reaction of a coumarin compound with an amine.

摘要翻译： 通过香豆素化合物与胺的反应获得的潜在性固化剂。

公开(公告)号：US20110262185A1

公开(公告)日：2011-10-27

申请号：US13090977

申请日：2011-04-20

申请人： Takeshi Endo

发明人： Takeshi Endo

IPC分类号： G03G15/04

CPC分类号： G03G15/04072 ,  G03G15/0435 ,  G03G21/1666 ,  G03G2215/0404 ,  G03G2221/1636

摘要： An exposure device includes a mirror to reflect light used for exposure of an object, a holder to hold the mirror, an adhesive that bonds the mirror to the holder and elastically deforms, and an adjusting tool that pushes the mirror to change a direction of the mirror.

摘要翻译： 曝光装置包括用于反射用于物体曝光的光的反射镜，用于保持反射镜的保持器，将反射镜粘合到保持器并弹性变形的粘合剂，以及调节工具，其推动反射镜以改变方向 镜子。

公开(公告)号：US07825017B2

公开(公告)日：2010-11-02

申请号：US12406578

申请日：2009-03-18

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/44 ,  H01L21/441 ,  H01L31/0312 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0611 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/8083 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

摘要翻译： 设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极 并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。 钝化膜具有开口，表面电极通过该开口暴露在外部。 钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

公开(公告)号：US07824995B2

公开(公告)日：2010-11-02

申请号：US12071717

申请日：2008-02-26

申请人： Takeshi Endo ,  Tsuyoshi Yamamoto ,  Eiichi Okuno

发明人： Takeshi Endo ,  Tsuyoshi Yamamoto ,  Eiichi Okuno

IPC分类号： H01L29/72

CPC分类号： H01L29/7828 ,  H01L21/049 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/51 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The channel region for flowing current between the first and second impurity regions is controlled by a voltage applied to the gate. An interface between the channel region and the gate insulating film has a hydrogen concentration equal to or greater than 2.6×1020 cm−3. The interface provides a channel surface perpendicular to a (0001)-orientation plane.

摘要翻译： SiC半导体器件包括：具有主表面的SiC衬底; 衬底上的沟道区; 分别在通道区域的上游侧和下游侧的第一和第二杂质区域; 通过栅极绝缘膜在沟道区上形成栅极。 用于在第一和第二杂质区域之间流动电流的沟道区域由施加到栅极的电压来控制。 沟道区域和栅极绝缘膜之间的界面的氢浓度等于或大于2.6×1020cm-3。 界面提供垂直于（0001）取向平面的通道表面。

公开(公告)号：US20100144964A1

公开(公告)日：2010-06-10

申请号：US12442298

申请日：2007-09-18

申请人： Atsushi Sudo ,  Takeshi Endo ,  Andreas Taden ,  Rainer Schoenfeld ,  Thomas Huver

发明人： Atsushi Sudo ,  Takeshi Endo ,  Andreas Taden ,  Rainer Schoenfeld ,  Thomas Huver

IPC分类号： C08L79/00 ,  B01J31/12 ,  C08G73/22 ,  B05D3/02

CPC分类号： H01L23/293 ,  C08F10/00 ,  C08G61/122 ,  C08G73/02 ,  H01L2924/0002 ,  H01L2924/12044 ,  C08F4/74 ,  C08F4/80 ,  H01L2924/00

摘要： The present invention relates to a catalyst, which is an organic component with electron withdrawing substituents and to compositions with such catalyst and at least one benzoxazine component, and the use of such compositions in adhesives, sealants and coatings.

摘要翻译： 本发明涉及一种催化剂，其是具有吸电子取代基的有机组分和具有这种催化剂和至少一种苯并恶嗪组分的组合物，以及这些组合物在粘合剂，密封剂和涂料中的用途。

公开(公告)号：US20100103490A1

公开(公告)日：2010-04-29

申请号：US12579571

申请日：2009-10-15

申请人： Kazutaka Noguchi ,  Takeshi Endo ,  Hiroshi Hatano ,  Tetsuya Noda ,  Hiroyuki Matsuda ,  Shigeru Yamasaki

发明人： Kazutaka Noguchi ,  Takeshi Endo ,  Hiroshi Hatano ,  Tetsuya Noda ,  Hiroyuki Matsuda ,  Shigeru Yamasaki

IPC分类号： G03H1/04 ,  G03H1/22

CPC分类号： G03H1/0486 ,  G03H1/2286 ,  G03H2001/0491 ,  G03H2222/36 ,  G11B7/0065 ,  G11B7/08564 ,  G11B7/131

摘要： In the optical information recording reproducing apparatus that makes a reference light beam to interfere with an information light beam so as to record the information of the information light beam in a recording medium based on a two light beam interference method, or irradiates the reference light beam to a recording medium so as to emit a light beam and reproduces information stored in the recording medium by leading the light beam emitted from the recording medium an the image light receiving element, the optical information recording reproducing apparatus comprises a detector to detect positional deviation of at least one of the reference light beam and the information light beam from a predetermined optical path; and a correcting mechanism to correct the positional deviation based on an output from the detector.

