公开(公告)号：US07642193B2

公开(公告)日：2010-01-05

申请号：US11499680

申请日：2006-08-07

申请人： Peter L. G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

发明人： Peter L. G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

IPC分类号： H01L21/302

CPC分类号： H01L21/0273 ,  H01J37/32027 ,  H01J37/32082 ,  H01L21/0337

摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an oxygen-containing plasma or halogen-containing plasma or a noble gas plasma or a combination of two or more thereof prior to proceeding with the etching process.

摘要翻译： 描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。 使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。 为了减少图案定义的损失，例如线边缘粗糙度效应，在进行处理之前，用含氧等离子体或含卤素的等离子体或惰性气体等离子体或其两种或更多种的组合处理掩模层 蚀刻工艺。

公开(公告)号：US20080282979A1

公开(公告)日：2008-11-20

申请号：US11750539

申请日：2007-05-18

申请人： Lee Chen ,  Merritt Funk

发明人： Lee Chen ,  Merritt Funk

IPC分类号： C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

摘要： A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

摘要翻译： 描述了一种通过处理系统中的腔室部件引入过程流体的方法和系统。 腔室部件包括腔室元件，腔室元件具有在腔室元件的供给侧上的第一表面和腔室元件的过程侧上的第二表面，其中处理侧与供给侧相对。 此外，腔室部件包括从供应侧延伸穿过腔室元件到管道侧的管道，其中管道包括被配置为接收过程流体的入口和被配置为分配过程流体的出口。

公开(公告)号：US20080229418A1

公开(公告)日：2008-09-18

申请号：US11686119

申请日：2007-03-14

申请人： Lee Chen ,  John Chiong ,  Dennis I. Oshiba

发明人： Lee Chen ,  John Chiong ,  Dennis I. Oshiba

IPC分类号： G06F12/14

CPC分类号： H04L63/1416 ,  G06F21/552 ,  G06F2221/2151

摘要： Systems and methods adapted to customize a security log analyzer to recognize a security log, the system including at least one network security device for processing data traffic on a data network, the network security device associated with at least one computing device, and adapted to generate a security log, the system further including rule builder software adapted to generate a rule for recognizing at least one item in a security log and a log analyzer adapted to apply the rule in analyzing a security log.

摘要翻译： 适于定制安全日志分析器以识别安全日志的系统和方法，所述系统包括用于处理数据网络上的数据业务的至少一个网络安全设备，与至少一个计算设备相关联的网络安全设备，并适于生成 安全日志，所述系统还包括适于生成用于识别安全日志中的至少一个项目的规则的规则构建器软件以及适于在分析安全日志中应用所述规则的日志分析器。

公开(公告)号：US20080223873A1

公开(公告)日：2008-09-18

申请号：US11684853

申请日：2007-03-12

申请人： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

发明人： Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC分类号： C23F1/02

CPC分类号： H01J37/32642 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/0324 ,  Y10T428/215

摘要： A method and system for dynamically controlling a process chemistry above a substrate is described. The system for adjusting the process chemistry comprises a ring configured to surround a peripheral edge of a substrate in a vacuum processing system. The ring comprises one or more gas distribution passages formed within the ring and configured to supply an additive process gas through an upper surface of the ring to the peripheral region of the substrate, wherein the one or more gas distribution passages are configured to be coupled to one or more corresponding gas supply passages formed within the substrate holder upon which the ring rests.

摘要翻译： 描述了用于动态地控制衬底上方的工艺化学物质的方法和系统。 用于调整工艺化学的系统包括配置成在真空处理系统中围绕衬底的周边边缘的环。 所述环包括一个或多个气体分配通道，所述气体分配通道形成在所述环内并且构造成通过所述环的上表面将添加的处理气体供应到所述基底的周边区域，其中所述一个或多个气体分配通道被配置为与 一个或多个对应的气体供给通道，其形成在所述基座保持器内，所述环支撑在所述基座支架上。

公开(公告)号：US20080109887A1

公开(公告)日：2008-05-08

申请号：US11592473

申请日：2006-11-02

申请人： Lee Chen ,  John Chiong ,  Philip Kwan

发明人： Lee Chen ,  John Chiong ,  Philip Kwan

IPC分类号： G06F7/04

CPC分类号： H04L63/1416 ,  G06F21/6263 ,  G06F2221/2105 ,  G06F2221/2129 ,  G06F2221/2151 ,  H04L63/1433

摘要： A system and method for resolving an identity includes a security console, which displays security information regarding a secure network. The security information includes at least a first identity used to access the secure network. An operator selects the first identity, and the security console sends it to a resolver. The resolver connects with an identity server to find an access session record with an identity matching the first identity. A second identity is extracted from this record, and the resolver returns a result that includes the second identity. The security console displays the second identity; The first identity can be a user identity of a user, where the second identity is corresponding host identity, or vise versa. In this manner, an efficient interface to security information is provided to an operator, where the operator may resolve a user/host identity to a host/user identity interactively.

