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    Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers
    33.
    发明授权
    Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers 有权
    用于改善晶间接触部位并填充半导体金属氧化物颗粒层间隙的热不稳定前体化合物

    公开(公告)号：US09129801B2

    公开(公告)日：2015-09-08

    申请号：US13378765

    申请日：2010-06-15

    申请人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/02 ,  H01L29/10 ,  H01L29/12

    CPC分类号： H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) applying a porous layer of at least one semiconductive metal oxide to a substrate, (B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and (C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B） 用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理 步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自 由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物 氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。

    Polyimides as dielectric
    35.
    发明授权
    Polyimides as dielectric 有权
    聚酰亚胺作为电介质

    公开(公告)号：US09187600B2

    公开(公告)日：2015-11-17

    申请号：US13286639

    申请日：2011-11-01

    申请人： Hans Jürg Kirner ,  Marcel Kastler ,  Emmanuel Martin

    发明人： Hans Jürg Kirner ,  Marcel Kastler ,  Emmanuel Martin

    IPC分类号： H01G4/18 ,  C08G73/10 ,  H01L51/00 ,  C09D179/08 ,  H01L51/50

    CPC分类号： C08G73/101 ,  C08G73/1025 ,  C08G2261/92 ,  C09D179/08 ,  H01L51/006 ,  H01L51/5012

    摘要： The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocurable polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of >=360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process.

    摘要翻译： 本发明提供了一种在衬底上制备晶体管的方法，该晶体管包括一层，该层包括聚酰亚胺B，该层包括以下步骤：i）通过将光固化性聚酰亚胺A涂覆在 晶体管或衬底上的层; ii）为了形成包含聚酰亚胺B的层，以及可通过该方法获得的晶体管，将波长> = 360nm的光照射到包含可光固化聚酰亚胺A的层上。

    PROCESS FOR THE PRODUCTION OF POLYMERS BY USING COUPLING REACTIONS
    37.
    发明申请
    PROCESS FOR THE PRODUCTION OF POLYMERS BY USING COUPLING REACTIONS 有权
    使用联合反应生产聚合物的方法

    公开(公告)号：US20140080994A1

    公开(公告)日：2014-03-20

    申请号：US14122873

    申请日：2012-05-29

    申请人： Matthias Kleiner ,  Martin Elbs ,  Marcel Kastler

    发明人： Matthias Kleiner ,  Martin Elbs ,  Marcel Kastler

    IPC分类号： C08G75/06

    CPC分类号： C08G75/06 ,  B01J19/082 ,  B01J19/123 ,  B01J19/1818 ,  B01J19/1831 ,  B01J19/1856 ,  B01J19/1862 ,  B01J19/242 ,  B01J19/243 ,  B01J19/2445 ,  B01J19/245 ,  B01J19/285 ,  B01J2219/00202 ,  C08G61/124 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/3223 ,  C08G2261/344 ,  C08G2261/411

    摘要： The present invention relates to a continuous process for the production of polymeric coupling products by using a reactor assembly which is equipped with two or more reaction cells. The educt fluid is pumped through the reaction cells and thoroughly mixed therein by means of agitators. Preferably the process according to the invention is used for the preparation of coupling products which show at least partially precipitation and/or gelation effects during the performance of the synthesis. The precipitation and/or gelation effects are associated with and increase of the viscosity of the reaction system under reaction conditions. The products which are obtained by the process according to the invention have increased molecular weight and low polydispersity over similar products which were obtained in batch experiments.

    摘要翻译： 本发明涉及通过使用装备有两个或更多个反应池的反应器组件来生产聚合物偶联产物的连续方法。 将喷射流体泵送通过反应池并通过搅拌器充分混合。 优选地，根据本发明的方法用于制备在合成过程中显示至少部分沉淀和/或凝胶化作用的偶联产物。 在反应条件下，沉淀和/或凝胶化作用与反应体系的粘度相关并增加。 通过本发明方法获得的产物与分批实验中获得的相似产品相比，分子量增加和分散性降低。

    THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS
    39.
    发明申请
    THERMALLY LABILE PRECURSOR COMPOUNDS FOR IMPROVING THE INTERPARTICULATE CONTACT SITES AND FOR FILLING THE INTERSTICES IN SEMICONDUCTIVE METAL OXIDE PARTICLE LAYERS 有权
    用于改进间断接触点和用于填充半导体金属氧化物颗粒层中的相互作用的热可塑前体化合物

    公开(公告)号：US20120086002A1

    公开(公告)日：2012-04-12

    申请号：US13378765

    申请日：2010-06-15

    申请人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    发明人： Friederike Fleischhaker ,  Imme Domke ,  Andrey Karpov ,  Marcel Kastler ,  Veronika Wloka ,  Lothar Weber

    IPC分类号： H01L29/22 ,  H01L21/20

    CPC分类号： H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628

    摘要： The present invention relates to a process for producing a layer comprising at least one semiconductive metal oxide on a substrate, comprising at least the steps of:(A) applying a porous layer of at least one semiconductive metal oxide to a substrate,(B) treating the porous layer from step (A) with a solution comprising at least one precursor compound of the semiconductive metal oxide, such that the pores of the porous layer are at least partly filled with this solution and(C) thermally treating the layer obtained in step (B) in order to convert the at least one precursor compound of the semiconductive metal oxide to the semiconductive metal oxide,wherein the at least one precursor compound of the at least one semiconductive metal oxide in step (B) is selected from the group consisting of carboxylates of mono-, di- or polycarboxylic acids having at least three carbon atoms or derivatives of mono-, di- or polycarboxylic acids, alkoxides, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrites or azides of the corresponding metal, and mixtures thereof.

    摘要翻译： 本发明涉及一种在基材上制备包含至少一种半导体金属氧化物的层的方法，至少包括以下步骤：（A）将至少一种半导体金属氧化物的多孔层施加到基材上，（B） 用包含半导体金属氧化物的至少一种前体化合物的溶液处理来自步骤（A）的多孔层，使得多孔层的孔至少部分地被该溶液填充，和（C）热处理 步骤（B），以将半导体金属氧化物的至少一种前体化合物转化为半导体金属氧化物，其中步骤（B）中的至少一种半导体金属氧化物的至少一种前体化合物选自 由具有至少三个碳原子的单，二或多元羧酸的羧酸盐或单羧酸，二羧酸或多元羧酸，醇盐，氢氧化物，氨基脲，氨基甲酸盐，水合物 氨基甲酸酯，异氰酸酯，脒，氨基腙，脲衍生物，羟胺，肟，肟酸酯，氨基甲酸酯，氨，胺，膦，铵化合物，硝酸酯，亚硝酸酯或相应金属的叠氮化物及其混合物。