公开(公告)号：US20120267048A1

公开(公告)日：2012-10-25

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： B05C5/00

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US20120160809A1

公开(公告)日：2012-06-28

申请号：US13391310

申请日：2010-08-16

申请人： Kiyotaka Ishibashi ,  Osamu Morita

发明人： Kiyotaka Ishibashi ,  Osamu Morita

IPC分类号： B44C1/22 ,  H01L21/3065 ,  H05H1/46 ,  C23C16/511

CPC分类号： H01J37/32192 ,  C23C16/455 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

摘要翻译： 等离子体处理装置11的微波供给单元20包括构造成可从外导体33向内导体32延伸的短截线构件51.短截线构件51用作变距装置，用于改变径向方向上的距离 内导体32的外表面36的一部分和面向内径部分的内导体32的外表面的一部分的面对构件即冷却板突起47.短针构件51包括杆状 构件52支撑在外导体33处并且构造成沿径向方向延伸; 以及作为用于调节棒状构件52在径向上的移动距离的移动距离调节构件的螺钉53。

公开(公告)号：US20090255324A1

公开(公告)日：2009-10-15

申请号：US12419574

申请日：2009-04-07

申请人： Kiyotaka Ishibashi ,  Yoshiharu Kishida

发明人： Kiyotaka Ishibashi ,  Yoshiharu Kishida

IPC分类号： G01N7/00 ,  H01L21/3065 ,  C23C16/54

CPC分类号： H01L21/67069 ,  C23C16/54

摘要： A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.

摘要翻译： 对应于密封结构的闸阀密封等离子体产生室的开口，并且包括阀体，阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。 第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。 第一和第二环形密封构件彼此不接触，即在它们之间形成间隙。 在第一环形密封构件的长度方向上布置有多个气体槽。 通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽，该间隙经由气体槽与等离子体生成室连通。 在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。 在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部，该凹部与气体喷出通路的气体出口连接。

公开(公告)号：US20140102367A1

公开(公告)日：2014-04-17

申请号：US14118993

申请日：2012-05-21

申请人： Kiyotaka Ishibashi

发明人： Kiyotaka Ishibashi

IPC分类号： C23C16/511

CPC分类号： C23C16/511 ,  C23C16/45536 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32357 ,  H01J37/3244

摘要： A plasma processing device including a stage for holding a substrate, a processing vessel, a first supply unit, a masking portion, a dielectric member, a microwave introduction unit, and a second supply unit. The first supply unit supplies a first process gas for layer deposition to the processing space. The masking portion is electrically conductive and has a first surface facing the processing space, a second surface at an opposite side, and one or more through holes extending from the first surface to the second surface. The dielectric member is in contact with the second surface of the masking portion, and is formed with one or more cavities connected to the one or more through holes. The microwave introduction unit introduces microwaves to the dielectric member. The second supply unit supplies a second process gas for plasma processing into the cavities of the dielectric member.

摘要翻译： 一种等离子体处理装置，包括用于保持基板的台，处理容器，第一供应单元，掩模部分，电介质构件，微波引入单元和第二供应单元。 第一供应单元为处理空间提供用于层沉积的第一处理气体。 掩模部分是导电的并且具有面向处理空间的第一表面，相对侧的第二表面和从第一表面延伸到第二表面的一个或多个通孔。 电介质构件与掩模部分的第二表面接触，并且形成有连接到一个或多个通孔的一个或多个空腔。 微波引入单元向介电构件引入微波。 第二供应单元将等离子体处理的第二处理气体供应到电介质构件的空腔中。

公开(公告)号：US08419859B2

公开(公告)日：2013-04-16

申请号：US12528734

申请日：2008-02-18

申请人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

发明人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC分类号： B08B7/00

CPC分类号： C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

摘要： A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

摘要翻译： 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。

公开(公告)号：US20120118505A1

公开(公告)日：2012-05-17

申请号：US13379219

申请日：2010-05-20

申请人： Kiyotaka Ishibashi

发明人： Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/511

CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/32238

摘要： A coolant flow path for cooling a dielectric window of a side wall of a processing container of the plasma processing apparatus is provided. A coolant flows in a liquid or gaseous state in the coolant flow path without phase transition. At least a portion of the coolant flow path extending in a circumferential direction of the side wall has a cross-sectional area decreased toward downstream from upstream.

