公开(公告)号：US08999059B2

公开(公告)日：2015-04-07

申请号：US12234786

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/12 ,  C30B35/00 ,  C30B9/00 ,  C30B29/40

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1096

摘要： A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

摘要翻译： 使用具有多个用于容纳溶液的坩埚的生长装置，用于加热坩埚的加热元件和用于至少容纳坩埚和加热元件并用于填充至少包含氮气的气氛的压力容器。 在每个坩埚中放置一个籽晶以在籽晶上生长氮化物单晶。

公开(公告)号：US08507364B2

公开(公告)日：2013-08-13

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

公开(公告)号：US08486190B2

公开(公告)日：2013-07-16

申请号：US12234799

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/04

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B29/406

摘要： A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.

摘要翻译： 称量含有容易氧化的材料的原料混合物。 将原料混合物熔化，然后在设置在非氧化性气氛中的反应容器1内固化，从而产生固化物19.反应容器1和固化物19在晶体生长中的非氧化性气氛中加热 熔化固化物从而产生溶液的装置。 从溶液中生长单晶。

公开(公告)号：US08361222B2

公开(公告)日：2013-01-29

申请号：US12081943

申请日：2008-04-23

申请人： Shiro Yamazaki ,  Seiji Nagai ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Seiji Nagai ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B15/14 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/12 ,  C30B29/406

摘要： In the production of GaN through the flux method, deposition of miscellaneous crystals on the nitrogen-face of a GaN self-standing substrate and waste of raw materials are prevented. Four arrangements of crucibles and a GaN self-standing substrate are exemplified. In FIG. 1A, a nitrogen-face of a self-standing substrate comes into close contact with a sloped flat inner wall of a crucible. In FIG. 1B, a nitrogen-face of a self-standing substrate comes into close contact with a horizontally facing flat inner wall of a crucible, and the substrate is fixed by means of a jig. In FIG. 1C, a jig is provided on a flat bottom of a crucible, and two GaN self-standing substrates are fixed by means of the jig so that the nitrogen-faces of the substrates come into close contact with each other. In FIG. 1D, a jig is provided on a flat bottom of a crucible, and a GaN self-standing substrate is fixed on the jig so that the nitrogen-face of the substrate is covered with the jig. A flux mixture of molten gallium and sodium is charged into each crucible, and a GaN single crystal is grown on a gallium-face under pressurized nitrogen.

摘要翻译： 在通过助熔剂制造GaN的情况下，可以防止在GaN自立基板的氮面上沉积杂晶，原料的浪费。 例示了四个坩埚和GaN自立衬底的布置。 在图 如图1A所示，自立基板的氮面与坩埚的倾斜的平坦的内壁紧密接触。 在图 如图1B所示，自立基板的氮面与坩埚的水平方向的平坦的内壁紧密接触，通过夹具固定基板。 在图 如图1C所示，在坩埚的平坦底部设置夹具，通过夹具固定两个GaN自立基板，使得基板的氮面彼此紧密接触。 在图 如图1D所示，在坩埚的平坦底部设置夹具，并且将GaN自立基板固定在夹具上，使得基板的氮面被夹具覆盖。 将熔融的镓和钠的助熔剂混合物装入每个坩埚中，并且在加压氮气下在镓面上生长GaN单晶。

公开(公告)号：US20120111264A1

公开(公告)日：2012-05-10

申请号：US13344809

申请日：2012-01-06

申请人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai

发明人： Takanao Shimodaira ,  Katsuhiro Imai ,  Makoto Iwai

IPC分类号： C30B9/04

CPC分类号： H01L21/02639 ,  C30B9/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0265

摘要： A plurality of seed crystal films of a single crystal of a nitride of a metal belonging to group III are formed on a substrate, while a non-growth surface not covered with the seed crystal films is formed on the substrate. A single crystal of a nitride of a metal belonging to group III is grown on the seed crystal film. A plurality of the seed crystal films are separated by the non-growth surface and arranged in at least two directions X and Y. The maximum inscribed circle diameter “A” of the seed crystal film is 50 μm or more and 6 mm or less, a circumscribed circle diameter “B” of the seed crystal film is 50 μm or more and 10 mm or less, and the maximum inscribed circle diameter “C” of the non-growth surface 1b is 100 μm or more and 1 mm or less.

