SYNCHRONIZATION OF RF GENERATORS
    32.
    发明公开

    公开(公告)号:US20230274913A1

    公开(公告)日:2023-08-31

    申请号:US18012212

    申请日:2021-09-24

    CPC classification number: H01J37/32146 H01J2237/334 H01J37/32091 H01J37/321

    Abstract: Systems and methods for synchronization of radio frequency (RF) generators are described. One of the methods includes receiving, by a first RF generator, a first recipe set, which includes information regarding a first plurality of pulse blocks for operating the first RF generator. The method further includes receiving, by a second RF generator, a second recipe set, which includes information regarding a second plurality of pulse blocks for operating a second RF generator. Upon receiving a digital pulsed signal, the method includes executing the first recipe set and executing the second recipe set. The method further includes outputting a first one of the pulse blocks of the first plurality based on the first recipe set in synchronization with a synchronization signal. The method includes outputting a first one of the pulse blocks of the second plurality based on the second recipe set in synchronization with the synchronization signal.

    SYNCHRONIZATION OF RF PULSING SCHEMES AND OF SENSOR DATA COLLECTION

    公开(公告)号:US20230230805A1

    公开(公告)日:2023-07-20

    申请号:US18009978

    申请日:2021-10-15

    CPC classification number: H01J37/32174 H01J37/32146

    Abstract: Systems and methods for synchronization of radio frequency (RF) pulsing schemes and of sensor data collection are described. One of the methods includes receiving, by an RF generator, a first set of one or more variable levels and one or more duty cycles of an RF signal. The method further includes receiving, by the RF generator from a pulse controller, a synchronization signal having a plurality of pulses. The method also includes generating, during a clock cycle of a clock signal, multiple instances of a first plurality of states of the RF signal in synchronization with the plurality of pulses of the synchronization signal. Each of the first plurality of states of the RF signal has a corresponding one of the one or more variable levels of the first set and a corresponding one of the one or more duty cycles of the first set.

    SYSTEMS AND METHODS FOR ACHIEVING PEAK ION ENERGY ENHANCEMENT WITH A LOW ANGULAR SPREAD

    公开(公告)号:US20230124201A1

    公开(公告)日:2023-04-20

    申请号:US18084684

    申请日:2022-12-20

    Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

    Frequency tuning for a matchless plasma source

    公开(公告)号:US11437219B2

    公开(公告)日:2022-09-06

    申请号:US16885083

    申请日:2020-05-27

    Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

    Methods and Systems for Advanced Ion Control for Etching Processes

    公开(公告)号:US20210193474A1

    公开(公告)日:2021-06-24

    申请号:US17196778

    申请日:2021-03-09

    Abstract: A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a first duration, a bias voltage is applied at the substrate holder at a first bias voltage setting corresponding to a high bias voltage level. For a second duration, after completion of the first duration, a bias voltage is applied at the substrate holder at a second bias voltage setting corresponding to a low bias voltage level. The second bias voltage setting is greater than 0 V. The first and second durations are repeated in an alternating and successive manner for an overall period of time necessary to remove a required amount of the target material exposed on the substrate.

    Monoenergetic ion generation for controlled etch

    公开(公告)号:US11011351B2

    公开(公告)日:2021-05-18

    申请号:US16035423

    申请日:2018-07-13

    Abstract: Systems and methods for generating monoenergetic ions are described. A duty cycle of a high parameter level of a multistate parameter signal is maintained and a difference between the high parameter level and a low parameter level of the multistate parameter signal is maintained to generate monoenergetic ions. The monoenergetic ions are used to etch a top material layer of a substrate at a rate that is self-limiting without substantially etching a bottom material layer of the substrate.

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