公开(公告)号：US20100012020A1

公开(公告)日：2010-01-21

申请号：US12556015

申请日：2009-09-09

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  C30B19/062 ,  C30B19/08 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02625

摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

摘要翻译： 氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。 在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

公开(公告)号：US08506705B2

公开(公告)日：2013-08-13

申请号：US12556015

申请日：2009-09-09

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Yasuo Kitaoka

IPC分类号： C30B9/00

CPC分类号： C30B29/406 ,  C30B19/02 ,  C30B19/062 ,  C30B19/08 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02625

摘要： A nitride single crystal is produced on a seed crystal substrate 5 in a melt containing a flux and a raw material of the single crystal in a growing vessel 1. The melt 2 in the growing vessel 1 has temperature gradient in a horizontal direction. In growing a nitride single crystal by flux method, adhesion of inferior crystals onto the single crystal is prevented and the film thickness of the single crystal is made constant.

摘要翻译： 氮化物单晶在生长容器1中含有熔剂和单晶原料的熔融物中在籽晶衬底5上产生。生长容器1中的熔体2在水平方向上具有温度梯度。 在通过助熔剂法生长氮化物单晶时，防止了将劣质晶体粘附到单晶上，使单晶的膜厚保持恒定。

公开(公告)号：US08025728B2

公开(公告)日：2011-09-27

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B29/38

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal is immersed in a melt containing a flux and a single crystal material in a growth vessel to produce a nitride single crystal on the seed crystal. A difference (TS-TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 在生长容器中将晶种浸入含有助熔剂和单晶材料的熔体中，以在籽晶上产生氮化物单晶。 在熔体（TS）和熔体（TB）的最下部分的气 - 液界面处的温度差（TS-TB）设定为1℃或更大和8℃或更低。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US20090095212A1

公开(公告)日：2009-04-16

申请号：US12284470

申请日：2008-09-22

申请人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Mikiya Ichimura ,  Katsuhiro Imai ,  Chikashi Ihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B7/00

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： A seed crystal 9 is immersed in a melt 10 containing a flux and a single crystal material in a growth vessel 7 to produce a nitride single crystal 8 on the seed crystal 9. A difference (TS−TB) of temperatures at a gas-liquid interface of the melt (TS) and at the lowermost part of the melt (TB) is set to 1° C. or larger and 8° C. or lower. Preferably, the substrate of seed crystal is vertically placed.

摘要翻译： 将晶种9浸入生长容器7中含有助熔剂和单晶材料的熔体10中，以在晶种9上产生氮化物单晶8.气液中的温度差（TS-TB） 熔体（TS）和熔体（TB）的最下部的界面设定为1℃以上8℃以下。 优选地，将晶种的衬底垂直放置。

公开(公告)号：US20100301358A1

公开(公告)日：2010-12-02

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L29/20 ,  C30B9/12 ,  H01L29/772 ,  H01L33/30 ,  H01L31/0304 ,  H01L21/20

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07459023B2

公开(公告)日：2008-12-02

申请号：US11590930

申请日：2006-11-01

申请人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

发明人： Shiro Yamazaki ,  Koji Hirata ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Yuji Yamada

IPC分类号： C30B25/12

CPC分类号： C30B25/00 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.

摘要翻译： 本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。 待生长半导体晶体的基板的至少一部分由助熔剂材料形成。 半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。 或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。 助熔剂材料由硅形成。 或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

公开(公告)号：US08084281B2

公开(公告)日：2011-12-27

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US20080223286A1

公开(公告)日：2008-09-18

申请号：US12073178

申请日：2008-02-29

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B23/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

公开(公告)号：US08999059B2

公开(公告)日：2015-04-07

申请号：US12234786

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/12 ,  C30B35/00 ,  C30B9/00 ,  C30B29/40

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1096

摘要： A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.

摘要翻译： 使用具有多个用于容纳溶液的坩埚的生长装置，用于加热坩埚的加热元件和用于至少容纳坩埚和加热元件并用于填充至少包含氮气的气氛的压力容器。 在每个坩埚中放置一个籽晶以在籽晶上生长氮化物单晶。

公开(公告)号：US08486190B2

公开(公告)日：2013-07-16

申请号：US12234799

申请日：2008-09-22

申请人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B9/04

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B29/406

摘要： A raw material mixture containing an easily oxidizable material is weighed. The raw material mixture is melted and then solidified within a reaction vessel 1 set in a non-oxidizing atmosphere to thereby produce a solidified matter 19. The reaction vessel 1 and the solidified matter 19 are heated in a non-oxidizing atmosphere within a crystal growth apparatus to melt the solidified matter to thereby produce a solution. A single crystal is grown from the solution.

摘要翻译： 称量含有容易氧化的材料的原料混合物。 将原料混合物熔化，然后在设置在非氧化性气氛中的反应容器1内固化，从而产生固化物19.反应容器1和固化物19在晶体生长中的非氧化性气氛中加热 熔化固化物从而产生溶液的装置。 从溶液中生长单晶。