摘要翻译： 提供了用于冷却等离子体处理装置的处理容器的侧壁的电介质窗口的冷却剂流路。 冷却剂在冷却剂流动路径中以液态或气态流动而没有相变。 沿侧壁的圆周方向延伸的冷却剂流路的至少一部分具有朝向上游的下游减小的横截面面积。

公开(公告)号：US08069704B2

公开(公告)日：2011-12-06

申请号：US12419574

申请日：2009-04-07

申请人： Kiyotaka Ishibashi ,  Yoshiharu Kishida

发明人： Kiyotaka Ishibashi ,  Yoshiharu Kishida

IPC分类号： G01M3/02

CPC分类号： H01L21/67069 ,  C23C16/54

摘要： A gate valve corresponding to the sealing structure seals an opening of a plasma generation chamber and includes a valve body, a valve stem, and ring-shaped first and second sealing members that seal a gap between the valve body and the plasma generation chamber. The first ring-shaped sealing member is on the side of the plasma generation chamber and is exposed to a plasma atmosphere. The first and second ring-shaped sealing members do not contact each other, that is, a gap is formed therebetween. A plurality of gas grooves are arranged in the length direction of the first ring-shaped sealing member. The gas grooves are formed by cutting the valve body in a direction almost perpendicular to the length direction of the first ring-shaped sealing member, and the gap is in communication with the plasma generation chamber via the gas grooves. A gas injection passage 14 for injecting a gas into the gap is formed in the wall of the plasma generation chamber. A concave portion extending along the length direction of the first ring-shaped sealing member is formed on the surface of the plasma generation chamber, and the concave portion is connected to a gas outlet of the gas injection passage.

摘要翻译： 对应于密封结构的闸阀密封等离子体产生室的开口，并且包括阀体，阀杆和密封阀体和等离子体产生室之间的间隙的环形的第一和第二密封构件。 第一环形密封构件位于等离子体产生室的侧面并暴露于等离子体气氛中。 第一和第二环形密封构件彼此不接触，即在它们之间形成间隙。 在第一环形密封构件的长度方向上布置有多个气体槽。 通过沿着与第一环状密封构件的长度方向大致垂直的方向切断阀体而形成气体槽，该间隙经由气体槽与等离子体生成室连通。 在等离子体产生室的壁上形成用于将气体注入到间隙中的气体注入通道14。 在等离子体产生室的表面上形成有沿着第一环状密封部件的长度方向延伸的凹部，该凹部与气体喷出通路的气体出口连接。

公开(公告)号：US09237638B2

公开(公告)日：2016-01-12

申请号：US13391310

申请日：2010-08-16

申请人： Kiyotaka Ishibashi ,  Osamu Morita

发明人： Kiyotaka Ishibashi ,  Osamu Morita

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05H1/46 ,  C23C16/511 ,  H01J37/32

CPC分类号： H01J37/32192 ,  C23C16/455 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/3244 ,  H05H1/46 ,  H05H2001/463

摘要： A microwave supply unit 20 of a plasma processing apparatus 11 includes a stub member 51 configured to be extensible from the outer conductor 33 toward the inner conductor 32. The stub member 51 serves as a distance varying device for varying a distance in the radial direction between a part of the outer surface 36 of the inner conductor 32 and a facing member facing the part of the outer surface of the inner conductor 32 in the radial direction, i.e., the cooling plate protrusion 47. The stub member 51 includes a rod-shaped member 52 supported at the outer conductor 33 and configured to be extended in the radial direction; and a screw 53 as a moving distance adjusting member for adjusting a moving distance of the rod-shaped member 52 in the radial direction.

摘要翻译： 等离子体处理装置11的微波供给单元20包括构造成可从外导体33向内导体32延伸的短截线构件51.短截线构件51用作变距装置，用于改变径向方向上的距离 内导体32的外表面36的一部分和面向内径部分的内导体32的外表面的一部分的面对构件即冷却板突起47.短针构件51包括杆状 构件52支撑在外导体33处并且构造成沿径向方向延伸; 以及作为用于调节棒状构件52在径向上的移动距离的移动距离调节构件的螺钉53。

公开(公告)号：US09111726B2

公开(公告)日：2015-08-18

申请号：US13454513

申请日：2012-04-24

申请人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

发明人： Kazuki Moyama ,  Kiyotaka Ishibashi ,  Osamu Morita ,  Takehiro Tanikawa ,  Naoki Matsumoto ,  Naoki Mihara ,  Wataru Yoshikawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.

摘要翻译： 等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。 处理室在其中具有处理空间。 工作台设置在处理室内。 电介质构件具有通孔并且设置成面向台。 微波引入装置经由电介质构件将微波引入处理空间。 喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。 喷射器设置在电介质构件内。 介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。 电场屏蔽封闭注射器。

公开(公告)号：US20100288439A1

公开(公告)日：2010-11-18

申请号：US12675273

申请日：2008-08-21

申请人： Kiyotaka Ishibashi ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Masahiro Okesaku

发明人： Kiyotaka Ishibashi ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Masahiro Okesaku

IPC分类号： H01L21/465 ,  C23C16/50 ,  C23C16/511 ,  C23C16/455 ,  H01L21/46 ,  B26F1/00

CPC分类号： C23C16/45565 ,  C23C16/50 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T83/0481

摘要： A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits.

摘要翻译： 被构造为实心部分并且设置在内部可抽真空的等离子体处理室的顶部的开口中的公开的顶板包括在顶板的水平方向上形成的多个气体导管; 以及在顶板的第一表面中敞开的气体喷射孔，第一表面面对等离子体处理室的内部并与多个气体管道气体连通。