摘要翻译： 在使基准光束干涉信息光束以便根据两种光束干涉法将信息光束的信息记录在记录介质中的光信息记录重放装置中，或照射参考光束 通过将从记录介质发射的光束引导到图像光接收元件而发射光束并再现存储在记录介质中的信息，光信息记录再现装置包括检测器，以检测位置偏差 来自预定光路的参考光束和信息光中的至少一个; 以及基于来自检测器的输出来校正位置偏差的校正机构。

公开(公告)号：US20100099818A1

公开(公告)日：2010-04-22

申请号：US12621850

申请日：2009-11-19

申请人： Atsushi Sudo ,  Ryoichi Kudoh ,  Kazuya Uenishi ,  Takeshi Endo ,  Andreas Taden ,  Rainer Schoenfeld ,  Thomas Huver

发明人： Atsushi Sudo ,  Ryoichi Kudoh ,  Kazuya Uenishi ,  Takeshi Endo ,  Andreas Taden ,  Rainer Schoenfeld ,  Thomas Huver

IPC分类号： C08G63/08 ,  C08G63/00 ,  C08G63/06

CPC分类号： C08G73/02 ,  C07D265/16 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Polymerizable combinations, comprising at least one first component selected from the group of benzoxazine monomers and at least one second component selected from the group of aromatic esters are described. Furtheron the use of aromatic esters as additives to benzoxazine monomers as well as methods of coating a device by heating the above mentioned combination, and a device, coated by that way is explained.

摘要翻译： 描述了包含至少一种选自苯并恶嗪单体和至少一种选自芳族酯的第二组分的第一组分的可聚合组合。 还有，使用芳族酯作为苯并恶嗪单体的添加剂以及通过加热上述组合来涂覆器件的方法以及通过这种方式涂覆的器件。

公开(公告)号：US20090238605A1

公开(公告)日：2009-09-24

申请号：US12477961

申请日：2009-06-04

申请人： Takeshi Endo ,  Takahiro Kojima ,  Kazutoshi Takahashi

发明人： Takeshi Endo ,  Takahiro Kojima ,  Kazutoshi Takahashi

IPC分类号： G03G15/00

CPC分类号： G03G15/04072 ,  G03G15/0435

摘要： In a laser exposure device according to the present invention, a positioning pin, which is formed in a lens holder supporting a lens system, is inserted through an elongated hole for restriction of a board holder supporting a laser diode. An eccentric cam is inserted into an elongated hole for rotation movement formed in a board holder and a circular hole for rotation movement which is formed in the lens holder and which faces the elongated hole for rotation movement. An eccentric cam is inserted into an elongated hole for slide movement formed in the board holder and a circular hole for slide movement which is formed in the lens holder and which faces the elongated hole for slide movement. The eccentric cams are rotated to relatively move the board holder and lens holder with respect to each other to thereby establish alignment between the optical axes of the laser diode and lens system. In a state where the eccentric cams are fitted into the elongated holes, the board holder and lens holder are fixed to each other by screws.

摘要翻译： 在根据本发明的激光曝光装置中，形成在支撑透镜系统的透镜支架中的定位销被插入通过长孔，用于限制支撑激光二极管的板支架。 偏心凸轮被插入到用于旋转运动的长孔中，形成在板保持器中的旋转运动和用于旋转运动的圆形孔，其形成在透镜保持器中并面向用于旋转运动的细长孔。 偏心凸轮被插入到用于滑动运动的细长孔中，形成在板保持器中，并且用于滑动运动的圆形孔形成在透镜保持器中并面对用于滑动运动的长孔。 偏心凸轮旋转以相对于彼此相对地移动板保持器和透镜保持器，从而在激光二极管和透镜系统的光轴之间建立对准。 在将偏心凸轮装配到细长孔中的状态下，通过螺钉将板保持器和透镜保持器彼此固定。

公开(公告)号：US20090224353A1

公开(公告)日：2009-09-10

申请号：US12382012

申请日：2009-03-05

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Masayasu Ishiko ,  Hirokazu Fujiwara ,  Masaki Konishi

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Masayasu Ishiko ,  Hirokazu Fujiwara ,  Masaki Konishi

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/417 ,  H01L29/861

摘要： A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.

摘要翻译： 二极管包括：n型半导体区域; 设置在n型半导体区域的正面的一部分中的p型半导体区域; 邻接n型半导体区域的前表面和p型半导体区域的正面的阳极电极（正面电极），同时至少在n型半导体区域的正面上形成肖特基结; 以及具有与n型半导体区域相邻的右侧（第一侧）和左侧（第二侧）的绝缘区域，所述右侧面向位于所述n型半导体区域下方的第二n型半导体区域 肖特基结，左手侧面对位于n型半导体区域和p型半导体区域之间的pn结的下方的第一n型半导体区域。