摘要翻译： 用于解决身份的系统和方法包括安全控制台，其显示关于安全网络的安全信息。 安全信息至少包括用于访问安全网络的第一身份。 操作员选择第一个身份，安全控制台将其发送到解析器。 解析器与身份服务器连接，以查找具有与第一身份匹配的身份的访问会话记录。 从该记录中提取第二个身份，解析器返回包含第二个身份的结果。 安全控制台显示第二个身份; 第一身份可以是用户的用户身份，其中第二身份是相应的主机身份，反之亦然。 以这种方式，向运营商提供对安全信息的有效接口，其中运营商可以交互地将用户/主机身份解析为主机/用户身份。

公开(公告)号：US20080038926A1

公开(公告)日：2008-02-14

申请号：US11499678

申请日：2006-08-07

申请人： Peter L.G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

发明人： Peter L.G. Ventzek ,  Lee Chen ,  Akira Koshiishi ,  Ikuo Sawada

IPC分类号： H05H1/24 ,  B05D5/00 ,  H01L21/461 ,  H01L21/302

CPC分类号： H05H1/44 ,  B05D1/32 ,  B05D1/62 ,  B05D3/145 ,  H01J37/32027 ,  H01J37/32036 ,  H01J37/32082 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802

摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with a hydrocarbon chemistry or hydrofluorocarbon chemistry or fluorocarbon chemistry or combination of two or more thereof prior to proceeding with the etching process.

公开(公告)号：US20080023440A1

公开(公告)日：2008-01-31

申请号：US11495726

申请日：2006-07-31

申请人： Lee Chen ,  Ping Jiang

发明人： Lee Chen ,  Ping Jiang

IPC分类号： C03C25/68 ,  C23F1/00

CPC分类号： H01J37/3233 ,  B05D3/145 ,  H01J37/32009

摘要： A method and system for treating a substrate using a ballistic electron beam is described, whereby the radial uniformity of the electron beam flux is adjusted by modulating the source radio frequency (RF) power. For example, a plasma processing system is described having a first RF power coupled to a lower electrode, which may support the substrate, a second RF power coupled to an upper electrode that opposes the lower electrode, and a negative high voltage direct current (DC) power coupled to the upper electrode to form the ballistic electron beam. The amplitude of the second RF power is modulated to affect changes in the uniformity of the ballistic electron beam flux.

摘要翻译： 描述了使用弹道电子束处理衬底的方法和系统，由此通过调制源射频（RF）功率来调节电子束通量的径向均匀性。 例如，描述了等离子体处理系统，其具有耦合到可以支撑衬底的下电极的第一RF功率，耦合到与下电极相对的上电极的第二RF功率和负的高电压直流（DC ）功率耦合到上电极以形成弹道电子束。 调制第二RF功率的幅度以影响弹道电子束通量的均匀性的变化。

公开(公告)号：US20060065938A1

公开(公告)日：2006-03-30

申请号：US10954104

申请日：2004-09-30

申请人： Akiteru Ko ,  Annie Xia ,  Lee Chen

发明人： Akiteru Ko ,  Annie Xia ,  Lee Chen

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L21/0234 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31645 ,  H01L29/517

摘要： A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

摘要翻译： 用于等离子体处理高k层的方法包括在处理室中的衬底保持器上提供其上形成有高k层的衬底，并在处理室中产生等离子体，从而将高k层暴露于 等离子体。 RF功率施加到衬底保持器，RF功率具有降低位于衬底和高k层之间的氧化物界面层的形成速率的特性。 一种器件包括蚀刻在高k层中的特征。 器件的蚀刻轮廓可以包括缩小的鸟嘴，并且蚀刻区域中的衬底的表面可以在非蚀刻区域下与衬底基本上共面。

公开(公告)号：US20060065621A1

公开(公告)日：2006-03-30

申请号：US10953791

申请日：2004-09-30

申请人： Lee Chen ,  Caiz Tian ,  Naoki Matsumoto

发明人： Lee Chen ,  Caiz Tian ,  Naoki Matsumoto

IPC分类号： B31D3/00 ,  C23F1/00

CPC分类号： H01J37/32522 ,  H01J37/32192 ,  H01J37/3222

摘要： A surface wave plasma (SWP) source having an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the EM wave launcher, and configured to provide the EM energy to the EM wave launcher for forming the plasma. A mode scrambler coupled to the plasma surface of the EM wave launcher, and configured to reduce mode jumping between the desired EM wave mode and another EM wave mode.

公开(公告)号：US20050211670A1

公开(公告)日：2005-09-29

申请号：US10501987

申请日：2003-01-28

申请人： Lee Chen

发明人： Lee Chen

IPC分类号： C23F1/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/3213

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01L21/32136

摘要： An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX) and carbonyl etching gases. The Ti in the Ti—Ni alloy is etched via an ion-assisted reaction with HX and the Ni is etched by reacting with CO. The method is particularly well suited for anisotropic etching of Ti—Ni metal gates for CMOS applications. Etching of Ni—Fe layers is carried out by exposure to plasma comprising a carbonyl etching gas.

摘要翻译： 描述了使用气相等离子体蚀刻来蚀刻含Ni膜的装置和方法。 通过暴露于包含卤化氢（HX）和羰基蚀刻气体的等离子体进行Ti-Ni合金的蚀刻。 通过与HX的离子辅助反应对Ti-Ni合金中的Ti进行蚀刻，并通过与CO反应蚀刻Ni，该方法特别适用于CMOS应用的Ti-Ni金属栅极的各向异性蚀刻。 通过暴露于包含羰基蚀刻气体的等离子体来进行Ni-Fe层的蚀刻。