摘要翻译： 属于III族的金属的氮化物的单晶的多个晶种膜形成在基板上，而在衬底上形成未被晶种膜覆盖的非生长表面。 属于III族的金属的氮化物的单晶生长在籽晶膜上。 多个晶种膜由非生长面分离，并且沿至少两个方向X和Y排列。晶种膜的最大内接圆直径“A”为50μm以上且6mm以下， 晶种膜的外接圆直径“B”为50μm以上且10mm以下，非生长面1b的最大内切圆直径“C”为100μm以上且1mm以下。

公开(公告)号：US07815733B2

公开(公告)日：2010-10-19

申请号：US11837557

申请日：2007-08-13

申请人： Makoto Iwai ,  Katsuhiro Imai ,  Takatomo Sasaki ,  Fumio Kawamura ,  Minoru Kawahara ,  Hiroaki Isobe

发明人： Makoto Iwai ,  Katsuhiro Imai ,  Takatomo Sasaki ,  Fumio Kawamura ,  Minoru Kawahara ,  Hiroaki Isobe

IPC分类号： C30B11/00 ,  C30B28/12

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/12

摘要： A method of growing hexagonal boron nitride single crystal is provided. Hexagonal boron nitride single crystal is grown in calcium nitride flux by heating, or heating and then slowly cooling, boron nitride and a calcium series material in an atmosphere containing nitrogen. Bulk hexagonal boron nitride single crystal can thereby successfully be grown.

摘要翻译： 提供了生长六方氮化硼单晶的方法。 六方氮化硼单晶通过在含氮气氛中加热或加热然后缓慢冷却氮化硼和钙系列材料而在氮化钙焊剂中生长。 从而可以成功地生长大块六方氮化硼单晶。

公开(公告)号：US20100012020A1

公开(公告)日：2010-01-21

申请号：US12556015

申请日：2009-09-09

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  C30B19/062 ,  C30B19/08 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02625

摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

摘要翻译： 氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。 在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

公开(公告)号：US20090155580A1

公开(公告)日：2009-06-18

申请号：US12225389

申请日：2007-04-05

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/02 ,  B32B9/00 ,  B32B1/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  H01L33/0075 ,  Y10T428/265 ,  Y10T428/266

摘要： To provide a semiconductor substrate of high quality suitable for fabricating an electronic device or an optical device. The present invention provides a method for producing a semiconductor substrate for an electronic device or an optical device, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal or after completion of growth of the semiconductor crystal.

摘要翻译： 提供适合于制造电子器件或光学器件的高品质的半导体衬底。 本发明提供了一种用于制造电子器件或光学器件的半导体衬底的方法，所述方法包括使氮（N）与镓（Ga），铝（Al）或铟（In）反应，其为III族元素 在含有选自碱金属和碱土金属中的多种金属元素的助熔剂混合物中，从而生长III族氮化物类化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 III族氮化物基化合物半导体晶体，在半导体晶体生长过程中或半导体晶体生长完成之后。

公开(公告)号：US20090038539A1

公开(公告)日：2009-02-12

申请号：US12234799

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B29/406

摘要： A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.

摘要翻译： 称量含有容易氧化的材料的原料混合物。 将原料混合物熔化，然后在设置在非氧化性气氛中的反应容器1内固化，从而产生固化物19.反应容器1和固化物19在晶体生长中的非氧化性气氛中加热 熔化固化物从而产生溶液的装置。 从溶液中生长单晶。

公开(公告)号：US20080223288A1

公开(公告)日：2008-09-18

申请号：US12073904

申请日：2008-03-11

申请人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/12

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

摘要翻译： 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。